公开(公告)号：US4149084A

公开(公告)日：1979-04-10

申请号：US847645

申请日：1977-11-01

申请人： Herbert L. Arndt, deceased ,  by Margaret L. Arndt, administratrix ,  John H. Keller ,  Charles M. McKenna ,  James R. Winnard

发明人： Herbert L. Arndt, deceased ,  by Margaret L. Arndt, administratrix ,  John H. Keller ,  Charles M. McKenna ,  James R. Winnard

IPC分类号： C23C14/48 ,  H01J37/18 ,  H01J37/317 ,  H01L21/265 ,  G01N23/00

CPC分类号： H01J37/3171 ,  H01J37/18

摘要： In an apparatus for bombarding a target with a beam of ions, an expedient is provided for maintaining the beam line and target under vacuum of 2.times.10.sup.-4 Torr. or lower pressures. The apparatus includes a mass separator, e.g., analyzing magnet adapted to provide selected ions which are to be formed into the desired beam with a trajectory along a selected axis: the target is positioned along this selected axis; the apparatus further includes: a housing extending from the mass separator to the target to enclose the axis and target within a chamber, beam defining means within said chamber traversing said axis and impeding the flow of gas through said chamber, said defining means having a beam defining opening therein at said axis to permit the passage of a selected portion of the beam toward the target, and vacuum drawing means connected to said chamber through an opening in said housing crossing said beam defining means whereby said drawing means removes gas from both sides of said beam defining means.

摘要翻译： 在用离子束束轰击靶的装置中，提供了用于将射束线和目标物保持在2x10-4托的真空下的方法。 或更低的压力。 该装置包括质量分离器，例如，分析磁体，其适于提供将被选择的离子，其将被形成为具有沿着选定轴线的轨迹的期望光束：目标沿该选定轴线定位; 该装置还包括：壳体，其从质量分离器延伸到靶材以将轴线和靶材包围在腔室内，横跨所述轴线的所述腔室内的梁限定装置，并阻止气体流过所述腔室，所述限定装置具有梁 在所述轴线处限定开口，以允许所述梁的选定部分朝向所述目标物通过;以及真空拉拔装置，其通过所述外壳中穿过所述梁限定装置的开口连接到所述腔室，由此所述拉拔装置从 所述光束限定装置。

公开(公告)号：US4151420A

公开(公告)日：1979-04-24

申请号：US858486

申请日：1977-12-08

申请人： John H. Keller ,  Charles M. McKenna ,  James R. Winnard

发明人： John H. Keller ,  Charles M. McKenna ,  James R. Winnard

IPC分类号： H01L21/268 ,  C30B23/04 ,  C30B23/08 ,  H01J37/30 ,  H01J37/317 ,  H01L21/20 ,  H01L21/203 ,  A61K27/02

CPC分类号： C30B23/04 ,  C30B23/08 ,  H01J37/3007 ,  H01J37/3171 ,  H01J37/3178 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631

摘要： An apparatus for depositing a monocrystalline epitaxial layer of semiconductor material, e.g., silicon containing selected conductivity-determining impurities, on a semiconductor substrate comprising directing a beam of ions of said semiconductor material at the surface of the semiconductor substrate at an energy level below 0.5 Kev., and simultaneously directing a beam of the conductivity-determining impurity ions at at least a portion of the substrate surface whereby a layer of semiconductor material containing said conductivity-determining impurities is formed on said surface, and heating said layer to a temperature of at least 550.degree. C. to render said layer monocrystalline. The beams of semiconductor ions and of conductivity-determining impurity ions are preferably maintained at a high current density of at least 1 ma/cm.sup.2 at the surface of said semiconductor substrate even with a preferable relatively broad beam having diameters of up to 15 cm. Such wide beams are desirably achieved by ion beam apparatus having a high intensity source with a multi-aperture source exit plate.

摘要翻译： 一种用于在半导体衬底上沉积半导体材料的单晶外延层（例如含有选定的导电率确定杂质的硅）的装置，包括以0.5kev以下的能级指向半导体衬底的表面处的所述半导体材料的离子束 并且同时在衬底表面的至少一部分处引导导电性确定杂质离子的束，由此在所述表面上形成含有所述导电性确定杂质的半导体材料层，并将所述层加热至 至少550℃以呈现所述层单晶。 半导体离子束和电导率确定性杂质离子的光束优选在所述半导体衬底的表面处保持在至少1m 2 / cm 2的高电流密度，即使具有直径最大为15cm的优选的相对宽的光束也是如此。 这种宽光束期望地由具有多孔光源出射板的具有高强度光源的离子束装置实现。

公开(公告)号：US4179312A

公开(公告)日：1979-12-18

申请号：US962442

申请日：1978-11-20

申请人： John H. Keller ,  Charles M. McKenna ,  James R. Winnard

发明人： John H. Keller ,  Charles M. McKenna ,  James R. Winnard

IPC分类号： C30B23/04 ,  C30B23/08 ,  H01J37/30 ,  H01J37/317 ,  H01L21/20 ,  H01L21/203 ,  H01L21/263

CPC分类号： H01J37/3178 ,  C30B23/04 ,  C30B23/08 ,  H01J37/3007 ,  H01J37/3171 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/02639

摘要： A method and apparatus for depositing a monocrystalline epitaxial layer of semiconductor material, e.g., silicon containing selected conductivity-determining impurities, on a semiconductor substrate comprising directing a beam of ions of said semiconductor material at the surface of the semiconductor substrate at an energy level below 0.5 Kev., and simultaneously directing a beam of the conductivity-determining impurity ions at at least a portion of the substrate surface whereby a layer of semiconductor material containing said conductivity-determining impurities is formed on said surface, and heating said layer to a temperature of at least 550.degree. C. to render said layer monocrystalline. The beams of semiconductor ions and of conductivity-determining impurity ions are preferably maintained at a high current density of at least 1 ma/cm.sup.2 at the surface of said semiconductor substrate even with a preferable relatively broad beam having diameters of up to 15 cm. Such wide beams are desirably achieved by ion beam apparatus having a high intensity source with a multi-aperture source exit plate.

摘要翻译： 一种用于在半导体衬底上沉积半导体材料的单晶外延层（例如含有选定的导电率确定杂质的硅）的方法和装置，包括在半导体衬底的表面处将半导体材料的离子束引导到低于 并且在所述衬底表面的至少一部分同时引导导电率确定杂质离子的束，由此在所述表面上形成含有所述导电性确定杂质的半导体材料层，并将所述层加热至温度 至少550℃以使所述层单晶。 半导体离子束和电导率确定性杂质离子的光束优选在所述半导体衬底的表面处保持在至少1m 2 / cm 2的高电流密度，即使具有直径最大为15cm的优选的相对宽的光束也是如此。 这种宽光束期望地由具有多孔光源出射板的具有高强度光源的离子束装置实现。

公开(公告)号：US4135097A

公开(公告)日：1979-01-16

申请号：US794276

申请日：1977-05-05

申请人： John L. Forneris ,  William W. Hicks ,  John H. Keller ,  Charles M. McKenna ,  James A. Seirmarco

发明人： John L. Forneris ,  William W. Hicks ,  John H. Keller ,  Charles M. McKenna ,  James A. Seirmarco

IPC分类号： H01J37/20 ,  G01Q60/00 ,  H01J37/02 ,  H01J37/244 ,  H01J37/317 ,  H01L21/265 ,  A61K27/02

CPC分类号： H01J37/026 ,  H01J37/244 ,  H01J2237/24405 ,  H01J2237/24507

摘要： In an ion beam apparatus a structure for controlling the surface potential of the target comprising an electron source adjacent to the beam for providing electrons to the beam and means between the target and source for inhibiting rectilinear radiations, i.e., electron and other particle and photon radiations between said source and said target. This prevents heating of the target by the electron source and cross-contamination between the source and the target. A further structure is provided for the measurement of the ion beam current while controlling said surface potential of the target which includes: walls adjacent to and electrically insulated from the target and surrounding the beam whereby the walls and target provide a Faraday Cage, means for introducing variable quantities of electrons into the beam within the Faraday Cage, means for measuring the target current, means for combining and measuring the target and wall currents to provide said ion beam current measurement and means for varying the quantities of introduced electrons to control the target current and thereby the target surface potential.

摘要翻译： 在离子束装置中，用于控制靶的表面电位的结构包括与光束相邻的电子源，用于向光束提供电子，并且用于抑制直线辐射的靶和源之间的装置，即电子和其它粒子和光子辐射 在所述源和所述目标之间。 这防止了电子源对靶的加热和源与靶之间的交叉污染。 提供另外的结构用于测量离子束电流，同时控制靶的表面电位，其包括：与靶相邻并与靶电绝缘并围绕光束的壁，由此壁和靶提供法拉第笼，用于引入 可变量的电子进入法拉第笼内的光束，用于测量目标电流的手段，用于组合和测量目标和壁电流以提供所述离子束电流测量的装置，以及用于改变引入的电子的量以控制目标电流的装置 从而达到目标表面电位。

公开(公告)号：US4158589A

公开(公告)日：1979-06-19

申请号：US865811

申请日：1977-12-30

申请人： John H. Keller ,  Charles M. McKenna

发明人： John H. Keller ,  Charles M. McKenna

IPC分类号： H01J27/14 ,  H01J37/08 ,  H01J37/305 ,  H01L21/302 ,  B01K1/00 ,  C23F1/02

CPC分类号： H01J37/3053 ,  H01J27/14 ,  H01J37/08

摘要： Process and apparatus for use in extracting negative ions from a plasma which is particularly useful in reactive ion etching of metals, silicon and oxides and nitrides of silicon in the manufacture of semiconductor devices. A magnetic field is employed in the apparatus and, herein, is created by a novel grid, through which negative ions pass to a surface, such as one to be etched, while free electrons are prevented from passing through the grid and out of the plasma. The novel process utilizes negative ions which have a large fraction in the atomic state.

摘要翻译： 用于从等离子体中提取负离子的方法和装置，其特别可用于半导体器件制造中的金属，硅和氧化物和氮化物的反应离子蚀刻。 在该装置中采用磁场，并且在这里由新颖的栅格产生，负离子通过该栅极传递到诸如被蚀刻的表面，同时防止自由电子通过栅极并离开等离子体 。 该新方法利用在原子状态下具有大部分的负离子。

公开(公告)号：US4383177A

公开(公告)日：1983-05-10

申请号：US219652

申请日：1980-12-24

申请人： John H. Keller ,  Charles M. McKenna

发明人： John H. Keller ,  Charles M. McKenna

IPC分类号： H01J27/08 ,  H01J27/14 ,  H01J37/08 ,  H01J27/00

CPC分类号： H01J27/14 ,  H01J37/08

摘要： A plurality of magnetic pole pieces are arranged around the external wall of a high temperature plasma confining structure. The pole pieces are positioned between permanent magnets spaced from one another and the confining structure by distances calculated to produce a minimum field toward the center of the structure with an effective containing field around the periphery of the structure. The magnets and the pole pieces are cooled. An odd number of poles are employed such that the missing pole appears as a virtual pole at the extraction slit used for forming an ion beam for ion implantation. The resulting small package multipole plasma containment functions to provide higher beam current, longer source lifetime, higher voltage stability and reduces maintenance and cleaning operations, with the permanent magnets protected from high temperature and corrosive gases.

摘要翻译： 多个磁极片布置在高温等离子体封闭结构的外壁周围。 极片位于彼此间隔开的永磁体之间，并且限制结构被计算为通过围绕结构的周边的有效包含场向结构的中心产生最小场的距离。 磁体和极片被冷却。 采用奇数极，使得缺失极在用于形成用于离子注入的离子束的提取缝处出现为虚拟极。 所产生的小封装多极等离子体容纳功能用于提供更高的射束电流，更长的源寿命，更高的电压稳定性，并减少维护和清洁操作，永磁体保护不受高温和腐蚀性气体的影响。

公开(公告)号：US5136171A

公开(公告)日：1992-08-04

申请号：US646361

申请日：1991-01-25

申请人： Ka-Ngo Leung ,  Wulf B. Kunkel ,  Malcom D. Williams ,  Charles M. McKenna

发明人： Ka-Ngo Leung ,  Wulf B. Kunkel ,  Malcom D. Williams ,  Charles M. McKenna

IPC分类号： H01J37/02 ,  H01J37/317

CPC分类号： H01J37/3171 ,  H01J37/026

摘要： Methods and apparatus for neutralization of a workpiece such as a semiconductor wafer in a system wherein a beam of positive ions is applied to the workpiece. The apparatus includes an electron source for generating an electron beam and a magnetic assembly for generating a magnetic field for guiding the electron beam to the workpiece. The electron beam path preferably includes a first section between the electron source and the ion beam and a second section which is coincident with the ion beam. The magnetic assembly generates an axial component of magnetic field along the electron beam path. The magnetic assembly also generates a transverse component of the magnetic field in an elbow region between the first and second sections of the electron beam path. The electron source preferably includes a large area lanthanum hexaboride cathode and an extraction grid positioned in close proximity to the cathode. The apparatus provides a high current, low energy electron beam for neutralizing charge buildup on the workpiece.

摘要翻译： 用于在其中将正离子束施加到工件的系统中的诸如半导体晶片的工件的方法和装置。 该装置包括用于产生电子束的电子源和用于产生用于将电子束引导到工件的磁场的磁性组件。 电子束路径优选地包括电子源和离子束之间的第一部分和与离子束重合的第二部分。 磁性组件沿着电子束路径产生磁场的轴向分量。 磁性组件还在电子束路径的第一和第二部分之间的肘部区域中产生磁场的横向分量。 电子源优选包括大面积六硼化镧阴极和靠近阴极定位的提取栅格。 该装置提供高电流，低能量的电子束，用于中和工件上的电荷积累。

公开(公告)号：US06998625B1

公开(公告)日：2006-02-14

申请号：US09602059

申请日：2000-06-23

申请人： Charles M. McKenna ,  Nicholas R. White ,  Douglas A. Brown ,  Edward Bell ,  Svetlana Radovanov

发明人： Charles M. McKenna ,  Nicholas R. White ,  Douglas A. Brown ,  Edward Bell ,  Svetlana Radovanov

IPC分类号： G21K5/10 ,  H01J37/08

CPC分类号： H01J37/3171 ,  H01J2237/0041 ,  H01J2237/022 ,  H01J2237/047 ,  H01J2237/31705

摘要： An ion implanter includes an ion source for generating an ion beam, an analyzer for separating unwanted components from the ion beam, a first beam transport device for transporting the ion beam through the analyzer at a first transport energy, a first deceleration stage positioned downstream of the analyzer for decelerating the ion beam from the first transport energy to a second transport energy, a beam filter positioned downstream of the first deceleration stage for separating neutral particles from the ion beam, a second beam transport device for transporting the ion beam through the beam filter at the second transport energy, a second deceleration stage positioned downstream of the beam filter for decelerating the ion beam from the second transport energy to a final energy, and a target site for supporting a target for ion implantation. The ion beam is delivered to the target site at the final energy. In a double deceleration mode, the second transport energy is greater than the final energy for highest current at low energy. In an enhanced drift mode, the second transport energy is equal to the final energy for highest beam purity at low energy.

摘要翻译： 离子注入机包括用于产生离子束的离子源，用于从离子束分离不需要的组分的分析器，用于以第一输送能量输送离子束通过分析器的第一束输送装置，位于离子束下游的第一减速阶段 用于将离子束从第一输送能量减速到第二输送能量的分析器，位于第一减速阶段下游的用于从离子束分离中性粒子的光束过滤器，用于将离子束传送通过束 在所述第二输送能量下进行过滤，所述第二减速阶段位于所述束过滤器的下游，用于将所述离子束从所述第二输送能量减速到最终能量，以及用于支撑用于离子注入的靶的靶位点。 离子束以最终能量传递到目标位置。 在双重减速模式中，第二传输能量大于最低能量时的最终能量。 在增强的漂移模式中，第二传输能量等于在低能量下最高光束纯度的最终能量。

公开(公告)号：US4757208A

公开(公告)日：1988-07-12

申请号：US837127

申请日：1986-03-07

申请人： Charles M. McKenna ,  James E. Wood ,  John L. Bartelt ,  Ross D. Olney ,  J. William Ward ,  Charles W. Slayman

发明人： Charles M. McKenna ,  James E. Wood ,  John L. Bartelt ,  Ross D. Olney ,  J. William Ward ,  Charles W. Slayman

IPC分类号： H01J37/20 ,  H01J37/08 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01L21/30

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/055 ,  H01J2237/1516 ,  H01J2237/303 ,  H01J2237/31755 ,  H01J2237/31788

摘要： A masked ion beam lithography (MIBL) system and method is disclosed which is considerably more compact and economical than prior ion implantation devices. An H.sup.+ ion beam is extracted from a source in the form of an angularly expanding beam, and is transmitted through two lenses that sequentially accelerate the ions to energies in the range of 200-300 keV. The first lens focuses the beam so that it emerges from a crossover point with an amplified angular divergence at least three times the divergence of the initial beam, thereby considerably reducing the necessary column length. The second lens collimates the beam so that it can be directed onto a mask to expose resist on an underlying semiconductor substrate. A series of extraction electrodes are used to provide an initial point source beam with a desired angular expansion, and a specially designed sector magnet is positioned between the extraction mechanism and the first lens to remove particles heavier than H.sup.+ from the beam. Voltage ratios across the lenses and extraction electrodes can be varied in tandem, permitting control over the final beam energy by a simple voltage adjustment. The beam is aligned with the column axis and then steered into alignment with the mask channeling axis by a pair of octupole lenses.

摘要翻译： 公开了掩蔽离子束光刻（MIBL）系统和方法，其比先前的离子注入装置更紧凑和经济。 H +离子束以角度扩展的光束形式从光源中提取出来，并通过两个透镜传播，该透镜将离子依次加速到200-300keV范围内的能量。 第一透镜聚焦光束，使得其从具有放大的角度发散的交叉点出现至少是初始光束的发散的三倍，从而显着地减少必要的色谱柱长度。 第二透镜使光束准直，使得其可以被引导到掩模上以在下面的半导体衬底上曝光抗蚀剂。 一系列提取电极用于提供具有所需角度膨胀的初始点源光束，并且特殊设计的扇形磁体位于提取机构和第一透镜之间，以从光束去除比H +更重的颗粒。 透镜和引出电极之间的电压比可以串联变化，允许通过简单的电压调节来控制最终的束能量。 光束与列轴对准，然后通过一对八极透镜转向与掩模引导轴对准。

公开(公告)号：US4556798A

公开(公告)日：1985-12-03

申请号：US512879

申请日：1983-07-12

申请人： Charles M. McKenna ,  William M. Clark, Jr. ,  Robert L. Seliger

发明人： Charles M. McKenna ,  William M. Clark, Jr. ,  Robert L. Seliger

IPC分类号： H01J37/317 ,  H01J37/30 ,  H01J37/305 ,  H01L21/027 ,  H01L21/30

CPC分类号： H01J37/3007

摘要： Two lens focused ion beam column (10) has an accelerating lens (20) which carries a potential to focus an image of the liquid metal ion source (14) on the mass analyzer slit (26) with a magnification of about unity. Munro lens (36) accelerates the beam of selected ion species and demagnifies the image through a long working distance to provide an ion writing spot of less than about 1000 .ANG. size.

摘要翻译： 两个透镜聚焦离子束柱（10）具有加速透镜（20），该加速透镜具有将液体金属离子源（14）的图像以大致一致的放大率聚焦在质量分析器狭缝（26）上的潜力。 Munro透镜（36）加速选定离子种类的光束，并通过长工作距离使图像缩小，以提供小于约1000 ANGSTROM大小的离子写入点。