公开(公告)号：US06362109B1

公开(公告)日：2002-03-26

申请号：US09585632

申请日：2000-06-02

申请人： Yungsang Kim ,  Takehiko Komatsu ,  Claes H. Bjorkman ,  Hongqing Shan

发明人： Yungsang Kim ,  Takehiko Komatsu ,  Claes H. Bjorkman ,  Hongqing Shan

IPC分类号： H01L213065

CPC分类号： H01L21/76802 ,  H01L21/31116

摘要： A single-step plasma etch process for etching both oxide and nitride selectively to photoresist and silicon. The etching gas includes a fluorocarbon, difluoromethane, oxygen, and carbon monoxide. The fluorocarbon is preferably hydrogen free. Preferred fluorocarbons are hexafluorobutadiene (C4F6), octafluorocyclobutane (C4F8), and carbon tetrafluoride (CF4), of which C4F6 is the most preferred. Approximately equal amounts are supplied of the fluorocarbon, difluoromethane, and oxygen and a significantly larger amount of carbon monoxide. The chemistry is also applicable to etching organo silicate glass selectively to photoresist.

摘要翻译： 用于将氧化物和氮化物选择性地蚀刻到光​​致抗蚀剂和硅上的单步等离子体蚀刻工艺。 蚀刻气体包括碳氟化合物，二氟甲烷，氧气和一氧化碳。 碳氟化合物优选不含氢。 优选的碳氟化合物是六氟丁二烯（C 4 F 6），八氟环丁烷（C 4 F 8）和四氟化碳（CF 4），其中C 4 F 6是最优选的。 碳氟化合物，二氟甲烷和氧气的供给量大约相等，而一氧化碳含量显着增加。 该化学反应也适用于选择性地蚀刻有机硅酸盐玻璃。

公开(公告)号：US06613689B2

公开(公告)日：2003-09-02

申请号：US10144365

申请日：2002-05-13

申请人： Jingbao Liu ,  Takehiko Komatsu ,  Hongqing Shan ,  Keji Horioka ,  Bryan Y Pu

发明人： Jingbao Liu ,  Takehiko Komatsu ,  Hongqing Shan ,  Keji Horioka ,  Bryan Y Pu

IPC分类号： H01L21302

CPC分类号： H01L21/31116 ,  H01L21/76802

摘要： An oxide etch process practiced in a plasma etch reactor, such as a magnetically enhanced reactive ion etch (MERIE) reactor. The etching gas includes approximately equal amounts of a hydrogen-free fluorocarbon, most preferably C4F6, and oxygen and a much larger amount of argon diluent gas. The magnetic field is preferably maintained above about 50 gauss and the pressure at 40 milliTorr or above with chamber residence times of less than 70 milliseconds. A two-step process may be used for etching holes with very high aspect ratios. In the second step, the magnetic filed and the oxygen flow are reduced. Other fluorocarbons may be substituted which have F/C ratios of less than 2 and more preferably no more than 1.6 or 1.5.

公开(公告)号：US06451703B1

公开(公告)日：2002-09-17

申请号：US09522374

申请日：2000-03-10

申请人： Jingbao Liu ,  Takehiko Komatsu ,  Hongqing Shan ,  Keji Horioka ,  Bryan Y Pu

发明人： Jingbao Liu ,  Takehiko Komatsu ,  Hongqing Shan ,  Keji Horioka ,  Bryan Y Pu

IPC分类号： H01L21302

CPC分类号： H01L21/31116 ,  H01L21/76802

摘要： An oxide etch process practiced in magnetically enhanced reactive ion etch (MERIE) plasma reactor. The etching gas includes approximately equal amounts of a hydrogen-free fluorocarbon, most preferably C4F6, and oxygen and a much larger amount of argon diluent gas. The magnetic field is preferably maintained above about 50 gauss and the pressure at 40 milliTorr or above with chamber residence times of less than 70 milliseconds. A two-step process may be used for etching holes with very high aspect ratios. In the second step, the magnetic filed and the oxygen flow are reduced. Other fluorocarbons may be substituted which have F/C ratios of less than 2 and more preferably no more than 1.6 or 1.5.

摘要翻译： 在磁增强反应离子蚀刻（MERIE）等离子体反应器中实施的氧化物蚀刻工艺。 蚀刻气体包括大致相等量的无氢碳氟化合物，最优选C 4 F 6，以及氧气和更大量的氩稀释气体。 磁场优选保持在大约50高斯以上，压力在40毫托或更高，室停留时间小于70毫秒。 可以使用两步法来蚀刻具有非常高的纵横比的孔。 在第二步中，磁场和氧气流减少。 其它碳氟化合物可以被取代，其F / C比小于2，更优选不超过1.6或1.5。

公开(公告)号：US20060039781A1

公开(公告)日：2006-02-23

申请号：US11097412

申请日：2005-04-01

申请人： Leszek Niewmierzycki ,  David Barker ,  Michael Kuhlman ,  Ryan Pakulski ,  Hongqing Shan ,  Martin Zucker

发明人： Leszek Niewmierzycki ,  David Barker ,  Michael Kuhlman ,  Ryan Pakulski ,  Hongqing Shan ,  Martin Zucker

IPC分类号： H01L21/677

CPC分类号： B65G15/12 ,  H01L21/67742 ,  H01L21/67766 ,  H01L21/68707 ,  Y10S414/135 ,  Y10S414/139

摘要： A wafer processing system and method in which a wafer, having a diameter, is movable between a loadlock and a processing chamber. A transfer chamber is arranged for selective pressure communication with the loadlock and the processing chamber. The transfer chamber having a configuration of lateral extents such that the wafer is movable through the transfer chamber between the loadlock and processing chamber along a wafer transfer path and the configuration of lateral extents causes the wafer, having the wafer diameter and moving along the wafer transfer path, to interfere with at least one of the loadlock and the processing chamber for any position along the wafer transfer path. The wafer includes a center and the wafer transfer path cab be defined by movement of the center through the transfer chamber. Swing arms are described that can independently move by different angles in opposing directions from a home position.

摘要翻译： 一种晶片处理系统和方法，其中具有直径的晶片可在负载锁和处理室之间移动。 传送室被布置成用于与装载锁和处理室的选择性压力连通。 传送室具有横向范围的构造，使得晶片可沿着晶片传送路径移动通过负载锁和处理室之间的传送室，并且横向范围的配置导致具有晶片直径并沿着晶片传送移动的晶片 路径，以便沿着晶片传送路径的任何位置干扰负载锁和处理室中的至少一个。 晶片包括中心，并且晶片传送路径驾驶室由中心通过传送室的运动限定。 描述了可以从起始位置以相反方向独立地移动不同角度的摆动臂。

公开(公告)号：US06905624B2

公开(公告)日：2005-06-14

申请号：US10615159

申请日：2003-07-07

申请人： Coriolan I. Frum ,  Zhifeng Sui ,  Hongqing Shan

发明人： Coriolan I. Frum ,  Zhifeng Sui ,  Hongqing Shan

IPC分类号： H01L21/66 ,  C23F1/00 ,  C23F4/00 ,  C23F4/02 ,  G01N21/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/461 ,  H01L21/465

CPC分类号： H01J37/32963 ,  H01J37/32935

摘要： A method of etching a substrate includes placing a substrate in a process zone. The substrate has a material with a thickness, and the material has exposed regions between features of a patterned mask. An etchant gas is introduced into the process zone. The etchant gas is energized to etch the material. An endpoint of etching the material of the substrate is determined by (i) reflecting a light beam from the substrate, the light beam having a wavelength selected to have a coherence length in the substrate of from about 1.5 to about 4 times the thickness of the material, and (ii) detecting the reflected light beam to determine an endpoint of the substrate etching process. Additionally, the wavelength of the light beam can be selected to maximize an absorption differential that is a difference between the absorption of the light beam in the patterned mask and the absorption of the light beam in the material.

摘要翻译： 蚀刻衬底的方法包括将衬底放置在处理区中。 衬底具有厚度的材料，并且材料在图案化掩模的特征之间具有曝光区域。 将蚀刻剂气体引入过程区域。 蚀刻剂气体通电以蚀刻材料。 通过（i）反射来自衬底的光束来确定蚀刻衬底的材料的端点，所述光束具有被选择为具有衬底中的相干长度的波长为其厚度的约1.5至约4倍 材料，和（ii）检测反射光束以确定基板蚀刻工艺的端点。 此外，可以选择光束的波长以最大化作为图案化掩模中的光束的吸收与材料中光束的吸收之间的差异的吸收差异。

公开(公告)号：US06829056B1

公开(公告)日：2004-12-07

申请号：US10646943

申请日：2003-08-21

申请人： Michael Barnes ,  John Holland ,  Hongqing Shan ,  Bryan Y. Pu ,  Mohit Jain ,  Zhifeng Sui ,  Michael D. Armacost ,  Neil E. Hanson ,  Diana Xiaobing Ma ,  Ashok K. Sinha ,  Dan Maydan

发明人： Michael Barnes ,  John Holland ,  Hongqing Shan ,  Bryan Y. Pu ,  Mohit Jain ,  Zhifeng Sui ,  Michael D. Armacost ,  Neil E. Hanson ,  Diana Xiaobing Ma ,  Ashok K. Sinha ,  Dan Maydan

IPC分类号： G01B1114

CPC分类号： H01L21/67253 ,  H01J37/32935 ,  H01L21/67069

摘要： A substrate processing apparatus has a chamber having a substrate support, gas distributor, gas energizer, and gas exhaust port. A process monitor is provided to monitor features in a first region of the substrate and generate a corresponding first signal, and to monitor features in a second region of the substrate and generate a second signal. A chamber controller receives and evaluates the first and second signals, and operates the chamber in relation to the signals. For example, the chamber controller can select a process recipe depending upon the signal values. The chamber controller can also set a process parameter at a first level in a first processing sector and at a second level in a second processing sector. The apparatus provides a closed control loop to independently monitor and control processing of features at different regions of the substrate.

摘要翻译： 基板处理装置具有具有基板支撑件，气体分配器，气体激励器和排气口的腔室。 提供过程监视器以​​监测衬底的第一区域中的特征并产生相应的第一信号，并且监测衬底的第二区域中的特征并产生第二信号。 室控制器接收并评估第一和第二信号，并相对于信号操作室。 例如，腔室控​​制器可以根据信号值选择工艺配方。 腔室控制器还可以在第一处理扇区中将处理参数设置在第一电平处，并在第二处理扇区中将第二电平设置为第二电平。 该装置提供一个闭合的控制回路以独立地监测和控制基板的不同区域处的特征的处理。

公开(公告)号：US06521082B1

公开(公告)日：2003-02-18

申请号：US10124161

申请日：2002-04-16

申请人： Michael S Barnes ,  Hongqing Shan

发明人： Michael S Barnes ,  Hongqing Shan

IPC分类号： H05H100

CPC分类号： H01J37/32623 ,  H01J37/3266

摘要： Within both a magnetically enhanced plasma apparatus and a magnetically enhanced plasma method there is employed: (1) a repetitive and geometrically selective pulsing of a magnetic field from a first level to a second level within a reactor chamber; and (2) a repetitive pulsing of a radio frequency power from a first level to a second level within the reactor chamber when repetitively and geometrically selectively pulsing from the first level to the second level the magnetic field within the reactor chamber. The concurrent repetitive pulsings provide a plasma within the reactor chamber with enhanced plasma uniformity and enhanced ion energy control.

摘要翻译： 在磁增强等离子体装置和磁增强等离子体方法两者中，采用：（1）在反应器室内从第一级到第二级的磁场的重复和几何选择性脉冲; 以及（2）当从所述反应器室中的所述第一电平到所述第二电平将所述磁场重复地和几何地选择性地脉冲时，从所述反应器室内的第一电平到所述第二电平的射频功率的重复脉冲。 同时的重复脉冲在反应器室内提供等离子体，具有增强的等离子体均匀性和增强的离子能量控制。

公开(公告)号：US08668422B2

公开(公告)日：2014-03-11

申请号：US10919582

申请日：2004-08-17

申请人： Leszek Niewmierzycki ,  David Barker ,  Daniel J. Devine ,  Michael Kuhlman ,  Ryan Pakulski ,  Hongqing Shan ,  Martin Zucker

发明人： Leszek Niewmierzycki ,  David Barker ,  Daniel J. Devine ,  Michael Kuhlman ,  Ryan Pakulski ,  Hongqing Shan ,  Martin Zucker

IPC分类号： H01L21/677

CPC分类号： B65G15/12 ,  H01L21/67742 ,  H01L21/67766 ,  H01L21/68707 ,  Y10S414/135 ,  Y10S414/139

摘要： As part of a system for processing workpieces, a workpiece support arrangement, separate from a process chamber arrangement supports at least two workpieces at least generally in a stacked relationship to form a workpiece column. A transfer arrangement transports at least two of the workpieces between the workpiece column and the process chamber arrangement by simultaneously moving the two workpieces at least generally along first and second transfer paths, respectively, that are defined between the workpiece column and the first and second process stations. The transfer arrangement can simultaneously move untreated and treated workpieces. Vertical motion swing arms and coaxial swing arms are described. A pair of spaced apart swing arms, the workpiece column and the processing stations can cooperatively define a pentagonal shape. Timing belt backlash elimination, a dual degree of freedom slot valve and low point chamber pumping, for removing chamber contaminants, are also described.

摘要翻译： 作为用于处理工件的系统的一部分，与处理室装置分离的工件支撑装置至少大体上以堆叠关系支撑至少两个工件以形成工件柱。 传送装置通过同时移动两个工件至少大致沿着分别在工件柱和第一和第二过程之间的第一和第二传送路径移动工件柱和处理室装置之间的至少两个工件 车站。 传送装置可以同时移动未经处理和处理的工件。 描述了垂直运动摆臂和同轴摆臂。 一对间隔开的摆臂，工件列和加工台可以协调地限定五边形形状。 还描述了同步带齿隙消除，双自由度槽阀和低点室泵送，用于去除室污染物。

公开(公告)号：US20070175864A1

公开(公告)日：2007-08-02

申请号：US11622361

申请日：2007-01-11

申请人： Leszek Niewmierzycki ,  David Barker ,  Daniel Devine ,  Michael Kuhlman ,  Ryan Pakulski ,  Hongqing Shan ,  Martin Zucker

发明人： Leszek Niewmierzycki ,  David Barker ,  Daniel Devine ,  Michael Kuhlman ,  Ryan Pakulski ,  Hongqing Shan ,  Martin Zucker

IPC分类号： C03C15/00 ,  B44C1/22 ,  H01L21/306

CPC分类号： B65G15/12 ,  H01L21/67742 ,  H01L21/67766 ,  H01L21/68707 ,  Y10S414/135 ,  Y10S414/139

摘要： As part of a system for processing workpieces, a workpiece support arrangement, separate from a process chamber arrangement supports at least two workpieces at least generally in a stacked relationship to form a workpiece column. A transfer arrangement transports at least two of the workpieces between the workpiece column and the process chamber arrangement by simultaneously moving the two workpieces at least generally along first and second transfer paths, respectively, that are defined between the workpiece column and the first and second process stations. The transfer arrangement can simultaneously move untreated and treated workpieces. Vertical motion swing arms and coaxial swing arms are described. A pair of spaced apart swing arms, the workpiece column and the processing stations can cooperatively define a pentagonal shape. Timing belt backlash elimination, a dual degree of freedom slot valve and low point chamber pumping, for removing chamber contaminants, are also described.

摘要翻译： 作为用于处理工件的系统的一部分，与处理室装置分离的工件支撑装置至少大体上以堆叠关系支撑至少两个工件以形成工件柱。 传送装置通过同时移动两个工件至少大致沿着分别在工件柱和第一和第二过程之间的第一和第二传送路径移动工件柱和处理室装置之间的至少两个工件 车站。 传送装置可以同时移动未经处理和处理的工件。 描述了垂直运动摆臂和同轴摆臂。 一对间隔开的摆臂，工件列和加工台可以协调地限定五边形形状。 还描述了同步带齿隙消除，双自由度槽阀和低点室泵送，用于去除室污染物。

公开(公告)号：US06849193B2

公开(公告)日：2005-02-01

申请号：US10144635

申请日：2002-05-13

申请人： Hoiman Hung ,  Joseph P Caulfield ,  Hongqing Shan ,  Ruiping Wang ,  Gerald Zheyao Yin

发明人： Hoiman Hung ,  Joseph P Caulfield ,  Hongqing Shan ,  Ruiping Wang ,  Gerald Zheyao Yin

IPC分类号： H01L21/311 ,  H01L21/00

CPC分类号： H01L21/31116

摘要： An oxide etching process, particularly useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. The invention uses a heavy perfluorocarbon, for example, hexafluorobutadiene (C4F6) or hexafluorobenzene (C6F6). The fluorocarbon together with a substantial amount of a noble gas such as argon is excited into a high-density plasma in a reactor which inductively couples plasma source power into the chamber and RF biases the pedestal electrode supporting the wafer. A more strongly polymerizing fluorocarbon such as difluoromethane (CH2F2) is added in the over etch to protect the nitride corner. Oxygen or nitrogen may be added to counteract the polymerization. The same chemistry can be used in a magnetically enhanced reactive ion etcher (MERIE) or with a remote plasma source.

摘要翻译： 氧化物蚀刻工艺，特别适用于在具有非氧化物组成的特征（例如氮化硅）上选择性地蚀刻氧化物，特别是当该特征具有在氧化物蚀刻期间易于刻面的拐角时。 本发明使用重质全氟化碳，例如六氟丁二烯（C 4 F 6）或六氟苯（C 6 F 6）。 将碳氟化合物与大量惰性气体如氩气一起激发到反应器中的高密度等离子体中，该反应器将等离子体源功率感应耦合到腔室中，并且RF偏压支撑晶片的基座电极。 在过蚀刻中加入更强烈聚合的碳氟化合物如二氟甲烷（CH 2 F 2）以保护氮化物角。 可以加入氧气或氮气以抵抗聚合反应。 相同的化学成分可用于磁增强反应离子蚀刻器（MERIE）或远程等离子体源。