公开(公告)号：US20070108438A1

公开(公告)日：2007-05-17

申请号：US11446586

申请日：2006-06-01

申请人： Jonathan Lindsey ,  David Bocian ,  Robert Loewe ,  Ignacio Sanchez ,  Werner Kuhr ,  Kisari Padmaja ,  Lingyun Wei

发明人： Jonathan Lindsey ,  David Bocian ,  Robert Loewe ,  Ignacio Sanchez ,  Werner Kuhr ,  Kisari Padmaja ,  Lingyun Wei

IPC分类号： H01L51/00 ,  C07D487/22

CPC分类号： C07D207/335 ,  B82Y10/00 ,  B82Y30/00 ,  C07C17/093 ,  C07C21/17 ,  C07C25/24 ,  C07C45/44 ,  C07C45/58 ,  C07C47/548 ,  C07C255/50 ,  H01L51/0077 ,  H01L51/0595 ,  C07C47/24 ,  C07C25/22

摘要： This invention provides redox-active molecules attached to polypodal (e.g., bipodal, tripodal, quadrapodal, pentapodal, etc.) tethers that can be used for attachment of the redox-active molecules to a substrate (e.g., an electrode). The tethered redox-active molecules are useful for the fabrication of memory devices.

摘要翻译： 本发明提供连接到可以用于将氧化还原活性分子连接到底物（例如电极）上的多峰（例如，双峰，三峰，四峰，五峰等）系链的氧化还原活性分子。 系留的氧化还原活性分子可用于制造存储器件。

公开(公告)号：US20060209587A1

公开(公告)日：2006-09-21

申请号：US11266776

申请日：2005-11-03

申请人： David Bocian ,  Werner Kuhr ,  Jonathan Lindsey ,  Peter Clausen ,  Daniel Gryko

发明人： David Bocian ,  Werner Kuhr ,  Jonathan Lindsey ,  Peter Clausen ,  Daniel Gryko

IPC分类号： G11C11/00

CPC分类号： H01L51/0078 ,  B82Y10/00 ,  B82Y30/00 ,  C07D487/22 ,  C07D519/00 ,  C07F17/02 ,  G11B9/14 ,  G11B9/149 ,  G11C11/5664 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0069 ,  G11C13/025 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/77 ,  H01L27/28 ,  H01L51/0077 ,  H01L51/0084 ,  H01L51/009 ,  H01L51/0595

摘要： This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits/cm3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode.

摘要翻译： 本发明提供了可提供高存储密度（例如，10位/ cm 3以上）的可电寻址以允许有效读取和写入的新型高密度存储器件，该 提供高度的容错性，并且适合高效的化学合成和芯片制造。 器件本质上可锁定，缺陷容忍，并支持破坏性或非破坏性的读取周期。 在优选实施例中，该装置包括电耦合到存储介质的固定电极，该存储介质具有多种不同且可区分的氧化态，其中通过经由该存储介质从所述存储介质中添加或撤出一个或多个电子而将数据存储在所述氧化态中 电耦合电极。

公开(公告)号：US20050185447A1

公开(公告)日：2005-08-25

申请号：US11102089

申请日：2005-04-07

申请人： Werner Kuhr ,  David Bocian ,  Jonathan Lindsey ,  Kristian Roth

发明人： Werner Kuhr ,  David Bocian ,  Jonathan Lindsey ,  Kristian Roth

IPC分类号： G01N27/416 ,  G01N27/49 ,  G01N27/26 ,  G01N17/00

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  G01N27/3277

摘要： This invention provides approaches to improve the signal to noise ratio (S/N) in electrochemical measurements (e.g., amperometry, voltammetry, etc.). In particular, a method is described wherein the faradaic current is temporally dissociated from the charging current associated with reading the charge of a redox-active species (e.g., a self-assembled monolayer (SAM)). This method, designated herein as open circuit potential amperometry (OCPA), quantitatively reads the charge of the redox species bound to (electrically coupled to) an electrode surface, while discriminating against both charging current(s) and amperometric signal(s) that arise, e.g., from diffusion-based species in solution.

摘要翻译： 本发明提供了改善电化学测量（例如电流分析法，伏安法等）中的信噪比（S / N）的方法。 特别地，描述了一种方法，其中法拉第电流与读取氧化还原活性物质的电荷（例如，自组装单层（SAM））相关的充电电流暂时解离。 该方法在本文中指定为开路电位电流分析法（OCPA），定量地读取结合到（电耦合到）电极表面的氧化还原物质的电荷，同时区分出现的充电电流和电流测量信号 ，例如，从溶液中的基于扩散的物质。

公开(公告)号：US20050062097A1

公开(公告)日：2005-03-24

申请号：US10498743

申请日：2002-12-12

申请人： Veena Misra ,  David Bocian ,  Werner Kuhr ,  Jonathan Lindsey

发明人： Veena Misra ,  David Bocian ,  Werner Kuhr ,  Jonathan Lindsey

IPC分类号： H01L21/8247 ,  G11C11/56 ,  G11C13/02 ,  H01L27/115 ,  H01L27/28 ,  H01L29/788 ,  H01L29/792 ,  H01L51/05

CPC分类号： H01L27/283 ,  B82Y10/00 ,  G11C11/5664 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2213/53 ,  H01L51/052 ,  H01L51/0529 ,  Y10S977/721 ,  Y10S977/887 ,  Y10S977/937

摘要： A method and/or system and/or apparatus for a molecular-based FET device (an m-FET) uses charge storing molecules (120) between a gate (110) and channel (105) of an FET-type transistor. Further embodiments describe fabrication methods for using combinations of standard practices in lithography and synthetic chemistry and novel elements.

摘要翻译： 用于分子型FET器件（m-FET）的方法和/或系统和/或设备在FET型晶体管的栅极（110）和沟道（105）之间使用电荷存储分子（120）。 另外的实施例描述了使用光刻和合成化学中的标准实践的组合以及新颖元件的制造方法。

公开(公告)号：US20050207208A1

公开(公告)日：2005-09-22

申请号：US10837028

申请日：2004-04-30

申请人： David Bocian ,  Werner Kuhr ,  Jonathan Lindsey ,  Veena Misra

发明人： David Bocian ,  Werner Kuhr ,  Jonathan Lindsey ,  Veena Misra

IPC分类号： G11C11/00 ,  G11C13/00 ,  G11C13/02 ,  H01L20060101 ,  H01L51/00 ,  H01L51/30 ,  H01M6/14 ,  H01M6/16 ,  H01M6/18

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/0009 ,  H01L51/0021 ,  H01L51/005 ,  H01L51/0077 ,  H01L51/0595 ,  Y10S977/896 ,  Y10S977/943

摘要： This invention pertains to methods assembly of organic molecules and electrolytes in hybrid electronic. In one embodiment, a is provided that involves contacting a surface/electrode with a compound if formula: R-L2-M-L1-Z1 where Z1 is a surface attachment group; L1 and L2 are independently linker or covalent bonds; M is an information storage molecule; and R is a protected or unprotected reactive site or group; where the contacting results in attachment of the redox-active moiety to the surface via the surface attachment group; and ii) contacting the surface-attached information storage molecule with an electrolyte having the formula: J-Q where J is a charged moiety (e.g., an electrolyte); and Q is a reactive group that is reactive with the reactive group (R) and attaches J to the information storage molecule thereby patterning the electrolyte on the surface.

摘要翻译： 本发明涉及混合电子中有机分子和电解质的组装方法。 在一个实施方案中，提供了一种方法，其包括使表面/电极与化合物接触，如果下列公式：RL 2 -ML 1 -Z 1 / Z 1是表面附着基团; L 1和L 2独立地是连接基或共价键; M是信息存储分子; 并且R是被保护或未被保护的反应性位点或基团; 其中所述接触导致通过所述表面附着基团将所述氧化还原活性部分附着到所述表面; 和ii）使表面附着的信息存储分子与具有下式的电解质接触：J-Q其中J是带电部分（例如电解质）; 并且Q是与反应性基团（R）反应并且将J附着到信息存储分子的反应性基团，从而对表面上的电解质进行图案化。

公开(公告)号：US20050041494A1

公开(公告)日：2005-02-24

申请号：US10723315

申请日：2003-11-25

申请人： David Bocian ,  Werner Kuhr ,  Jonathan Lindsey

发明人： David Bocian ,  Werner Kuhr ,  Jonathan Lindsey

IPC分类号： C07D487/22 ,  C07D519/00 ,  C07F17/02 ,  G11C11/56 ,  G11C13/00 ,  G11C13/02 ,  G11C16/00 ,  H01L27/28 ,  H01L51/30 ,  G11C7/00

CPC分类号： H01L51/0078 ,  B82Y10/00 ,  C07D487/22 ,  C07D519/00 ,  C07F17/02 ,  G11B9/14 ,  G11B9/149 ,  G11C11/5664 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2213/15 ,  G11C2213/77 ,  H01L27/28 ,  H01L51/0077 ,  H01L51/0084 ,  H01L51/009 ,  H01L51/0595 ,  Y10S977/943

摘要： This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits/cm3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode.

摘要翻译： 本发明提供了可提供高存储密度（例如，10,15bit / cm 3）的电位置可允许有效读/写的新型高密度存储器件，其提供高度的容错能力，并且 适合有效的化学合成和芯片制造。 器件本质上可锁定，缺陷容忍，并支持破坏性或非破坏性的读取周期。 在优选实施例中，该装置包括电耦合到存储介质的固定电极，该存储介质具有多种不同且可区分的氧化态，其中通过经由该存储介质从所述存储介质中添加或撤出一个或多个电子而将数据存储在所述氧化态中 电耦合电极。

公开(公告)号：US20050048691A1

公开(公告)日：2005-03-03

申请号：US10742596

申请日：2003-12-19

申请人： David Bocian ,  Jonathan Lindsey ,  Zhiming Liu ,  Amir Yasseri ,  Veen Misra ,  Qian Zhao ,  Qiliang Li ,  Shyam Surthi ,  Robert Loewe

发明人： David Bocian ,  Jonathan Lindsey ,  Zhiming Liu ,  Amir Yasseri ,  Veen Misra ,  Qian Zhao ,  Qiliang Li ,  Shyam Surthi ,  Robert Loewe

IPC分类号： G11C13/02 ,  H01L21/477 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H01M4/60 ,  H01M14/00 ,  H01L21/26

CPC分类号： H01L51/0002 ,  B82Y10/00 ,  G11B9/14 ,  G11B9/149 ,  G11C13/0014 ,  G11C13/0016 ,  H01L51/0008 ,  H01L51/001 ,  H01L51/0026 ,  H01L51/0075 ,  H01L51/0077 ,  H01L51/0595 ,  H01L51/4213 ,  H01M4/60 ,  H01M14/005 ,  Y02E10/549

摘要： This invention provides a new procedure for attaching molecules to semiconductor surfaces, in particular silicon. The molecules, which include, but are not limited to porphyrins and ferrocenes, have been previously shown to be attractive candidates for molecular-based information storage. The new attachment procedure is simple, can be completed in short times, requires minimal amounts of material, is compatible with diverse molecular functional groups, and in some instances affords unprecedented attachment motifs. These features greatly enhance the integration of the molecular materials into the processing steps that are needed to create hybrid molecular/semiconductor information storage devices.

摘要翻译： 本发明提供了一种将分子连接到半导体表面，特别是硅的新方法。 以前已经显示出包括但不限于卟啉和二茂铁的分子是用于基于分子的信息存储的有吸引力的候选物。 新的附件程序简单，可以在短时间内完成，需要最少量的材料，与不同的分子官能团相容，并在某些情况下提供前所未有的附着图案。 这些特征大大增强了分子材料与创建混合分子/半导体信息存储设备所需的处理步骤的集成。

公开(公告)号：US20050217559A1

公开(公告)日：2005-10-06

申请号：US11140011

申请日：2005-05-26

申请人： David Bocian ,  Jonathan Lindsey ,  Zhiming Liu ,  Amir Yasseri ,  Robert Loewe

发明人： David Bocian ,  Jonathan Lindsey ,  Zhiming Liu ,  Amir Yasseri ,  Robert Loewe

IPC分类号： G11C13/02 ,  H01L21/477 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H01M4/60 ,  H01M14/00 ,  C30B1/00

CPC分类号： H01M4/60 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  H01L51/0002 ,  H01L51/0003 ,  H01L51/0008 ,  H01L51/0026 ,  H01L51/0075 ,  H01L51/0077 ,  H01L51/0595 ,  H01L51/4213 ,  H01M14/005 ,  Y02E10/549

摘要： This invention provides a new procedure for attaching molecules to semiconductor surfaces, in particular silicon. The molecules, which include, but are not limited to porphyrins and ferrocenes, have been previously shown to be attractive candidates for molecular-based information storage. The new attachment procedure is simple, can be completed in short times, requires minimal amounts of material, is compatible with diverse molecular functional groups, and in some instances affords unprecedented attachment motifs. These features greatly enhance the integration of the molecular materials into the processing steps that are needed to create hybrid molecular/semiconductor information storage devices.

公开(公告)号：US20050019500A1

公开(公告)日：2005-01-27

申请号：US10628868

申请日：2003-07-28

申请人： David Bocian ,  Jonathan Lindsey ,  Zhiming Liu ,  Amir Yasseri ,  Robert Loewe

发明人： David Bocian ,  Jonathan Lindsey ,  Zhiming Liu ,  Amir Yasseri ,  Robert Loewe

IPC分类号： G11C13/02 ,  H01L21/477 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H01M4/60 ,  H01M14/00 ,  B05D3/02

CPC分类号： H01M4/60 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  H01L51/0002 ,  H01L51/0003 ,  H01L51/0008 ,  H01L51/0026 ,  H01L51/0075 ,  H01L51/0077 ,  H01L51/0595 ,  H01L51/4213 ,  H01M14/005 ,  Y02E10/549

摘要： This invention provides a new procedure for attaching molecules to semiconductor surfaces, in particular silicon. The molecules, which include, but are not limited to porphyrins and ferrocenes, have been previously shown to be attractive candidates for molecular-based information storage. The new attachment procedure is simple, can be completed in short times, requires minimal amounts of material, is compatible with diverse molecular functional groups, and in some instances affords unprecedented attachment motifs. These features greatly enhance the integration of the molecular materials into the processing steps that are needed to create hybrid molecular/semiconductor information storage devices.

摘要翻译： 本发明提供了一种将分子连接到半导体表面，特别是硅的新方法。 以前已经显示出包括但不限于卟啉和二茂铁的分子是用于基于分子的信息存储的有吸引力的候选物。 新的附件程序简单，可以在短时间内完成，需要最少量的材料，与不同的分子官能团相容，并在某些情况下提供前所未有的附着图案。 这些特征大大增强了分子材料与创建混合分子/半导体信息存储设备所需的处理步骤的集成。

公开(公告)号：US20070212897A1

公开(公告)日：2007-09-13

申请号：US11688194

申请日：2007-03-19

申请人： David Bocian ,  Jonathan Lindsey ,  Zhiming Liu ,  Amir Yasseri ,  Veena Misra ,  Qian Zhao ,  Qiliang Li ,  Shyam Surthi ,  Robert Loewe

发明人： David Bocian ,  Jonathan Lindsey ,  Zhiming Liu ,  Amir Yasseri ,  Veena Misra ,  Qian Zhao ,  Qiliang Li ,  Shyam Surthi ,  Robert Loewe

IPC分类号： H01L21/469

CPC分类号： H01L51/0002 ,  B82Y10/00 ,  G11B9/14 ,  G11B9/149 ,  G11C13/0014 ,  G11C13/0016 ,  H01L51/0008 ,  H01L51/001 ,  H01L51/0026 ,  H01L51/0075 ,  H01L51/0077 ,  H01L51/0595 ,  H01L51/4213 ,  H01M4/60 ,  H01M14/005 ,  Y02E10/549

摘要： This invention provides a new procedure for attaching molecules to semiconductor surfaces, in particular silicon. The molecules, which include, but are not limited to porphyrins and ferrocenes, have been previously shown to be attractive candidates for molecular-based information storage. The new attachment procedure is simple, can be completed in short times, requires minimal amounts of material, is compatible with diverse molecular functional groups, and in some instances affords unprecedented attachment motifs. These features greatly enhance the integration of the molecular materials into the processing steps that are needed to create hybrid molecular/semiconductor information storage devices.

摘要翻译： 本发明提供了一种将分子连接到半导体表面，特别是硅的新方法。 以前已经显示出包括但不限于卟啉和二茂铁的分子是用于基于分子的信息存储的有吸引力的候选物。 新的附件程序简单，可以在短时间内完成，需要最少量的材料，与不同的分子官能团相容，并在某些情况下提供前所未有的附着图案。 这些特征大大增强了分子材料与创建混合分子/半导体信息存储设备所需的处理步骤的集成。