摘要:
The invention is directed to compounds of Formula I: wherein Q, Y, A are set forth in the specification, as well as solvates, hydrates, tautomers or pharmaceutically acceptable salts thereof, that inhibit protein kinases, especially Aurora-1, Aurora-2 and Aurora-3 kinases.
摘要:
The invention is directed to compounds of Formula (I): to pharmaceutical compositions containing such compounds and to methods of treatment using them.
摘要:
The invention is directed to compounds of Formula (I): to pharmaceutical compositions containing such compounds and to methods of treatment using them.
摘要:
The invention is directed to compounds of Formula (I): to pharmaceutical compositions containing such compounds and to methods of treatment using them.
摘要:
The invention is directed to compounds of Formula (I): to pharmaceutical compositions containing such compounds and to methods of treatment using them.
摘要:
An aryl amide compound of Formula (I): or a pharmaceutically acceptable form thereof is disclosed. The compound is an ACC inhibitor and therefore useful in treating an ACC-mediated condition.
摘要:
The invention is directed to compounds of Formulae I and II: wherein R1, R2, R3, R5, R6, Y1, Y2, Y3, Y4 and X are set forth in the specification, as well as solvates, hydrates, tautomers or pharmaceutically acceptable salts thereof, that inhibit protein tyrosine kinases, especially c-fms kinase.
摘要:
FIG. 1 is a front, top perspective view of a glider exercise device, showing my new design; FIG. 2 is a rear, bottom perspective view thereof; FIG. 3 is a front elevation view thereof; FIG. 4 is a rear elevation view thereof; FIG. 5 is a left side elevation view thereof; FIG. 6 is a right side elevation view thereof; FIG. 7 is a top plan view thereof; and, FIG. 8 is a bottom plan view thereof.
摘要:
Gate control of power semiconductor devices using reduced gate drivers is disclosed. A circuit breaker may include a multitude of transistors, such as insulated gate bipolar transistors (IGBTs), connected in series with one another. Each transistor may be connected to a respective gate resistor. Diodes may be connected between various gate resistors. One or more resistor-capacitor (RC) snubber circuits may be provided in parallel with one or more of the transistors. Likewise, one or more metal-oxide varistors (MOVs) may be connected in parallel to one or more of the transistors. A gate driver (e.g., a single gate drive) may be connected to the one or more diodes and an emitter of at least one of transistors.
摘要:
Methods and apparatuses for manufacturing are disclosed, including (a) providing an apparatus having: a laser; scanner; powder injection system; powder spreading system; dichroic filter; imager-and-processor; and computer; (b) programming the computer with specifications of a sample; (c) using the computer to set initial parameters based on the sample specifications; (d) adjusting a stage to position the sample; (e) focusing and scanning electromagnetic radiation onto the sample while powder is concurrently injected onto the sample in order to deposit a layer; (f) capturing two-dimensional images of the sample and probing the sample to determine whether the deposited layer was manufactured per the specifications; (g) use the computer to adjust the three-dimensional manufacturing parameters based on the determination made in step (f) prior to additively manufacturing a subsequent layer or making repairs; and (h) repeating steps (d), (e), (f), and (g) until the manufacture is complete. Other embodiments are described and claimed.