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公开(公告)号：US20090101893A1
公开(公告)日：2009-04-23
申请号：US12143676
申请日：2008-06-20
CPC分类号： H01L51/0516 , H01L51/0541 , H01L51/0545 , H01L51/0558
摘要： A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region.
摘要翻译： 一种形成有机薄膜晶体管的方法，该晶体管包括其间具有沟道区的源极和漏极，栅电极，设置在源电极和漏电极之间的电介质层和栅电极，以及设置在至少沟道区中的有机半导体 在所述源极和漏极之间，所述方法包括：在所述有机半导体沉积之前，在所述沟道区中的结晶部位的表面接种; 以及将有机半导体沉积到接种的表面上，由此有机半导体在结晶位置处结晶，形成沟道区中的晶畴。
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公开(公告)号：US07867813B2
公开(公告)日：2011-01-11
申请号：US12143676
申请日：2008-06-20
IPC分类号： H01L51/40
CPC分类号： H01L51/0516 , H01L51/0541 , H01L51/0545 , H01L51/0558
摘要： A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region.
摘要翻译： 一种形成有机薄膜晶体管的方法，该晶体管包括其间具有沟道区的源极和漏极，栅电极，设置在源电极和漏电极之间的电介质层和栅电极，以及设置在至少沟道区中的有机半导体 在所述源极和漏极之间，所述方法包括：在所述有机半导体沉积之前，在所述沟道区中的结晶部位的表面接种; 以及将有机半导体沉积到接种的表面上，由此有机半导体在结晶位置处结晶，形成沟道区中的晶畴。
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公开(公告)号：US08502356B2
公开(公告)日：2013-08-06
申请号：US12987724
申请日：2011-01-10
CPC分类号： H01L51/0516 , H01L51/0541 , H01L51/0545 , H01L51/0558
摘要： A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region.
摘要翻译： 一种形成有机薄膜晶体管的方法，该晶体管包括其间具有沟道区的源极和漏极，栅电极，设置在源电极和漏电极之间的电介质层和栅电极，以及设置在至少沟道区中的有机半导体 在所述源极和漏极之间，所述方法包括：在所述有机半导体沉积之前，在所述沟道区中的结晶部位的表面接种; 以及将有机半导体沉积到接种的表面上，由此有机半导体在结晶位置处结晶，形成沟道区中的晶畴。
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公开(公告)号：US20110101323A1
公开(公告)日：2011-05-05
申请号：US12987724
申请日：2011-01-10
IPC分类号： H01L51/00
CPC分类号： H01L51/0516 , H01L51/0541 , H01L51/0545 , H01L51/0558
摘要： A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region.
摘要翻译： 一种形成有机薄膜晶体管的方法，该晶体管包括其间具有沟道区的源极和漏极，栅电极，设置在源电极和漏电极之间的电介质层和栅电极，以及设置在至少沟道区中的有机半导体 在所述源极和漏极之间，所述方法包括：在所述有机半导体沉积之前，在所述沟道区中的结晶部位的表面接种; 以及将有机半导体沉积到接种的表面上，由此有机半导体在结晶位置处结晶，形成沟道区中的晶畴。
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公开(公告)号：US20100032662A1
公开(公告)日：2010-02-11
申请号：US12529286
申请日：2008-04-03
申请人： Gregory Whiting , Jonathan J. Halls
发明人： Gregory Whiting , Jonathan J. Halls
IPC分类号： H01L51/10 , H01L21/336
CPC分类号： H01L51/052 , H01L51/0018 , H01L51/0541 , H01L51/0545
摘要： A method of forming an organic thin film transistor comprising: providing a structure comprising source and drain electrodes with a channel region therebetween, a gate electrode, and a dielectric layer disposed between the source and drain electrodes and the gate electrode; and patterning the dielectric layer using the source and drain electrodes as a mask to form a region of dielectric material in the channel region which is thinner than regions of dielectric material adjacent the channel region.
摘要翻译： 一种形成有机薄膜晶体管的方法，包括：提供包括源极和漏极之间的沟道区的结构，栅电极和设置在源电极和漏电极与栅电极之间的电介质层; 以及使用源电极和漏电极作为掩模对电介质层进行构图，以在沟道区域中形成电介质材料的区域，其比邻近沟道区的电介质材料区域薄。
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公开(公告)号：US20110053314A1
公开(公告)日：2011-03-03
申请号：US12866691
申请日：2009-02-06
IPC分类号： H01L51/40
CPC分类号： H01L51/0541 , H01L27/283 , H01L51/0017
摘要： The present invention provides a method of fabricating a top-gate organic semiconductor transistor comprising: providing a substrate; depositing a source and drain electrode over the substrate; depositing an organic semiconductor material in a channel between the source and drain electrode and over at least a portion of the source and drain electrodes; depositing a dielectric material over the organic semiconductor material; depositing a gate electrode over the dielectric material and organic semiconductor material in the channel; removing a portion of the dielectric material and organic semiconductor material, wherein the gate electrode acts as a mask to shield the underlying organic semiconductor material and dielectric material during the step of removing.
摘要翻译： 本发明提供一种制造顶栅有机半导体晶体管的方法，包括：提供衬底; 在所述衬底上沉积源极和漏极; 将有机半导体材料沉积在源电极和漏电极之间的沟道中以及在源电极和漏电极的至少一部分上方; 在所述有机半导体材料上沉积电介质材料; 在沟道中的电介质材料和有机半导体材料上沉积栅电极; 去除介电材料和有机半导体材料的一部分，其中栅极用作掩模以在去除步骤期间屏蔽下面的有机半导体材料和电介质材料。
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公开(公告)号：US20110127504A1
公开(公告)日：2011-06-02
申请号：US12935573
申请日：2009-02-25
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L51/052 , H01L51/0529 , H01L51/0537 , H01L51/0541 , H01L51/0545
摘要： An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode disposed over the substrate with a channel region therebetween; a layer of organic semiconductor disposed in the channel region; a gate electrode; and a gate dielectric disposed between the layer of organic semiconductor and the gate electrode, wherein the gate dielectric comprises a cross-linked polymer and a fluorine containing polymer.
摘要翻译： 一种有机薄膜晶体管，包括：基板; 源电极和漏极，设置在衬底上，沟道区域在其之间; 布置在沟道区域中的有机半导体层; 栅电极; 以及设置在所述有机半导体层与所述栅极电极之间的栅极电介质，其中所述栅极电介质包含交联聚合物和含氟聚合物。
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公开(公告)号：US08735871B2
公开(公告)日：2014-05-27
申请号：US12935573
申请日：2009-02-25
IPC分类号： H01L35/24
CPC分类号： H01L51/052 , H01L51/0529 , H01L51/0537 , H01L51/0541 , H01L51/0545
摘要： An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode disposed over the substrate with a channel region therebetween; a layer of organic semiconductor disposed in the channel region; a gate electrode; and a gate dielectric disposed between the layer of organic semiconductor and the gate electrode, wherein the gate dielectric comprises a cross-linked polymer and a fluorine containing polymer.
摘要翻译： 一种有机薄膜晶体管，包括：基板; 源电极和漏极，设置在衬底上，沟道区域在其之间; 布置在沟道区域中的有机半导体层; 栅电极; 以及设置在所述有机半导体层与所述栅极电极之间的栅极电介质，其中所述栅极电介质包含交联聚合物和含氟聚合物。
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9.发明授权公开(公告)号：US08425272B2
公开(公告)日：2013-04-23
申请号：US11658710
申请日：2005-07-25
申请人： Jonathan J. Halls , Richard Wilson
发明人： Jonathan J. Halls , Richard Wilson
IPC分类号： H01L51/56
CPC分类号： H01L51/5203 , H01L25/047 , H01L27/3202 , H01L27/3204 , H01L51/0024 , H01L51/42 , H01L51/524 , H01L51/56 , H01L2924/0002 , H01L2924/09701 , Y02E10/549 , Y02P70/521 , Y10T156/10 , Y10T428/239 , H01L2924/00
摘要： A method of producing an encapsulated module of interconnected opto-electronic devices which comprises: forming a patterned anode layer; forming a layer of opto-electronically active material over the patterned anode layer; forming a patterned cathode layer over the layer of opto-electronically active material, to provide a device array of opto-electronically active cells on the substrate; selectively removing portions of the layer of opto-electronically active material so as to expose minor portions of the anodes; forming a patterned interconnect layer on an encapsulating sheet in a pattern to define an array of interconnect pads; and laminating the patterned encapsulating sheet over the array of opto-electronically active cells whereby the exposed anode portions are interconnected with the cathodes of adjacent cells by the interconnect pads and the interconnected cells are encapsulated by the encapsulating sheet.
摘要翻译： 一种制造互连光电器件的封装模块的方法，包括：形成图案化的阳极层; 在图案化的阳极层上形成光电子活性材料层; 在光电子活性材料层上形成图案化的阴极层，以在衬底上提供光电子活性电池的器件阵列; 选择性地去除所述光电子活性材料层的部分以暴露所述阳极的较少部分; 以图案形式在封装片上形成图案化的互连层，以限定互连焊盘的阵列; 并且将图案化的封装片材层压在光电子活性电池阵列上，由此暴露的阳极部分通过互连焊盘与相邻电池的阴极互连，并且互连的电池被封装片封装。
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10.发明申请公开(公告)号：US20090189515A1
公开(公告)日：2009-07-30
申请号：US11658710
申请日：2005-07-25
申请人： Jonathan J. Halls , Richard Wilson
发明人： Jonathan J. Halls , Richard Wilson
CPC分类号： H01L51/5203 , H01L25/047 , H01L27/3202 , H01L27/3204 , H01L51/0024 , H01L51/42 , H01L51/524 , H01L51/56 , H01L2924/0002 , H01L2924/09701 , Y02E10/549 , Y02P70/521 , Y10T156/10 , Y10T428/239 , H01L2924/00
摘要： A method of producing an encapsulated module of interconnected opto-electronic devices which comprises: forming a patterned anode layer; forming a layer of opto-electronically active material over the patterned anode layer; forming a patterned cathode layer over the layer of opto-electronically active material, to provide a device array of opto-electronically active cells on the substrate; selectively removing portions of the layer of opto-electronically active material so as to expose minor portions of the anodes; forming a patterned interconnect layer on an encapsulating sheet in a pattern to define an array of interconnect pads; and laminating the patterned encapsulating sheet over the array of opto-electronically active cells whereby the exposed anode portions are interconnected with the cathodes of adjacent cells by the interconnect pads and the interconnected cells are encapsulated by the encapsulating sheet.
摘要翻译： 一种制造互连光电器件的封装模块的方法，包括：形成图案化的阳极层; 在图案化的阳极层上形成光电子活性材料层; 在光电子活性材料层上形成图案化的阴极层，以在衬底上提供光电子活性电池的器件阵列; 选择性地去除所述光电子活性材料层的部分以暴露所述阳极的较少部分; 以图案形式在封装片上形成图案化的互连层，以限定互连焊盘的阵列; 并且将图案化的封装片材层压在光电子活性电池阵列上，由此暴露的阳极部分通过互连焊盘与相邻电池的阴极互连，并且互连的电池被封装片封装。
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