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公开(公告)号：US5374456A
公开(公告)日：1994-12-20
申请号：US995864
申请日：1992-12-23
IPC分类号： B29C35/08 , B29C59/14 , C23C8/36 , C23C14/32 , C23C14/48 , H01J37/317 , H01L21/265 , B05D3/06
CPC分类号： C23C8/36 , B29C59/14 , C23C14/32 , C23C14/48 , B29C2035/0872 , B29C2035/0877
摘要： An object (30) is plasma processed by placing an electrically conducting grid (34) over all or a portion of the surface (32) of the object (30) so that the grid (34) generally follows the contours of the surface (32) but is displaced outwardly from the surface (32). Ions or electrons from a plasma surrounding the object (30) are accelerated into the surface (32) of the object (30) using as a processing driving force an electrical potential applied to the electrically conducting grid (34). The use of a contoured conducting grid (34) allows plasma processing of large, electrically nonconducting objects and objects having sharp surface features or recesses.
摘要翻译： 通过将导电栅格（34）放置在物体（30）的表面（32）的全部或一部分上，使得栅格（34）大致遵循表面（32）的轮廓，等离子体处理物体 ），但是从表面（32）向外移位。 使用作为施加到导电栅极（34）的电位的处理驱动力将来自围绕物体（30）的等离子体的离子或电子加速到物体（30）的表面（32）中。 使用成形的导电栅格（34）允许等离子体处理具有尖锐表面特征或凹陷的大的非导电物体和物体。
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公开(公告)号：US5330800A
公开(公告)日：1994-07-19
申请号：US971433
申请日：1992-11-04
IPC分类号： C23C14/48 , H01J37/317 , H01J37/32 , H01L21/265 , H01L21/324 , B05D3/06
CPC分类号： H01J37/32412
摘要： A high dose rate, high impedance plasma ion implantation method and apparatus to apply high voltage pulses to a target cathode within an ionization chamber to both sustain a plasma in the gas surrounding the target, and to implant ions from the plasma into the target during at least a portion of each pulse. Operating at voltages in excess of 50 kV that are too high for the reliable formation of a conventional glow discharge, the plasma is instead sustained through a beam-plasma instability interaction between secondary electrons emitted from the target and a background pulsed plasma. The voltage pulses are at least about 50 kV, and preferably 100 kV or more. Pulse durations are preferably less than 8 microseconds, with a frequency in the 50-1,000 Hz range. The preferred gas pressure range is 1.times.10.sup.-4 -1.times.10.sup.-3 Torr; auxiliary electrodes can be used at the lower pressures to provide sufficient seed electrons for initiating a plasma, which is sustained by the beam-plasma instability interaction.
摘要翻译： 一种高剂量率，高阻抗等离子体离子注入方法和装置，用于向电离室内的目标阴极施加高电压脉冲以维持目标周围的气体中的等离子体，并且在时间段期间将离子从等离子体注入靶中 每个脉冲的最小部分。 在超过50kV的电压下工作，对于可靠地形成常规的辉光放电来说太高，等离子体被维持通过从靶发射的二次电子和背景脉冲等离子体之间的束 - 等离子体不稳定性相互作用。 电压脉冲为至少约50kV，优选为100kV以上。 脉冲持续时间优选小于8微秒，频率在50-1,000Hz范围内。 优选的气体压力范围是1×10-4-1×10-3乇; 可以在较低的压力下使用辅助电极以提供充足的种子电子来引发等离子体，其由束 - 等离子体不稳定性相互作用所持续。
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3.发明授权
公开(公告)号：US5487922A
公开(公告)日：1996-01-30
申请号：US259371
申请日：1994-06-14
CPC分类号： C23C14/022 , C23C14/0641
摘要： Wear-resistant titanium nitride coatings onto cast iron and other carbon-containing materials is enhanced by means of a new surface preparation and deposition process. The conventional pre-deposition surface cleaning by Ar.sup.+ ion bombardment is replaced by a hydrogen-ion bombardment process which cleans the substrate surface by chemical reaction with minimal sputtering and simultaneously removes graphite present on the cast iron surface. Removal of the graphite significantly improves the wear resistance of titanium nitride, since the presence of graphite causes initiation of wear at those sites. Hydrogen ion bombardment or electron bombardment may be used to heat the substrate to a chosen temperature. Finally, titanium nitride is deposited by reactive sputtering with simultaneous bombardment of high-flux Ar.sup.+ ions from an independently generated dense plasma. The resulting titanium nitride coating on cast iron evidences superior wear properties and adhesion compared to conventional reactive evaporation deposition techniques for titanium nitride.
摘要翻译： 通过新的表面处理和沉积工艺，增强了对铸铁和其他含碳材料的耐磨氮化钛涂层。 通过Ar +离子轰击的常规预沉积表面清洁被氢离子轰击过程所代替，氢离子轰击过程通过化学反应以最小的溅射清洗基底表面，同时去除铸铁表面上存在的石墨。 由于石墨的存在引起了这些部位的磨损，因此去除石墨显着提高了氮化钛的耐磨性。 可以使用氢离子轰击或电子轰击将基底加热到所选择的温度。 最后，通过反应溅射沉积氮化钛，同时从独立产生的致密等离子体轰击高通量Ar +离子。 与用于氮化钛的常规反应蒸发沉积技术相比，所得到的铸铁上的氮化钛涂层证明了优异的耐磨性和粘附性。
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公开(公告)号：US5607509A
公开(公告)日：1997-03-04
申请号：US635527
申请日：1996-04-22
IPC分类号： C23C14/48 , H01J37/317 , H01J37/32 , H01L21/265 , H01L21/324 , C23C16/00
CPC分类号： H01J37/32412
摘要： A high dose rate, high impedance plasma ion implantation method and apparatus to apply high voltage pulses to a target cathode within an ionization chamber to both sustain a plasma in the gas surrounding the target, and to implant ions from the plasma into the target during at least a portion of each pulse. Operating at voltages in excess of 50 kV that are too high for the reliable formation of a conventional glow discharge, the plasma is instead sustained through a beam-plasma instability interaction between secondary electrons emitted from the target and a background pulsed plasma. The voltage pulses are at least about 50 kV, and preferably 100 kV or more. Pulse durations are preferably less than 8 microseconds, with a frequency in the 50-1,000 Hz range. The preferred gas pressure range is 1.times.10.sup.-4 -1.times.10.sup.-3 Torr; auxiliary electrodes can be used at the lower pressures to provide sufficient seed electrons for initiating a plasma, which is sustained by the beam-plasma instability interaction.
摘要翻译： 一种高剂量率，高阻抗等离子体离子注入方法和装置，用于向电离室内的目标阴极施加高电压脉冲以维持目标周围的气体中的等离子体，并且在时间段期间将离子从等离子体注入靶中 每个脉冲的最小部分。 在超过50kV的电压下工作，对于可靠地形成常规的辉光放电来说太高，等离子体被维持通过从靶发射的二次电子和背景脉冲等离子体之间的束 - 等离子体不稳定性相互作用。 电压脉冲为至少约50kV，优选为100kV以上。 脉冲持续时间优选小于8微秒，频率在50-1,000Hz范围内。 优选的气体压力范围是1×10-4-1×10-3乇; 可以在较低的压力下使用辅助电极以提供充足的种子电子来引发等离子体，其由束 - 等离子体不稳定性相互作用所持续。
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公开(公告)号：US08428642B2
公开(公告)日：2013-04-23
申请号：US12150968
申请日：2008-05-02
IPC分类号： H04M1/00
CPC分类号： B60R25/102 , B60R2325/205 , H04M1/72533 , H04M11/04 , H04M2250/12
摘要： Long-range remote communication and control of a vehicle is achieved with primary and secondary cellular devices provided by the vehicle user. The primary cellular device is retained by the user, while the secondary cellular device is dedicated to the vehicle and placed in a docking station provided in a vehicle instrument panel or console. The vehicle docking station is equipped with typical cell phone electrical interfaces to supply battery charging current and to establish a bi-directional data communication link between the secondary cellular device and an on-board vehicle computer. The secondary cellular device remains activated, and provides a low-cost remotely accessible communication link between the on-board vehicle computer and the primary cellular device or any other phone, provided that specified security conditions are satisfied.
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公开(公告)号：US5537005A
公开(公告)日：1996-07-16
申请号：US242569
申请日：1994-05-13
CPC分类号： H01J3/025
摘要： Plasma-cathode electron gun structures capable of operation in low-pressure, e.g.,
摘要翻译： 公开了能够在低压例如<5×10 -3 Torr的可电离气体环境中操作的等离子体 - 阴极电子枪结构。 它们利用限定等离子体面的部分透明电极在外壳内使用热电子发射器。 间隔阳极设置在电极附近以从等离子体表面提取电子束。 磁系统形成向内定向的场，并且等离子体电子的一部分被引导通过该场以提高电离效率。
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公开(公告)号：US5019752A
公开(公告)日：1991-05-28
申请号：US207603
申请日：1988-06-16
申请人： Robert W. Schumacher
发明人： Robert W. Schumacher
CPC分类号： H01J17/066 , H01J17/44
摘要： A plasma switch employs a cold cathode which yields secondary electrons to sustain a plasma within the switch. The cathode is provided with a series of perturbations which increase the effective cathode surface area exposed to the plasma and increase the average effective path lengths of secondary electrons emitted from the cathode and the probability of such electrons having ionizing collisions with gas molecules within the switch. The interior cathode surface is provided with a coating formed from chromium or a chromium mixture. Chromium combines a high rate of secondary electron emission with low sputtering and other advantageous properties for plasma switch operation. Various types of chromium-plated perturbations are described.
摘要翻译： 等离子体开关采用冷阴极，其产生二次电子以维持开关内的等离子体。 阴极设置有一系列扰动，这些扰动增加了暴露于等离子体的有效阴极表面积，并增加了从阴极发射的二次电子的平均有效路径长度以及这些电子与开关内的气体分子电离碰撞的可能性。 内部阴极表面设置有由铬或铬混合物形成的涂层。 Chromium将高速二次电子发射与低溅射和其他有利的等离子体开关操作性质相结合。 描述了各种类型的镀铬扰动。
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公开(公告)号：US4978889A
公开(公告)日：1990-12-18
申请号：US181300
申请日：1988-04-14
申请人： Robert W. Schumacher
发明人： Robert W. Schumacher
IPC分类号： H01J25/00
CPC分类号： H01J25/005
摘要： A plasma wave tube and associated operating method are described in which a pair of cold-cathode electron beam generators discharge counterpropagating electron beams into an ionizable gas, preferably hydrogen or a noble gas, within a waveguide housing. A voltage within the approximate range of 4-20 kV relative to the waveguide housing is applied to the cathodes to produce electron beams with current densities of at least about 1 amp/cm.sup.2. The beams form a plasma within the gas and couple with the plasma to produce electron plasma waves, which are non-linearly coupled to radiate electromagnetic energy in the microwave to mm-wave region. A magnetic field is established within the waveguide between the cathodes to confine the plasma, and to control the beam discharge impedance. The gas pressure is held within the approximate range of 1-100 mTorr, preferably about 10-30 mTorr, to damp plasma instabilities and sustain the beam voltages, while the magnetic field is within the approximate range of 100-500 Gauss. A very rapid frequency slewing or chirping is achieved with a relatively high magnetic field that reduces the discharge impedance to the lower end of the permissible range. Frequency-stabilized operation is achieved with a lower magnetic field that increases the discharge impedance so that the beam current changes very slowly with time.
摘要翻译： 描述了一种等离子体波管及其相关的操作方法，其中一对冷阴极电子束发生器将反向传播的电子束排放到波导壳体内的可电离气体，优选氢或惰性气体中。 将相对于波导壳体的4-20kV范围内的电压施加到阴极以产生电流密度为至少约1安培/ cm2的电子束。 光束在气体内形成等离子体并与等离子体耦合以产生电子等离子体波，其被非线性耦合以将微波中的电磁能辐射到毫米波区域。 在阴极之间的波导内建立磁场以限制等离子体，并且控制光束放电阻抗。 气体压力保持在1-100mTorr，优选约10-30mTorr的近似范围内，以阻止等离子体不稳定性并维持射束电压，同时磁场在100-500高斯的近似范围内。 通过相对较高的磁场实现非常快的频率回转或啁啾，从而将放电阻抗降低到允许范围的下限。 通过增加放电阻抗的较低磁场实现频率稳定的操作，使得束电流随时间变化非常缓慢。
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公开(公告)号：US5075594A
公开(公告)日：1991-12-24
申请号：US406673
申请日：1989-09-13
CPC分类号： H01J17/063 , H01J17/54 , H01T2/02
摘要： A hollow cathode capable of self-heating by back ion bombardment to a thermionic emission temperature axially discharges therefrom an ionized plasma of an ambient gas such as xenon. Electrons are axially or radially extractable from the plasma by an anode. A voltage is applied to a keeper electrode disposed between the cathode and anode to sustain plasma discharge of the gas between the cathode and keeper electrode. A control electrode is disposed between the keeper electrode and the anode. Application of a positive voltage (relative to the cathode) to the control electrode causes the plasma discharge to extend from the cathode to the anode, thus closing the switch. Application of a negative control electrode voltage, or simply returning the control electrode to cathode potential, causes the plasma discharge to retract back to the area of the keeper electrode, thereby opening the switch.
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公开(公告)号：US4642522A
公开(公告)日：1987-02-10
申请号：US621420
申请日：1984-06-18
CPC分类号： H01J3/021
摘要： An improved Wire-Ion-Plasma Electron-gun (WIP E-gun) is disclosed, having a very rapid electron beam current interruption capability. An auxiliary grid is employed to provide a potential barrier to the reservoir of plasma ions in the ionization chamber, thereby containing these ions in the chamber after the wire anode is turned "OFF". The E-gun current fall time is reduced to the time required for the plasma potential to fall in the ionization chamber after the wire anode is turned "OFF". The WIP E-gun current fall time is reduced, from greater than fifteen microseconds for devices not employing the invention, to less than two microseconds.
摘要翻译： 公开了一种改进的线离子等离子体电子枪（WIP E-gun），具有非常快的电子束电流中断能力。 辅助栅格用于为电离室中的等离子体离子的储存器提供势垒，从而在电极阳极“断开”之后，在室内容纳这些离子。 电子枪电流下降时间减少到电线阳极转为“关闭”后等离子体电势落入电离室所需的时间。 WIP电子枪电流下降时间从不超过十五微秒用于不使用本发明的器件减少到小于两微秒。
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