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    POLYCRYSTALLINE DIAMOND COMPACT INCLUDING A CARBONATE-CATALYZED POLYCRYSTALLINE DIAMOND BODY AND APPLICATIONS THEREFOR
    1.
    发明申请
    POLYCRYSTALLINE DIAMOND COMPACT INCLUDING A CARBONATE-CATALYZED POLYCRYSTALLINE DIAMOND BODY AND APPLICATIONS THEREFOR 有权
    多晶金刚石，包括碳酸钙催化的多晶金刚石体及其应用

    公开(公告)号：US20120241224A1

    公开(公告)日：2012-09-27

    申请号：US13070636

    申请日：2011-03-24

    申请人： Jiang Qian ,  Kenneth E. Bertagnolli ,  Jair J. Gonzalez ,  Craig H. Cooley

    发明人： Jiang Qian ,  Kenneth E. Bertagnolli ,  Jair J. Gonzalez ,  Craig H. Cooley

    IPC分类号： E21B10/46 ,  B24D3/06 ,  B01J3/06 ,  B24D18/00

    CPC分类号： C22C26/00 ,  B22F5/00 ,  C09K3/1409 ,  E21B10/567 ,  F16C33/043 ,  F16C33/26 ,  F16C2206/04 ,  F16C2352/00

    摘要： In an embodiment, a polycrystalline diamond compact (“PDC”) includes a substrate and a pre-sintered polycrystalline diamond (“PCD”) table bonded to the substrate. The pre-sintered PCD table includes an upper surface, a back surface bonded to the substrate, and at least one lateral surface extending between the upper surface and the back surface. The pre-sintered PCD table includes a region including at least a residual amount of at least one interstitial constituent disposed in at least a portion of the interstitial regions thereof, and a bonding region. The at least one interstitial constituent includes at least one metal carbonate and/or at least one metal oxide. The region extends inwardly from the upper surface and the at least one lateral surface.

    摘要翻译： 在一个实施方案中，多晶金刚石复合体（“PDC”）包括基底和与基底结合的预烧结多晶金刚石（“PCD”）台。 预烧结PCD台包括上表面，与基底结合的后表面，以及在上表面和后表面之间延伸的至少一个侧表面。 预烧结PCD表包括至少包括设置在其间隙区域的至少一部分中的至少一个间隙成分的剩余量的区域和接合区域。 至少一种间隙成分包括至少一种金属碳酸盐和/或至少一种金属氧化物。 该区域从上表面和至少一个侧表面向内延伸。

    Polycrystalline diamond compact including a carbonate-catalyzed polycrystalline diamond body and applications therefor
    2.
    发明授权
    Polycrystalline diamond compact including a carbonate-catalyzed polycrystalline diamond body and applications therefor 有权
    多晶金刚石复合体包括碳酸酯催化的多晶金刚石体及其应用

    公开(公告)号：US08727044B2

    公开(公告)日：2014-05-20

    申请号：US13070636

    申请日：2011-03-24

    申请人： Jiang Qian ,  Kenneth E. Bertagnolli ,  Jair J. Gonzalez ,  Craig H. Cooley

    发明人： Jiang Qian ,  Kenneth E. Bertagnolli ,  Jair J. Gonzalez ,  Craig H. Cooley

    IPC分类号： E21B10/36

    CPC分类号： C22C26/00 ,  B22F5/00 ,  C09K3/1409 ,  E21B10/567 ,  F16C33/043 ,  F16C33/26 ,  F16C2206/04 ,  F16C2352/00

    摘要： In an embodiment, a polycrystalline diamond compact (“PDC”) includes a substrate and a pre-sintered polycrystalline diamond (“PCD”) table bonded to the substrate. The pre-sintered PCD table includes an upper surface, a back surface bonded to the substrate, and at least one lateral surface extending between the upper surface and the back surface. The pre-sintered PCD table includes a region including at least a residual amount of at least one interstitial constituent disposed in at least a portion of the interstitial regions thereof, and a bonding region. The at least one interstitial constituent includes at least one metal carbonate and/or at least one metal oxide. The region extends inwardly from the upper surface and the at least one lateral surface.

    摘要翻译： 在一个实施方案中，多晶金刚石复合体（“PDC”）包括基底和与基底结合的预烧结多晶金刚石（“PCD”）台。 预烧结PCD台包括上表面，与基底结合的后表面，以及在上表面和后表面之间延伸的至少一个侧表面。 预烧结PCD表包括至少包括设置在其间隙区域的至少一部分中的至少一个间隙成分的剩余量的区域和接合区域。 至少一种间隙成分包括至少一种金属碳酸盐和/或至少一种金属氧化物。 该区域从上表面和至少一个侧表面向内延伸。

    Cutting element assembly including one or more superabrasive cutting elements, drill bit utilizing the same, and methods of manufacture
    4.
    发明授权
    Cutting element assembly including one or more superabrasive cutting elements, drill bit utilizing the same, and methods of manufacture 有权
    包括一个或多个超级磨料切割元件的切割元件组件，利用其的钻头以及制造方法

    公开(公告)号：US08479845B1

    公开(公告)日：2013-07-09

    申请号：US12853752

    申请日：2010-08-10

    申请人： Jiang Qian ,  Debkumar Mukhopadhyay ,  Jason Wiggins ,  Kenneth E. Bertagnolli ,  Shawn C. Scott ,  Kevin Duy Nguyen ,  Michael A. Vail

    发明人： Jiang Qian ,  Debkumar Mukhopadhyay ,  Jason Wiggins ,  Kenneth E. Bertagnolli ,  Shawn C. Scott ,  Kevin Duy Nguyen ,  Michael A. Vail

    IPC分类号： E21B10/42

    CPC分类号： E21B10/56 ,  E21B10/43 ,  E21B10/52 ,  E21B10/567 ,  E21B10/633

    摘要： Some embodiments relate to cutting element assemblies including a superabrasive cutting element that may be axially compressed to enhance the damage tolerance thereof, enclosed in an enclosure that exposes the superabrasive cutting element therethrough, enclosed in an enclosure that restricts rotation of the superabrasive cutting element, or combinations of the foregoing. Additionally, some embodiments relate to cutting element assemblies in which a superabrasive cutting element is mechanically fastened to a base, such as a substrate or directly to a bit body of a rotary drill bit. Some embodiments also relate to cutting element assemblies including one or more superabrasive cutting elements that are rotatable about a longitudinal axis of the cutting element assembly, that may be axially compressed to enhance the damage tolerance thereof, that may be enclosed in an enclosure that exposes the superabrasive cutting element therethrough, or combinations thereof.

    摘要翻译： 一些实施例涉及切割元件组件，其包括可以被轴向压缩以增强其破坏公差的超研磨切割元件，其包围在限制超研磨切割元件的旋转的外壳中的外罩中，该外壳将露出超硬磨料切割元件， 上述的组合。 另外，一些实施例涉及切割元件组件，其中超研磨切割元件机械地紧固到基座，例如基底或直接连接到旋转钻头的钻头体。 一些实施例还涉及切割元件组件，其包括可围绕切割元件组件的纵向轴线旋转的一个或多个超级研磨切割元件，其可以被轴向压缩以增强其损伤容限，其可以封闭在暴露于 超研磨切割元件或其组合。

    Anvils and ultra-high pressure apparatuses using the same
    5.
    发明授权
    Anvils and ultra-high pressure apparatuses using the same 有权
    砧座和使用其的超高压装置

    公开(公告)号：US09194824B1

    公开(公告)日：2015-11-24

    申请号：US13425647

    申请日：2012-03-21

    申请人： Jiang Qian ,  Kenneth E. Bertagnolli

    发明人： Jiang Qian ,  Kenneth E. Bertagnolli

    IPC分类号： G01N23/20 ,  G01N21/03

    CPC分类号： G01N21/0317 ,  G01N23/20041

    摘要： Polycrystalline diamond (“PCD”) anvils and associated ultra-high pressure apparatuses employing such anvils. The PCD anvils include an anvil body defining an anvil face. The anvil body comprises a plurality of diamond grains defining a plurality of interstitial regions, with a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions. The plurality and diamond grains and the metal-solvent catalyst of the PCD collectively exhibit a coercivity of about 115 Oe or more and a specific magnetic saturation of about 15 G·cm3/g or less.

    摘要翻译： 多晶金刚石（“PCD”）砧座和使用这种砧座的相关超高压装置。 PCD砧包括定义砧面的砧体。 砧体包括限定多个间隙区域的多个金刚石晶粒，其中金属溶剂催化剂占据多个间隙区域的至少一部分。 PCD的多个金刚石晶粒和金属 - 溶剂催化剂共同表现出约115Oe以上的矫顽力和约15G·cm 3 / g以下的比磁饱和。

    POLYCRYSTALLINE DIAMOND COMPACT INCLUDING A CARBONATE-CATALYZED POLYCRYSTALLINE DIAMOND TABLE AND APPLICATIONS THEREFOR
    7.
    发明申请
    POLYCRYSTALLINE DIAMOND COMPACT INCLUDING A CARBONATE-CATALYZED POLYCRYSTALLINE DIAMOND TABLE AND APPLICATIONS THEREFOR 有权
    多晶金刚石，包括碳酸钙催化的多晶金刚石表及其应用

    公开(公告)号：US20130043078A1

    公开(公告)日：2013-02-21

    申请号：US13552052

    申请日：2012-07-18

    申请人： Jiang Qian ,  C. Eugene McMurray ,  Debkumar Mukhopadhyay ,  Jason K. Wiggins ,  Michael A. Vail ,  Kenneth E. Bertagnolli

    发明人： Jiang Qian ,  C. Eugene McMurray ,  Debkumar Mukhopadhyay ,  Jason K. Wiggins ,  Michael A. Vail ,  Kenneth E. Bertagnolli

    IPC分类号： B24D3/06 ,  B23B51/00 ,  E21B10/46 ,  B24D18/00

    CPC分类号： B24D3/10 ,  B22F7/062 ,  B22F2005/001 ,  B24D18/0009 ,  C22C26/00 ,  E21B10/54 ,  E21B10/56 ,  E21B10/567 ,  F16C33/043 ,  F16C33/108 ,  F16C2352/00 ,  Y10T408/89

    摘要： In an embodiment, a polycrystalline diamond compact includes a substrate and a preformed polycrystalline diamond table bonded to the substrate. The table includes bonded diamond grains defining interstitial regions. The table includes an upper surface, a back surface bonded to the substrate, and at least one lateral surface extending therebetween. The table includes a first region extending inwardly from the upper surface and the lateral surface. The first region exhibits a first interstitial region concentration and includes at least one interstitial constituent disposed therein, which may be present in at least a residual amount and includes at least one metal carbonate and/or at least one metal oxide. The table includes a second bonding region adjacent to the substrate that extends inwardly from the back surface. The second bonding region exhibits a second interstitial region concentration that is greater than the first interstitial region concentration and includes a metallic infiltrant therein.

    摘要翻译： 在一个实施例中，多晶金刚石致密体包括基底和结合到基底的预成型多晶金刚石台。 该表包括定义间隙区域的结合金刚石颗粒。 桌子包括上表面，粘合到基底的后表面和在它们之间延伸的至少一个侧表面。 桌子包括从上表面和侧表面向内延伸的第一区域。 第一区域表现出第一间隙区域浓度并且包括至少一个置于其中的间隙成分，其可以以至少残留量存在并且包括至少一种金属碳酸盐和/或至少一种金属氧化物。 桌子包括与衬底相邻的第二接合区域，其从后表面向内延伸。 第二结合区域表现出比第一间隙区域浓度大的第二间隙区域浓度，并且其中包括金属渗透剂。

    Polycrystalline diamond materials and related products
    8.
    发明授权
    Polycrystalline diamond materials and related products 失效
    多晶金刚石材料及相关产品

    公开(公告)号：US08361429B2

    公开(公告)日：2013-01-29

    申请号：US13245249

    申请日：2011-09-26

    申请人： Michael A. Vail ,  Kenneth E. Bertagnolli ,  Jason Wiggins ,  Jiang Qian ,  David P. Miess

    发明人： Michael A. Vail ,  Kenneth E. Bertagnolli ,  Jason Wiggins ,  Jiang Qian ,  David P. Miess

    IPC分类号： B01J3/06 ,  E21B10/36 ,  B24D3/02 ,  C09C1/68 ,  B29C67/00

    CPC分类号： E21B10/46 ,  B01J3/062 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685

    摘要： Embodiments relate to methods of fabricating PCD materials by subjecting a mixture that exhibits a broad diamond particle size distribution to an HPHT process, PCD materials so-formed, and PDCs including a polycrystalline diamond table comprising such PCD materials. In an embodiment, a PCD material includes a plurality of bonded diamond grains that exhibit a substantially unimodal diamond grain size distribution characterized, at least in part, by a parameter θ that is less than about 1.0. θ = x 6 · σ , where x is the average grain size of the substantially unimodal diamond grain size distribution, and σ is the standard deviation of the substantially unimodal diamond grain size distribution.

    摘要翻译： 实施方案涉及通过使表现出宽金刚石粒度分布的混合物经受HPHT方法，所形成的PCD材料和包括包含这种PCD材料的多晶金刚石台的PDC来制造PCD材料的方法。 在一个实施方案中，PCD材料包括多个结合的金刚石晶粒，其表现出基本上单峰金刚石晶粒尺寸分布，其至少部分地由参数和特征表征; 小于约1.0。 ＆thetas; = x 6·＆sgr ，其中x是基本上单峰金刚石晶粒尺寸分布的平均晶粒尺寸， 是基本上单峰金刚石晶粒尺寸分布的标准偏差。