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公开(公告)号：US20090166659A1
公开(公告)日：2009-07-02
申请号：US12401832
申请日：2009-03-11
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A light emitting diode is disclosed having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a mirror layer adjacent the light emitting region of the diode. The diode includes an opening in the mirror layer beneath the geometric projection of the top ohmic contact through the diode that defines a non-contact area between the mirror layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the more transparent portions of the diode.
摘要翻译： 公开了一种发光二极管，其具有在二极管的顶表面的部分上的欧姆接触的垂直取向和与二极管的发光区相邻的镜层。 二极管包括通过二极管的顶部欧姆接触的几何投影下方的镜面层中的开口，其限定了二极管的反射镜层和发光区域之间的非接触区域，以促进电流流过而不是在 非接触区域又减少欧姆接触下方的发光复合数，并增加二极管透明部分中发光复合的数量。
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公开(公告)号：US20110284875A1
公开(公告)日：2011-11-24
申请号：US13188361
申请日：2011-07-21
IPC分类号： H01L33/34
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region, and extending to said light emitting region.
摘要翻译： 公开了一种高效率III族氮化物发光二极管。 二极管包括选自由半导体材料和导电材料组成的组的衬底，在衬底上或衬底上的III族氮化物基发光区域，以及在发光区域上或上方含有碳化硅的透镜表面，并延伸到 所述发光区域。
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公开(公告)号：US20090242918A1
公开(公告)日：2009-10-01
申请号：US12401843
申请日：2009-03-11
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A light emitting diode is disclosed that includes a conductive substrate, a bonding metal on the conductive substrate and a barrier metal layer on the bonding metal. A mirror layer is encapsulated by the barrier metal layer and is isolated from the bonding metal by the barrier layer. A p-type gallium nitride epitaxial layer is on the encapsulated mirror, an indium gallium nitride active layer is on the p-type layer, and an n-type gallium nitride layer is on the indium gallium nitride layer, and a bond pad is made to the n-type gallium nitride layer.
摘要翻译： 公开了一种发光二极管，其包括导电基板，导电基板上的接合金属和接合金属上的阻挡金属层。 镜面层被阻挡金属层封装，并通过阻挡层与结合金属隔离。 p型氮化镓外延层位于封装反射镜上，氮化铟镓有源层位于p型层上，n型氮化镓层位于铟镓氮层上，形成接合焊盘 到n型氮化镓层。
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4.发明申请公开(公告)号：US20090068774A1
公开(公告)日：2009-03-12
申请号：US12268466
申请日：2008-11-11
IPC分类号： H01L21/50
CPC分类号： H01L33/40 , H01L33/38 , H01L33/62 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： A method is disclosed for fabricating an LED The method includes providing an LED chip having an epitaxial region comprising at least a p-type layer and an n-type layer, an ohmic contact formed on at least one of the p-type layer or the n-type layer, and a bond pad formed on the ohmic contact. The bond pad has a total volume less than about 3×10−5 mm3. The LED chip is bonded to a submount via thermocompression or thermosonic bonding.
摘要翻译： 公开了一种用于制造LED的方法。该方法包括提供具有包括至少p型层和n型层的外延区域的LED芯片，形成在p型层或者p型层中的至少一个上的欧姆接触 n型层和形成在欧姆接触上的接合焊盘。 接合垫的总体积小于约3×10 -5 mm 3。 LED芯片通过热压或热超声键合键合到底座。
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5.发明申请公开(公告)号：US20100052004A1
公开(公告)日：2010-03-04
申请号：US12614700
申请日：2009-11-09
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/38 , H01L33/62 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： An LED is disclosed that includes a conductive submount, a bond pad having a total volume less than 3×10−5 mm3 conductively joined to the submount, a first ohmic contact on the bond pad opposite from the submount, an epitaxial region comprising at least a p-type layer and an n-type layer on the first ohmic contact, and an electrode to the epitaxial region opposite from the first ohmic contact.
摘要翻译： 公开了一种LED，其包括导电基座，导电接合到基座的总体积小于3×10-5mm 3的接合焊盘，在与基座相反的接合焊盘上的第一欧姆接触，至少包括外延区域 第一欧姆接触上的p型层和n型层，以及与第一欧姆接触相对的外延区的电极。
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公开(公告)号：US20090104726A1
公开(公告)日：2009-04-23
申请号：US12327882
申请日：2008-12-04
CPC分类号： H01L33/24 , H01L21/2654 , H01L33/025 , H01L33/145 , H01L33/32 , H01L33/44 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. Some embodiments include a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, wherein portions of the epitaxial region are patterned into a mesa and wherein the sidewalls of the mesa comprise a resistive Group III nitride region for electrically isolating portions of the p-n junction. In method embodiments disclosed, the resistive border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask. In some method embodiments, a mesa is formed in the epitaxial region prior to implantation. During implantation, the epiwafer is mounted at an angle such that ions are implanted directly into the sidewalls of the mesa, thereby rendering portions of the mesa semi-insulating. The epiwafer may be rotated during ion implantation.
摘要翻译： 半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结， 型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。 在p型外延层上形成金属接触层。 一些实施例包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型层形成pn结， 其中所述外延区域的部分被图案化成台面，并且其中所述台面的侧壁包括用于电绝缘所述pn结的部分的电阻性III族氮化物区域。 在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻边界。 可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。 在一些方法实施例中，在植入之前在外延区域中形成台面。 在植入期间，外延片安装成一定角度，使得离子直接注入到台面的侧壁中，从而使台面的部分半绝缘。 在离子注入期间，外延膜可以旋转。
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7.发明申请LIGHT EMITTING DIODE (LED) CONTACT STRUCTURES AND PROCESS FOR FABRICATING THE SAME 有权发光二极管（LED）接触结构和制造方法公开(公告)号：US20130299858A1
公开(公告)日：2013-11-14
申请号：US13466590
申请日：2012-05-08
IPC分类号： H01L33/62
CPC分类号： H01L33/40 , H01L33/22 , H01L33/32 , H01L33/382 , H01L2933/0016
摘要： A light emitting device includes an active layer configured to provide light emission due to carrier recombination therein, a surface on the active layer, and an electrically conductive contact structure on the surface. The contact structure includes at least one plated contact layer. The contact structure may include a sublayer that conforms to the surface roughness of the underlying surface, and the plated contact layer may be substantially free of the surface roughness of the underlying surface. The surface of the plated contact layer may be substantially planar and/or otherwise configured to reflect the light emission from the active layer. Related fabrication methods are also discussed.
摘要翻译： 发光器件包括被配置为提供由于其中的载流子复合而发光的有源层，有源层上的表面和表面上的导电接触结构。 接触结构包括至少一个电镀接触层。 接触结构可以包括符合下表面的表面粗糙度的子层，并且电镀接触层可以基本上没有下表面的表面粗糙度。 电镀接触层的表面可以是基本上平面的和/或以其它方式构造成反射来自活性层的光发射。 还讨论了相关的制造方法。
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