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    TRANSISTORS HAVING A CHANNEL REGION BETWEEN CHANNEL-PORTION HOLES AND METHODS OF FORMING THE SAME
    4.
    发明申请
    TRANSISTORS HAVING A CHANNEL REGION BETWEEN CHANNEL-PORTION HOLES AND METHODS OF FORMING THE SAME 失效
    在通道孔之间具有通道区域的晶体管及其形成方法

    公开(公告)号：US20090114967A1

    公开(公告)日：2009-05-07

    申请号：US12345415

    申请日：2008-12-29

    申请人： Jin-Woo Lee ,  Tae-Young Chung ,  Yong-Sung Kim

    发明人： Jin-Woo Lee ,  Tae-Young Chung ,  Yong-Sung Kim

    IPC分类号： H01L27/108 ,  H01L49/00

    CPC分类号： H01L29/66659 ,  H01L21/823412 ,  H01L21/823437 ,  H01L21/823487 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10888 ,  H01L29/66621 ,  H01L29/7834 ,  H01L29/7835

    摘要： According to some embodiments of the invention, transistors have channel regions between channel-portion holes. Methods of forming the same include at least two channel-portion holes disposed in a semiconductor substrate. Line patterns are formed in parallel to be spaced apart from each other on a main surface of the semiconductor substrate to fill the channel-portion holes. A channel region is disposed in the semiconductor substrate below the line patterns. At this time, the channel region is formed between the channel-portion holes and also covers lower portions of the channel-portion holes. Driving current capability and refresh characteristics of DRAMs utilizing the inventive transistors are improved.

    摘要翻译： 根据本发明的一些实施例，晶体管在沟道部分孔之间具有沟道区。 形成它们的方法包括设置在半导体衬底中的至少两个通道部分孔。 线图案平行地形成为在半导体衬底的主表面上彼此间隔开以填充沟道部分孔。 沟道区域设置在半导体衬底中的线图案下方。 此时，通道区域形成在通道部分孔之间并且还覆盖通道部分孔的下部。 利用本发明晶体管驱动DRAM的驱动电流能力和刷新特性得到改善。

    Transistors having a channel region between channel-portion holes and methods of forming the same
    5.
    发明授权
    Transistors having a channel region between channel-portion holes and methods of forming the same 失效
    在通道部分孔之间具有沟道区的晶体管及其形成方法

    公开(公告)号：US08039895B2

    公开(公告)日：2011-10-18

    申请号：US12345415

    申请日：2008-12-29

    申请人： Jin-Woo Lee ,  Tae-Young Chung ,  Yong-Sung Kim

    发明人： Jin-Woo Lee ,  Tae-Young Chung ,  Yong-Sung Kim

    IPC分类号： H01L29/76

    CPC分类号： H01L29/66659 ,  H01L21/823412 ,  H01L21/823437 ,  H01L21/823487 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10888 ,  H01L29/66621 ,  H01L29/7834 ,  H01L29/7835

    摘要： According to some embodiments of the invention, transistors have channel regions between channel-portion holes. Methods of forming the same include at least two channel-portion holes disposed in a semiconductor substrate. Line patterns are formed in parallel to be spaced apart from each other on a main surface of the semiconductor substrate to fill the channel-portion holes. A channel region is disposed in the semiconductor substrate below the line patterns. At this time, the channel region is formed between the channel-portion holes and also covers lower portions of the channel-portion holes. Driving current capability and refresh characteristics of DRAMs utilizing the inventive transistors are improved.

    摘要翻译： 根据本发明的一些实施例，晶体管在沟道部分孔之间具有沟道区。 形成它们的方法包括设置在半导体衬底中的至少两个通道部分孔。 线图案平行地形成为在半导体衬底的主表面上彼此间隔开以填充沟道部分孔。 沟道区域设置在半导体衬底中的线图案下方。 此时，通道区域形成在通道部分孔之间并且还覆盖通道部分孔的下部。 利用本发明晶体管驱动DRAM的驱动电流能力和刷新特性得到改善。

    Transistors having a channel region between channel-portion holes and methods of forming the same
    6.
    发明授权
    Transistors having a channel region between channel-portion holes and methods of forming the same 失效
    在通道部分孔之间具有沟道区的晶体管及其形成方法

    公开(公告)号：US07492004B2

    公开(公告)日：2009-02-17

    申请号：US11054104

    申请日：2005-02-08

    申请人： Jin-Woo Lee ,  Tae-Young Chung ,  Yong-Sung Kim

    发明人： Jin-Woo Lee ,  Tae-Young Chung ,  Yong-Sung Kim

    IPC分类号： H01L29/94

    CPC分类号： H01L29/66659 ,  H01L21/823412 ,  H01L21/823437 ,  H01L21/823487 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10888 ,  H01L29/66621 ,  H01L29/7834 ,  H01L29/7835

    摘要： According to some embodiments of the invention, transistors have channel regions between channel-portion holes. Methods of forming the same include at least two channel-portion holes disposed in a semiconductor substrate. Line patterns are formed in parallel to be spaced apart from each other on a main surface of the semiconductor substrate to fill the channel-portion holes. A channel region is disposed in the semiconductor substrate below the line patterns. At this time, the channel region is formed between the channel-portion holes and also covers lower portions of the channel-portion holes. Driving current capability and refresh characteristics of DRAMs utilizing the inventive transistors are improved.

    摘要翻译： 根据本发明的一些实施例，晶体管在沟道部分孔之间具有沟道区。 形成它们的方法包括设置在半导体衬底中的至少两个通道部分孔。 线图案平行地形成为在半导体衬底的主表面上彼此间隔开以填充沟道部分孔。 沟道区域设置在半导体衬底中的线图案下方。 此时，通道区域形成在通道部分孔之间并且还覆盖通道部分孔的下部。 利用本发明晶体管驱动DRAM的驱动电流能力和刷新特性得到改善。

    Metal oxide semiconductor (MOS) transistors having a recessed gate electrode
    7.
    发明授权
    Metal oxide semiconductor (MOS) transistors having a recessed gate electrode 有权
    具有凹陷栅电极的金属氧化物半导体（MOS）晶体管

    公开(公告)号：US08487352B2

    公开(公告)日：2013-07-16

    申请号：US13236389

    申请日：2011-09-19

    申请人： Yong-Sung Kim ,  Tae-Young Chung

    发明人： Yong-Sung Kim ,  Tae-Young Chung

    IPC分类号： H01L27/148

    CPC分类号： H01L29/7834 ,  H01L29/51 ,  H01L29/66621

    摘要： A metal oxide semiconductor (MOS) includes an isolation layer disposed in a semiconductor substrate to define an active region. A source region and a drain region are disposed on both sides of the active region such that a first direction is defined from the source region to the drain region. A channel recess is disposed in the active region between the source and drain regions. The channel recess has a convex surface when viewed from a cross-sectional view taken along a second direction orthogonal to the first direction. A gate electrode fills the channel recess and crosses the active region in the second direction. A gate insulating layer is interposed between the gate electrode and the active region.

    摘要翻译： 金属氧化物半导体（MOS）包括设置在半导体衬底中以限定有源区的隔离层。 源极区域和漏极区域设置在有源区域的两侧，使得从源极区域到漏极区域限定第一方向。 通道凹槽设置在源区和漏区之间的有源区中。 当从沿着与第一方向正交的第二方向截取的横截面视图观察时，通道凹部具有凸形表面。 栅电极填充通道凹槽并沿第二方向跨过有源区。 栅极绝缘层插入在栅电极和有源区之间。

    Fabrication of local damascene finFETs using contact type nitride damascene mask
    8.
    发明授权
    Fabrication of local damascene finFETs using contact type nitride damascene mask 失效

    公开(公告)号：US07488654B2

    公开(公告)日：2009-02-10

    申请号：US11508992

    申请日：2006-08-24

    申请人： Yong-Sung Kim ,  Tae-Young Chung

    发明人： Yong-Sung Kim ,  Tae-Young Chung

    IPC分类号： H01L21/336

    CPC分类号： H01L29/785 ,  H01L27/1211 ,  H01L29/66795

    摘要： Disclosed are methods for forming FinFETs using a first hard mask pattern to define active regions and a second hard mask to protect portions of the insulating regions between active regions. The resulting field insulating structure has three distinct regions distinguished by the vertical offset from a reference plane defined by the surface of the active regions. These three regions will include a lower surface found in the recessed openings resulting from the damascene etch, an intermediate surface and an upper surface on the remaining portions of the lateral field insulating regions. The general correspondence between the reference plane and the intermediate surface will tend to suppress or eliminate residual gate electrode materials from this region during formation of the gate electrodes, thereby improving the electrical isolation between adjacent active regions and improving the performance of the resulting semiconductor devices.

    Method of fabricating gate of fin type transistor
    9.
    发明授权
    Method of fabricating gate of fin type transistor 有权
    鳍型晶体管栅极的制造方法

    公开(公告)号：US07413943B2

    公开(公告)日：2008-08-19

    申请号：US11460905

    申请日：2006-07-28

    申请人： Yong-Sung Kim ,  Tae-Young Chung ,  Soo-Ho Shin

    发明人： Yong-Sung Kim ,  Tae-Young Chung ,  Soo-Ho Shin

    IPC分类号： H01L21/336 ,  H01L31/062

    CPC分类号： H01L21/823437 ,  H01L21/823412 ,  H01L29/66795 ,  H01L29/7851

    摘要： A method of fabricating a gate of a fin type transistor includes forming hard masks to define active regions of a substrate. A shallow trench isolation method is performed to form a first device separation layer, and then an etch-back process is performed such that the active regions protrude. Sidewall protection layers are formed on sidewalls of the active region, and a second device separation layer is formed thereon, thereby obtaining a device isolation region. The sidewall protection layers include an insulation material with an etch selectivity with respect to an insulation material composing the device isolation region. The device isolation region is selectively etched to form recesses for a fin type active region. Dry etching and wet etching are performed on the silicon nitride to remove the hard masks and the sidewall protection layers, respectively. Gates are formed to fill the recesses.

    摘要翻译： 制造鳍式晶体管的栅极的方法包括形成硬掩模以限定衬底的有源区。 执行浅沟槽隔离方法以形成第一器件分离层，然后执行回蚀处理，使得有源区域突出。 侧壁保护层形成在有源区的侧壁上，并且在其上形成第二器件分离层，从而获得器件隔离区。 侧壁保护层包括相对于构成器件隔离区域的绝缘材料具有蚀刻选择性的绝缘材料。 选择性地蚀刻器件隔离区以形成翅片型有源区的凹槽。 对氮化硅进行干蚀刻和湿蚀刻以分别去除硬掩模和侧壁保护层。 形成门以填充凹部。

    Metal oxide semiconductor (MOS) transistors having a recessed gate electrode
    10.
    发明授权
    Metal oxide semiconductor (MOS) transistors having a recessed gate electrode 有权
    具有凹陷栅电极的金属氧化物半导体（MOS）晶体管

    公开(公告)号：US08039876B2

    公开(公告)日：2011-10-18

    申请号：US12683089

    申请日：2010-01-06

    申请人： Yong-Sung Kim ,  Tae-Young Chung

    发明人： Yong-Sung Kim ,  Tae-Young Chung

    IPC分类号： H01L27/148

    CPC分类号： H01L29/7834 ,  H01L29/51 ,  H01L29/66621

    摘要： A metal oxide semiconductor (MOS) includes an isolation layer disposed in a semiconductor substrate to define an active region. A source region and a drain region are disposed on both sides of the active region such that a first direction is defined from the source region to the drain region. A channel recess is disposed in the active region between the source and drain regions. The channel recess has a convex surface when viewed from a cross-sectional view taken along a second direction orthogonal to the first direction. A gate electrode fills the channel recess and crosses the active region in the second direction. A gate insulating layer is interposed between the gate electrode and the active region.

    摘要翻译： 金属氧化物半导体（MOS）包括设置在半导体衬底中以限定有源区的隔离层。 源极区域和漏极区域设置在有源区域的两侧，使得从源极区域到漏极区域限定第一方向。 通道凹槽设置在源区和漏区之间的有源区中。 当从沿着与第一方向正交的第二方向截取的横截面视图观察时，通道凹部具有凸形表面。 栅电极填充通道凹槽并沿第二方向跨过有源区。 栅极绝缘层插入在栅电极和有源区之间。