摘要:
A device and method for manufacturing a high aperture ratio color filter panel of a liquid crystal display by reducing the resistance of the common electrode is disclosed. The method includes the steps of forming a black matrix array on a substrate, the black matrix array including a plurality of horizontal black matrix strips and a plurality of vertical black matrix strips, forming a plurality of color filters on the substrate, and the horizontal black matrix strips, so that portions of the horizontal black matrix strips are exposed, and forming a common electrode over the color filters.
摘要:
A device and method for manufacturing a high aperture ratio color filter panel of a liquid crystal display device by reducing the resistance of the common electrode is disclosed. The method includes the steps of forming a black matrix array on a substrate, the black matrix array including a plurality of horizontal black matrix strips and a plurality of vertical black matrix strips, forming a plurality of color filters on the substrate, and the horizontal black matrix strips, so that portions of the horizontal black matrix strips are exposed, and forming a common electrode over the color filters.
摘要:
A method of manufacturing an active panel of a liquid crystal display reduces the steps of a masking process and prevents line disconnection of a conductive material forming a pixel electrode which is caused by undercutting and eliminates a stepped profile formed during the etching processes. Materials forming a gate insulating layer, a semiconductor layer, an impurity doped semiconductor layer, and source and drain electrodes are sequentially deposited on a substrate. The source and drain electrodes are formed. Then, the semiconductor layer and the gate insulating layer are simultaneously formed. Thus, the mask processes in the method are reduced. However, this method results in a severe stepped profile caused by simultaneously etching the materials under the source and drain electrodes during the step of forming the source and drain electrode. As a result, line disconnection occurs due to the stepped profile during the forming step of a pixel electrode. In order to prevent this problem, a protection layer made of an organic material is formed prior to the step of forming the pixel electrode, resulting in a smooth surface and elimination of line disconnecting.
摘要:
The present invention is directed to a method for forming a color filter panel of a liquid crystal display device, including the steps of forming a first black matrix (BM) array on a substrate, the first BM array including a plurality of first horizontal BM strips and a plurality of first vertical BM strips; forming a plurality of color filters on the substrate; forming a second BM array on the first BM array; and forming a common electrode on the substrate. Further, the present invention is directed to a color filter panel of a liquid crystal display device, including a substrate; a first BM array formed on a substrate, the first BM array including a plurality of first horizontal BM strips and a plurality of first vertical BM strips; a plurality of color filters formed on the substrate; a second BM array formed on the first BM array; and a common electrode formed on the substrate.
摘要:
A method of manufacturing a substrate of an LCD prevents defective patterning of pixel electrodes and improves an aperture ratio of pixels by simplifying the steps of manufacturing a substrate of an LCD. A protection layer is formed on a substrate and the protection layer includes a light developable organic(BCB) layer which is patterned directly by exposing using a mask instead of patterning with a photo resist. The portion of the light developable organic layer remaining on the bottom part of contact holes after patterning is etched using a gate insulating layer. The etching process using the gate insulating layer is performed partially in order to expose the surface of the gate pad by using a plasma gas having about 85% CF4 and about 15% O2.
摘要:
An organic electro luminescence device includes: a display region and a non-display region defined in first and second substrates, sub-pixels defined in the display region; an array element including at least one TFT in the display region of the first substrate in each sub-pixel; a first electrode in an inner surface of the second substrate; a buffer in a predetermined region to partition an emission region of each sub-pixel on the first electrode, and an electrode separator on the buffer; an insulating layer in the emission region of each sub-pixel, and a spacer formed on the insulating layer; an organic electro luminescent layer in the emission region of each sub-pixel, the emission region including the insulating layer and the spacer; and a second electrode on the second substrate where the organic electro luminescent layer is formed.
摘要:
An organic electroluminescence device includes: first and second substrates spaced apart from each other by a predetermined distance; a plurality of array elements having TFTs formed on the first substrate; organic electroluminescent diodes each having a first electrode acting as a common electrode, an organic electroluminescent layer formed under the first electrode, and a second electrode patterned for a sub-pixel, which are sequentially formed on the second substrate; and conductive spacers for electrically connecting the array elements and corresponding organic electroluminescent diodes, wherein the array elements are arranged on the first substrate in a matrix configuration, and power lines for supplying voltages to the array elements are formed in a mesh configuration.
摘要:
A dual panel type organic electroluminescent device includes a first substrate having a first region and a second region corresponding to a peripheral region of the first region, TFTs formed in the first region, pad parts formed in the second region, a second substrate attached to the first substrate with a predetermined space therebetween, the second substrate overlapping the first region and exposing the second region of the first substrate, a first electrode, an organic electroluminescent layer and a second electrode formed on the second substrate facing the first substrate, a first electrical connection pattern connecting the thin film transistor with the second electrode, a second electrical connection pattern connecting one of the pad parts with the first electrode, a seal pattern disposed on edges of the first and second substrates, and a dummy spacer disposed between an image display region of the first region and the seal pattern.
摘要:
An organic electroluminescent display (ELD) device includes first and second substrates having a plurality of sub-pixels defined thereon, the first and second substrates being spaced apart from and opposing each other, an array element layer on the first substrate, the array element layer having a plurality of thin film transistors corresponding to each sub-pixel, a first electrode on an inner side of the second substrate, an organic light-emitting layer beneath the first electrode, a second electrode corresponding to each sub-pixel beneath the organic light-emitting layer, a plurality of electrical connecting patterns corresponding to each sub-pixel between the array element layer and the second electrode, the electrical connecting pattern being formed of material having a plastic deformation property, and a seal pattern formed on one of the first and second substrates, wherein a height of the electrical connecting pattern is smaller than an original height of the electrical connecting pattern measured before an attachment of the first and second substrates.
摘要:
An image sensor module is provided. The image sensor module includes a printed circuit board (PCB), an image sensor chip disposed on a first plane of the PCB and electrically connected to the PCB, and an image signal processing chip disposed on the first plane of the PCB and electrically connected to the PCB. An aspect ratio of the image signal processing chip is at least two times greater than an aspect ratio of the image sensor chip. A minimum feature size of a metal line implemented in the image sensor chip is at least 1.5 times greater than a minimum feature size of a metal line implemented in the image signal processing chip.