公开(公告)号：US06429082B1

公开(公告)日：2002-08-06

申请号：US09684118

申请日：2000-10-06

申请人： Jin-Tau Chou ,  Chung-Chiang Lin ,  Chih-Jen Huang

发明人： Jin-Tau Chou ,  Chung-Chiang Lin ,  Chih-Jen Huang

IPC分类号： H01L21265

CPC分类号： H01L29/6659 ,  H01L21/2652 ,  H01L21/26586

摘要： A method of manufacturing a high voltage device is described. A well region is formed within a substrate of a high voltage device region. A gate structure is made up of a gate oxide layer, a gate and an optional cap layer that are sequentially formed upon the well. Subsequently, using the gate structure as a mask, a large tilt angle light doping process is performed on the well of the high voltage device region of the well, thereby forming a lightly doped source and drain region. Thereupon, a optional thermal drive-in procedure is performed. Next, a spacer is formed on the side of the gate structure. Using the spacer and the gate structure as a mask, a heavy doping self-aligned ion implantation process is performed on the active region of the well, thereby forming a heavily doped source and drain region.

摘要翻译： 对高压装置的制造方法进行说明。 在高电压器件区域的衬底内形成阱区。 栅极结构由顺序地形成在阱上的栅极氧化物层，栅极和可选的覆盖层构成。 随后，使用栅极结构作为掩模，对阱的高压器件区域的阱执行大的倾斜角度的掺杂工艺，从而形成轻掺杂的源极和漏极区域。 因此，执行可选的热驱动程序。 接下来，在栅极结构侧形成间隔物。 使用间隔物和栅极结构作为掩模，对阱的有源区域进行重掺杂自对准离子注入工艺，由此形成重掺杂的源极和漏极区域。

公开(公告)号：US08533059B2

公开(公告)日：2013-09-10

申请号：US13569007

申请日：2012-08-07

申请人： Vishay S. Nihalani ,  Diwakar Gupta ,  Chih-Jen Huang ,  Philip Yuen ,  Howard B. Gefen ,  Gerald Yuen

发明人： Vishay S. Nihalani ,  Diwakar Gupta ,  Chih-Jen Huang ,  Philip Yuen ,  Howard B. Gefen ,  Gerald Yuen

IPC分类号： G06Q30/00

CPC分类号： G06Q30/0633 ,  G06Q30/02 ,  G06Q30/0601

摘要： Various embodiments of a system and method for message-based purchasing are described. The system and method for message-based purchasing may include a message-based purchase service configured to determine that a selection has been performed through a network-based interface. Such selection may be indicative of one or more items offered for sale via the network-based interface. The message-based purchase service may be configured to, in response to the selection of one or more items, send to a communication device, a message indicating a code corresponding to the selection. The message-based purchase service may receive from the communication device through a communication channel that does not include the network-based interface, a message including the code. The message-based purchase service may be configured to, in response to determining that the message received from the communication device includes the code, generate a purchase request for the one or more previously selected items.

摘要翻译： 描述用于基于消息的购买的系统和方法的各种实施例。 用于基于消息的购买的系统和方法可以包括被配置为确定已经通过基于网络的接口执行了选择的基于消息的购买服务。 这样的选择可以指示通过基于网络的接口提供出售的一个或多个物品。 基于消息的购买服务可以被配置为响应于对一个或多个项目的选择，向通信设备发送指示对应于该选择的代码的消息。 基于消息的购买服务可以通过不包括基于网络的接口的通信信道从通信设备接收包括代码的消息。 基于消息的购买服务可以被配置为响应于确定从通信设备接收到的消息包括代码，为一个或多个先前选择的项产生购买请求。

公开(公告)号：US08255288B1

公开(公告)日：2012-08-28

申请号：US12364677

申请日：2009-02-03

申请人： Diwakar Gupta ,  Paul C. Schattauer ,  Chih-Jen Huang ,  Philip Yuen ,  Ammar Chinoy ,  Kiran Kumar Meduri

发明人： Diwakar Gupta ,  Paul C. Schattauer ,  Chih-Jen Huang ,  Philip Yuen ,  Ammar Chinoy ,  Kiran Kumar Meduri

IPC分类号： G06Q30/00

CPC分类号： G06Q30/06

摘要： Item scarcity resulting from a high demand of the item is addressed by providing users a high demand sale process. In some aspects, users may opt-in to purchase the item in a sale by transmitting a mobile message to a host over a mobile device network prior to a sale of the item. If the user is eligible, the host then attempts to purchase the item on behalf of the user once the sale begins.

摘要翻译： 由于对该项目的高需求导致的项目缺乏是通过为用户提供高需求的销售流程来解决的。 在某些方面，用户可以在销售商品之前通过在移动设备网络上向主机发送移动消息来选择在销售中购买该商品。 如果用户符合资格，则主机随后尝试在销售开始后代表用户购买该商品。

公开(公告)号：US07719076B2

公开(公告)日：2010-05-18

申请号：US11836788

申请日：2007-08-10

申请人： Shih-Ming Shu ,  Chih-Jen Huang ,  Tun-Jen Cheng ,  Chao-Yuan Su

发明人： Shih-Ming Shu ,  Chih-Jen Huang ,  Tun-Jen Cheng ,  Chao-Yuan Su

IPC分类号： H01L29/86

CPC分类号： H01L29/7835 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/42368

摘要： A HV MOS transistor device having a substrate, a gate, a source, a drain, a first ion well of a first conductive type disposed in the substrate, and a plurality of field plates disposed on the substrate is disclosed. The HV MOS transistor device further has a first doped region of a second conductive type positioned in the first ion well. Therefore, a first interface and a second interface between the first ion well and the first doped region are formed, and the first interface and the second interface are respectively positioned near the drain and the source. In addition, the first interface is positioned under a respective field plate to produce a smooth field distribution and to increase the breakdown voltage of the HV transistor device.

摘要翻译： 公开了一种HV MOS晶体管器件，其具有衬底，栅极，源极，漏极，设置在衬底中的第一导电类型的第一离子阱以及设置在衬底上的多个场板。 HV MOS晶体管器件还具有位于第一离子阱中的第二导电类型的第一掺杂区域。 因此，形成第一离子阱和第一掺杂区之间的第一界面和第二界面，并且第一界面和第二界面分别位于漏极和源附近。 此外，第一接口位于相应的场板下方以产生平滑的场分布并增加HV晶体管器件的击穿电压。

公开(公告)号：US20090039424A1

公开(公告)日：2009-02-12

申请号：US11836785

申请日：2007-08-10

申请人： Chao-Yuan Su ,  Wei-Lun Hsu ,  Ching-Ming Lee ,  Chih-Jen Huang ,  Te-Yuan Wu ,  Chun-Hsiung Peng

发明人： Chao-Yuan Su ,  Wei-Lun Hsu ,  Ching-Ming Lee ,  Chih-Jen Huang ,  Te-Yuan Wu ,  Chun-Hsiung Peng

IPC分类号： H01L29/78

CPC分类号： H01L29/7835 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/404 ,  H01L29/42368

摘要： A high-voltage transistor device has a substrate, an isolation structure, a source, a gate, a drain, a plurality of doped regions, a plurality of ion wells, and a first dielectric layer disposed on the substrate. The high-voltage transistor device further has a first conductive layer and a plurality of first field plate rings. The first conductive layer is electrically connected to the drain and at least one of the first field plate rings.

摘要翻译： 高压晶体管器件具有衬底，隔离结构，源极，栅极，漏极，多个掺杂区域，多个离子阱以及设置在衬底上的第一介电层。 高压晶体管器件还具有第一导电层和多个第一场板环。 第一导电层电连接到漏极和至少一个第一场板环。

公开(公告)号：US20070107044A1

公开(公告)日：2007-05-10

申请号：US11546030

申请日：2006-10-10

申请人： Philip Yuen ,  Chih-Jen Huang ,  Gerald Yuen

发明人： Philip Yuen ,  Chih-Jen Huang ,  Gerald Yuen

IPC分类号： H04L9/32

CPC分类号： H04L63/18 ,  G06Q20/40 ,  G06Q20/425

摘要： System and method for authorizing transactions, such as payments or money transfers. A transaction authorization mechanism may be provided through which a transaction initiated via a first communications channel may be authorized through a second, separate communications channel or mechanism. A source entity may initiate a transaction to a target entity via a first communications channel to a transaction authorization service. The transaction authorization service may confirm the transaction with the source entity via a second communications channel. Various embodiments may use different communications channels, for example conventional telephone systems, mobile/cellular phone systems, and text messaging systems as the first or second communications channels. After the transaction has been authorized via the second communications channel, the transaction authorization service and/or the source entity may contact the target entity to inform the target entity of the transaction. The target entity may then complete the transaction.

摘要翻译： 授权交易的系统和方法，如付款或汇款。 可以提供交易授权机制，通过该交易授权机制可以经由第二通信信道或机制授权通过第一通信信道发起的交易。 源实体可以经由到交易授权服务的第一通信信道向目标实体发起交易。 交易授权服务可以经由第二通信信道确认与源实体的交易。 各种实施例可以使用不同的通信信道，例如常规电话系统，移动/蜂窝电话系统和文本消息系统作为第一或第二通信信道。 在通过第二通信信道授权交易之后，交易授权服务和/或源实体可以联系目标实体以通知目标实体交易。 目标实体可以完成交易。

公开(公告)号：US20070073691A1

公开(公告)日：2007-03-29

申请号：US11263003

申请日：2005-10-31

申请人： Patrick Conlan ,  Aaron Jensen ,  Chih-Jen Huang ,  Robert Turner

发明人： Patrick Conlan ,  Aaron Jensen ,  Chih-Jen Huang ,  Robert Turner

IPC分类号： G06F7/00

CPC分类号： G06F21/6227 ,  G06F16/9535 ,  Y10S707/99932 ,  Y10S707/99939

摘要： A project management system is enabled to implement filtering, sorting, and field level security for data associated with managed projects. A filter for field selection is prepared by a project client application and forwarded to a project server. The server generates an access attribute table based the user permissions that may be set for each field within the managed projects. Upon retrieving the selected fields from project database, the project server builds a secured list of fields. A data set to be provided to the project client is prepared by removing the fields for which the user lacks the requisite access permission prior to sorting the data. The removed data may be used for user-transparent computations within the project server, but guarded from client applications.

摘要翻译： 项目管理系统能够实现与被管理项目相关的数据的过滤，排序和现场级安全性。 用于现场选择的过滤器由项目客户端应用程序准备并转发到项目服务器。 服务器根据受管理项目中每个字段可能设置的用户权限生成访问属性表。 从项目数据库检索所选字段后，项目服务器构建一个安全的字段列表。 通过在排序数据之前，删除用户缺少必要的访问许可的字段来准备提供给项目客户端的数据集。 删除的数据可以用于项目服务器内的用户透明计算，但可以从客户端应用程序中保护。

公开(公告)号：US07088623B2

公开(公告)日：2006-08-08

申请号：US10685496

申请日：2003-10-16

申请人： Chih-Jen Huang

发明人： Chih-Jen Huang

IPC分类号： G11C16/04

CPC分类号： G11C8/08 ,  G11C16/08 ,  G11C16/16

摘要： The present invention provides a non-volatile memory cell structure suitable for the flash memory cell and EEPROM cell (electrically erasable programmable read only memory cell) to perform the byte programming and byte erasing operations. In the programming operation, a higher negative voltage applied to the drain region, such that the hot holes is generated to induce the hot electrons into the floating gate through the tunneling oxide layer in the lateral electrical field. In addition, the gate voltage is around the threshold voltage, which dependent on the integration circuit device design. Furthermore, the non-volatile memory cell utilized the channel Fowler-Nordheim tunneling for erasing operation. In order to perform the byte erasing operation, the drain junction used as an inhibition switch. Thus, the unselected cell in the same word line is inhibited by biasing the drain to ground. Therefore, the word lines of unselected cells are grounded.

摘要翻译： 本发明提供一种适用于闪存单元和EEPROM单元（电可擦除可编程只读存储单元）的非易失性存储单元结构，用于执行字节编程和字节擦除操作。 在编程操作中，施加到漏极区域的较高的负电压，使得产生热空穴以通过横向电场中的隧道氧化物层将热电子引入浮置栅极。 此外，栅极电压在阈值电压附近，这取决于集成电路器件的设计。 此外，非易失性存储单元利用信道Fowler-Nordheim隧道进行擦除操作。 为了执行字节擦除操作，漏极结用作禁止开关。 因此，通过将漏极偏置到地来抑制相同字线中的未选择的单元。 因此，未选择的单元的字线接地。

公开(公告)号：US20050083738A1

公开(公告)日：2005-04-21

申请号：US10685496

申请日：2003-10-16

申请人： Chih-Jen Huang

发明人： Chih-Jen Huang

IPC分类号： G11C8/08 ,  G11C16/08 ,  G11C16/16 ,  G11C16/04

CPC分类号： G11C8/08 ,  G11C16/08 ,  G11C16/16

摘要： The present invention provides a non-volatile memory cell structure suitable for the flash memory cell and EEPROM cell (electrically erasable programmable read only memory cell) to perform the byte programming and byte erase operations. In the programming operation, a higher negative voltage applied to the drain region, such that the hot hole is generated to induce the hot electron into the floating gate through the tunneling oxide layer in the lateral electrical field. In addition, the gate voltage is around the threshold voltage, which dependent on the integration circuit device design. Furthermore, the non-volatile memory cell utilized the channel Fowler-Nordheim tunneling for erasing operation. In order to perform the byte erasing operation, the drain junction used as an inhibition switch. Thus, the unselected cell in the same word line is inhibited by biasing the drain to ground. Therefore, the word lines of unselected cells are ground.

摘要翻译： 本发明提供一种适用于闪存单元和EEPROM单元（电可擦除可编程只读存储单元）的非易失性存储单元结构，用于执行字节编程和字节擦除操作。 在编程操作中，施加到漏极区域的较高的负电压，使得产生热空穴以通过横向电场中的隧道氧化物层将热电子引入浮置栅极。 此外，栅极电压在阈值电压附近，这取决于集成电路器件的设计。 此外，非易失性存储单元利用信道Fowler-Nordheim隧道进行擦除操作。 为了执行字节擦除操作，漏极结用作禁止开关。 因此，通过将漏极偏置到地来抑制相同字线中的未选择的单元。 因此，未选择的单元的字线被研磨。

公开(公告)号：US06757198B2

公开(公告)日：2004-06-29

申请号：US10387712

申请日：2003-03-12

申请人： Chih-Jen Huang ,  Hwi-Huang Chen ,  Gary Hong

发明人： Chih-Jen Huang ,  Hwi-Huang Chen ,  Gary Hong

IPC分类号： G11C1604

CPC分类号： G11C16/12 ,  G11C16/14

摘要： A method for operating a non-volatile memory device, which is applicable to an n-channel non-volatile memory device, wherein a positive voltage is applied to the control gate, a negative voltage is applied to the drain region while the source region is floating. Furthermore, a negative voltage is applied to the substrate to program to the n-channel memory device by the channel Fowler-Nordheim tunneling effect. To erase the n-channel non-volatile memory device, a negative voltage is applied to the control gate, a positive voltage is applied to the drain region, and the source region is floating. Moreover, a positive voltage is applied to the substrate to erase the n-channel memory device using the channel Fowler-Nordheim tunneling effect.

摘要翻译： 一种用于操作非易失性存储器件的方法，其适用于n沟道非易失性存储器件，其中正电压被施加到控制栅极，负电压被施加到漏极区域，而源区域是 浮动 此外，通过信道Fowler-Nordheim隧道效应将负电压施加到衬底以对n沟道存储器件进行编程。 为了擦除n沟道非易失性存储器件，向控制栅极施加负电压，向漏极区域施加正电压，并且源极区域是浮置的。 此外，使用通道Fowler-Nordheim隧道效应将正电压施加到衬底以擦除n沟道存储器件。