公开(公告)号：US20130084706A1

公开(公告)日：2013-04-04

申请号：US13249418

申请日：2011-09-30

申请人： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L.G. Ventzek

发明人： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L.G. Ventzek

IPC分类号： H01L21/311 ,  H01L21/3065

CPC分类号： H01J37/3222 ,  H01J37/32256 ,  H01J37/32293

摘要： The invention provides a plurality of Surface Wave Antenna (SWA) plasma sources. The SWA plasma sources can comprise one or more non-circular slot antennas, each having a plurality of plasma-tuning rods extending therethrough. Some of the plasma tuning rods can be configured to couple the electromagnetic (EM) energy from one or more of the non-circular slot antennas to the process space within the process chamber. The invention also provides SWA plasma sources that can comprise a plurality of resonant cavities, each having one or more plasma-tuning rods extending therefrom. Some of the plasma tuning rods can be configured to couple the EM energy from one or more of the resonant cavities to the process space within the process chamber.

摘要翻译： 本发明提供了多个表面波天线（SWA）等离子体源。 SWA等离子体源可以包括一个或多个非圆形缝隙天线，每个天线具有延伸穿过其中的多个等离子体调谐杆。 一些等离子体调谐杆可以被配置为将来自一个或多个非圆形缝隙天线的电磁（EM）能量耦合到处理室内的处理空间。 本发明还提供了可以包括多个谐振腔的SWA等离子体源，每个谐振腔具有从其延伸的一个或多个等离子体调谐杆。 等离子体调谐杆中的一些可以被配置为将来自一个或多个谐振腔的EM能量耦合到处理室内的处理空间。

公开(公告)号：US20130082030A1

公开(公告)日：2013-04-04

申请号：US13249560

申请日：2011-09-30

申请人： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L.G. Ventzek

发明人： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L.G. Ventzek

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H01J37/32256 ,  H01J37/32247 ,  H01J37/32935 ,  H01L22/00

摘要： The invention provides a plurality of resonator subsystems. The resonator subsystems can comprise one or more resonant cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to plasma by generating resonant microwave energy in a resonant cavity adjacent the plasma. The resonator subsystem can be coupled to a process chamber using one or more interface subsystems and can comprise one or more resonant cavities, and each resonant cavity can have a plurality of plasma tuning rods coupled thereto. Some of the plasma tuning rods can be configured to couple the EM-energy from one or more of the resonant cavities to the process space within the process chamber.

摘要翻译： 本发明提供了多个谐振器子系统。 谐振器子系统可以包括一个或多个谐振腔，其被配置为通过在与等离子体相邻的谐振腔中产生谐振微波能量将所期望的EM波模式中的电磁（EM）能量耦合到等离子体。 谐振器子系统可以使用一个或多个接口子系统耦合到处理室，并且可以包括一个或多个谐振腔，并且每个谐振腔可以具有耦合到其上的多个等离子体调谐棒。 一些等离子体调谐杆可被配置成将EM能量从一个或多个谐振腔耦合到处理室内的处理空间。

公开(公告)号：US20130081762A1

公开(公告)日：2013-04-04

申请号：US13249485

申请日：2011-09-30

申请人： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L.G. Ventzek

发明人： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L.G. Ventzek

IPC分类号： C23F1/08 ,  H05K13/00 ,  C23C16/511

CPC分类号： H01J37/32192 ,  H01J37/32247 ,  H01J37/32256 ,  Y10T29/49002

摘要： The invention provides a plurality of plasma tuning rod subsystems. The plasma tuning rod subsystems can comprise one or more microwave cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to a plasma by generating resonant microwave energy in one or more plasma tuning rods within and/or adjacent to the plasma. One or more microwave cavity assemblies can be coupled to a process chamber, and can comprise one or more tuning spaces/cavities. Each tuning space/cavity can have one or more plasma tuning rods coupled thereto. Some of the plasma tuning rods can be configured to couple the EM energy from one or more of the resonant cavities to the process space within the process chamber and thereby create uniform plasma within the process space.

摘要翻译： 本发明提供了多个等离子体调谐棒子系统。 等离子体调谐杆子系统可以包括一个或多个微波空腔，其被配置为通过在等离子体内和/或邻近等离子体中的一个或多个等离子体调谐杆中产生共振微波能量将所期望的EM波模式中的电磁（EM）能量耦合到等离子体。 一个或多个微波空腔组件可以耦合到处理室，并且可以包括一个或多个调谐空间/空腔。 每个调谐空间/空腔可以具有耦合到其上的一个或多个等离子体调谐杆。 等离子体调谐棒中的一些可被配置为将EM能量从一个或多个谐振腔耦合到处理室内的处理空间，从而在工艺空间内产生均匀的等离子体。

公开(公告)号：US09111727B2

公开(公告)日：2015-08-18

申请号：US13249560

申请日：2011-09-30

申请人： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L.G. Ventzek

发明人： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L.G. Ventzek

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32256 ,  H01J37/32247 ,  H01J37/32935 ,  H01L22/00

摘要： The invention provides a plurality of resonator subsystems. The resonator subsystems can comprise one or more resonant cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to plasma by generating resonant microwave energy in a resonant cavity adjacent the plasma. The resonator subsystem can be coupled to a process chamber using one or more interface subsystems and can comprise one or more resonant cavities, and each resonant cavity can have a plurality of plasma tuning rods coupled thereto. Some of the plasma tuning rods can be configured to couple the EM-energy from one or more of the resonant cavities to the process space within the process chamber.

摘要翻译： 本发明提供了多个谐振器子系统。 谐振器子系统可以包括一个或多个谐振腔，其被配置为通过在与等离子体相邻的谐振腔中产生谐振微波能量将所期望的EM波模式中的电磁（EM）能量耦合到等离子体。 谐振器子系统可以使用一个或多个接口子系统耦合到处理室，并且可以包括一个或多个谐振腔，并且每个谐振腔可以具有耦合到其上的多个等离子体调谐棒。 一些等离子体调谐杆可被配置成将EM能量从一个或多个谐振腔耦合到处理室内的处理空间。

公开(公告)号：US08808496B2

公开(公告)日：2014-08-19

申请号：US13249485

申请日：2011-09-30

申请人： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L. G. Ventzek

发明人： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L. G. Ventzek

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32192 ,  H01J37/32247 ,  H01J37/32256 ,  Y10T29/49002

摘要： The invention provides a plurality of plasma tuning rod subsystems. The plasma tuning rod subsystems can comprise one or more microwave cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to a plasma by generating resonant microwave energy in one or more plasma tuning rods within and/or adjacent to the plasma. One or more microwave cavity assemblies can be coupled to a process chamber, and can comprise one or more tuning spaces/cavities. Each tuning space/cavity can have one or more plasma tuning rods coupled thereto. Some of the plasma tuning rods can be configured to couple the EM energy from one or more of the resonant cavities to the process space within the process chamber and thereby create uniform plasma within the process space.

摘要翻译： 本发明提供了多个等离子体调谐棒子系统。 等离子体调谐杆子系统可以包括一个或多个微波空腔，其被配置为通过在等离子体内和/或邻近等离子体中的一个或多个等离子体调谐杆中产生共振微波能量将所期望的EM波模式中的电磁（EM）能量耦合到等离子体。 一个或多个微波空腔组件可以耦合到处理室，并且可以包括一个或多个调谐空间/空腔。 每个调谐空间/空腔可以具有耦合到其上的一个或多个等离子体调谐杆。 等离子体调谐棒中的一些可被配置为将EM能量从一个或多个谐振腔耦合到处理室内的处理空间，从而在工艺空间内产生均匀的等离子体。

公开(公告)号：US10370763B2

公开(公告)日：2019-08-06

申请号：US15131409

申请日：2016-04-18

申请人： Takahiro Hirano ,  Toshihiko Iwao ,  Takaaki Kato

发明人： Takahiro Hirano ,  Toshihiko Iwao ,  Takaaki Kato

IPC分类号： C23C16/511 ,  H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458

摘要： Disclosed is a plasma processing apparatus that processes a processing target substrate using microwave plasma within a processing container. The plasma processing apparatus includes a placing table provided in the processing container, and configured to place the processing target substrate thereon; and an antenna provided above the placing table to face the placing table, and including a dielectric plate, the antenna being configured to radiate microwaves into the processing container through the dielectric plate to generate plasma of a processing gas supplied into the processing container. The dielectric plate includes a flat plate portion provided on a bottom surface of the antenna, and formed in a flat shape at least on a surface facing the placing table; and a rib formed on a surface of the flat plate portion that is opposite to the surface facing the placing table.

公开(公告)号：US20170298514A1

公开(公告)日：2017-10-19

申请号：US15131409

申请日：2016-04-18

申请人： Takahiro Hirano ,  Toshihiko Iwao ,  Takaaki Kato

发明人： Takahiro Hirano ,  Toshihiko Iwao ,  Takaaki Kato

IPC分类号： C23C16/511 ,  C23C16/458 ,  C23C16/455

CPC分类号： C23C16/511 ,  C23C16/4404 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/4584 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/32899

摘要： Disclosed is a plasma processing apparatus that processes a processing target substrate using microwave plasma within a processing container. The plasma processing apparatus includes a placing table provided in the processing container, and configured to place the processing target substrate thereon; and an antenna provided above the placing table to face the placing table, and including a dielectric plate, the antenna being configured to radiate microwaves into the processing container through the dielectric plate to generate plasma of a processing gas supplied into the processing container. The dielectric plate includes a flat plate portion provided on a bottom surface of the antenna, and formed in a flat shape at least on a surface facing the placing table; and a rib formed on a surface of the flat plate portion that is opposite to the surface facing the placing table.