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公开(公告)号:US07629270B2
公开(公告)日:2009-12-08
申请号:US11212503
申请日:2005-08-24
申请人: Johan Swerts , Hilde De Witte , Jan Willem Maes , Christophe F. Pomarede , Ruben Haverkort , Yuet Mei Wan , Marinus J. De Blank , Cornelius A. Van Der Jeugd , Jacobus Johannes Beulens
发明人: Johan Swerts , Hilde De Witte , Jan Willem Maes , Christophe F. Pomarede , Ruben Haverkort , Yuet Mei Wan , Marinus J. De Blank , Cornelius A. Van Der Jeugd , Jacobus Johannes Beulens
IPC分类号: H01L21/31
CPC分类号: H01L21/28194 , C23C16/345 , C23C16/452 , C23C16/45523 , C23C16/45578 , C23C16/515 , H01L21/02381 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/28202 , H01L21/28211 , H01L21/3141 , H01L21/3144 , H01L21/3145 , H01L21/3148 , H01L21/3185 , H01L29/518
摘要: A nitrogen precursor that has been activated by exposure to a remotely excited species is used as a reactant to form nitrogen-containing layers. The remotely excited species can be, e.g., N2, Ar, and/or He, which has been excited in a microwave radical generator. Downstream of the microwave radical generator and upstream of the substrate, the flow of excited species is mixed with a flow of NH3. The excited species activates the NH3. The substrate is exposed to both the activated NH3 and the excited species. The substrate can also be exposed to a precursor of another species to form a compound layer in a chemical vapor deposition. In addition, already-deposited layers can be nitrided by exposure to the activated NH3 and to the excited species, which results in higher levels of nitrogen incorporation than plasma nitridation using excited N2 alone, or thermal nitridation using NH3 alone, with the same process temperatures and nitridation durations.
摘要翻译: 通过暴露于远程激发的物质而活化的氮前体被用作形成含氮层的反应物。 远程激发的物质可以是例如已经在微波自由基发生器中激发的N 2,Ar和/或He。 在微波自由基发生器的下游和衬底的上游,受激物质的流动与NH 3流混合。 激发的物质激活NH3。 底物暴露于活化的NH 3和被激发的物质。 衬底也可以暴露于另一物质的前体,以在化学气相沉积中形成化合物层。 此外,已经沉积的层可以通过暴露于活化的NH 3和被激发的物质而被氮化,这导致比等离子体氮化更高的氮掺入水平,使用单独的使用激发的N 2,或者使用单独的NH 3进行热氮化,具有相同的工艺温度 和氮化时间。
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公开(公告)号:US07294582B2
公开(公告)日:2007-11-13
申请号:US11213449
申请日:2005-08-25
申请人: Ruben Haverkort , Yuet Mei Wan , Marinus J. De Blank , Cornelius A. van der Jeugd , Jacobus Johannes Beulens , Michael A. Todd , Keith D. Weeks , Christian J. Werkhoven , Christophe F. Pomarede
发明人: Ruben Haverkort , Yuet Mei Wan , Marinus J. De Blank , Cornelius A. van der Jeugd , Jacobus Johannes Beulens , Michael A. Todd , Keith D. Weeks , Christian J. Werkhoven , Christophe F. Pomarede
IPC分类号: H01L21/31 , H01L21/469
CPC分类号: H01L21/0217 , C23C16/24 , C23C16/345 , C23C16/4408 , C23C16/45523 , C23C16/56 , H01L21/02329 , H01L21/0234 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/3144 , H01L21/3185
摘要: Sequential processes are conducted in a batch reaction chamber to form ultra high quality silicon-containing compound layers, e.g., silicon nitride layers, at low temperatures. Under reaction rate limited conditions, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. Trisilane flow is interrupted. A silicon nitride layer is then formed by nitriding the silicon layer with nitrogen radicals, such as by pulsing the plasma power (remote or in situ) on after a trisilane step. The nitrogen radical supply is stopped. Optionally non-activated ammonia is also supplied, continuously or intermittently. If desired, the process is repeated for greater thickness, purging the reactor after each trisilane and silicon compounding step to avoid gas phase reactions, with each cycle producing about 5-7 angstroms of silicon nitride.
摘要翻译: 在间歇反应室中进行连续工艺,以在低温下形成超高质量的含硅化合物层,例如氮化硅层。 在反应速率有限的条件下,使用丙硅烷作为硅前体在基板上沉积硅层。 三氯甲烷流动中断。 然后通过用氮自由基氮化硅层来形成氮化硅层,例如通过在丙硅烷步骤之后脉冲等离子体功率(远程或原位)而形成。 停止氮气供应。 任选地,还可以连续或间歇地提供非活化氨。 如果需要,重复该过程以获得更大的厚度,在每个丙硅烷和硅化合步骤之后清洗反应器以避免气相反应,每个循环产生约5-7埃的氮化硅。
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公开(公告)号:US07732350B2
公开(公告)日:2010-06-08
申请号:US11634043
申请日:2006-12-04
申请人: Albert Hasper , Gert-Jan Snijders , Lieve Vandezande , Marinus J. De Blank , Radko Gerard Bankras
发明人: Albert Hasper , Gert-Jan Snijders , Lieve Vandezande , Marinus J. De Blank , Radko Gerard Bankras
IPC分类号: H01L21/469
CPC分类号: H01L21/28562 , C23C16/34 , C23C16/45527 , C23C16/45546 , H01L21/28556
摘要: Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.
摘要翻译: 使用氯化钛(TiCl 4)和氨(NH 3)作为前体在间歇反应器中形成氮化钛(TiN)膜。 TiCl4在时间上分离的脉冲中流入反应器。 NH 3还可以在与TiCl 4脉冲交替的时间间隔的脉冲中流入反应器,或者NH 3可以连续流入反应器中,同时以脉冲引入TiCl 4。 所得到的TiN膜具有低电阻率和均匀性。
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公开(公告)号:US07966969B2
公开(公告)日:2011-06-28
申请号:US11096861
申请日:2005-03-31
申请人: Albert Hasper , Gert-Jan Snijders , Lieve Vandezande , Marinus J. De Blank , Radko Gerard Bankras
发明人: Albert Hasper , Gert-Jan Snijders , Lieve Vandezande , Marinus J. De Blank , Radko Gerard Bankras
CPC分类号: H01L21/28562 , C23C16/34 , C23C16/45527 , C23C16/45546 , H01L21/28556
摘要: Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.
摘要翻译: 使用氯化钛(TiCl 4)和氨(NH 3)作为前体在间歇反应器中形成氮化钛(TiN)膜。 TiCl4在时间上分离的脉冲中流入反应器。 NH 3还可以在与TiCl 4脉冲交替的时间间隔的脉冲中流入反应器,或者NH 3可以连续流入反应器中,同时以脉冲引入TiCl 4。 所得到的TiN膜具有低电阻率和均匀性。
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