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    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20100148309A1

    公开(公告)日：2010-06-17

    申请号：US12636934

    申请日：2009-12-14

    申请人： Ji-Hao Liang ,  Takako Chinone ,  Yasuyuki Shibata ,  Jiro Higashino

    发明人： Ji-Hao Liang ,  Takako Chinone ,  Yasuyuki Shibata ,  Jiro Higashino

    IPC分类号： H01L29/20 ,  H01L21/20

    CPC分类号： H01L21/02639 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0079

    摘要： There is provided a method for manufacturing a semiconductor device in which a selective growth mask for partially covering a growth substrate is formed on a growth substrate; a buffer layer that is thicker than the mask is formed on a non-mask part not covered by the mask on the growth substrate, and a predetermined facet is exposed on the surface of the buffer layer; a semiconductor film is laterally grown using the buffer layer as a starting point, and a lateral growth layer for covering the mask is formed while cavities are formed on the upper part of the mask; and a device function layer is epitaxially grown on the lateral growth layer. The cavity formation step includes a first step for growing a semiconductor film at a growth rate and a second step for growing another semiconductor film at another growth rate mutually different from the first growth rate, wherein the first and second steps are carried out a plurality of times in alternating fashion.

    摘要翻译： 提供一种制造半导体器件的方法，其中在生长衬底上形成用于部分覆盖生长衬底的选择性生长掩模; 在生长衬底上未被掩模覆盖的非掩模部分上形成比掩模厚的缓冲层，并且在缓冲层的表面上露出预定的刻面; 使用缓冲层作为起点横向生长半导体膜，并且形成用于覆盖掩模的横向生长层，同时在掩模的上部形成空腔; 并且在侧向生长层上外延生长器件功能层。 空腔形成步骤包括以生长速率生长半导体膜的第一步骤和用于以与第一生长速率相互不同的另一生长速率生长另一半导体膜的第二步骤，其中第一和第二步骤执行多个 时代以交替的方式。

    Semiconductor light-emitting device and fabrication method thereof
    4.
    发明授权
    Semiconductor light-emitting device and fabrication method thereof 有权
    半导体发光器件及其制造方法

    公开(公告)号：US08111350B2

    公开(公告)日：2012-02-07

    申请号：US13005710

    申请日：2011-01-13

    申请人： Jiro Higashino ,  Ji-Hao Liang ,  Takako Chinone ,  Yasuyuki Shibata

    发明人： Jiro Higashino ,  Ji-Hao Liang ,  Takako Chinone ,  Yasuyuki Shibata

    IPC分类号： G02F1/1335

    CPC分类号： H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32

    摘要： A plurality of protrusions is formed on the C-plane substrate with a corundum structure. A base film made of a III-V compound semiconductor including Ga and N is formed on the surface of the substrate. The surface of the base film is flatter than the surface of the substrate. A light emitting structure including Ga and N is disposed on the base film. The protrusions are regularly arranged in a first direction that is tilted by less than 15 degrees with respect to the a-axis of the base film and in a second direction that is orthogonal to the first direction. Each protrusion has two first parallel sides tilted by less than 15 degrees relative to an m-axis and two second parallel sides tilted by less than 15 degrees relative to the a-axis. An interval between the two second sides is wider than an interval between the two first sides.

    摘要翻译： 在具有刚玉结构的C面基板上形成多个突起。 在基板的表面上形成由包含Ga和N的III-V族化合物半导体制成的基膜。 基膜的表面比基材的表面更平坦。 包含Ga和N的发光结构设置在基膜上。 突起规则地布置在相对于基膜的a轴倾斜小于15度并且在与第一方向正交的第二方向上倾斜的第一方向上。 每个突起具有相对于m轴倾斜小于15度的两个第一平行边和相对于a轴倾斜小于15度的两个第二平行边。 两个第二侧之间的间隔比两个第一侧之间的间隔宽。

    Method for manufacturing semiconductor device
    5.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08008170B2

    公开(公告)日：2011-08-30

    申请号：US12636934

    申请日：2009-12-14

    申请人： Ji-Hao Liang ,  Takako Chinone ,  Yasuyuki Shibata ,  Jiro Higashino

    发明人： Ji-Hao Liang ,  Takako Chinone ,  Yasuyuki Shibata ,  Jiro Higashino

    IPC分类号： H01L21/36 ,  H01L21/20 ,  H01L29/04 ,  H01L31/036 ,  H01L33/00

    CPC分类号： H01L21/02639 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0079

    摘要： There is provided a method for manufacturing a semiconductor device in which a selective growth mask for partially covering a growth substrate is formed on a growth substrate; a buffer layer that is thicker than the mask is formed on a non-mask part not covered by the mask on the growth substrate, and a predetermined facet is exposed on the surface of the buffer layer; a semiconductor film is laterally grown using the buffer layer as a starting point, and a lateral growth layer for covering the mask is formed while cavities are formed on the upper part of the mask; and a device function layer is epitaxially grown on the lateral growth layer. The cavity formation step includes a first step for growing a semiconductor film at a growth rate and a second step for growing another semiconductor film at another growth rate mutually different from the first growth rate, wherein the first and second steps are carried out a plurality of times in alternating fashion.

    摘要翻译： 提供一种制造半导体器件的方法，其中在生长衬底上形成用于部分覆盖生长衬底的选择性生长掩模; 在生长衬底上未被掩模覆盖的非掩模部分上形成比掩模厚的缓冲层，并且在缓冲层的表面上露出预定的刻面; 使用缓冲层作为起点横向生长半导体膜，并且形成用于覆盖掩模的横向生长层，同时在掩模的上部形成空腔; 并且在侧向生长层上外延生长器件功能层。 空腔形成步骤包括以生长速率生长半导体膜的第一步骤和用于以与第一生长速率相互不同的另一生长速率生长另一半导体膜的第二步骤，其中第一和第二步骤执行多个 时代以交替的方式。