Method and device for reading and for checking the time position of data response signals read out from a memory module to be tested
    2.
    发明授权
    Method and device for reading and for checking the time position of data response signals read out from a memory module to be tested 有权
    用于读取和检查从要测试的存储器模块读出的数据响应信号的时间位置的方法和装置

    公开(公告)号:US06871306B2

    公开(公告)日:2005-03-22

    申请号:US09907692

    申请日:2001-07-18

    IPC分类号: G11C29/50 G11C29/56 G11C29/00

    CPC分类号: G11C29/50 G11C29/56

    摘要: A method and a device for reading and for checking the time position of a data response read out from a memory module to be tested, in particular a DRAM memory operating in DDR operation. In a test receiver, the data response from the memory module to be tested is latched into a data latch with a data strobe response signal that has been delayed. A symmetrical clock signal is generated as a calibration signal. The calibration signal is used to calibrate the time position of the delayed data strobe response signal with respect to the data response. The delayed data strobe response signal is used for latching the data response. The delay time is programmed into a delay device during the calibration operation and also supplies a measure for testing precise time relationships between the data strobe response signal (DQS) and the data response.

    摘要翻译: 一种用于读取和检查从要测试的存储器模块读出的数据响应的时间位置的方法和装置,特别是在DDR操作中操作的DRAM存储器。 在测试接收机中,要测试的存储器模块的数据响应被锁存到具有被延迟的数据选通响应信号的数据锁存器中。 产生对称时钟信号作为校准信号。 校准信号用于校准相对于数据响应的延迟数据选通响应信号的时间位置。 延迟的数据选通响应信号用于锁存数据响应。 延迟时间在校准操作期间被编程到延迟器件中,并且还提供测量数据选通响应信号(DQS)和数据响应之间的精确时间关系。

    System for testing fast integrated digital circuits, in particular semiconductor memory modules
    3.
    发明授权
    System for testing fast integrated digital circuits, in particular semiconductor memory modules 失效
    用于测试快速集成数字电路的系统,特别是半导体存储器模块

    公开(公告)号:US06721904B2

    公开(公告)日:2004-04-13

    申请号:US09907693

    申请日:2001-07-18

    IPC分类号: H02H305

    摘要: The invention relates to a system for testing fast integrated digital circuits, in particular semiconductor modules, such as for example SDRAMs. In order to achieve the necessary chronological precision in the testing even of DDR-SDRAMs, with at the same time the high degree of parallelism of the test system required for mass production, an additional semiconductor circuit module (BOST module) is inserted into the signal path between a standard testing device and the SDRAM to be tested. This additional module is set up so as to multiply the relatively slow clock frequency of the conventional testing device, and to determine the signal sequence for control signals, addresses, and data background with which the SDRAM module is tested, dependent on signals of the testing device and also on register contents, programmed before the test, in the BOST module.

    摘要翻译: 本发明涉及一种用于测试快速集成数字电路,特别是半导体模块(例如SDRAM)的系统。 为了在DDR-SDRAM的测试中实现必要的按时间顺序的精度,同时大规模生产所需的测试系统的高度并行性,将额外的半导体电路模块(BOST模块)插入到信号中 标准测试设备和要测试的SDRAM之间的路径。 该附加模块被设置为乘以常规测试设备的相对较慢的时钟频率,并且根据测试信号来确定用于测试SDRAM模块的控制信号,地址和数据背景的信号序列 设备以及在测试前编程的寄存器内容,在BOST模块中。

    Circuit configuration for generating control signals for testing high-frequency synchronous digital circuits
    8.
    发明授权
    Circuit configuration for generating control signals for testing high-frequency synchronous digital circuits 有权
    用于产生用于测试高频同步数字电路的控制信号的电路配置

    公开(公告)号:US06839397B2

    公开(公告)日:2005-01-04

    申请号:US09907784

    申请日:2001-07-18

    IPC分类号: G11C29/14 G06M3/00

    CPC分类号: G11C29/14

    摘要: A circuit configuration for generating control signals for testing high-frequency synchronous digital circuits, especially memory chips, is described. A p-stage shift register which is clocked at a clock frequency corresponding to the high clock frequency of the digital circuit to be tested has connected to its parallel loading inputs p logical gates which logically combine a static control word with a dynamic n-position test word. The combined logical value is loaded into the shift register at a low-frequency loading clock rate so that a control signal, the value of which depends on the information loaded into the shift register in each clock cycle of the clock frequency of the latter is generated at the serial output of the shift register.

    摘要翻译: 描述用于产生用于测试高频同步数字电路,特别是存储器芯片的控制信号的电路配置。 以对应于要测试的数字电路的高时钟频率的时钟频率计时的p级移位寄存器连接到其并行加载输入p逻辑门,逻辑门逻辑地将静态控制字与动态n位置测试 字。 组合的逻辑值以低频加载时钟速率被加载到移位寄存器中,使得其值取决于在后者的时钟频率的每个时钟周期中加载到移位寄存器中的信息的控制信号 在移位寄存器的串行输出。

    Configuration for the transmission of signals between a data processing device and a functional unit
    9.
    发明授权
    Configuration for the transmission of signals between a data processing device and a functional unit 有权
    用于在数据处理设备和功能单元之间传输信号的配置

    公开(公告)号:US07466761B2

    公开(公告)日:2008-12-16

    申请号:US10292844

    申请日:2002-11-12

    IPC分类号: H04L27/04

    CPC分类号: G06F13/4018 G06F13/405

    摘要: A configuration for the transmission of signals includes a data processing device and a functional unit, which are connected to a first and second bus system, respectively, for the respective transmission of signals with different frequencies. A transmission unit is connected to the data processing device through the first bus system and to the functional unit through the second bus system, for the transmission and conversion of signals between the data processing device and the functional unit. It additionally serves for the electrical decoupling of the first bus system and the second bus system. As a result, independently of the electrical properties of the functional unit, a high data throughput is made possible in conjunction with still good detectability of the signals to be transmitted.

    摘要翻译: 用于信号传输的配置包括分别连接到第一和第二总线系统的数据处理设备和功能单元,用于各个具有不同频率的信号的传输。 传输单元通过第一总线系统连接到数据处理设备,并通过第二总线系统连接到功能单元,用于数据处理设备和功能单元之间的信号传输和转换。 它还用于第一总线系统和第二总线系统的电去耦。 结果,独立于功能单元的电气特性,可以将高数据吞吐量与待传输信号的可靠性良好相结合。

    Integrated DRAM memory device
    10.
    发明授权
    Integrated DRAM memory device 有权
    集成DRAM存储器件

    公开(公告)号:US07203123B2

    公开(公告)日:2007-04-10

    申请号:US11006865

    申请日:2004-12-08

    IPC分类号: G11C8/00

    摘要: An integrated memory device including a number of memory blocks including memory cells wherein the memory cells are arranged in a matrix of wordlines and bitlines, wherein the number of memory blocks including a first set of memory blocks the memory cells thereof having a first random access time and a second set of memory blocks the memory cells thereof having a second random access time, wherein the second random access time is smaller that the first random access time.

    摘要翻译: 一种包括多个存储块的集成存储器件,包括存储器单元,其中存储器单元被布置在字线和位线的矩阵中,其中包括第一组存储器的存储器块的数量将其存储单元具有第一随机存取时间 以及第二组存储器,其存储单元具有第二随机存取时间,其中所述第二随机存取时间小于所述第一随机存取时间。