公开(公告)号：US08664028B2

公开(公告)日：2014-03-04

申请号：US13416344

申请日：2012-03-09

申请人： Yasuyuki Shibata ,  Ji-Hao Liang

发明人： Yasuyuki Shibata ,  Ji-Hao Liang

IPC分类号： H01L21/18 ,  H01L31/18

CPC分类号： H01L21/02664 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0259 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/187 ,  H01L33/007 ,  H01L33/0079

摘要： (a) On a growth substrate, a void-containing layer that is made of a group III nitride compound semiconductor and contains voids is formed. (b) On the void-containing layer, an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids is formed. (c) On the n-type layer, an active layer made of a group III nitride compound semiconductor is formed. (d) On the active layer, a p-type layer made of a p-type group III nitride compound semiconductor is formed. (e) A support substrate is bonded above the p-type layer. (f) The growth substrate is peeled off at the boundary where the voids are produced. In the above step (a) or (b), the supply of at least part of the materials that form the layer is decreased, while heating, before the voids are closed.

摘要翻译： （a）在生长基板上形成由III族氮化物半导体构成且含有空隙的含空隙层。 （b）在含空隙层上，形成由n型III族氮化物半导体构成并用于封闭空隙的n型层。 （c）在n型层上形成由III族氮化物化合物半导体构成的有源层。 （d）在有源层上形成由p型III族氮化物半导体构成的p型层。 （e）在p型层上方结合有支撑基板。 （f）生长衬底在产生空隙的边界处被剥离。 在上述步骤（a）或（b）中，在空隙闭合之前，至少部分形成层的材料的供应在加热的同时减少。

公开(公告)号：US20120241805A1

公开(公告)日：2012-09-27

申请号：US13426141

申请日：2012-03-21

申请人： Yasuyuki SHIBATA ,  Ji-Hao LIANG ,  Jiro HIGASHINO

发明人： Yasuyuki SHIBATA ,  Ji-Hao LIANG ,  Jiro HIGASHINO

IPC分类号： H01L33/36 ,  H01L33/48

CPC分类号： H01L33/0095 ,  H01L33/0079 ,  H01L33/44

摘要： A manufacturing method of a semiconductor light emitting element, includes forming sacrifice portions within the width of street portions in a semiconductor laminated body, and performing wet etching to remove the sacrifice portions together with their neighboring portions, thereby removing etching residuals in the streets.

摘要翻译： 半导体发光元件的制造方法，包括在半导体层叠体中在街道部分的宽度内形成牺牲部分，并进行湿蚀刻以与其相邻部分一起去除牺牲部分，从而去除街道中的蚀刻残留物。

公开(公告)号：US20120231568A1

公开(公告)日：2012-09-13

申请号：US13416344

申请日：2012-03-09

申请人： Yasuyuki Shibata ,  Ji-Hao Liang

发明人： Yasuyuki Shibata ,  Ji-Hao Liang

IPC分类号： H01L33/06

CPC分类号： H01L21/02664 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0259 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/187 ,  H01L33/007 ,  H01L33/0079

摘要： (a) On a growth substrate, a void-containing layer that is made of a group III nitride compound semiconductor and contains voids is formed. (b) On the void-containing layer, an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids is formed. (c) On the n-type layer, an active layer made of a group III nitride compound semiconductor is formed. (d) On the active layer, a p-type layer made of a p-type group III nitride compound semiconductor is formed. (e) A support substrate is bonded above the p-type layer. (f) The growth substrate is peeled off at the boundary where the voids are produced. In the above step (a) or (b), the supply of at least part of the materials that form the layer is decreased, while heating, before the voids are closed.

摘要翻译： （a）在生长基板上形成由III族氮化物半导体构成且含有空隙的含空隙层。 （b）在含空隙层上，形成由n型III族氮化物半导体构成并用于封闭空隙的n型层。 （c）在n型层上形成由III族氮化物化合物半导体构成的有源层。 （d）在有源层上形成由p型III族氮化物半导体构成的p型层。 （e）在p型层上方结合有支撑基板。 （f）生长衬底在产生空隙的边界处被剥离。 在上述步骤（a）或（b）中，在空隙闭合之前，至少部分形成层的材料的供应在加热的同时减少。

公开(公告)号：US20120224378A1

公开(公告)日：2012-09-06

申请号：US13409676

申请日：2012-03-01

申请人： Teruo KOIKE ,  Ji-Hao Liang

发明人： Teruo KOIKE ,  Ji-Hao Liang

IPC分类号： F21V13/14 ,  F21V13/02

CPC分类号： H01S5/005 ,  C09K11/7774 ,  H01S5/32341

摘要： A wavelength converting member radiates light having a wavelength different from that of laser light introduced into the wavelength converting member. The wavelength converting member has a phosphor layer that contains a phosphor therein. The phosphor layer has a laser light incidence surface capable of receiving the laser light. The wavelength converting member also has a high-refractive layer that is bonded to an opposite surface of the phosphor layer to the laser light incidence surface thereof. A refractive index of the high-refractive layer is higher than a refractive index of the phosphor layer. The high-refractive layer has concaves on at least either the bonding surface where the high-refractive layer is bonded to the phosphor layer or a light extraction surface that is opposite the bonding surface.

摘要翻译： 波长转换构件辐射具有与引入到波长转换构件的激光的波长不同的波长的光。 波长转换构件具有在其中含有荧光体的荧光体层。 荧光体层具有能够接收激光的激光入射面。 波长转换部件还具有与荧光体层相对的激光入射面接合的高折射率层。 高折射层的折射率高于荧光体层的折射率。 高折射层在高折射层与荧光体层接合的接合面或与接合面相反的光提取面的至少一面具有凹部。

公开(公告)号：US20110216550A1

公开(公告)日：2011-09-08

申请号：US13039305

申请日：2011-03-02

申请人： Teruo KOIKE ,  Ji Hao Liang

发明人： Teruo KOIKE ,  Ji Hao Liang

IPC分类号： F21S8/10

CPC分类号： F21S43/13 ,  F21S41/14 ,  F21S41/16

摘要： A vehicle light can prevent or suppress uneven luminance chromaticity or uneven intensity distribution of light caused by reflection of blue laser beams emitted from a laser light source and reflected by the surface of a metal plate located around fluorescent material. The vehicle light can include a metal plate, a fluorescent material provided on a surface of the metal plate. The fluorescent material can serve as a light source for emitting light beams as a result of excitation by a blue laser beam. A laser light source can be configured to emit the blue laser beam to be incident on the fluorescent material. A reflection suppressing member can be provided to cover the surface of the metal plate around the fluorescent material and can be configured to suppress the reflection of the blue laser beam emitted by the laser light source.

摘要翻译： 车灯可以防止或抑制由激光光源发射并由位于荧光材料周围的金属板的表面反射的由蓝色激光束反射引起的光的不均匀的亮度色度或不均匀的强度分布。 车辆灯可以包括金属板，设置在金属板的表面上的荧光材料。 荧光材料可以作为由蓝色激光束激发的结果发射光束的光源。 激光源可被配置为发射入射到荧光材料上的蓝色激光束。 可以设置反射抑制构件以覆盖荧光材料周围的金属板的表面，并且可以被配置为抑制由激光光源发射的蓝色激光束的反射。

公开(公告)号：US20100155740A1

公开(公告)日：2010-06-24

申请号：US12636961

申请日：2009-12-14

申请人： Takako CHINONE ,  Ji-Hao Liang ,  Yasuyuki Shibata ,  Jiro Higashino

发明人： Takako CHINONE ,  Ji-Hao Liang ,  Yasuyuki Shibata ,  Jiro Higashino

IPC分类号： H01L29/20 ,  H01L21/18

CPC分类号： H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02636 ,  H01L33/007 ,  H01L33/0079

摘要： A cavity-containing layer having a plurality of cavities is formed on a growth substrate by carrying out in alternating fashion a plurality of cycles of a first and second growth steps of growing a group III nitride at growth rates different from each other. The semiconductor epitaxial layer is subsequently formed on the cavity-containing layer, after which a support substrate is bonded to the semiconductor epitaxial layer. The growth substrate is separated from the cavity-containing layer.

摘要翻译： 通过以不同的生长速率生长III族氮化物的第一和第二生长步骤的多个循环的交替方式，在生长衬底上形成具有多个空腔的含空腔层。 随后在空腔含有层上形成半导体外延层，然后将支撑衬底接合到半导体外延层。 生长衬底与含空腔层分离。

公开(公告)号：US20100148309A1

公开(公告)日：2010-06-17

申请号：US12636934

申请日：2009-12-14

申请人： Ji-Hao Liang ,  Takako Chinone ,  Yasuyuki Shibata ,  Jiro Higashino

发明人： Ji-Hao Liang ,  Takako Chinone ,  Yasuyuki Shibata ,  Jiro Higashino

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L21/02639 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0079

摘要： There is provided a method for manufacturing a semiconductor device in which a selective growth mask for partially covering a growth substrate is formed on a growth substrate; a buffer layer that is thicker than the mask is formed on a non-mask part not covered by the mask on the growth substrate, and a predetermined facet is exposed on the surface of the buffer layer; a semiconductor film is laterally grown using the buffer layer as a starting point, and a lateral growth layer for covering the mask is formed while cavities are formed on the upper part of the mask; and a device function layer is epitaxially grown on the lateral growth layer. The cavity formation step includes a first step for growing a semiconductor film at a growth rate and a second step for growing another semiconductor film at another growth rate mutually different from the first growth rate, wherein the first and second steps are carried out a plurality of times in alternating fashion.

摘要翻译： 提供一种制造半导体器件的方法，其中在生长衬底上形成用于部分覆盖生长衬底的选择性生长掩模; 在生长衬底上未被掩模覆盖的非掩模部分上形成比掩模厚的缓冲层，并且在缓冲层的表面上露出预定的刻面; 使用缓冲层作为起点横向生长半导体膜，并且形成用于覆盖掩模的横向生长层，同时在掩模的上部形成空腔; 并且在侧向生长层上外延生长器件功能层。 空腔形成步骤包括以生长速率生长半导体膜的第一步骤和用于以与第一生长速率相互不同的另一生长速率生长另一半导体膜的第二步骤，其中第一和第二步骤执行多个 时代以交替的方式。

公开(公告)号：US20080073657A1

公开(公告)日：2008-03-27

申请号：US11843916

申请日：2007-08-23

申请人： Ji-Hao Liang ,  Masahiko Tsuchiya ,  Takako Chinone ,  Masataka Kajikawa

发明人： Ji-Hao Liang ,  Masahiko Tsuchiya ,  Takako Chinone ,  Masataka Kajikawa

IPC分类号： H01L33/00

CPC分类号： H01L33/24 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/32

摘要： A nitride semiconductor light emitting device is formed by: forming a resist pattern on a first nitride semiconductor layer formed on a substrate, the resist pattern having a region whose inclination angle relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface; etching the substrate by using the resist pattern as a mask to transfer the resist pattern to the first nitride semiconductor layer; and forming an light emitting layer on the patterned first nitride semiconductor layer. The nitride semiconductor light emitting device can emit near-white light or have a wavelength range generally equivalent to or near visible light range.

摘要翻译： 氮化物半导体发光器件通过以下方式形成：在形成在衬底上的第一氮化物半导体层上形成抗蚀剂图案，该抗蚀剂图案具有相对于衬底表面倾斜的角度在垂直于 基材表面; 通过使用抗蚀剂图案作为掩模来蚀刻基板，以将抗蚀剂图案转印到第一氮化物半导体层; 以及在所述图案化的第一氮化物半导体层上形成发光层。 氮化物半导体发光器件可以发射近白光或具有大致等于或接近可见光范围的波长范围。

公开(公告)号：US20120231608A1

公开(公告)日：2012-09-13

申请号：US13416635

申请日：2012-03-09

申请人： Yasuyuki SHIBATA ,  Ji-Hao Liang ,  Takako Chinone

发明人： Yasuyuki SHIBATA ,  Ji-Hao Liang ,  Takako Chinone

IPC分类号： H01L21/20

CPC分类号： H01L21/0254 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0079

摘要： (a) Forming on a growth substrate a void-containing layer that is made of a group III nitride compound semiconductor and contains voids. (b) Forming on the void-containing layer an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids. (c) Forming on the n-type layer an active layer made of a group III nitride compound semiconductor. (d) Forming on the active layer a p-type layer made of a p-type group III nitride compound semiconductor. (e) Bonding a support substrate above the p-type layer. (f) Peeling off the growth substrate at the boundary where the void are produced. (g) Planarizing the n-type layer. Step (b) comprises (b1) forming part of the n-type layer under conditions where horizontal growth is relatively weak and (b2) forming the remaining part of the n-type layer under conditions where horizontal growth is relatively strong.

摘要翻译： （a）在生长衬底上形成由III族氮化物化合物半导体制成且含有空隙的含空隙层。 （b）在含空隙层上形成由n型III族氮化物化合物半导体制成并用于封闭空隙的n型层。 （c）在n型层上形成由III族氮化物化合物半导体制成的有源层。 （d）在有源层上形成由p型III族氮化物半导体构成的p型层。 （e）将支撑衬底粘合在p型层上。 （f）在生成空隙的边界处剥离生长衬底。 （g）平面化n型层。 步骤（b）包括（b1）在水平生长相对较弱的条件下形成n型层的一部分，（b2）在水平生长相对较强的条件下形成n型层的剩余部分。

公开(公告)号：US20120077298A1

公开(公告)日：2012-03-29

申请号：US13311644

申请日：2011-12-06

申请人： Ji-Hao LIANG ,  Masahiko Tsuchiya ,  Takako Chinone ,  Masataka Kajikawa

发明人： Ji-Hao LIANG ,  Masahiko Tsuchiya ,  Takako Chinone ,  Masataka Kajikawa

IPC分类号： H01L33/08

CPC分类号： H01L33/24 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/32

摘要： A nitride semiconductor light emitting device is formed by: forming a resist pattern on a first nitride semiconductor layer formed on a substrate, the resist pattern having a region whose inclination angle relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface; etching the substrate by using the resist pattern as a mask to transfer the resist pattern to the first nitride semiconductor layer; and forming an light emitting layer on the patterned first nitride semiconductor layer. The nitride semiconductor light emitting device can emit near-white light or have a wavelength range generally equivalent to or near visible light range.

摘要翻译： 氮化物半导体发光器件通过以下方式形成：在形成在衬底上的第一氮化物半导体层上形成抗蚀剂图案，该抗蚀剂图案具有相对于衬底表面倾斜的角度在垂直于 基材表面; 通过使用抗蚀剂图案作为掩模来蚀刻基板，以将抗蚀剂图案转印到第一氮化物半导体层; 以及在所述图案化的第一氮化物半导体层上形成发光层。 氮化物半导体发光器件可以发射近白光或具有大致等于或接近可见光范围的波长范围。