公开(公告)号：US08586964B2

公开(公告)日：2013-11-19

申请号：US12911560

申请日：2010-10-25

申请人： Jin-Dong Song ,  Sang Hoon Shin ,  Hyung-jun Kim ,  Hyun Cheol Koo ,  Suk Hee Han ,  Joonyeon Chang

发明人： Jin-Dong Song ,  Sang Hoon Shin ,  Hyung-jun Kim ,  Hyun Cheol Koo ,  Suk Hee Han ,  Joonyeon Chang

IPC分类号： H01L29/15

CPC分类号： H01L29/7783 ,  B82Y10/00 ,  H01L29/122

摘要： Disclosed herein are a method of generating a two-dimensional hole gas (2DHG) using a type-2 quantum well formed using semiconductors with different electron affinities or band gap, and a high-speed p-type semiconductor device using the 2DHG. To this end, the method includes providing a semiconductor substrate; growing a first semiconductor layer on the semiconductor substrate, growing a second semiconductor layer with a different electron affinity or band gap from the first semiconductor layer on the first semiconductor layer, and growing a third semiconductor layer with a different electron affinity or band gap from the second semiconductor layer, thereby forming a type-2 quantum well; and forming a p-type doping layer in the vicinity of the type-2 quantum well, thereby generating the 2DHG.

摘要翻译： 本文公开了使用具有不同电子亲和性或带隙的半导体形成的2型量子阱和使用该2DHG的高速p型半导体器件来生成二维空穴气体（2DHG）的方法。 为此，该方法包括提供半导体衬底; 在所述半导体衬底上生长第一半导体层，在所述第一半导体层上生长具有与所述第一半导体层不同的电子亲和性或带隙的第二半导体层，以及生长具有与所述第一半导体层不同的电子亲和性或带隙的第三半导体层 第二半导体层，从而形成2型量子阱; 并在2型量子阱附近形成p型掺杂层，从而生成2DHG。

公开(公告)号：US20120007045A1

公开(公告)日：2012-01-12

申请号：US12911560

申请日：2010-10-25

申请人： JIN-DONG SONG ,  Sang Hoon Shin ,  Hyung-jun Kim ,  Hyun Cheol Koo ,  Suk Hee Han ,  Joonyeon Chang

发明人： JIN-DONG SONG ,  Sang Hoon Shin ,  Hyung-jun Kim ,  Hyun Cheol Koo ,  Suk Hee Han ,  Joonyeon Chang

IPC分类号： H01L29/15 ,  H01L21/20

CPC分类号： H01L29/7783 ,  B82Y10/00 ,  H01L29/122

摘要： Disclosed herein are a method of generating a two-dimensional hole gas (2DHG) using a type-2 quantum well formed using semiconductors with different electron affinities or band gap, and a high-speed p-type semiconductor device using the 2DHG. To this end, the method includes providing a semiconductor substrate; growing a first semiconductor layer on the semiconductor substrate, growing a second semiconductor layer with a different electron affinity or band gap from the first semiconductor layer on the first semiconductor layer, and growing a third semiconductor layer with a different electron affinity or band gap from the second semiconductor layer, thereby forming a type-2 quantum well; and forming a p-type doping layer in the vicinity of the type-2 quantum well, thereby generating the 2DHG.

摘要翻译： 本文公开了使用具有不同电子亲和性或带隙的半导体形成的2型量子阱和使用该2DHG的高速p型半导体器件来生成二维空穴气体（2DHG）的方法。 为此，该方法包括提供半导体衬底; 在所述半导体衬底上生长第一半导体层，在所述第一半导体层上生长具有与所述第一半导体层不同的电子亲和性或带隙的第二半导体层，以及生长具有与所述第一半导体层不同的电子亲和性或带隙的第三半导体层 第二半导体层，从而形成2型量子阱; 并在2型量子阱附近形成p型掺杂层，从而生成2DHG。

公开(公告)号：US08237236B2

公开(公告)日：2012-08-07

申请号：US12762839

申请日：2010-04-19

申请人： Jin Dong Song ,  Sung Jung Joo ,  Jin Ki Hong ,  Sang Hoon Shin ,  Kyung Ho Shin ,  Tae Yueb Kim ,  Ju Young Lim ,  Jin Seo Lee ,  Kung Won Rhie

发明人： Jin Dong Song ,  Sung Jung Joo ,  Jin Ki Hong ,  Sang Hoon Shin ,  Kyung Ho Shin ,  Tae Yueb Kim ,  Ju Young Lim ,  Jin Seo Lee ,  Kung Won Rhie

IPC分类号： H01L29/82

CPC分类号： H01L29/82

摘要： An InSb-based switching device, which operates at room temperature by using a magnetic field controlled avalanche process for applying to magneto-logic elements, is provided. A switching device of one embodiment includes a p-type semiconductor layer; an n-type semiconductor layer; and contact layers disposed on one of the p-type and n-type semiconductor layers, the p-type semiconductor layer being in contact with the n-type semiconductor layer such that a current can be applied through the contact layers to the p-type and n-type semiconductor layers to cause a current flow from one of the contact layers to the p-type and n-type semiconductor layers and from the p-type and n-type semiconductor layers to the other of the contact layers, whereby the current flow can be controlled by an intensity of a magnetic field applied to the p-type and n-type semiconductor layers substantially perpendicularly thereto.

摘要翻译： 提供了一种基于InSb的开关装置，其通过使用用于应用于磁逻辑元件的磁场控制雪崩处理在室温下操作。 一个实施例的开关器件包括p型半导体层; n型半导体层; 以及设置在p型和n型半导体层中的一个上的接触层，p型半导体层与n型半导体层接触，使得可以通过接触层将电流施加到p型 和n型半导体层，以使电流从一个接触层流向p型和n型半导体层，并从p型和n型半导体层到另一个接触层，由此， 可以通过施加到基本垂直于其的p型和n型半导体层的磁场的强度来控制电流。

公开(公告)号：US20100308378A1

公开(公告)日：2010-12-09

申请号：US12762839

申请日：2010-04-19

申请人： Jin Dong Song ,  Sung Jung Joo ,  Jin Ki Hong ,  Sang Hoon Shin ,  Kyung Ho Shin ,  Tae Yueb Kim ,  Ju Young Lim ,  Jin Seo Lee ,  Kung Won Rhie

发明人： Jin Dong Song ,  Sung Jung Joo ,  Jin Ki Hong ,  Sang Hoon Shin ,  Kyung Ho Shin ,  Tae Yueb Kim ,  Ju Young Lim ,  Jin Seo Lee ,  Kung Won Rhie

IPC分类号： H01L29/82

CPC分类号： H01L29/82

摘要： The present invention provides an InSb-based switching device operating at room temperature by using a magnetic field controlled avalanche process for applying to magneto-logic elements. A switching device of one embodiment includes a p-type semiconductor layer; an n-type semiconductor layer; and contact layers disposed on one of the p-type and n-type semiconductor layers, the p-type semiconductor layer being in contact with the n-type semiconductor layer such that a current can be applied through the contact layers to the p-type and n-type semiconductor layers to cause a current flow from one of the contact layers to the p-type and n-type semiconductor layers and from the p-type and n-type semiconductor layers to the other of the contact layers, whereby the current flow can be controlled by an intensity of a magnetic field applied to the p-type and n-type semiconductor layers substantially perpendicularly thereto.

摘要翻译： 本发明提供一种基于InSb的开关装置，其通过使用用于施加到磁逻辑元件的磁场控制雪崩处理在室温下工作。 一个实施例的开关器件包括p型半导体层; n型半导体层; 以及设置在p型和n型半导体层中的一个上的接触层，p型半导体层与n型半导体层接触，使得可以通过接触层将电流施加到p型 和n型半导体层，以使电流从一个接触层流向p型和n型半导体层，并从p型和n型半导体层到另一个接触层，由此， 可以通过施加到基本垂直于其的p型和n型半导体层的磁场的强度来控制电流。

公开(公告)号：US20110156034A1

公开(公告)日：2011-06-30

申请号：US12840231

申请日：2010-07-20

申请人： Xiang Hua Cui ,  Jeong Woo Lee ,  Sang Hoon Shin

发明人： Xiang Hua Cui ,  Jeong Woo Lee ,  Sang Hoon Shin

IPC分类号： H01L23/522 ,  H01L21/66

CPC分类号： G11C29/702

摘要： A repair circuit of a semiconductor apparatus includes a plurality of through-silicon vias including repeated sets of one repair through-silicon via and an M number of normal through-silicon vias; a transmission unit configured to multiplex input data at a first multiplexing rate based on control signals, and transmit the multiplexed data to the plurality of through-silicon vias; a reception unit configured to multiplex signals transmitted through the plurality of through-silicon vias at a second multiplexing rate based on the control signals, and generate output data; and a control signal generation unit configured to generate sets of the control signals based on an input number of a test signal.

摘要翻译： 半导体装置的修复电路包括多个穿硅通孔，包括重复的一组修复通硅通孔和M个通常的硅通孔; 传输单元，被配置为基于控制信号以第一多路复用速率复用输入数据，并将多路复用数据发送到多个通孔通孔; 接收单元，被配置为基于所述控制信号以第二多路复用速率复用通过所述多个穿硅通孔传输的信号，并生成输出数据; 以及控制信号生成单元，被配置为基于测试信号的输入号码生成控制信号的集合。

公开(公告)号：US07778089B2

公开(公告)日：2010-08-17

申请号：US11775313

申请日：2007-07-10

申请人： Sang Hoon Shin ,  Seung Wook Kwack

发明人： Sang Hoon Shin ,  Seung Wook Kwack

IPC分类号： G11C7/10

CPC分类号： G11C7/1078 ,  G11C7/1048 ,  G11C7/1087 ,  G11C7/1096 ,  G11C7/18

摘要： A write driver control circuit controls operations of a write driver, which amplifies and transmits data of a pair of global input/output lines to a pair of local input/output lines in a write operation. A single type latch section compares states of first and second data of the pair of global input/output lines differentially inputted in a first status and then outputs a first output signal to a first output node; compares states of the first and second data differentially inputted in a second status and then outputs a second output signal to a second output node; and continuously latches states of the first and second output nodes before a precharge operation starts. A precharge controller equalizes and precharges the first and second output nodes in the precharge operation. An output section outputs first and second driver signals and first and second latch signals to control the write driver.

摘要翻译： 写入驱动器控制电路控制写入驱动器的操作，该写入驱动器在写入操作中将一对全局输入/输出线的数据放大并发送到一对本地输入/输出线。 单个类型的锁存部分比较在第一状态中差分地输入的一对全局输入/输出线的第一和第二数据的状态，然后将第一输出信号输出到第一输出节点; 比较在第二状态下差分输入的第一和第二数据的状态，然后将第二输出信号输出到第二输出节点; 并且在预充电操作开始之前连续锁存第一和第二输出节点的状态。 预充电控制器在预充电操作中对第一和第二输出节点进行均衡和预充电。 输出部分输出第一和第二驱动器信号以及第一和第二锁存信号以控制写入驱动器。

公开(公告)号：US08817566B2

公开(公告)日：2014-08-26

申请号：US13340868

申请日：2011-12-30

申请人： Sang Hoon Shin ,  Hyung Dong Lee ,  Jeong Woo Lee ,  Young Suk Moon

发明人： Sang Hoon Shin ,  Hyung Dong Lee ,  Jeong Woo Lee ,  Young Suk Moon

IPC分类号： G11C7/00 ,  G11C11/406

CPC分类号： G11C11/40603 ,  G11C11/40611 ,  G11C11/40615

摘要： A memory system includes: a controller configured to provide a hidden auto refresh command; and a memory configured to perform a refresh operation in response to the hidden auto refresh command. The controller and the memory communicate with each other so that each refresh address of the controller and the memory has the same value as each other.

摘要翻译： 存储器系统包括：控制器，被配置为提供隐藏的自动刷新命令; 以及被配置为响应于所述隐藏的自动刷新命令执行刷新操作的存储器。 控制器和存储器彼此通信，使得控制器和存储器的每个刷新地址彼此具有相同的值。

公开(公告)号：US07911875B2

公开(公告)日：2011-03-22

申请号：US12345199

申请日：2008-12-29

申请人： Sang Hoon Shin ,  Won Jun Choi

发明人： Sang Hoon Shin ,  Won Jun Choi

IPC分类号： G11C8/00

CPC分类号： G11C29/20 ,  G11C8/04

摘要： An address counting circuit includes a counter configured to sequentially count from an initial address in response to a clock signal in order to output counted addresses. The address counting circuit also includes a code conversion unit that is configured to output converted addresses such that only one address bit of the converted addresses with respect to the previous converted addresses are toggled to output the converted addresses. The converted addresses output form the code conversion unit do not overlap with one another.

摘要翻译： 地址计数电路包括被配置为响应于时钟信号从初始地址顺序计数以计数地址的计数器。 地址计数电路还包括代码转换单元，其被配置为输出转换的地址，使得相对于先前转换的地址仅转换地址的一个地址位被切换以输出转换的地址。 从代码转换单元输出的转换地址不会彼此重叠。

公开(公告)号：US20070167855A1

公开(公告)日：2007-07-19

申请号：US11603015

申请日：2006-11-22

申请人： Sang Hoon Shin ,  Sun Gi Hong ,  Kyung Ho Kim ,  Wan Taek Han

发明人： Sang Hoon Shin ,  Sun Gi Hong ,  Kyung Ho Kim ,  Wan Taek Han

IPC分类号： A61B5/08

CPC分类号： A61B5/08 ,  A61B5/0878 ,  A61B5/486 ,  A61B5/7405 ,  A61B5/742 ,  A61B7/003

摘要： A system, medium, and method conducing a user's breathing, in which a sound generated during a user's exhale and/or an ambient temperature change occurring during the exhale is sensed to measure a respiratory waveform of the user. Respiratory information of the user may then be produced from the respiratory waveform, and when the respiratory information of the user is different from normal respiratory information of the user, breathing information according to the normal respiratory information may be provided to the user so the user can use the same to modify their breathing.

摘要翻译： 感测用户呼吸期间产生的声音和/或在呼出期间发生的环境温度变化的声音的系统，介质和方法，以测量用户的呼吸波形。 然后可以从呼吸波形产生用户的呼吸信息，并且当用户的呼吸信息不同于用户的正常呼吸信息时，可以向用户提供根据正常呼吸信息的呼吸信息，以便用户可以 使用相同的方式修改呼吸。

公开(公告)号：US08491489B2

公开(公告)日：2013-07-23

申请号：US11603015

申请日：2006-11-22

申请人： Sang Hoon Shin ,  Sun Gi Hong ,  Kyung Ho Kim ,  Wan Taek Han

发明人： Sang Hoon Shin ,  Sun Gi Hong ,  Kyung Ho Kim ,  Wan Taek Han

IPC分类号： A61B5/08

CPC分类号： A61B5/08 ,  A61B5/0878 ,  A61B5/486 ,  A61B5/7405 ,  A61B5/742 ,  A61B7/003

摘要： A system, medium, and method conducing a user's breathing, in which a sound generated during a user's exhale and/or an ambient temperature change occurring during the exhale is sensed to measure a respiratory waveform of the user. Respiratory information of the user may then be produced from the respiratory waveform, and when the respiratory information of the user is different from normal respiratory information of the user, breathing information according to the normal respiratory information may be provided to the user so the user can use the same to modify their breathing.

摘要翻译： 感测用户呼吸期间产生的声音和/或在呼出期间发生的环境温度变化的声音的系统，介质和方法，以测量用户的呼吸波形。 然后可以从呼吸波形产生用户的呼吸信息，并且当用户的呼吸信息不同于用户的正常呼吸信息时，可以向用户提供根据正常呼吸信息的呼吸信息，以便用户可以 使用相同的方式修改呼吸。