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    Producing a Marker Pattern and Measurement of an Exposure-Related Property of an Exposure Apparatus
    3.
    发明申请
    Producing a Marker Pattern and Measurement of an Exposure-Related Property of an Exposure Apparatus 审中-公开
    产生曝光装置的曝光相关性质的标记图案和测量

    公开(公告)号：US20100328636A1

    公开(公告)日：2010-12-30

    申请号：US12817315

    申请日：2010-06-17

    申请人： Johannes Anna Quaedackers ,  Paul Christiaan Hinnen ,  Eddy Cornelis Antonius Van Der Heijden ,  Michel Franciscus Johannes Van Rooy ,  Christian Marinus Leewis

    发明人： Johannes Anna Quaedackers ,  Paul Christiaan Hinnen ,  Eddy Cornelis Antonius Van Der Heijden ,  Michel Franciscus Johannes Van Rooy ,  Christian Marinus Leewis

    IPC分类号： G03B27/42 ,  G01N21/47

    CPC分类号： G03F7/70641 ,  G03F7/70625 ,  G03F7/70683

    摘要： In order to determine whether an exposure apparatus is projecting patterns correctly, a marker pattern is used on a mask for printing a specific marker structure onto a substrate. This marker is then measured by an inspection apparatus to determine whether there are errors in exposure-related properties such as focus and dose. The projection of the marker pattern is modified so as to accentuate the production of side lobe-induced features of the marker structure relative to the production of side lobe-inducted features of the product structure. The form of the marker structure is more responsive to exposure variation than the form of the product structure to exposure variation. The marker pattern includes both primary features and secondary features that augment the side lobe arising from the primary feature to print side lobe-induced features on either side of a primary marker structure. Alternatively, the marker pattern is modified by having a different attenuation factor with respect to the product pattern. Alternatively, the marker pattern is modified by providing a marker dose different from the product dose.

    摘要翻译： 为了确定曝光装置是否正确地投影图案，在掩模上使用标记图案将特定的标记结构印刷到基板上。 然后通过检查装置测量该标记物，以确定曝光相关性质如焦点和剂量是否存在错误。 修改标记图案的投影，以便相对于产品结构的旁瓣诱​​导特征的产生来强调标记结构的旁瓣诱​​导特征的产生。 标记结构的形式比曝光变化对产品结构的形式更敏感。 标记图案包括主要特征和次要特征，其增加从主要特征产生的旁瓣以在主标记结构的任一侧上印刷侧叶引起的特征。 或者，通过相对于产品图案具有不同的衰减系数来修改标记图案。 或者，通过提供与产品剂量不同的标记剂量来修饰标记图案。

    Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
    4.
    发明授权
    Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method 有权
    检测方法和装置，光刻设备，光刻处理单元和器件制造方法

    公开(公告)号：US09182682B2

    公开(公告)日：2015-11-10

    申请号：US13140292

    申请日：2009-12-17

    申请人： Hugo Augustinus Joseph Cramer ,  Paul Christiaan Hinnen

    发明人： Hugo Augustinus Joseph Cramer ,  Paul Christiaan Hinnen

    IPC分类号： G03B27/68 ,  G03F7/20 ,  G03F1/00 ,  G03F1/44

    CPC分类号： G03F7/70683 ,  G03F1/14 ,  G03F1/44 ,  G03F7/70625 ,  G03F7/70641 ,  Y10T428/24802

    摘要： In order to determine whether an exposure apparatus is outputting the correct dose of radiation and a projection system of the exposure apparatus is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker may be measured by an inspection apparatus, such as, for example, a scatterometer to determine whether errors in focus, dose, and other related properties are present. The test pattern is arranged such that changes in focus and dose may be easily determined by measuring properties of a pattern that is exposed using the mask. The test pattern of the mask is arranged so that it gives rise to a marker pattern on the substrate surface. The marker pattern contains structures that have at least two measurable side wall angles. Asymmetry between side wall angles of a structure is related to focus (or defocus) of the exposure radiation from the exposure apparatus. The extent of defocus may thereby be determined by measuring an asymmetry in side wall angle of the printed marker pattern structures.

    摘要翻译： 为了确定曝光装置是否输出正确的辐射剂量，并且曝光装置的投影系统正确地对准辐射，在掩模上使用测试图案将特定的标记印刷到基板上。 该标记可以通过诸如散射仪的检查装置来测量，以确定是否存在焦点，剂量和其它相关属性的误差。 测试图案被布置成使得可以通过测量使用掩模曝光的图案的性质容易地确定焦点和剂量的变化。 掩模的测试图案被布置成使得其在基板表面上产生标记图案。 标记图案包含具有至少两个可测量的侧壁角度的结构。 结构的侧壁角度之间的不对称性与来自曝光设备的曝光辐射的焦点（或散焦）有关。 由此可以通过测量印刷的标记图案结构的侧壁角度的不对称来确定散焦的程度。

    Lithographic apparatus and device manufacturing method
    7.
    发明授权
    Lithographic apparatus and device manufacturing method 有权
    平版印刷设备和器件制造方法

    公开(公告)号：US07573574B2

    公开(公告)日：2009-08-11

    申请号：US10889211

    申请日：2004-07-13

    申请人： Paul Christiaan Hinnen ,  Richard Johannes Franciscus Van Haren ,  Hubertus Johannes Gertrudus Simons

    发明人： Paul Christiaan Hinnen ,  Richard Johannes Franciscus Van Haren ,  Hubertus Johannes Gertrudus Simons

    IPC分类号： G01B11/00 ,  G01B11/14 ,  G03F9/00 ,  G03C5/00 ,  G03B27/42

    CPC分类号： G03F7/70683 ,  G03F7/70283 ,  G03F7/70733

    摘要： A lithographic apparatus and method comprise an illumination system arranged to provide a radiation beam, a support structure configured to support a product patterning device and a metrology target patterning device. The product patterning device imparts a radiation beam derived from the illumination system with a product pattern in its cross-section representing features of a product device to be formed. The metrology target patterning device imparts the radiation beam with a metrology target pattern in its cross-section representing at least one metrology target. The product patterning device is separate from the metrology target patterning device. A substrate table holds a substrate. A projection system project the radiation patterned by the product patterning device and the metrology target patterning device onto a target portion of the substrate. A metrology target patterning device controller adjusts the metrology target pattern independently of the product pattern.

    摘要翻译： 光刻设备和方法包括布置成提供辐射束的照明系统，被配置为支撑产品图案形成装置的支撑结构和计量目标图案形成装置。 产品图案形成装置在其横截面中产生源自照明系统的辐射束，其产品图案表示要形成的产品装置的特征。 计量目标图案形成装置在表示至少一个度量目标的横截面中赋予具有计量目标图案的辐射束。 产品图案形成装置与测量目标图案形成装置分开。 衬底台保持衬底。 投影系统将由产品图案形成装置和计量目标图案形成装置图案化的辐射投射到基板的目标部分上。 计量目标图案形成装置控制器独立于产品图案来调节计量目标图案。

    Inspection Method for Lithography
    10.
    发明申请
    Inspection Method for Lithography 有权
    光刻检验方法

    公开(公告)号：US20120044472A1

    公开(公告)日：2012-02-23

    申请号：US13264256

    申请日：2010-05-04

    申请人： Arie Jeffrey Den Boef ,  Hugo Augustinus Joseph Cramer ,  Paul Christiaan Hinnen

    发明人： Arie Jeffrey Den Boef ,  Hugo Augustinus Joseph Cramer ,  Paul Christiaan Hinnen

    IPC分类号： G03B27/52

    CPC分类号： G03F7/70641

    摘要： A method is used to determine focus of a lithographic apparatus used in a lithographic process on a substrate. The lithographic process is used to form at least two periodic structures on the substrate. Each structure has at least one feature that has an asymmetry between opposing side wall angles that varies as a different function of the focus of the lithographic apparatus on the substrate. A spectrum produced by directing a beam of radiation onto the at least two periodic structures is measured and ratios of the asymmetries are determined. The ratios and a relationship between the focus and the side wall asymmetry for each structure is used to determine the focus of the lithographic apparatus on the substrate.

    摘要翻译： 使用一种方法来确定在光刻工艺中使用的光刻设备在基板上的焦点。 光刻工艺用于在衬底上形成至少两个周期性结构。 每个结构具有至少一个特征，其具有相对的侧壁角度之间的不对称性，所述相对侧壁角度随着光刻设备在基底上的焦点的不同功能而变化。 测量通过将辐射束引导到至少两个周期性结构上产生的光谱，并且确定不对称性的比率。 使用每个结构的焦点和侧壁不对称之间的比率和关系来确定光刻设备在基底上的焦点。