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公开(公告)号：US09127340B2
公开(公告)日：2015-09-08
申请号：US12701422
申请日：2010-02-05
IPC分类号： B05D5/12 , C23C8/04 , C23C8/10 , H01L21/02 , H01L21/28 , H01L21/314 , H01L21/316
CPC分类号： C23C8/04 , C23C8/10 , H01L21/02238 , H01L21/02249 , H01L21/28247 , H01L21/3144 , H01L21/31662
摘要： Silicon is selectively oxidized relative to a metal-containing material in a partially-fabricated integrated circuit. In some embodiments, the silicon and metal-containing materials are exposed portions of a partially-fabricated integrated circuit and may form part of, e.g., a transistor. The silicon and metal-containing material are oxidized in an atmosphere containing an oxidant and a reducing agent. In some embodiments, the reducing agent is present at a concentration of about 10 vol % or less.
摘要翻译： 相对于部分制造的集成电路中的含金属材料，硅被选择性地氧化。 在一些实施例中，硅和含金属的材料是部分制造的集成电路的暴露部分，并且可以形成例如晶体管的一部分。 硅和含金属的材料在含氧化剂和还原剂的气氛中被氧化。 在一些实施方案中，还原剂以约10vol％或更低的浓度存在。
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公开(公告)号：US08889565B2
公开(公告)日：2014-11-18
申请号：US12701407
申请日：2010-02-05
IPC分类号： H01L21/316 , H01L21/3105 , H01L21/28 , H01L21/321
CPC分类号： H01L21/28176 , H01L21/28211 , H01L21/28247 , H01L21/3105 , H01L21/321
摘要： Oxygen is selectively removed from metal-containing materials in a partially-fabricated integrated circuit. In some embodiments, the partially-fabricated integrated circuit has exposed silicon and metal-containing materials, e.g., as part of a transistor. The silicon and metal-containing material are oxidized. Oxygen is subsequently removed from the metal-containing material by an anneal in an atmosphere containing a reducing agent. Advantageously, the silicon oxide formed by the silicon oxidation is maintained while oxygen is removed from the metal-containing material, thereby leaving a high quality metal-containing material along with silicon oxide.
摘要翻译： 在部分制造的集成电路中，从含金属材料中选择性地除去氧气。 在一些实施例中，部分制造的集成电路具有暴露的硅和含金属的材料，例如作为晶体管的一部分。 含硅和金属的材料被氧化。 随后在含还原剂的气氛中通过退火将含氧物质从含金属材料中除去。 有利地，通过硅氧化形成的氧化硅被保持，同时从含金属的材料中除去氧，从而与氧化硅一起留下高质量的含金属材料。
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公开(公告)号：US20100216306A1
公开(公告)日：2010-08-26
申请号：US12390145
申请日：2009-02-20
申请人： Tatsuya Yoshimi , Rene de Blank , Jerome Noiray
发明人： Tatsuya Yoshimi , Rene de Blank , Jerome Noiray
IPC分类号： H01L21/285
CPC分类号： H01L21/28556 , C23C16/34 , C23C16/56 , H01L21/76841
摘要： In some embodiments, after depositing conductive material on substrates in a deposition chamber, a reducing gas is introduced into as the chamber in preparation for unloading the substrates. The deposition chamber can be a batch CVD chamber and the deposited material can be a metal nitride, e.g., a transition metal nitride such as titanium metal nitride. As part of the preparation for unloading substrates from the chamber, the substrates may be cooled and the chamber is backfilled with a reducing gas to increase the chamber pressure. It has been found that oxidants can be introduced into the chamber during this time. The introduction of a reducing gas has been found to protect exposed metal-containing films from oxidation during the backfill and/or cooling process. The reducing gas is formed of a reducing agent and a carrier gas, with the reducing agent being a minority component of the reducing gas. By providing a reducing agent, the effects of oxidation on exposed metal-containing films is reduced, therefore enhancing the conductive properties of the metal films.
摘要翻译： 在一些实施例中，在沉积室中的基板上沉积导电材料之后，将还原气体引入到室中以准备卸载基板。 沉积室可以是分批CVD室，并且沉积材料可以是金属氮化物，例如过渡金属氮化物，例如钛金属氮化物。 作为用于从腔室卸载衬底的准备的一部分，衬底可以被冷却，并且用还原气体回填腔室以增加腔室压力。 已经发现，在此期间可以将氧化剂引入室中。 已经发现引入还原气体可以保护暴露的含金属膜在回填和/或冷却过程中免于氧化。 还原气体由还原剂和载气形成，还原剂是还原气体的少数成分。 通过提供还原剂，氧化对暴露的含金属膜的影响降低，因此提高金属膜的导电性能。
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公开(公告)号：US07829457B2
公开(公告)日：2010-11-09
申请号：US12390145
申请日：2009-02-20
申请人： Tatsuya Yoshimi , Rene de Blank , Jerome Noiray
发明人： Tatsuya Yoshimi , Rene de Blank , Jerome Noiray
IPC分类号： H01L21/00
CPC分类号： H01L21/28556 , C23C16/34 , C23C16/56 , H01L21/76841
摘要： In some embodiments, after depositing conductive material on substrates in a deposition chamber, a reducing gas is introduced into as the chamber in preparation for unloading the substrates. The deposition chamber can be a batch CVD chamber and the deposited material can be a metal nitride, e.g., a transition metal nitride such as titanium metal nitride. As part of the preparation for unloading substrates from the chamber, the substrates may be cooled and the chamber is backfilled with a reducing gas to increase the chamber pressure. It has been found that oxidants can be introduced into the chamber during this time. The introduction of a reducing gas has been found to protect exposed metal-containing films from oxidation during the backfill and/or cooling process. The reducing gas is formed of a reducing agent and a carrier gas, with the reducing agent being a minority component of the reducing gas. By providing a reducing agent, the effects of oxidation on exposed metal-containing films is reduced, therefore enhancing the conductive properties of the metal films.
摘要翻译： 在一些实施例中，在沉积室中的基板上沉积导电材料之后，将还原气体引入到室中以准备卸载基板。 沉积室可以是分批CVD室，并且沉积材料可以是金属氮化物，例如过渡金属氮化物，例如钛金属氮化物。 作为用于从腔室卸载衬底的准备的一部分，衬底可以被冷却，并且用还原气体回填腔室以增加腔室压力。 已经发现，在此期间可以将氧化剂引入室中。 已经发现引入还原气体可以保护暴露的含金属膜在回填和/或冷却过程中免于氧化。 还原气体由还原剂和载气形成，还原剂是还原气体的少数成分。 通过提供还原剂，氧化对暴露的含金属膜的影响降低，因此提高金属膜的导电性能。
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公开(公告)号：US20100210117A1
公开(公告)日：2010-08-19
申请号：US12701407
申请日：2010-02-05
IPC分类号： H01L21/316 , H01L21/26
CPC分类号： H01L21/28176 , H01L21/28211 , H01L21/28247 , H01L21/3105 , H01L21/321
摘要： Oxygen is selectively removed from metal-containing materials in a partially-fabricated integrated circuit. In some embodiments, the partially-fabricated integrated circuit has exposed silicon and metal-containing materials, e.g., as part of a transistor. The silicon and metal-containing material are oxidized. Oxygen is subsequently removed from the metal-containing material by an anneal in an atmosphere containing a reducing agent. Advantageously, the silicon oxide formed by the silicon oxidation is maintained while oxygen is removed from the metal-containing material, thereby leaving a high quality metal-containing material along with silicon oxide.
摘要翻译： 在部分制造的集成电路中，从含金属材料中选择性地除去氧气。 在一些实施例中，部分制造的集成电路具有暴露的硅和含金属的材料，例如作为晶体管的一部分。 含硅和金属的材料被氧化。 随后在含还原剂的气氛中通过退火将含氧物质从含金属材料中除去。 有利地，通过硅氧化形成的氧化硅被保持，同时从含金属的材料中除去氧，从而与氧化硅一起留下高质量的含金属材料。
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公开(公告)号：US20100209597A1
公开(公告)日：2010-08-19
申请号：US12701422
申请日：2010-02-05
CPC分类号： C23C8/04 , C23C8/10 , H01L21/02238 , H01L21/02249 , H01L21/28247 , H01L21/3144 , H01L21/31662
摘要： Silicon is selectively oxidized relative to a metal-containing material in a partially-fabricated integrated circuit. In some embodiments, the silicon and metal-containing materials are exposed portions of a partially-fabricated integrated circuit and may form part of, e.g., a transistor. The silicon and metal-containing material are oxidized in an atmosphere containing an oxidant and a reducing agent. In some embodiments, the reducing agent is present at a concentration of about 10 vol % or less.
摘要翻译： 相对于部分制造的集成电路中的含金属材料，硅被选择性地氧化。 在一些实施例中，硅和含金属的材料是部分制造的集成电路的暴露部分，并且可以形成例如晶体管的一部分。 硅和含金属的材料在含有氧化剂和还原剂的气氛中被氧化。 在一些实施方案中，还原剂以约10vol％或更低的浓度存在。
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