公开(公告)号：US4135097A

公开(公告)日：1979-01-16

申请号：US794276

申请日：1977-05-05

申请人： John L. Forneris ,  William W. Hicks ,  John H. Keller ,  Charles M. McKenna ,  James A. Seirmarco

发明人： John L. Forneris ,  William W. Hicks ,  John H. Keller ,  Charles M. McKenna ,  James A. Seirmarco

IPC分类号： H01J37/20 ,  G01Q60/00 ,  H01J37/02 ,  H01J37/244 ,  H01J37/317 ,  H01L21/265 ,  A61K27/02

CPC分类号： H01J37/026 ,  H01J37/244 ,  H01J2237/24405 ,  H01J2237/24507

摘要： In an ion beam apparatus a structure for controlling the surface potential of the target comprising an electron source adjacent to the beam for providing electrons to the beam and means between the target and source for inhibiting rectilinear radiations, i.e., electron and other particle and photon radiations between said source and said target. This prevents heating of the target by the electron source and cross-contamination between the source and the target. A further structure is provided for the measurement of the ion beam current while controlling said surface potential of the target which includes: walls adjacent to and electrically insulated from the target and surrounding the beam whereby the walls and target provide a Faraday Cage, means for introducing variable quantities of electrons into the beam within the Faraday Cage, means for measuring the target current, means for combining and measuring the target and wall currents to provide said ion beam current measurement and means for varying the quantities of introduced electrons to control the target current and thereby the target surface potential.

摘要翻译： 在离子束装置中，用于控制靶的表面电位的结构包括与光束相邻的电子源，用于向光束提供电子，并且用于抑制直线辐射的靶和源之间的装置，即电子和其它粒子和光子辐射 在所述源和所述目标之间。 这防止了电子源对靶的加热和源与靶之间的交叉污染。 提供另外的结构用于测量离子束电流，同时控制靶的表面电位，其包括：与靶相邻并与靶电绝缘并围绕光束的壁，由此壁和靶提供法拉第笼，用于引入 可变量的电子进入法拉第笼内的光束，用于测量目标电流的手段，用于组合和测量目标和壁电流以提供所述离子束电流测量的装置，以及用于改变引入的电子的量以控制目标电流的装置 从而达到目标表面电位。

公开(公告)号：US4158589A

公开(公告)日：1979-06-19

申请号：US865811

申请日：1977-12-30

申请人： John H. Keller ,  Charles M. McKenna

发明人： John H. Keller ,  Charles M. McKenna

IPC分类号： H01J27/14 ,  H01J37/08 ,  H01J37/305 ,  H01L21/302 ,  B01K1/00 ,  C23F1/02

CPC分类号： H01J37/3053 ,  H01J27/14 ,  H01J37/08

摘要： Process and apparatus for use in extracting negative ions from a plasma which is particularly useful in reactive ion etching of metals, silicon and oxides and nitrides of silicon in the manufacture of semiconductor devices. A magnetic field is employed in the apparatus and, herein, is created by a novel grid, through which negative ions pass to a surface, such as one to be etched, while free electrons are prevented from passing through the grid and out of the plasma. The novel process utilizes negative ions which have a large fraction in the atomic state.

摘要翻译： 用于从等离子体中提取负离子的方法和装置，其特别可用于半导体器件制造中的金属，硅和氧化物和氮化物的反应离子蚀刻。 在该装置中采用磁场，并且在这里由新颖的栅格产生，负离子通过该栅极传递到诸如被蚀刻的表面，同时防止自由电子通过栅极并离开等离子体 。 该新方法利用在原子状态下具有大部分的负离子。

公开(公告)号：US4149084A

公开(公告)日：1979-04-10

申请号：US847645

申请日：1977-11-01

申请人： Herbert L. Arndt, deceased ,  by Margaret L. Arndt, administratrix ,  John H. Keller ,  Charles M. McKenna ,  James R. Winnard

发明人： Herbert L. Arndt, deceased ,  by Margaret L. Arndt, administratrix ,  John H. Keller ,  Charles M. McKenna ,  James R. Winnard

IPC分类号： C23C14/48 ,  H01J37/18 ,  H01J37/317 ,  H01L21/265 ,  G01N23/00

CPC分类号： H01J37/3171 ,  H01J37/18

摘要： In an apparatus for bombarding a target with a beam of ions, an expedient is provided for maintaining the beam line and target under vacuum of 2.times.10.sup.-4 Torr. or lower pressures. The apparatus includes a mass separator, e.g., analyzing magnet adapted to provide selected ions which are to be formed into the desired beam with a trajectory along a selected axis: the target is positioned along this selected axis; the apparatus further includes: a housing extending from the mass separator to the target to enclose the axis and target within a chamber, beam defining means within said chamber traversing said axis and impeding the flow of gas through said chamber, said defining means having a beam defining opening therein at said axis to permit the passage of a selected portion of the beam toward the target, and vacuum drawing means connected to said chamber through an opening in said housing crossing said beam defining means whereby said drawing means removes gas from both sides of said beam defining means.

摘要翻译： 在用离子束束轰击靶的装置中，提供了用于将射束线和目标物保持在2x10-4托的真空下的方法。 或更低的压力。 该装置包括质量分离器，例如，分析磁体，其适于提供将被选择的离子，其将被形成为具有沿着选定轴线的轨迹的期望光束：目标沿该选定轴线定位; 该装置还包括：壳体，其从质量分离器延伸到靶材以将轴线和靶材包围在腔室内，横跨所述轴线的所述腔室内的梁限定装置，并阻止气体流过所述腔室，所述限定装置具有梁 在所述轴线处限定开口，以允许所述梁的选定部分朝向所述目标物通过;以及真空拉拔装置，其通过所述外壳中穿过所述梁限定装置的开口连接到所述腔室，由此所述拉拔装置从 所述光束限定装置。

公开(公告)号：US4383177A

公开(公告)日：1983-05-10

申请号：US219652

申请日：1980-12-24

申请人： John H. Keller ,  Charles M. McKenna

发明人： John H. Keller ,  Charles M. McKenna

IPC分类号： H01J27/08 ,  H01J27/14 ,  H01J37/08 ,  H01J27/00

CPC分类号： H01J27/14 ,  H01J37/08

摘要： A plurality of magnetic pole pieces are arranged around the external wall of a high temperature plasma confining structure. The pole pieces are positioned between permanent magnets spaced from one another and the confining structure by distances calculated to produce a minimum field toward the center of the structure with an effective containing field around the periphery of the structure. The magnets and the pole pieces are cooled. An odd number of poles are employed such that the missing pole appears as a virtual pole at the extraction slit used for forming an ion beam for ion implantation. The resulting small package multipole plasma containment functions to provide higher beam current, longer source lifetime, higher voltage stability and reduces maintenance and cleaning operations, with the permanent magnets protected from high temperature and corrosive gases.

摘要翻译： 多个磁极片布置在高温等离子体封闭结构的外壁周围。 极片位于彼此间隔开的永磁体之间，并且限制结构被计算为通过围绕结构的周边的有效包含场向结构的中心产生最小场的距离。 磁体和极片被冷却。 采用奇数极，使得缺失极在用于形成用于离子注入的离子束的提取缝处出现为虚拟极。 所产生的小封装多极等离子体容纳功能用于提供更高的射束电流，更长的源寿命，更高的电压稳定性，并减少维护和清洁操作，永磁体保护不受高温和腐蚀性气体的影响。

公开(公告)号：US4151420A

公开(公告)日：1979-04-24

申请号：US858486

申请日：1977-12-08

申请人： John H. Keller ,  Charles M. McKenna ,  James R. Winnard

发明人： John H. Keller ,  Charles M. McKenna ,  James R. Winnard

IPC分类号： H01L21/268 ,  C30B23/04 ,  C30B23/08 ,  H01J37/30 ,  H01J37/317 ,  H01L21/20 ,  H01L21/203 ,  A61K27/02

CPC分类号： C30B23/04 ,  C30B23/08 ,  H01J37/3007 ,  H01J37/3171 ,  H01J37/3178 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631

摘要： An apparatus for depositing a monocrystalline epitaxial layer of semiconductor material, e.g., silicon containing selected conductivity-determining impurities, on a semiconductor substrate comprising directing a beam of ions of said semiconductor material at the surface of the semiconductor substrate at an energy level below 0.5 Kev., and simultaneously directing a beam of the conductivity-determining impurity ions at at least a portion of the substrate surface whereby a layer of semiconductor material containing said conductivity-determining impurities is formed on said surface, and heating said layer to a temperature of at least 550.degree. C. to render said layer monocrystalline. The beams of semiconductor ions and of conductivity-determining impurity ions are preferably maintained at a high current density of at least 1 ma/cm.sup.2 at the surface of said semiconductor substrate even with a preferable relatively broad beam having diameters of up to 15 cm. Such wide beams are desirably achieved by ion beam apparatus having a high intensity source with a multi-aperture source exit plate.

摘要翻译： 一种用于在半导体衬底上沉积半导体材料的单晶外延层（例如含有选定的导电率确定杂质的硅）的装置，包括以0.5kev以下的能级指向半导体衬底的表面处的所述半导体材料的离子束 并且同时在衬底表面的至少一部分处引导导电性确定杂质离子的束，由此在所述表面上形成含有所述导电性确定杂质的半导体材料层，并将所述层加热至 至少550℃以呈现所述层单晶。 半导体离子束和电导率确定性杂质离子的光束优选在所述半导体衬底的表面处保持在至少1m 2 / cm 2的高电流密度，即使具有直径最大为15cm的优选的相对宽的光束也是如此。 这种宽光束期望地由具有多孔光源出射板的具有高强度光源的离子束装置实现。

公开(公告)号：US4179312A

公开(公告)日：1979-12-18

申请号：US962442

申请日：1978-11-20

申请人： John H. Keller ,  Charles M. McKenna ,  James R. Winnard

发明人： John H. Keller ,  Charles M. McKenna ,  James R. Winnard

IPC分类号： C30B23/04 ,  C30B23/08 ,  H01J37/30 ,  H01J37/317 ,  H01L21/20 ,  H01L21/203 ,  H01L21/263

CPC分类号： H01J37/3178 ,  C30B23/04 ,  C30B23/08 ,  H01J37/3007 ,  H01J37/3171 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/02639

摘要： A method and apparatus for depositing a monocrystalline epitaxial layer of semiconductor material, e.g., silicon containing selected conductivity-determining impurities, on a semiconductor substrate comprising directing a beam of ions of said semiconductor material at the surface of the semiconductor substrate at an energy level below 0.5 Kev., and simultaneously directing a beam of the conductivity-determining impurity ions at at least a portion of the substrate surface whereby a layer of semiconductor material containing said conductivity-determining impurities is formed on said surface, and heating said layer to a temperature of at least 550.degree. C. to render said layer monocrystalline. The beams of semiconductor ions and of conductivity-determining impurity ions are preferably maintained at a high current density of at least 1 ma/cm.sup.2 at the surface of said semiconductor substrate even with a preferable relatively broad beam having diameters of up to 15 cm. Such wide beams are desirably achieved by ion beam apparatus having a high intensity source with a multi-aperture source exit plate.

摘要翻译： 一种用于在半导体衬底上沉积半导体材料的单晶外延层（例如含有选定的导电率确定杂质的硅）的方法和装置，包括在半导体衬底的表面处将半导体材料的离子束引导到低于 并且在所述衬底表面的至少一部分同时引导导电率确定杂质离子的束，由此在所述表面上形成含有所述导电性确定杂质的半导体材料层，并将所述层加热至温度 至少550℃以使所述层单晶。 半导体离子束和电导率确定性杂质离子的光束优选在所述半导体衬底的表面处保持在至少1m 2 / cm 2的高电流密度，即使具有直径最大为15cm的优选的相对宽的光束也是如此。 这种宽光束期望地由具有多孔光源出射板的具有高强度光源的离子束装置实现。

公开(公告)号：US4146810A

公开(公告)日：1979-03-27

申请号：US865652

申请日：1977-12-29

申请人： William W. Hicks ,  John H. Keller ,  Joseph H. Koestner

发明人： William W. Hicks ,  John H. Keller ,  Joseph H. Koestner

IPC分类号： G01Q30/10 ,  H01J37/08 ,  H01J37/09 ,  H01J37/317 ,  H01L21/027 ,  H01J7/24

CPC分类号： H01J37/08 ,  H01J37/09

摘要： In an ion implantation apparatus, a beam defining member such as the acceleration plate is constructed such that the member is maintained at a temperature above the condensation point of the vapor emanating from the source of charged particles, thereby preventing the vapor from condensing on the member and providing a self-cleaning effect.

公开(公告)号：US4340461A

公开(公告)日：1982-07-20

申请号：US185831

申请日：1980-09-10

申请人： Charles J. Hendricks ,  William W. Hicks ,  John H. Keller

发明人： Charles J. Hendricks ,  William W. Hicks ,  John H. Keller

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  C23C15/00 ,  C23F1/00

CPC分类号： H01J37/32623 ,  H01J37/32633

摘要： A plasma enhancing baffle plate is employed in conjunction with the anode of an RIE system to provide uniform silicon etching. The baffle plate is conductively coupled to and provided in relatively close proximity to the anode to form a constricted chamber region between anode and baffle plate. With the constricted chamber open to the RIE chamber through aperture means in the baffle plate the total surface area of the anode is increased, such that when the system is biased to operate in an RIE mode an increase in the generation of neutral etching species is effected. Various aperture arrangements may be employed to provide different patterns of neutral etching species generation, in accordance with the peculiar characteristics of the system employed.

摘要翻译： 等离子体增强挡板与RIE系统的阳极结合使用以提供均匀的硅蚀刻。 挡板与阳极电导耦合并相对靠近地设置，以在阳极和挡板之间形成收缩室区域。 在收缩室通过挡板中的孔装置向RIE腔室开放的情况下，阳极的总表面积增加，使得当系统被偏置以在RIE模式下工作时，实现中性蚀刻物质的产生的增加 。 根据所使用的系统的特有特征，可以采用各种孔径布置来提供生成不同中性蚀刻物质的图案。

公开(公告)号：US20190061879A1

公开(公告)日：2019-02-28

申请号：US16115823

申请日：2018-08-29

申请人： John H. Keller ,  John Wallace Keller

发明人： John H. Keller ,  John Wallace Keller

IPC分类号： B63B1/20

摘要： Watercraft hulls and parts thereof are disclosed which improve hydrodynamic performance for yachts, sailboards, and other craft. Drag at the transition from displacement mode to planing mode may be reduced to be the same or less than the minimum drag experienced in planing mode. Exemplary embodiments may include a bow with a center planing surface and tunnels to either side. The bow tunnels may each end in a step. At least part of the center planing surface may be cambered. A spoiler and/or interceptor may be provided at an aft end of a camber of a planing surface. For some hulls, the bow is followed by a main lift surface which is followed by a back lift surface (from stem to stern). In the back lift surface behind the main lift surface, a tunnel surface may be provided to add longitudinal stability.

公开(公告)号：US20110030600A1

公开(公告)日：2011-02-10

申请号：US12880360

申请日：2010-09-13

申请人： John H. Keller

发明人： John H. Keller

IPC分类号： B63H9/04

CPC分类号： B63B1/20 ,  B63B1/24 ,  B63B35/7906 ,  B63B35/7926 ,  B63B2001/201 ,  B63B2001/202

摘要： A winglet in a planing hull for sailboards with longitudinal length at least three times its transverse width, or a top slot that covers at least half the winglet area, and a forward slot and or a top slot, which allows dynamic lift from both the top and bottom surface of the winglet when the board is traveling at a transition speed between displacement mode and planing mode, but at high planing speed it does not normally have lift from the top surface of the winglet. This winglet may have a camber/slope step on the planing surface. In addition the transverse section of the nose of the hull can have the shape of an upside down wing.

摘要翻译： 舷梯的舷梯，其纵向长度至少为其横向宽度的三倍，或覆盖至少一半小翼区域的顶部槽口，以及前槽和/或顶部槽口，其允许从顶部起动 并且当板在位移模式和刨削模式之间以过渡速度行进时，小翼的底表面，但是在高刨削速度下，通常不具有从小翼顶表面的升力。 该小翼可能在平面上具有弧度/坡度。 另外，船体的鼻部的横截面可以具有倒立的翼的形状。