利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

19 条记录 (耗时 0.039 秒)

    Light emitters using nanotubes and methods of making same
    1.
    发明授权
    Light emitters using nanotubes and methods of making same 有权
    使用纳米管的发光体及其制作方法

    公开(公告)号：US08471238B2

    公开(公告)日：2013-06-25

    申请号：US11227468

    申请日：2005-09-15

    申请人： Jonathan W. Ward ,  Mitchell Meinhold ,  Claude L. Bertin ,  Benjamin Schlatka ,  Brent M. Segal ,  Thomas Ruckes

    发明人： Jonathan W. Ward ,  Mitchell Meinhold ,  Claude L. Bertin ,  Benjamin Schlatka ,  Brent M. Segal ,  Thomas Ruckes

    IPC分类号： H01L29/06

    CPC分类号： H01K1/04 ,  B82Y10/00 ,  B82Y20/00 ,  H01L51/0048 ,  H01L51/0052

    摘要： Light emitters using nanotubes and methods of making same. A light emitter includes a nanotube article in electrical communication with a first and a second contact, a substrate having a predefined region with a relatively low thermal conductivity said region in predefined physical relation to said nanotube article; and a stimulus circuit in electrical communication with the first and second contacts. The stimulus circuit provides electrical stimulation sufficient to induce light emission from the nanotube article in the proximity of the predefined region. The predefined region is a channel formed in the substrate or a region of material with relatively low thermal conductivity. The light emitter can be integrated with semiconductor circuits including CMOS circuits. The light emitter can be integrated into optical driver circuits (on- and off-chip drivers) and opto-isolators.

    摘要翻译： 使用纳米管的发光体及其制作方法。 光发射器包括与第一和第二接触电连通的纳米管制品，具有预定区域的基底，所述预定区域具有相对于所述纳米管制品预定的物理关系的相对低导热性的所述区域; 以及与第一和第二触点电连通的激励电路。 刺激电路提供足以在预定区域附近从纳米管制品引发光发射的电刺激。 预定区域是形成在衬底中的通道或具有相对较低热导率的材料区域。 光发射器可以与包括CMOS电路的半导体电路集成。 光发射器可以集成到光驱动器电路（片上和片外驱动器）和光隔离器中。

    Light emitters using nanotubes and methods of making same
    2.
    发明申请
    Light emitters using nanotubes and methods of making same 有权
    使用纳米管的发光体及其制作方法

    公开(公告)号：US20080036356A1

    公开(公告)日：2008-02-14

    申请号：US11227468

    申请日：2005-09-15

    申请人： Jonathan W. Ward ,  Mitchell Meinhold ,  Claude L. Bertin ,  Benjamin Schlatka ,  Brent M. Segal ,  Thomas Ruckes

    发明人： Jonathan W. Ward ,  Mitchell Meinhold ,  Claude L. Bertin ,  Benjamin Schlatka ,  Brent M. Segal ,  Thomas Ruckes

    IPC分类号： H01K1/02

    CPC分类号： H01K1/04 ,  B82Y10/00 ,  B82Y20/00 ,  H01L51/0048 ,  H01L51/0052

    摘要： Light emitters using nanotubes and methods of making same. A light emitter includes a nanotube article in electrical communication with a first and a second contact, a substrate having a predefined region with a relatively low thermal conductivity said region in predefined physical relation to said nanotube article; and a stimulus circuit in electrical communication with the first and second contacts. The stimulus circuit provides electrical stimulation sufficient to induce light emission from the nanotube article in the proximity of the predefined region. The predefined region is a channel formed in the substrate or a region of material with relatively low thermal conductivity. The light emitter can be integrated with semiconductor circuits including CMOS circuits. The light emitter can be integrated into optical driver circuits (on- and off-chip drivers) and opto-isolators.

    摘要翻译： 使用纳米管的发光体及其制作方法。 光发射器包括与第一和第二接触电连通的纳米管制品，具有预定区域的基底，所述预定区域具有相对于所述纳米管制品预定的物理关系的相对低导热性的所述区域; 以及与第一和第二触点电连通的激励电路。 刺激电路提供足以在预定区域附近从纳米管制品引发光发射的电刺激。 预定区域是形成在衬底中的通道或具有相对较低热导率的材料区域。 光发射器可以与包括CMOS电路的半导体电路集成。 光发射器可以集成到光驱动器电路（片上和片外驱动器）和光隔离器中。

    Method of forming a carbon nanotube-based contact to semiconductor
    3.
    发明授权
    Method of forming a carbon nanotube-based contact to semiconductor 有权
    形成与半导体的碳纳米管基接触的方法

    公开(公告)号：US07563711B1

    公开(公告)日：2009-07-21

    申请号：US11708929

    申请日：2007-02-21

    申请人： Jonathan W. Ward ,  Benjamin Schlatka ,  Mitchell Meinhold ,  Robert F. Smith ,  Brent M. Segal

    发明人： Jonathan W. Ward ,  Benjamin Schlatka ,  Mitchell Meinhold ,  Robert F. Smith ,  Brent M. Segal

    IPC分类号： H01L21/44

    CPC分类号： H01L33/40 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/452 ,  H01L33/32 ,  Y10S438/924 ,  Y10T428/30 ,  Y10T428/31678

    摘要： Manufacturers encounter limitations in forming low resistance ohmic electrical contact to semiconductor material P-type Gallium Nitride (p-GaN), commonly used in photonic applications, such that the contact is highly transparent to the light emission of the device. Carbon nanotubes (CNTs) can address this problem due to their combined metallic and semiconducting characteristics in conjunction with the fact that a fabric of CNTs has high optical transparency. The physical structure of the contact scheme is broken down into three components, a) the GaN, b) an interface material and c) the metallic conductor. The role of the interface material is to make suitable contact to both the GaN and the metal so that the GaN, in turn, will make good electrical contact to the metallic conductor that interfaces the device to external circuitry. A method of fabricating contact to GaN using CNTs and metal while maintaining protection of the GaN surface is provided.

    摘要翻译： 制造商在与通常用于光子应用的半导体材料P型氮化镓（p-GaN）形成低电阻欧姆电接触方面遇到限制，使得接触对器件的发光是高度透明的。 碳纳米管（CNT）由于其组合的金属和半导体特性以及CNT的织物具有高的光学透明度的事实，可以解决这个问题。 接触方案的物理结构分为三个部分：a）GaN，b）界面材料和c）金属导体。 界面材料的作用是使GaN和金属两者适当地接触，这样GaN又将与将器件与外部电路接口的金属导体进行良好的电接触。 提供了一种使用CNT和金属制造与GaN接触的方法，同时保持了GaN表面的保护。

    Method of forming a carbon nanotube-based contact to semiconductor
    4.
    发明授权
    Method of forming a carbon nanotube-based contact to semiconductor 有权
    形成与半导体的碳纳米管基接触的方法

    公开(公告)号：US08044388B2

    公开(公告)日：2011-10-25

    申请号：US12506878

    申请日：2009-07-21

    申请人： Jonathan W. Ward ,  Benjamin Schlatka ,  Mitchell Meinhold ,  Robert F. Smith ,  Brent M. Segal

    发明人： Jonathan W. Ward ,  Benjamin Schlatka ,  Mitchell Meinhold ,  Robert F. Smith ,  Brent M. Segal

    IPC分类号： H01L35/24

    CPC分类号： H01L33/40 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/452 ,  H01L33/32 ,  Y10S438/924 ,  Y10T428/30 ,  Y10T428/31678

    摘要： Manufacturers encounter limitations in forming low resistance ohmic electrical contact to semiconductor material P-type Gallium Nitride (p-GaN), commonly used in photonic applications, such that the contact is highly transparent to the light emission of the device. Carbon nanotubes (CNTs) can address this problem due to their combined metallic and semiconducting characteristics in conjunction with the fact that a fabric of CNTs has high optical transparency. The physical structure of the contact scheme is broken down into three components, a) the GaN, b) an interface material and c) the metallic conductor. The role of the interface material is to make suitable contact to both the GaN and the metal so that the GaN, in turn, will make good electrical contact to the metallic conductor that interfaces the device to external circuitry. A method of fabricating contact to GaN using CNTs and metal while maintaining protection of the GaN surface is provided.

    摘要翻译： 制造商在与通常用于光子应用的半导体材料P型氮化镓（p-GaN）形成低电阻欧姆电接触方面遇到限制，使得接触对器件的发光是高度透明的。 碳纳米管（CNT）由于其组合的金属和半导体特性以及CNT的织物具有高的光学透明度的事实，可以解决这个问题。 接触方案的物理结构分为三个部分：a）GaN，b）界面材料和c）金属导体。 界面材料的作用是使GaN和金属两者适当地接触，这样GaN又将与将器件与外部电路接口的金属导体进行良好的电接触。 提供了一种使用CNT和金属制造与GaN接触的方法，同时保持了GaN表面的保护。

    METHOD OF FORMING A CARBON NANOTUBE-BASED CONTACT TO SEMICONDUCTOR
    5.
    发明申请
    METHOD OF FORMING A CARBON NANOTUBE-BASED CONTACT TO SEMICONDUCTOR 有权
    基于碳纳米管的接触到半导体的方法

    公开(公告)号：US20090173964A1

    公开(公告)日：2009-07-09

    申请号：US11708929

    申请日：2007-02-21

    申请人： Jonathan W. Ward ,  Benjamin Schlatka ,  Mitchell Meinhold ,  Robert F. Smith ,  Brent M. Segal

    发明人： Jonathan W. Ward ,  Benjamin Schlatka ,  Mitchell Meinhold ,  Robert F. Smith ,  Brent M. Segal

    IPC分类号： H01L33/00 ,  B32B15/04 ,  B32B9/00 ,  H01L21/44

    CPC分类号： H01L33/40 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/452 ,  H01L33/32 ,  Y10S438/924 ,  Y10T428/30 ,  Y10T428/31678

    摘要： Manufacturers encounter limitations in forming low resistance ohmic electrical contact to semiconductor material P-type Gallium Nitride (p-GaN), commonly used in photonic applications, such that the contact is highly transparent to the light emission of the device. Carbon nanotubes (CNTs) can address this problem due to their combined metallic and semiconducting characteristics in conjunction with the fact that a fabric of CNTs has high optical transparency. The physical structure of the contact scheme is broken down into three components, a) the GaN, b) an interface material and c) the metallic conductor. The role of the interface material is to make suitable contact to both the GaN and the metal so that the GaN, in turn, will make good electrical contact to the metallic conductor that interfaces the device to external circuitry. A method of fabricating contact to GaN using CNTs and metal while maintaining protection of the GaN surface is provided.

    摘要翻译： 制造商在与通常用于光子应用的半导体材料P型氮化镓（p-GaN）形成低电阻欧姆电接触方面遇到限制，使得接触对器件的发光是高度透明的。 碳纳米管（CNT）由于其组合的金属和半导体特性以及CNT的织物具有高的光学透明度的事实，可以解决这个问题。 接触方案的物理结构分为三个部分：a）GaN，b）界面材料和c）金属导体。 界面材料的作用是使GaN和金属两者适当地接触，这样GaN又将与将器件与外部电路接口的金属导体进行良好的电接触。 提供了一种使用CNT和金属制造与GaN接触的方法，同时保持了GaN表面的保护。

    Method of Forming a Carbon Nanotube-Based Contact to Semiconductor
    6.
    发明申请
    Method of Forming a Carbon Nanotube-Based Contact to Semiconductor 有权
    与半导体形成碳纳米管接触的方法

    公开(公告)号：US20100148183A1

    公开(公告)日：2010-06-17

    申请号：US12506878

    申请日：2009-07-21

    申请人： Jonathan W. Ward ,  Benjamin Schlatka ,  Michell Meinhold ,  Robert F. Smith ,  Brent M. Segal

    发明人： Jonathan W. Ward ,  Benjamin Schlatka ,  Michell Meinhold ,  Robert F. Smith ,  Brent M. Segal

    IPC分类号： H01L29/20 ,  H01L33/00

    CPC分类号： H01L33/40 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/452 ,  H01L33/32 ,  Y10S438/924 ,  Y10T428/30 ,  Y10T428/31678

    摘要： Manufacturers encounter limitations in forming low resistance ohmic electrical contact to semiconductor material P-type Gallium Nitride (p-GaN), commonly used in photonic applications, such that the contact is highly transparent to the light emission of the device. Carbon nanotubes (CNTs) can address this problem due to their combined metallic and semiconducting characteristics in conjunction with the fact that a fabric of CNTs has high optical transparency. The physical structure of the contact scheme is broken down into three components, a) the GaN, b) an interface material and c) the metallic conductor. The role of the interface material is to make suitable contact to both the GaN and the metal so that the GaN, in turn, will make good electrical contact to the metallic conductor that interfaces the device to external circuitry. A method of fabricating contact to GaN using CNTs and metal while maintaining protection of the GaN surface is provided.

    摘要翻译： 制造商在与通常用于光子应用的半导体材料P型氮化镓（p-GaN）形成低电阻欧姆电接触方面遇到限制，使得接触对器件的发光是高度透明的。 碳纳米管（CNT）由于其组合的金属和半导体特性以及CNT的织物具有高的光学透明度的事实，可以解决这个问题。 接触方案的物理结构分为三个部分：a）GaN，b）界面材料和c）金属导体。 界面材料的作用是使GaN和金属两者适当地接触，这样GaN又将与将器件与外部电路接口的金属导体进行良好的电接触。 提供了一种使用CNT和金属制造与GaN接触的方法，同时保持了GaN表面的保护。

    METHODS AND APPARATUS FOR CONFORMAL SENSING OF FORCE AND/OR CHANGE IN MOTION
    8.
    发明申请
    METHODS AND APPARATUS FOR CONFORMAL SENSING OF FORCE AND/OR CHANGE IN MOTION 审中-公开
    方法和装置的运动力和/或变化的一致感测

    公开(公告)号：US20130118255A1

    公开(公告)日：2013-05-16

    申请号：US13516486

    申请日：2010-12-17

    申请人： Gilman Callsen ,  Roozbeh Ghaffari ,  William J. Arora ,  Bassel de Graff ,  Benjamin Schlatka ,  Jeffrey D. Carbeck

    发明人： Gilman Callsen ,  Roozbeh Ghaffari ,  William J. Arora ,  Bassel de Graff ,  Benjamin Schlatka ,  Jeffrey D. Carbeck

    IPC分类号： A61B5/11

    CPC分类号： A61B5/11 ,  A42B3/046 ,  A61B5/6803 ,  A61B5/6814 ,  A61B5/6833 ,  A61B7/003 ,  A61B2562/0219 ,  A61B2562/0247 ,  A61B2562/164

    摘要： Sensing a force and/or a change in motion proximate to an arbitrarily-shaped surface via a conformal sensing element (e.g., a pressure sensor, an accelerometer) disposed on a flexible substrate and having a sufficient mechanical coupling to the surface. The conformality of the sensing element facilitates intimate proximity to the surface to ensure accurate sensing. Examples of arbitrarily-shaped surfaces include body parts of a person (e.g., a head). A processor receiving one or more signals from the sensing element may provide information relating to possible injury to a body part (e.g., head trauma) resulting from sensed forces and/or changes in motion. Such information may be conveyed by one or more output devices that provide indications of possible degrees of injury/trauma. A conformal sensing apparatus may be integrated with a protective garment or accessory, such as a helmet, wherein the conformality of the sensing apparatus also ensures sufficient comfort for the wearer.

    摘要翻译： 通过设置在柔性基板上并且具有与表面的足够的机械耦合的共形传感元件（例如，压力传感器，加速度计）来感测靠近任意形状的表面的力和/或运动变化。 传感元件的共形性便于与表面紧密接近以确保准确的感测。 任意形状的表面的示例包括人的身体部位（例如，头部）。 从感测元件接收一个或多个信号的处理器可以提供与由感测到的力和/或运动变化导致的身体部位（例如，头部创伤）的可能损伤有关的信息。 这样的信息可以由提供可能程度的伤害/创伤的指示的一个或多个输出装置来传达。 保形传感装置可以与诸如头盔的防护服或附件集成在一起，其中感测装置的一致性也确保了佩戴者足够的舒适性。