公开(公告)号：US20060067634A1

公开(公告)日：2006-03-30

申请号：US10951610

申请日：2004-09-29

申请人： Jeffrey Bull ,  Hiroshi Kato ,  Nicolas Jaeger ,  Pinghe Lu

发明人： Jeffrey Bull ,  Hiroshi Kato ,  Nicolas Jaeger ,  Pinghe Lu

IPC分类号： G02B6/10 ,  G02F1/035 ,  G02B6/26 ,  G02B6/42

CPC分类号： G02F1/0136 ,  G02B6/14 ,  G02F1/035 ,  G02F2202/10

摘要： An optical mode converter comprising a slow wave electrode structure and including Schottky barriers for preventing an accumulation of free carriers in the optical waveguide region of the converter. The Schottky barriers are also used for suppressing higher order modes in the waveguide. Low refractive index insulators are used to allow efficient driving of the device without hindering the impedance or the microwave index of the optical mode converter. Two-photon absorption processes are eliminated through the use of a waveguide semiconductor material having a bandgap of at least twice the photon energy of the light beam propagating through the optical mode converter.

摘要翻译： 一种光模式转换器，包括慢波电极结构并且包括用于防止转换器的光波导区域中的自由载流子积聚的肖特基势垒。 肖特基势垒也用于抑制波导中的高阶模式。 使用低折射率绝缘体来允许器件的有效驱动，而不会阻碍光学模式转换器的阻抗或微波指数。 通过使用波导半导体材料来消除双光子吸收过程，所述波导半导体材料具有通过光学模式转换器传播的光束的光子能量的至少两倍的带隙。

公开(公告)号：US07242821B2

公开(公告)日：2007-07-10

申请号：US10951610

申请日：2004-09-29

申请人： Jeffrey D. Bull ,  Hiroshi Kato ,  Nicolas August Fleming Jaeger ,  Pinghe Lu

发明人： Jeffrey D. Bull ,  Hiroshi Kato ,  Nicolas August Fleming Jaeger ,  Pinghe Lu

IPC分类号： G02B6/10 ,  G02B1/35

CPC分类号： G02F1/0136 ,  G02B6/14 ,  G02F1/035 ,  G02F2202/10

摘要： An optical mode converter comprising a slow wave electrode structure and including Schottky barriers for preventing an accumulation of free carriers in the optical waveguide region of the converter. The Schottky barriers are also used for suppressing higher order modes in the waveguide. Low refractive index insulators are used to allow efficient driving of the device without hindering the impedance or the microwave index of the optical mode converter. Two-photon absorption processes are eliminated through the use of a waveguide semiconductor material having a bandgap of at least twice the photon energy of the light beam propagating through the optical mode converter.

摘要翻译： 一种光模式转换器，包括慢波电极结构并且包括用于防止转换器的光波导区域中的自由载流子积聚的肖特基势垒。 肖特基势垒也用于抑制波导中的高阶模式。 使用低折射率绝缘体来允许器件的有效驱动，而不会阻碍光学模式转换器的阻抗或微波指数。 通过使用波导半导体材料来消除双光子吸收过程，所述波导半导体材料具有通过光学模式转换器传播的光束的光子能量的至少两倍的带隙。

公开(公告)号：US08476101B2

公开(公告)日：2013-07-02

申请号：US12654646

申请日：2009-12-28

申请人： Henry Chen ,  Pramodha Marthandam ,  Salah Awadalla ,  Pinghe Lu

发明人： Henry Chen ,  Pramodha Marthandam ,  Salah Awadalla ,  Pinghe Lu

IPC分类号： H01L21/00

CPC分类号： H01L31/1804 ,  H01L31/02966 ,  H01L31/085 ,  Y02E10/547

摘要： A method of making a semiconductor radiation detector includes the steps of providing a semiconductor substrate having front and rear major opposing surfaces, forming a solder mask layer over the rear major surface, patterning the solder mask layer into a plurality of pixel separation regions, and after the step of patterning the solder mask layer, forming anode pixels over the rear major surface. Each anode pixel is formed between adjacent pixel-separation regions and a cathode electrode is located over the front major surface of the substrate. The solder mask can be used as a permanent photoresist in developing patterned electrodes on CdZnTe/CdTe devices as well as a permanent reliability protection coating. The method is very robust and ensures long-term reliability, outstanding detector performance, and may be used in applications such as medical imaging and for demanding other highly spectroscopic applications.

摘要翻译： 制造半导体辐射检测器的方法包括以下步骤：提供具有前和后主要相对表面的半导体衬底，在后主表面上形成焊接掩模层，将焊接掩模层图案化成多个像素分离区域，之后 图案化焊料掩模层的步骤，在后主表面上形成阳极像素。 每个阳极像素形成在相邻像素分离区域之间，阴极电极位于衬底的前主表面上方。 焊接掩模可以用作CdZnTe / CdTe器件上的图案化电极中的永久性光刻胶，以及永久可靠性保护涂层。 该方法非常强大，确保了长期的可靠性，出色的检测器性能，可用于医疗成像和苛刻的其他高光谱应用。

公开(公告)号：US07589324B2

公开(公告)日：2009-09-15

申请号：US11642819

申请日：2006-12-21

申请人： Henry Chen ,  Glenn Bindley ,  Pinghe Lu

发明人： Henry Chen ,  Glenn Bindley ,  Pinghe Lu

IPC分类号： G01T1/24

CPC分类号： G01T1/2928 ,  G01T1/241

摘要： A radiation detector is described having a semiconductor substrate with opposing front and rear surfaces, a cathode electrode located on the front surface of said semiconductor substrate, a plurality of anode electrodes located on the rear surface of said semiconductor substrate and a solder mask disposed above the anode electrodes. The solder mask has openings extending to the anode electrodes for placing solder in said openings.

摘要翻译： 描述了一种辐射检测器，其具有具有相对的前后表面的半导体衬底，位于所述半导体衬底的前表面上的阴极电极，位于所述半导体衬底的后表面上的多个阳极电极和设置在所述半导体衬底的上表面上的焊接掩模 阳极电极。 焊接掩模具有延伸到阳极电极的开口，用于将焊料放置在所述开口中。

公开(公告)号：US07462833B2

公开(公告)日：2008-12-09

申请号：US11785319

申请日：2007-04-17

申请人： Henry Chen ,  Pinghe Lu ,  Ray Brougham ,  Salah Awadalla ,  Andrew MacDonald ,  Glenn Bindley

发明人： Henry Chen ,  Pinghe Lu ,  Ray Brougham ,  Salah Awadalla ,  Andrew MacDonald ,  Glenn Bindley

IPC分类号： G01T1/24

CPC分类号： H01L31/02966 ,  G01T1/244 ,  H01L27/1446 ,  H01L31/0203 ,  H01L31/085 ,  H01L31/1832

摘要： A radiation detector includes a semiconductor substrate with opposing front and rear surfaces, where a cathode electrode is located on the front surface, a plurality of anode electrodes located on the rear surface, and an electrically conductive housing is placed in electrical contact with the cathode electrode.

摘要翻译： 辐射检测器包括具有相对的前表面和后表面的半导体衬底，其中阴极位于前表面上，多个阳极电极位于后表面上，并且导电外壳被放置成与阴极电接触 。

公开(公告)号：US20080149844A1

公开(公告)日：2008-06-26

申请号：US11642819

申请日：2006-12-21

申请人： Henry Chen ,  Glenn Bindley ,  Pinghe Lu

发明人： Henry Chen ,  Glenn Bindley ,  Pinghe Lu

IPC分类号： G01T1/24

CPC分类号： G01T1/2928 ,  G01T1/241

摘要： A radiation detector is described having a semiconductor substrate with opposing front and rear surfaces, a cathode electrode located on the front surface of said semiconductor substrate, a plurality of anode electrodes located on the rear surface of said semiconductor substrate and a solder mask disposed above the anode electrodes. The solder mask has openings extending to the anode electrodes for placing solder in said openings.

摘要翻译： 描述了一种辐射检测器，其具有具有相对的前后表面的半导体衬底，位于所述半导体衬底的前表面上的阴极电极，位于所述半导体衬底的后表面上的多个阳极电极和设置在所述半导体衬底的上表面上的焊接掩模 阳极电极。 焊接掩模具有延伸到阳极电极的开口，用于将焊料放置在所述开口中。

公开(公告)号：US08614423B2

公开(公告)日：2013-12-24

申请号：US12364042

申请日：2009-02-02

申请人： Henry Chen ,  Salah Awadalla ,  Pinghe Lu ,  Pramodha Marthandam

发明人： Henry Chen ,  Salah Awadalla ,  Pinghe Lu ,  Pramodha Marthandam

IPC分类号： G01T1/24 ,  H01L27/146

CPC分类号： H01L31/085 ,  H01L27/14618 ,  H01L27/14658 ,  H01L31/0224 ,  H01L31/1832 ,  H01L2924/0002 ,  H01L2924/00

摘要： A radiation detector includes a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of the semiconductor substrate configured so as to receive radiation, and a plurality of anode electrodes formed on the rear surface of said semiconductor substrate. A work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate.

摘要翻译： 辐射检测器包括具有相对的前表面和后表面的半导体衬底，位于半导体衬底的前表面上以便接收辐射的阴极，以及形成在所述半导体衬底的后表面上的多个阳极。 与半导体基板的前表面接触的阴极电极的功函数低于与半导体基板的背面接触的阳极电极材料的功函数。

公开(公告)号：US08071953B2

公开(公告)日：2011-12-06

申请号：US12111413

申请日：2008-04-29

申请人： Pinghe Lu ,  Henry Chen ,  Glenn Bindley

发明人： Pinghe Lu ,  Henry Chen ,  Glenn Bindley

IPC分类号： H01L27/146

CPC分类号： H01L31/115 ,  G01T1/00 ,  G01T1/24 ,  H01L27/14661 ,  H01L27/1469 ,  H05K3/323 ,  Y10S977/762 ,  Y10T156/10

摘要： A device includes (a) radiation detector including a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of said semiconductor substrate, and a plurality of anode electrodes on the rear surface of said semiconductor substrate, (b) a printed circuit board, and (c) an electrically conductive polymeric film disposed between circuit board and the anode electrodes. The polymeric film contains electrically conductive wires. The film bonds and electrically connects the printed circuit board and anode electrodes.

摘要翻译： （a）包括具有相对的前表面和后表面的半导体衬底的放射线检测器，位于所述半导体衬底的前表面上的阴极电极和在所述半导体衬底的后表面上的多个阳极电极，（b） 印刷电路板，以及（c）设置在电路板和阳极之间的导电聚合物膜。 聚合物膜包含导电线。 膜结合并电连接印刷电路板和阳极电极。

公开(公告)号：US20110156198A1

公开(公告)日：2011-06-30

申请号：US12654646

申请日：2009-12-28

申请人： Henry Chen ,  Pramodha Marthandam ,  Salah Awadalla ,  Pinghe Lu

发明人： Henry Chen ,  Pramodha Marthandam ,  Salah Awadalla ,  Pinghe Lu

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/02966 ,  H01L31/085 ,  Y02E10/547

摘要： A method of making a semiconductor radiation detector includes the steps of providing a semiconductor substrate having front and rear major opposing surfaces, forming a solder mask layer over the rear major surface, patterning the solder mask layer into a plurality of pixel separation regions, and after the step of patterning the solder mask layer, forming anode pixels over the rear major surface. Each anode pixel is formed between adjacent pixel-separation regions and a cathode electrode is located over the front major surface of the substrate. The solder mask can be used as a permanent photoresist in developing patterned electrodes on CdZnTe/CdTe devices as well as a permanent reliability protection coating. The method is very robust and ensures long-term reliability, outstanding detector performance, and may be used in applications such as medical imaging and for demanding other highly spectroscopic applications.

摘要翻译： 制造半导体辐射检测器的方法包括以下步骤：提供具有前和后主要相对表面的半导体衬底，在后主表面上形成焊接掩模层，将焊接掩模层图案化成多个像素分离区域，之后 图案化焊料掩模层的步骤，在后主表面上形成阳极像素。 每个阳极像素形成在相邻像素分离区域之间，阴极电极位于衬底的前主表面上方。 焊接掩模可以用作CdZnTe / CdTe器件上的图案化电极中的永久性光刻胶，以及永久可靠性保护涂层。 该方法非常强大，确保了长期的可靠性，出色的检测器性能，可用于医疗成像和苛刻的其他高光谱应用。

公开(公告)号：US07955992B2

公开(公告)日：2011-06-07

申请号：US12188501

申请日：2008-08-08

申请人： Henry Chen ,  Pinghe Lu ,  Salah Awadalla

发明人： Henry Chen ,  Pinghe Lu ,  Salah Awadalla

IPC分类号： H01L21/00

CPC分类号： G01T1/24 ,  H01L27/14683 ,  H01L31/085 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S438/958

摘要： A method of forming a passivation layer comprises contacting at least one surface of a wide band-gap semiconductor material with a passivating agent comprising an alkali hypochloride to form the passivation layer on said at least one surface. The passivation layer may be encapsulated with a layer of encapsulation material.

摘要翻译： 形成钝化层的方法包括使宽带隙半导体材料的至少一个表面与包含碱性次氯酸盐的钝化剂接触以在所述至少一个表面上形成钝化层。 钝化层可以用一层封装材料封装。