摘要:
The digital electronic circuit (1) comprises a logic cell (2) for processing data (82), a flip-flop (3) for storing data (83) processed in the logic cell (2), a power supply (4), and a clock (5) for triggering the flip-flop (3). The logic cell (2) is disconnected from the power supply (4) when the clock (5) is not active, as it is not needed for memorizing of the flip-flop states, and connected with the power supply (4) when the clock (5) is enabled. For switching the power supply, a switch (7) switched by the clock enable (6) is arranged between the logic cell (2) and the power supply (4). Such a simple additional switch (7) occupies only a relatively small area on the chip, but permits a drastic reduction by about 90% of the leakage currents. The circuit (1) is especially suitable for a decimation of leakage currents in sub-micron process design and may be used for instance in mobile telecommunication devices.
摘要:
The digital electronic circuit (1) includes a logic cell (2) for processing data (82) , a flip-flop (3) for storing data (83) processed in the logic cell (2), a power supply (4), and a clock (5) for triggering the flip-flop (3) . The logic cell (2) is disconnected from the power supply (4) when the clock (5) is not active, as it is not needed for memorizing of the flip-flop states, and connected with the power supply (4) when the clock (5) is enabled. For switching the power supply, a switch (7) switched by the clock enable (6) is arranged between the logic cell (2) and the power supply (4). Such a simple additional switch (7) occupies only a relatively small area on the chip, but permits a drastic reduction by about 90% of the leakage currents. The circuit (1) is especially design and may be used for instance in mobile telecommunication devices.
摘要:
The invention is a method and a computer program product for checking an integrated circuit for electrostatic discharge (ESD) robustness at the design level and comprises essentially the check of the layout of the integrated circuit against a set of rules defining one or more transistor geometric and/or electrical and/or material values and generating an output or report of this check. This method can check automatically a complete IC design layout at any design level. An exemplary design is an ESD protection layout, a design block or a complete IC design.
摘要:
Integrated circuit (20) comprising several different voltage rails (V5 to V1) and an on-chip ESD protection circuit. The ESD protection circuit comprises at least one group (21, 22, 23) of ESD clamp devices (C1-C4). The ESD clamp devices (C1-C4) are arranged in a ladder-configuration. This ladder-configuration is characterized in that there is one of the ESD clamp devices interposed between each of the power rails (V5 to V1) and the respective power rail having a next lower voltage. Due to this arrangement an ESD current path is defined between each one of the power rails and the power rail having the next lower voltage. The ESD clamp devices (C1-C4) are off under normal power operation of the integrated circuit (20).
摘要:
Integrated circuit (20) comprising several different voltage rails (V5 to V1) and an on-chip ESD protection circuit. The ESD protection circuit comprises at least one group (21, 22, 23) of ESD clamp devices (C1-C4). The ESD clamp devices (C1-C4) are arranged in a ladder-configuration. This ladder-configuration is characterized in that there is one of the ESD clamp devices interposed between each of the power rails (V5 to V1) and the respective power rail having a next lower voltage. Due to this arrangement an ESD current path is defined between each one of the power rails and the power rail having the next lower voltage. The ESD clamp devices (C1-C4) are off under normal power operation of the integrated circuit (20).