公开(公告)号：US06403491B1

公开(公告)日：2002-06-11

申请号：US09704867

申请日：2000-11-01

申请人： Jingbao Liu ,  Judy Wang ,  Takehiko Komatsu ,  Bryan Y Pu ,  Kenny L Doan ,  Claes Bjorkman ,  Melody Chang ,  Yunsang Kim ,  Hongching Shan ,  Ruiping Wang

发明人： Jingbao Liu ,  Judy Wang ,  Takehiko Komatsu ,  Bryan Y Pu ,  Kenny L Doan ,  Claes Bjorkman ,  Melody Chang ,  Yunsang Kim ,  Hongching Shan ,  Ruiping Wang

IPC分类号： H01L213065

CPC分类号： H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

摘要： A method for etching a dielectric in a thermally controlled plasma etch chamber with an expanded processing window. The method is adapted to incorporate benefits of a the thermal control and high evacuation capability of the chamber. Etchent gases include hydrocarbons, oxygen and inert gas. Explanation is provided for enablling the use of hexafluoro-1,3-butadiene in a capacitively coupled etch plasma. The method is very useful for creating via, self aligned contacts, dual damascene, and other dielectric etch.

摘要翻译： 一种用于在具有扩展的处理窗口的热控等离子体蚀刻室中蚀刻电介质的方法。 该方法适于结合腔室的热控制和高排气能力的优点。 Etchent气体包括碳氢化合物，氧气和惰性气体。 提供了解释在电容耦合蚀刻等离子体中使用六氟-1,3-丁二烯的方法。 该方法对于创建通孔，自对准触点，双镶嵌和其他电介质蚀刻非常有用。

公开(公告)号：US06613689B2

公开(公告)日：2003-09-02

申请号：US10144365

申请日：2002-05-13

申请人： Jingbao Liu ,  Takehiko Komatsu ,  Hongqing Shan ,  Keji Horioka ,  Bryan Y Pu

发明人： Jingbao Liu ,  Takehiko Komatsu ,  Hongqing Shan ,  Keji Horioka ,  Bryan Y Pu

IPC分类号： H01L21302

CPC分类号： H01L21/31116 ,  H01L21/76802

摘要： An oxide etch process practiced in a plasma etch reactor, such as a magnetically enhanced reactive ion etch (MERIE) reactor. The etching gas includes approximately equal amounts of a hydrogen-free fluorocarbon, most preferably C4F6, and oxygen and a much larger amount of argon diluent gas. The magnetic field is preferably maintained above about 50 gauss and the pressure at 40 milliTorr or above with chamber residence times of less than 70 milliseconds. A two-step process may be used for etching holes with very high aspect ratios. In the second step, the magnetic filed and the oxygen flow are reduced. Other fluorocarbons may be substituted which have F/C ratios of less than 2 and more preferably no more than 1.6 or 1.5.

公开(公告)号：US06451703B1

公开(公告)日：2002-09-17

申请号：US09522374

申请日：2000-03-10

申请人： Jingbao Liu ,  Takehiko Komatsu ,  Hongqing Shan ,  Keji Horioka ,  Bryan Y Pu

发明人： Jingbao Liu ,  Takehiko Komatsu ,  Hongqing Shan ,  Keji Horioka ,  Bryan Y Pu

IPC分类号： H01L21302

CPC分类号： H01L21/31116 ,  H01L21/76802

摘要： An oxide etch process practiced in magnetically enhanced reactive ion etch (MERIE) plasma reactor. The etching gas includes approximately equal amounts of a hydrogen-free fluorocarbon, most preferably C4F6, and oxygen and a much larger amount of argon diluent gas. The magnetic field is preferably maintained above about 50 gauss and the pressure at 40 milliTorr or above with chamber residence times of less than 70 milliseconds. A two-step process may be used for etching holes with very high aspect ratios. In the second step, the magnetic filed and the oxygen flow are reduced. Other fluorocarbons may be substituted which have F/C ratios of less than 2 and more preferably no more than 1.6 or 1.5.

摘要翻译： 在磁增强反应离子蚀刻（MERIE）等离子体反应器中实施的氧化物蚀刻工艺。 蚀刻气体包括大致相等量的无氢碳氟化合物，最优选C 4 F 6，以及氧气和更大量的氩稀释气体。 磁场优选保持在大约50高斯以上，压力在40毫托或更高，室停留时间小于70毫秒。 可以使用两步法来蚀刻具有非常高的纵横比的孔。 在第二步中，磁场和氧气流减少。 其它碳氟化合物可以被取代，其F / C比小于2，更优选不超过1.6或1.5。

公开(公告)号：US06362109B1

公开(公告)日：2002-03-26

申请号：US09585632

申请日：2000-06-02

申请人： Yungsang Kim ,  Takehiko Komatsu ,  Claes H. Bjorkman ,  Hongqing Shan

发明人： Yungsang Kim ,  Takehiko Komatsu ,  Claes H. Bjorkman ,  Hongqing Shan

IPC分类号： H01L213065

CPC分类号： H01L21/76802 ,  H01L21/31116

摘要： A single-step plasma etch process for etching both oxide and nitride selectively to photoresist and silicon. The etching gas includes a fluorocarbon, difluoromethane, oxygen, and carbon monoxide. The fluorocarbon is preferably hydrogen free. Preferred fluorocarbons are hexafluorobutadiene (C4F6), octafluorocyclobutane (C4F8), and carbon tetrafluoride (CF4), of which C4F6 is the most preferred. Approximately equal amounts are supplied of the fluorocarbon, difluoromethane, and oxygen and a significantly larger amount of carbon monoxide. The chemistry is also applicable to etching organo silicate glass selectively to photoresist.

摘要翻译： 用于将氧化物和氮化物选择性地蚀刻到光​​致抗蚀剂和硅上的单步等离子体蚀刻工艺。 蚀刻气体包括碳氟化合物，二氟甲烷，氧气和一氧化碳。 碳氟化合物优选不含氢。 优选的碳氟化合物是六氟丁二烯（C 4 F 6），八氟环丁烷（C 4 F 8）和四氟化碳（CF 4），其中C 4 F 6是最优选的。 碳氟化合物，二氟甲烷和氧气的供给量大约相等，而一氧化碳含量显着增加。 该化学反应也适用于选择性地蚀刻有机硅酸盐玻璃。

公开(公告)号：US06897154B2

公开(公告)日：2005-05-24

申请号：US10172243

申请日：2002-06-14

申请人： Terry Leung ,  Qiqun Zheng ,  Chang-Lin Hsieh ,  Yan Ye ,  Takehiko Komatsu

发明人： Terry Leung ,  Qiqun Zheng ,  Chang-Lin Hsieh ,  Yan Ye ,  Takehiko Komatsu

IPC分类号： H01L21/311 ,  H01L21/302 ,  C09K13/00 ,  H01L21/3065

CPC分类号： H01L21/31116 ,  H01L21/31144

摘要： The present invention provides a low-k dielectric etching process with high etching selectivities with respect to adjacent layers of other materials, such as an overlying photoresist mask and an underlying barrier/liner layer. The process comprises the step of exposing a portion of the low-k dielectric layer to a plasma of a process gas that includes a fluorocarbon gas, a nitrogen-containing gas, and an inert gas, wherein the volumetric flow ratio of inert:fluorocarbon gas is in the range of 20:1 to 100:1, and the volumetric flow ratio of fluorocarbon:nitrogen-containing gas is selected to provide a low-k dielectric to photoresist etching selectivity ratio greater than about 5:1 and a low-k dielectric etch rate higher than about 4000 Å/min.

摘要翻译： 本发明提供了相对于其它材料的相邻层（例如覆盖光致抗蚀剂掩模和下面的阻挡层/衬里层）具有高蚀刻选择性的低k电介质蚀刻工艺。 该方法包括将低k电介质层的一部分暴露于包括碳氟化合物气体，含氮气体和惰性气体的工艺气体的等离子体的步骤，其中惰性：碳氟化合物气体的体积流量比 在20:1至100:1的范围内，选择碳氟化合物：含氮气体的体积流量比以提供低k电介质至光致抗蚀剂蚀刻选择比大于约5:1，低k 介电蚀刻速率高于约4000 / min。