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    Method for removing material from semiconductor wafer and apparatus for performing the same
    6.
    发明申请
    Method for removing material from semiconductor wafer and apparatus for performing the same 失效
    从半导体晶片去除材料的方法及其执行方法

    公开(公告)号：US20070000518A1

    公开(公告)日：2007-01-04

    申请号：US11174080

    申请日：2005-06-30

    申请人： Mikhail Korolik ,  Michael Ravkin ,  John deLarios ,  Fritz Redeker ,  John Boyd

    发明人： Mikhail Korolik ,  Michael Ravkin ,  John deLarios ,  Fritz Redeker ,  John Boyd

    IPC分类号： B08B3/04

    CPC分类号： H01L21/67051 ,  G03F7/422 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/6704 ,  Y10S134/902

    摘要： A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.

    摘要翻译： 压力保持在其中半导体晶片所处于的体积内的压力足以将前体流体的液体状态保持为非牛顿流体。 前体流体靠近要从半导体晶片去除的材料设置，同时保持前体流体处于液态。 在半导体晶片所在的体积中的压力降低，使得设置在体积内的晶片上的前体流体被转化成非牛顿流体。 在转化成非牛顿流体期间，前体流体的膨胀和前体流体相对于晶片的移动导致所得到的非牛顿流体从半导体晶片中去除材料。

    INTEGRATED TOOL SETS AND PROCESS TO KEEP SUBSTRATE SURFACE WET DURING PLATING AND CLEAN IN FABRICATION OF ADVANCED NANO-ELECTRONIC DEVICES
    7.
    发明申请
    INTEGRATED TOOL SETS AND PROCESS TO KEEP SUBSTRATE SURFACE WET DURING PLATING AND CLEAN IN FABRICATION OF ADVANCED NANO-ELECTRONIC DEVICES 审中-公开
    综合工具集和工艺在高级纳米电子设备制造过程中保护基底表面湿润清洗和清洁

    公开(公告)号：US20110143553A1

    公开(公告)日：2011-06-16

    申请号：US12965765

    申请日：2010-12-10

    申请人： Yaxin Wang ,  Shijian Li ,  Fritz Redeker ,  John Parks ,  Artur Kolics ,  Hyungsuk Alexander Yoon ,  Tarek Suwwan de Felipe ,  Mikhail Korolik

    发明人： Yaxin Wang ,  Shijian Li ,  Fritz Redeker ,  John Parks ,  Artur Kolics ,  Hyungsuk Alexander Yoon ,  Tarek Suwwan de Felipe ,  Mikhail Korolik

    IPC分类号： H01L21/469 ,  B05C3/02 ,  B05C11/00 ,  B05C11/02

    CPC分类号： H01L21/288 ,  C23C18/1642 ,  C23C18/1689 ,  C23C18/1872 ,  H01L21/76849

    摘要： Methods and systems for handling a substrate through processes including an integrated electroless deposition process includes processing a surface of the substrate in an electroless deposition module to deposit a layer over conductive features of the substrate using a deposition fluid. The surface of the substrate is then rinsed in the electroless deposition module with a rinsing fluid. The rinsing is controlled to prevent de-wetting of the surface so that a transfer film defined from the rinsing fluid remains coated over the surface of the substrate. The substrate is removed from the electroless deposition module while maintaining the transfer film over the surface of the substrate. The transfer film over the surface of the substrate prevents drying of the surface of the substrate so that the removing is wet. The substrate, once removed from the electroless deposition module, is moved into a post-deposition module while maintaining the transfer film over the surface of the substrate.

    摘要翻译： 用于通过包括集成无电沉积工艺的工艺处理衬底的方法和系统包括在无电沉积模块中处理衬底的表面以使用沉积流体在衬底的导电特征上沉积层。 然后用清洗液在无电沉积模块中冲洗基材的表面。 控制冲洗以防止表面的脱湿，使得从冲洗流体限定的转印膜保持涂覆在基材的表面上。 将基底从无电沉积模块移除，同时将转印膜保持在衬底的表面上。 衬底表面上的转印膜防止了衬底表面的干燥，使得去除被弄湿。 一旦从无电镀沉积模块中取出的衬底被移动到后沉积模块中，同时将转印膜保持在衬底的表面上。

    Apparatuses and methods for cleaning a substrate
    8.
    发明申请
    Apparatuses and methods for cleaning a substrate 失效
    用于清洁基底的装置和方法

    公开(公告)号：US20050133061A1

    公开(公告)日：2005-06-23

    申请号：US10816337

    申请日：2004-03-31

    申请人： John de Larios ,  Aleksander Owczarz ,  Alan Schoepp ,  Fritz Redeker

    发明人： John de Larios ,  Aleksander Owczarz ,  Alan Schoepp ,  Fritz Redeker

    IPC分类号： B08B3/00 ,  H01L21/00 ,  B08B1/02

    CPC分类号： B08B3/003 ,  H01L21/67028 ,  H01L21/67046 ,  Y10S134/902

    摘要： An apparatus for use in processing a substrate includes a brush enclosure extending over a length. The brush enclosure is configured to be disposed over a surface of the substrate and has an open region that is configured to be disposed in proximity to the substrate. The open region extends over the length of the brush enclosure and enables foam from within the brush enclosure to contact the surface of the substrate. A substrate cleaning system and method for cleaning a substrate are also described.

    摘要翻译： 用于处理衬底的装置包括在一定长度上延伸的刷子外壳。 电刷外壳被配置为设置在基板的表面上方，并且具有被配置为设置在基板附近的开放区域。 开放区域在刷子外壳的长度上延伸，并使来自刷子外壳内的泡沫能够接触基板的表面。 还描述了用于清洁衬底的衬底清洁系统和方法。

    METHODS FOR DRYING SEMICONDUCTOR WAFER SURFACES USING A PLURALITY OF INLETS AND OUTLETS HELD IN CLOSE PROXIMITY TO THE WAFER SURFACES
    9.
    发明申请
    METHODS FOR DRYING SEMICONDUCTOR WAFER SURFACES USING A PLURALITY OF INLETS AND OUTLETS HELD IN CLOSE PROXIMITY TO THE WAFER SURFACES 失效
    使用大量入口和出口将半导体波形表面干燥的方法保持在接近于波长表面的距离

    公开(公告)号：US20070218653A1

    公开(公告)日：2007-09-20

    申请号：US11750960

    申请日：2007-05-18

    申请人： John de Larios ,  Mike Ravkin ,  Carl Woods ,  Fritz Redeker ,  James Garcia

    发明人： John de Larios ,  Mike Ravkin ,  Carl Woods ,  Fritz Redeker ,  James Garcia

    IPC分类号： H01L21/02

    CPC分类号： H01L21/67051 ,  B08B3/04 ,  G03F7/30 ,  H01L21/67028 ,  H01L21/67034 ,  Y10S134/902

    摘要： Methods for processing substrate through a head that is configured to be placed in close non-contact proximity to a surface of a substrate are provided. One method includes applying a first fluid onto the surface of the substrate from conduits in the head when the head is in close proximity to the surface of the substrate and removing the first fluid from the surface of the substrate. The removing is processed just as first fluid is applied to the surface of the substrate, and the removing ensures that the applied first fluid is contained between a surface of the head and the surface of the substrate and the first fluid being applied and removed defines a controlled meniscus. The method further includes moving the controlled meniscus over different regions of the surface of the substrate when movement of the head or the substrate is dictated. The moving of the controlled meniscus enables processing of part or all of the surface of the substrate using the first fluid.

    摘要翻译： 提供了通过头部处理基板的方法，该头被配置为与基板的表面紧密非接触地放置。 一种方法包括当头部紧邻衬底的表面并从衬底的表面去除第一流体时，将第一流体施加到衬底表面上的管道中。 当第一流体被施加到基板的表面上时，移除被处理，并且移除确保所施加的第一流体被包含在头部的表面和基底的表面之间，并且被施加和移除的第一流体限定了 受控半月板 所述方法还包括当限制头部或基底的运动时，将受控弯液面移动到衬底的表面的不同区域上。 受控弯液面的移动使得能够使用第一流体处理基板的部分或全部表面。

    Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids
    10.
    发明授权
    Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids 失效
    使用压缩和/或加压泡沫，气泡和/或液体清洁半导体晶片的方法和设备

    公开(公告)号：US08535451B2

    公开(公告)日：2013-09-17

    申请号：US12240300

    申请日：2008-09-29

    申请人： John M. de Larios ,  Mike Ravkin ,  Jeffrey Farber ,  Mikhail Korolik ,  Fritz Redeker ,  Aleksander Owczarz

    发明人： John M. de Larios ,  Mike Ravkin ,  Jeffrey Farber ,  Mikhail Korolik ,  Fritz Redeker ,  Aleksander Owczarz

    IPC分类号： B08B1/04

    CPC分类号： B08B3/003 ,  H01L21/67028 ,  H01L21/67046 ,  Y10S134/902

    摘要： An apparatus and method are disclosed in which a semiconductor substrate having a surface containing contaminants is cleaned or otherwise subjected to chemical treatment using a foam. The semiconductor wafer is supported either on a stiff support (or a layer of foam) and foam is provided on the opposite surface of the semiconductor wafer while the semiconductor wafer is supported. The foam contacting the semiconductor wafer is pressurized using a form to produce a jammed foam. Relative movement between the form and the semiconductor wafer. such as oscillation parallel and/or perpendicular to the top surface of the semiconductor wafer. is then induced while the jammed foam is in contact with the semiconductor wafer to remove the undesired contaminants and/or otherwise chemically treat the surface of the semiconductor wafer using the foam.

    摘要翻译： 公开了一种装置和方法，其中具有含有污染物的表面的半导体衬底被清洁或以其它方式用泡沫进行化学处理。 半导体晶片被支撑在刚性支撑件（或泡沫层）上，并且在半导体晶片被支撑的同时在半导体晶片的相对表面上提供泡沫。 接触半导体晶片的泡沫使用形式加压以产生卡住的泡沫。 形式与半导体晶圆之间的相对移动。 例如平行于和/或垂直于半导体晶片的顶表面的振荡。 然后在卡住的泡沫与半导体晶片接触的同时引发，以除去不期望的污染物和/或以其它方式化学处理使用泡沫的半导体晶片的表面。