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公开(公告)号：US20110127504A1
公开(公告)日：2011-06-02
申请号：US12935573
申请日：2009-02-25
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L51/052 , H01L51/0529 , H01L51/0537 , H01L51/0541 , H01L51/0545
摘要： An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode disposed over the substrate with a channel region therebetween; a layer of organic semiconductor disposed in the channel region; a gate electrode; and a gate dielectric disposed between the layer of organic semiconductor and the gate electrode, wherein the gate dielectric comprises a cross-linked polymer and a fluorine containing polymer.
摘要翻译： 一种有机薄膜晶体管，包括：基板; 源电极和漏极，设置在衬底上，沟道区域在其之间; 布置在沟道区域中的有机半导体层; 栅电极; 以及设置在所述有机半导体层与所述栅极电极之间的栅极电介质，其中所述栅极电介质包含交联聚合物和含氟聚合物。
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公开(公告)号：US08735871B2
公开(公告)日：2014-05-27
申请号：US12935573
申请日：2009-02-25
IPC分类号： H01L35/24
CPC分类号： H01L51/052 , H01L51/0529 , H01L51/0537 , H01L51/0541 , H01L51/0545
摘要： An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode disposed over the substrate with a channel region therebetween; a layer of organic semiconductor disposed in the channel region; a gate electrode; and a gate dielectric disposed between the layer of organic semiconductor and the gate electrode, wherein the gate dielectric comprises a cross-linked polymer and a fluorine containing polymer.
摘要翻译： 一种有机薄膜晶体管，包括：基板; 源电极和漏极，设置在衬底上，沟道区域在其之间; 布置在沟道区域中的有机半导体层; 栅电极; 以及设置在所述有机半导体层与所述栅极电极之间的栅极电介质，其中所述栅极电介质包含交联聚合物和含氟聚合物。
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公开(公告)号：US20120007079A1
公开(公告)日：2012-01-12
申请号：US13239078
申请日：2011-09-21
IPC分类号： H01L29/04 , H01L29/786
CPC分类号： H01L29/78696 , H01L29/42384 , H01L29/78606 , H01L29/78645
摘要： A thin film field effect transistor is disclosed which provides improved time-based channel stability. The field effect transistor includes first and second disordered semiconductor layers separated by an insulator. In an embodiment a carrier injection terminal is provided in a thin semiconductor layer closest to the gate terminal. An electric field is established in the thin semiconductor layer. At sufficient field strength, the electric field extends into the second semiconductor layer, which is in contact with the source and drain terminals. At sufficient field strength a channel is established in the second semiconductor layer, permitting current to flow between source and drain terminals. Above a certain gate voltage, there is sufficient free charge is induced in the first semiconductor layer so that the field does not extend into the second semiconductor, effectively shutting off current between source and drain. Single-device transition detection (as well as other applications) may be obtained.
摘要翻译： 公开了薄膜场效应晶体管，其提供改进的基于时间的信道稳定性。 场效应晶体管包括由绝缘体隔开的第一和第二无序半导体层。 在一个实施例中，载流子注入端子设置在最靠近栅极端子的薄半导体层中。 在薄半导体层中形成电场。 在足够的场强下，电场延伸到与源极和漏极端子接触的第二半导体层。 在足够的场强下，在第二半导体层中建立通道，允许电流在源极和漏极端子之间流动。 在一定的栅极电压之上，在第一半导体层中感应出足够的自由电荷，使得场不延伸到第二半导体中，有效地关闭源极和漏极之间的电流。 可以获得单器件转换检测（以及其他应用）。
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公开(公告)号：US08642379B2
公开(公告)日：2014-02-04
申请号：US12524023
申请日：2008-04-03
IPC分类号： H01L51/30
CPC分类号： H01L27/3274 , H01L21/31683 , H01L51/0541 , H01L51/105 , H01L51/5206
摘要： A method of making a top-gate organic thin film transistor, comprising forming source and drain contacts on a substrate; oxidizing portions of the source and drain contacts; depositing an organic semiconductor layer to form a bridge between the oxidized portions of the source and drain contacts; depositing a gate insulating layer over the organic semiconductor layer; and forming a gate electrode over the gate insulating layer.
摘要翻译： 一种制造顶栅有机薄膜晶体管的方法，包括在衬底上形成源极和漏极接触; 氧化源极和漏极接触部分; 沉积有机半导体层以在源极和漏极触点的氧化部分之间形成桥; 在所述有机半导体层上沉积栅极绝缘层; 以及在所述栅绝缘层上形成栅电极。
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公开(公告)号：US20120175616A1
公开(公告)日：2012-07-12
申请号：US13426518
申请日：2012-03-21
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , H01L29/42384 , H01L29/78606 , H01L29/78645
摘要： A thin film field effect transistor is disclosed which provides improved time-based channel stability. The field effect transistor includes first and second disordered semiconductor layers separated by an insulator. In an embodiment a carrier injection terminal is provided in a thin semiconductor layer closest to the gate terminal. An electric field is established in the thin semiconductor layer. At sufficient field strength, the electric field extends into the second semiconductor layer, which is in contact with the source and drain terminals. At sufficient field strength a channel is established in the second semiconductor layer, permitting current to flow between source and drain terminals. Above a certain gate voltage, there is sufficient free charge is induced in the first semiconductor layer so that the field does not extend into the second semiconductor, effectively shutting off current between source and drain. Single-device transition detection (as well as other applications) may be obtained.
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公开(公告)号：US20120248092A1
公开(公告)日：2012-10-04
申请号：US13076375
申请日：2011-03-30
CPC分类号： H01C17/06506 , H01C7/02 , H01C7/023 , H01C7/026 , H01C7/04 , H01C7/043 , H01C7/044 , H01C7/047 , Y10T29/49083
摘要： A thermistor has a mixture of a temperature sensitive material and a conductive material, and an electrode in electrical contact with the mixture. A method of manufacturing a thermistor includes depositing conductive contacts onto a substrate, printing a thermistor mixture of temperature sensitive material and a conductive material over the contact, and annealing the thermistor mixture to produce a flexible thermistor on the conductive contacts.
摘要翻译： 热敏电阻具有温度敏感材料和导电材料的混合物，以及与混合物电接触的电极。 制造热敏电阻的方法包括将导电接触淀积到衬底上，在接触件上印刷温度敏感材料和导电材料的热敏电阻混合物，以及退火热敏电阻混合物以在导电触点上产生柔性热敏电阻。
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公开(公告)号：US20110147742A1
公开(公告)日：2011-06-23
申请号：US12642132
申请日：2009-12-18
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , H01L29/42384 , H01L29/78606 , H01L29/78645
摘要： A thin film field effect transistor is disclosed which provides improved time-based channel stability. The field effect transistor includes first and second disordered semiconductor layers separated by an insulator. In an embodiment a carrier injection terminal is provided in a thin semiconductor layer closest to the gate terminal. An electric field is established in the thin semiconductor layer. At sufficient field strength, the electric field extends into the second semiconductor layer, which is in contact with the source and drain terminals. At sufficient field strength a channel is established in the second semiconductor layer, permitting current to flow between source and drain terminals. Above a certain gate voltage, there is sufficient free charge is induced in the first semiconductor layer so that the field does not extend into the second semiconductor, effectively shutting off current between source and drain. Single-device transition detection (as well as other applications) may be obtained.
摘要翻译： 公开了薄膜场效应晶体管，其提供改进的基于时间的信道稳定性。 场效应晶体管包括由绝缘体隔开的第一和第二无序半导体层。 在一个实施例中，载流子注入端子设置在最靠近栅极端子的薄半导体层中。 在薄半导体层中形成电场。 在足够的场强下，电场延伸到与源极和漏极端子接触的第二半导体层。 在足够的场强下，在第二半导体层中建立通道，允许电流在源极和漏极端子之间流动。 在一定的栅极电压之上，在第一半导体层中感应出足够的自由电荷，使得场不延伸到第二半导体中，有效地关闭源极和漏极之间的电流。 可以获得单器件转换检测（以及其他应用）。
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公开(公告)号：US20100084638A1
公开(公告)日：2010-04-08
申请号：US12524023
申请日：2008-04-03
CPC分类号： H01L27/3274 , H01L21/31683 , H01L51/0541 , H01L51/105 , H01L51/5206
摘要： A method of making a top-gate organic thin film transistor, comprising forming source and drain contacts on a substrate; oxidizing portions of the source and drain contacts; depositing an organic semiconductor layer to form a bridge between the oxidized portions of the source and drain contacts; depositing a gate insulating layer over the organic semiconductor layer; and forming a gate electrode over the gate insulating layer.
摘要翻译： 一种制造顶栅有机薄膜晶体管的方法，包括在衬底上形成源极和漏极接触; 氧化源极和漏极接触部分; 沉积有机半导体层以在源极和漏极触点的氧化部分之间形成桥; 在所述有机半导体层上沉积栅极绝缘层; 以及在所述栅绝缘层上形成栅电极。
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公开(公告)号：US08450142B2
公开(公告)日：2013-05-28
申请号：US12532629
申请日：2008-04-03
IPC分类号： H01L51/10 , H01L51/40 , H01L21/336 , H01L29/786
CPC分类号： H01L51/0541 , H01L51/0005
摘要： An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode defining a channel; a layer of insulating material disposed over the source and drain electrodes; a layer of organic semi-conductive material extending across the channel; a layer of dielectric material; and a gate electrode disposed over the layer of dielectric material.
摘要翻译： 一种有机薄膜晶体管，包括：基板; 源电极和限定沟道的漏电极; 设置在源极和漏极上的绝缘材料层; 延伸穿过通道的有机半导体材料层; 介电材料层; 以及设置在电介质材料层上的栅电极。
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10.发明申请HIGHLY FLEXIBLE PRINTED ALKALINE BATTERIES BASED ON MESH EMBEDDED ELECTRODES 审中-公开基于MESH嵌入式电极的高灵敏度印刷碱性电池公开(公告)号：US20120276434A1
公开(公告)日：2012-11-01
申请号：US13095373
申请日：2011-04-27
CPC分类号： H01M4/74 , H01M4/0416 , H01M4/244 , H01M4/48 , H01M4/50 , H01M10/0436 , H01M10/34 , H01M2010/0495 , Y10T29/49108 , Y10T29/4911 , Y10T29/49115
摘要： A flexible battery and a method to form the flexible battery include forming an anode by embedding an anode type electro-active material within a mesh material and associating an anode current collector with the anode. Similarly a cathode is formed by embedding a cathode type electro-active material within a mesh material and a cathode current collector is associated with the cathode. An electrolyte is located between the anode and cathode, and the arrangement is sealed.
摘要翻译： 柔性电池和形成柔性电池的方法包括通过在网状材料中嵌入阳极型电活性材料并将阳极集电器与阳极相关联来形成阳极。 类似地，通过将阴极型电活性材料嵌入网状材料中形成阴极，并且阴极集电器与阴极相关联。 电解质位于阳极和阴极之间，密封。
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