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    CMP pad cleaning apparatus
    1.
    发明授权
    CMP pad cleaning apparatus 有权
    CMP垫清洁装置

    公开(公告)号：US09138861B2

    公开(公告)日：2015-09-22

    申请号：US13396854

    申请日：2012-02-15

    申请人： Jiann Lih Wu ,  Bo-I Lee ,  Huang Soon Kang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    发明人： Jiann Lih Wu ,  Bo-I Lee ,  Huang Soon Kang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC分类号： B24B53/00 ,  B24B53/017

    CPC分类号： B24B53/017

    摘要： The present disclosure relates to a two-phase cleaning element that enhances polishing pad cleaning so as to prevent wafer scratches and contamination in chemical mechanical polishing (CMP) processes. In some embodiments, the two-phase pad cleaning element comprises a first cleaning element and a second cleaning element configured to successively operate upon a section of a CMP polishing pad. The first cleaning element comprises a megasonic cleaning jet configured to utilize cavitation energy to dislodge particles embedded in the CMP polishing pad without damaging the surface of the polishing pad. The second cleaning element is configured to apply a high pressure mist, comprising two fluids, to remove by-products from the CMP polishing pad. By using megasonic cleaning to dislodge embedded particles a two-fluid mist to flush away by-products (e.g., including the dislodged embedded particles), the two-phase pad cleaning element enhances polishing pad cleaning.

    摘要翻译： 本公开内容涉及增强抛光垫清洁以防止晶片划伤和化学机械抛光（CMP）工艺中的污染的两相清洁元件。 在一些实施例中，两相垫清洁元件包括第一清洁元件和第二清洁元件，其被配置为在CMP抛光垫的一部分上连续操作。 第一清洁元件包括配置为利用空穴能量去除嵌入在CMP抛光垫中的颗粒而不损坏抛光垫的表面的兆声波清洗喷嘴。 第二清洁元件构造成施加包括两种流体的高压雾以从CMP抛光垫移除副产物。 通过使用兆声波清洗来移除嵌入式颗粒的双液雾以冲走副产物（例如，包括移出的嵌入颗粒），两相垫清洁元件增强了抛光垫清洁。

    Multiple Zone Temperature Control for CMP
    2.
    发明申请
    Multiple Zone Temperature Control for CMP 审中-公开
    多区域温度控制CMP

    公开(公告)号：US20130210173A1

    公开(公告)日：2013-08-15

    申请号：US13372872

    申请日：2012-02-14

    申请人： Jiann Lih Wu ,  Bo-I Lee ,  Soon Kang Huang ,  Chih-I Peng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    发明人： Jiann Lih Wu ,  Bo-I Lee ,  Soon Kang Huang ,  Chih-I Peng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC分类号： H01L21/66 ,  B24B49/00

    CPC分类号： H01L22/12 ,  B24B37/013 ,  B24B37/015 ,  B24B49/105 ,  B24B49/14 ,  H01L22/26

    摘要： To provide improved planarization, techniques in accordance with this disclosure include a CMP station that includes a plurality of concentric temperature control elements arranged over a number of concentric to-be-polished wafer surfaces. During polishing, a wafer surface planarity sensor monitors relative heights of the concentric to-be-polished wafer surfaces, and adjusts the temperatures of the concentric temperature control elements to provide an extremely well planarized wafer surface. Other systems and methods are also disclosed.

    摘要翻译： 为了提供改进的平面化，根据本公开的技术包括CMP站，其包括布置在多个同心待抛光晶片表面上的多个同心温度控制元件。 在抛光期间，晶片表面平面度传感器监测同心待抛光的晶片表面的相对高度，并且调节同心温度控制元件的温度以提供非常好的平坦化晶片表面。 还公开了其它系统和方法。

    CMP Groove Depth and Conditioning Disk Monitoring
    3.
    发明申请
    CMP Groove Depth and Conditioning Disk Monitoring 审中-公开
    CMP沟槽深度和调节盘监控

    公开(公告)号：US20130217306A1

    公开(公告)日：2013-08-22

    申请号：US13397845

    申请日：2012-02-16

    申请人： Jiann Lih Wu ,  Bo-I Lee ,  Soon Kang Huang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    发明人： Jiann Lih Wu ,  Bo-I Lee ,  Soon Kang Huang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC分类号： B24B49/16 ,  B24B49/18

    CPC分类号： B24B49/16 ,  B24B37/005 ,  B24B49/18

    摘要： Some embodiments relate to a chemical mechanical polishing (CMP) system. The CMP system includes a polishing pad having a polishing surface, and a wafer carrier to retain a wafer proximate to the polishing surface during polishing. A motor assembly rotates the polishing pad and concurrently rotates the wafer during polishing of the wafer. A conditioning disk has a conditioning surface that is in frictional engagement with the polishing surface during polishing. A torque measurement element measures a torque exerted by the motor assembly during polishing. A condition surface analyzer determines a surface condition of the conditioning surface or the polishing surface based on the measured torque. Other systems and methods are also disclosed.

    摘要翻译： 一些实施方案涉及化学机械抛光（CMP）系统。 CMP系统包括具有抛光表面的抛光垫和在抛光期间将晶片保持靠近抛光表面的晶片载体。 电机组件旋转抛光垫并在晶片抛光期间同时旋转晶片。 调理盘具有在抛光期间与抛光表面摩擦接合的调节表面。 扭矩测量元件测量在抛光期间由电动机组件施加的扭矩。 条件表面分析器基于测量的扭矩来确定调节表面或抛光表面的表面状态。 还公开了其它系统和方法。

    CMP Pad Cleaning Apparatus
    4.
    发明申请
    CMP Pad Cleaning Apparatus 有权
    CMP垫清洁装置

    公开(公告)号：US20130210323A1

    公开(公告)日：2013-08-15

    申请号：US13396854

    申请日：2012-02-15

    申请人： Jiann Lih Wu ,  Bo-I Lee ,  Soon Kang Huang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    发明人： Jiann Lih Wu ,  Bo-I Lee ,  Soon Kang Huang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC分类号： B24B1/00 ,  B24B41/06

    CPC分类号： B24B53/017

    摘要： The present disclosure relates to a two-phase cleaning element that enhances polishing pad cleaning so as to prevent wafer scratches and contamination in chemical mechanical polishing (CMP) processes. In some embodiments, the two-phase pad cleaning element comprises a first cleaning element and a second cleaning element configured to successively operate upon a section of a CMP polishing pad. The first cleaning element comprises a megasonic cleaning jet configured to utilize cavitation energy to dislodge particles embedded in the CMP polishing pad without damaging the surface of the polishing pad. The second cleaning element is configured to apply a high pressure mist, comprising two fluids, to remove by-products from the CMP polishing pad. By using megasonic cleaning to dislodge embedded particles a two-fluid mist to flush away by-products (e.g., including the dislodged embedded particles), the two-phase pad cleaning element enhances polishing pad cleaning.

    摘要翻译： 本公开内容涉及增强抛光垫清洁以防止晶片划伤和化学机械抛光（CMP）工艺中的污染的两相清洁元件。 在一些实施例中，两相垫清洁元件包括第一清洁元件和第二清洁元件，其被配置为在CMP抛光垫的一部分上连续操作。 第一清洁元件包括配置为利用空穴能量去除嵌入在CMP抛光垫中的颗粒而不损坏抛光垫的表面的兆声波清洗喷嘴。 第二清洁元件构造成施加包括两种流体的高压雾以从CMP抛光垫移除副产物。 通过使用兆声波清洗来移除嵌入式颗粒的双液雾以冲走副产物（例如，包括移出的嵌入颗粒），两相垫清洁元件增强了抛光垫清洁。

    METHOD AND APPARATUS FOR PERFORMING A POLISHING PROCESS IN SEMICONDUCTOR FABRICATION
    6.
    发明申请
    METHOD AND APPARATUS FOR PERFORMING A POLISHING PROCESS IN SEMICONDUCTOR FABRICATION 审中-公开
    用于在半导体制造中执行抛光工艺的方法和装置

    公开(公告)号：US20130078810A1

    公开(公告)日：2013-03-28

    申请号：US13240856

    申请日：2011-09-22

    申请人： Bo-I Lee ,  Huang Soon Kang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    发明人： Bo-I Lee ,  Huang Soon Kang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC分类号： H01L21/302 ,  B24B53/00 ,  B24B7/00

    CPC分类号： B24B37/32 ,  B24B9/065

    摘要： The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a polishing head that is operable to perform a polishing process to a wafer. The apparatus includes a retaining ring that is rotatably coupled to the polishing head. The retaining ring is operable to secure the wafer to be polished. The apparatus includes a soft material component located within the retaining ring. The soft material component is softer than silicon. The soft material component is operable to grind a bevel region of the wafer during the polishing process. The apparatus includes a spray nozzle that is rotatably coupled to the polishing head. The spray nozzle is operable to dispense a cleaning solution to the bevel region of the wafer during the polishing process.

    摘要翻译： 本公开提供了一种用于制造半导体器件的装置。 该装置包括可操作以对晶片执行抛光处理的抛光头。 该装置包括可旋转地联接到抛光头的保持环。 保持环可操作以固定要抛光的晶片。 该装置包括位于保持环内的软材料部件。 软材料组分比硅软。 柔性材料部件可操作以在抛光过程中研磨晶片的斜面区域。 该装置包括可旋转地联接到抛光头的喷嘴。 喷射喷嘴可操作以在抛光过程中将清洁溶液分配到晶片的斜面区域。

    Method and apparatus for performing a polishing process in semiconductor fabrication
    7.
    发明授权
    Method and apparatus for performing a polishing process in semiconductor fabrication 有权

    公开(公告)号：US10857649B2

    公开(公告)日：2020-12-08

    申请号：US13240856

    申请日：2011-09-22

    申请人： Bo-I Lee ,  Huang Soon Kang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    发明人： Bo-I Lee ,  Huang Soon Kang ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC分类号： B24B37/32 ,  B24B9/06

    摘要： The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a polishing head that is operable to perform a polishing process to a wafer. The apparatus includes a retaining ring that is rotatably coupled to the polishing head. The retaining ring is operable to secure the wafer to be polished. The apparatus includes a soft material component located within the retaining ring. The soft material component is softer than silicon. The soft material component is operable to grind a bevel region of the wafer during the polishing process. The apparatus includes a spray nozzle that is rotatably coupled to the polishing head. The spray nozzle is operable to dispense a cleaning solution to the bevel region of the wafer during the polishing process.

    Apparatus and Methods for Real-Time Error Detection in CMP Processing
    9.
    发明申请
    Apparatus and Methods for Real-Time Error Detection in CMP Processing 有权
    CMP处理中的实时误差检测装置与方法

    公开(公告)号：US20130044004A1

    公开(公告)日：2013-02-21

    申请号：US13211847

    申请日：2011-08-17

    申请人： James Jeng-Jyi Hwang ,  Bo-I Lee ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    发明人： James Jeng-Jyi Hwang ,  Bo-I Lee ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC分类号： G08B21/00 ,  H01L21/66 ,  B24B51/00

    CPC分类号： B24B37/005 ,  B24B37/042 ,  B24B37/107 ,  B24B49/003 ,  B24B49/10 ,  B24B49/14

    摘要： Methods and apparatus for detecting errors in real time in CMP processing. A method includes disposing a semiconductor wafer onto a wafer carrier in a tool for chemical mechanical polishing (“CMP”); positioning the wafer carrier so that a surface of the semiconductor wafer contacts a polishing pad mounted on a rotating platen; dispensing an abrasive slurry onto the rotating polishing pad while maintaining the surface of the semiconductor wafer in contact with the polishing pad to perform a CMP process on the semiconductor wafer; in real time, receiving signals from the CMP tool into a signal analyzer, the signals corresponding to vibration, acoustics, temperature, or pressure; and comparing the received signals from the CMP tool to expected received signals for normal processing by the CMP tool; outputting a result of the comparing. A CMP tool apparatus is disclosed.

    摘要翻译： 用于在CMP处理中实时检测误差的方法和装置。 一种方法包括将半导体晶片设置在用于化学机械抛光（CMP）的工具中的晶片载体上; 定位晶片载体，使得半导体晶片的表面接触安装在旋转台板上的抛光垫; 将研磨浆料分配到旋转的抛光垫上，同时保持半导体晶片的表面与抛光垫接触，以在半导体晶片上执行CMP处理; 实时地从CMP工具接收信号到信号分析仪，信号对应于振动，声学，温度或压力; 以及将来自CMP工具的接收信号与由CMP工具进行正常处理的预期接收信号进行比较; 输出比较结果。 公开了一种CMP工具装置。

    Methods for real-time error detection in CMP processing
    10.
    发明授权
    Methods for real-time error detection in CMP processing 有权
    CMP处理中的实时错误检测方法

    公开(公告)号：US09403254B2

    公开(公告)日：2016-08-02

    申请号：US13211847

    申请日：2011-08-17

    申请人： James Jeng-Jyi Hwang ,  Bo-I Lee ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    发明人： James Jeng-Jyi Hwang ,  Bo-I Lee ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC分类号： B24B37/005 ,  B24B37/04 ,  B24B37/10 ,  B24B49/00 ,  B24B49/10 ,  B24B49/14

    CPC分类号： B24B37/005 ,  B24B37/042 ,  B24B37/107 ,  B24B49/003 ,  B24B49/10 ,  B24B49/14

    摘要： Methods and apparatus for detecting errors in real time in CMP processing. A method includes disposing a semiconductor wafer onto a wafer carrier in a tool for chemical mechanical polishing (“CMP”); positioning the wafer carrier so that a surface of the semiconductor wafer contacts a polishing pad mounted on a rotating platen; dispensing an abrasive slurry onto the rotating polishing pad while maintaining the surface of the semiconductor wafer in contact with the polishing pad to perform a CMP process on the semiconductor wafer; in real time, receiving signals from the CMP tool into a signal analyzer, the signals corresponding to vibration, acoustics, temperature, or pressure; and comparing the received signals from the CMP tool to expected received signals for normal processing by the CMP tool; outputting a result of the comparing. A CMP tool apparatus is disclosed.

    摘要翻译： 用于在CMP处理中实时检测误差的方法和装置。 一种方法包括将半导体晶片设置在用于化学机械抛光（“CMP”）的工具中的晶片载体上; 定位晶片载体，使得半导体晶片的表面接触安装在旋转台板上的抛光垫; 将研磨浆料分配到旋转的抛光垫上，同时保持半导体晶片的表面与抛光垫接触，以在半导体晶片上执行CMP处理; 实时地从CMP工具接收信号到信号分析仪，信号对应于振动，声学，温度或压力; 以及将来自CMP工具的接收信号与由CMP工具进行正常处理的预期接收信号进行比较; 输出比较结果。 公开了一种CMP工具装置。