公开(公告)号：US20070135659A1

公开(公告)日：2007-06-14

申请号：US11637674

申请日：2006-12-13

申请人： Jong Chae ,  Won Lee ,  Dong Lee ,  In Park ,  Yong Choe ,  Sung Lee ,  Yeong Kim ,  Jong Park ,  Seong Kang

发明人： Jong Chae ,  Won Lee ,  Dong Lee ,  In Park ,  Yong Choe ,  Sung Lee ,  Yeong Kim ,  Jong Park ,  Seong Kang

IPC分类号： C07C45/28

CPC分类号： C07C45/82 ,  B01J23/002 ,  B01J23/04 ,  B01J23/28 ,  B01J23/30 ,  B01J23/888 ,  B01J2523/00 ,  C07C45/36 ,  C07C45/81 ,  C07C47/544 ,  B01J2523/48 ,  B01J2523/69 ,  B01J2523/14

摘要： The present invention relates to a method for preparing an aromatic dialdehyde, comprising, a) a step of gas phase oxidation reaction for preparing aromatic dialdehyde from dimethyl benzene; b) a step of separation for selectively recovering crude aromatic dialdehyde of molten phase from the reaction product of the step (a); and c) a step of purification for obtaining highly pure aromatic dialdehyde by purifying said crude aromatic dialdehyde, and a manufacturing system used for the preparation method. The method for preparation of the aromatic dialdehyde according to the present invention is simple, effective, and advantageous in that highly pure aromatic dialdehyde can be continuously prepared.

摘要翻译： 本发明涉及一种制备芳族二醛的方法，包括：a）从二甲基苯制备芳族二醛的气相氧化反应步骤; b）从步骤（a）的反应产物中选择性回收熔融相的粗芳族二醛的分离步骤; 和c）通过纯化所述粗芳族二醛获得高纯度芳族二醛的纯化步骤和用于制备方法的制造系统。 本发明的芳香二醛制备方法简单，有效，有利于连续制备高纯度芳香二醛。

公开(公告)号：US20070046568A1

公开(公告)日：2007-03-01

申请号：US11410675

申请日：2006-04-24

申请人： Jae Shim ,  Yeong Kim ,  Jae Oh

发明人： Jae Shim ,  Yeong Kim ,  Jae Oh

IPC分类号： G09G3/10

CPC分类号： H01J9/02 ,  H01J11/12 ,  H01J11/24 ,  H01J11/44 ,  H01J2211/444

摘要： Disclosed is a non-photosensitive black electrode composition and a plasma display panel having a black electrode formed using the composition. The black electrode for the plasma display panel includes the non-photosensitive composition, thus yellowing does not occur on electrodes but conductivity to a transparent electrode layer is desirably assured even though typical conductive powder and various types of black pigments are used. It is possible to conduct patterning using a photolithography process due to the simultaneous development of black and bus electrodes, which can act as electrodes due to simultaneous sintering. Since it is non-photosensitive, it is possible to use various types of black pigments, thus the material cost is reduced.

摘要翻译： 公开了一种非感光黑色电极组合物和具有使用该组合物形成的黑色电极的等离子体显示面板。 用于等离子体显示面板的黑色电极包括非光敏组合物，因此即使使用典型的导电粉末和各种类型的黑色颜料，也希望确保透明电极层的导电性。 由于同时开发由于同时烧结而可以作为电极的黑色和母线电极，因此可以使用光刻工艺进行图案化。 由于它是非光敏的，所以可以使用各种类型的黑色颜料，从而降低了材料成本。

公开(公告)号：US20060128051A1

公开(公告)日：2006-06-15

申请号：US11246893

申请日：2005-10-07

申请人： Yeong Kim

发明人： Yeong Kim

IPC分类号： H01L21/00

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14689

摘要： A method of fabricating a CMOS image sensor is disclosed that enhances device robustness. The method includes the steps of forming a metal pad on a pad area of a substrate, forming a planarizing layer on the substrate including the metal pad, removing a portion of the planarizing layer to open a surface of the metal pad, forming a protective layer over the substrate including the metal pad, coating a color filter resist layer on the protective layer and selectively exposing the color filter resist layer, coating a microlens resist layer on the color filter resist layer and selectively exposing the microlens resist layer, developing the exposed color filter and microlens resist layers, forming a pad opening by selectively removing the protective layer to open a surface of the metal, and reflowing the microlens pattern.

摘要翻译： 公开了一种制造CMOS图像传感器的方法，其增强了设备的鲁棒性。 该方法包括以下步骤：在衬底的焊盘区域上形成金属焊盘，在包括金属焊盘的衬底上形成平坦化层，去除平坦化层的一部分以打开金属焊盘的表面，形成保护层 在包括金属焊盘的衬底之上，在保护层上涂覆滤色器抗蚀剂层并选择性地暴露滤色器抗蚀剂层，在滤色器抗蚀剂层上涂覆微透镜抗蚀剂层并选择性地暴露微透镜抗蚀剂层，显影曝光的颜色 过滤器和微透镜抗蚀剂层，通过选择性地去除保护层以打开金属的表面并回流微透镜图案而形成焊盘开口。

公开(公告)号：US20050075312A1

公开(公告)日：2005-04-07

申请号：US10786613

申请日：2004-02-23

申请人： Robert Linhardt ,  Yeong Kim

发明人： Robert Linhardt ,  Yeong Kim

IPC分类号： A61K20060101 ,  A61K31/715 ,  A61K31/737 ,  C07H13/12

CPC分类号： A61K31/715 ,  A61K31/737

摘要： The present invention provides pharmaceutical compositions for the treatment of cancer and inhibiting an increase in the volume or mass of a tumor, and methods for the treatment of cancer and inhibiting an increase in the volume or mass of a tumor.

摘要翻译： 本发明提供了用于治疗癌症并抑制肿瘤体积或质量增加的药物组合物，以及用于治疗癌症和抑制肿瘤体积或质量增加的方法。

公开(公告)号：US20070205682A1

公开(公告)日：2007-09-06

申请号：US10592684

申请日：2006-01-17

申请人： Soung Choi ,  Seong Jeong ,  Yeong Kim ,  Hung Cho ,  In Ahn

发明人： Soung Choi ,  Seong Jeong ,  Yeong Kim ,  Hung Cho ,  In Ahn

IPC分类号： H02K16/02 ,  H02K1/22 ,  H02K16/00

CPC分类号： D06F37/304 ,  H02K1/148 ,  H02K7/14 ,  H02K16/02 ,  H02K21/12

摘要： Abstract: A dual rotor type motor of the present invention is disclosed. The dual rotor type motor according to the present invention includes a shaft rotatably provided in a motor securing part; a rotor assembly rotated with a center thereof fastened to the shaft, the rotor assembly comprising an outer rotor spaced apart at a predetermined distance from the center of the shaft with magnets secured along a circumferential direction, and an inner rotor provided in an inside of the outer rotor at a predetermined distance spaced apart with magnets secured along a circumferential direction; and a stator comprising a core made of metal, an insulator of an insulating material for surrounding the core so as to have a first and second surface of the core facing each other to be exposed outside, a coil wound on the outer surface of the insulator, a molding part of insulating material for surrounding the insulator and the coil by insert molding as one body to expose the first and second surface of the core in a state of the insulator being provided in a circular shape and a fixing part for securing the molding part to the motor securing part, and the stator provided between the outer rotor and the inner rotor for having the exposed first and second surface of the core to face each other at a predetermined distance with the magnet of the outer and inner rotor.

摘要翻译： 摘要：公开了一种本发明的双转子式电动机。 根据本发明的双转子式电动机包括可旋转地设置在电动机固定部分中的轴; 转子组件，其中心被固定在轴上，该转子组件包括一个外转子，该外转子与轴的中心隔开一定距离，其中沿着圆周方向固定的磁体，以及设置在该内转子内侧的内转子 外转子与沿圆周方向固定的磁体隔开预定距离; 以及定子，其包括由金属制成的芯，用于围绕所述芯的绝缘材料的绝缘体，以使得所述芯的第一和第二表面彼此面对以暴露在外部;卷绕在所述绝缘体的外表面上的线圈 绝缘材料的成型部分，用于通过嵌入成型作为一体来包围绝缘体和线圈，以在绝缘体设置成圆形的状态下露出芯的第一和第二表面，以及用于固定模制件的固定部件 设置在外转子和内转子之间的定子，用于使芯的暴露的第一和第二表面与外转子和内转子的磁体以预定的距离彼此面对。

公开(公告)号：US20050191835A1

公开(公告)日：2005-09-01

申请号：US11010764

申请日：2004-12-13

申请人： Yeong Kim

发明人： Yeong Kim

IPC分类号： H01L21/24 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/44 ,  H01L21/4763

CPC分类号： H01L29/66545 ,  H01L21/28052 ,  H01L29/66651

摘要： Methods for fabricating a semiconductor device with salicide are disclosed. One example method includes forming a gate electrode structure having a gate oxide film, a gate electrode, and a protection film stacked on a substrate in succession, and gate spacers on sidewalls of the stack of the gate oxide film, the gate electrode, and the protection film; forming an insulating film on an entire surface of the substrate, the insulating film exposing upper portions of the gate electrode and the gate spacers; and removing portions of the protection film and the gate spacers, to expose an upper portion of the gate electrode. The example method may also include applying a salicide forming metal on an entire surface of the substrate; and performing a heat treatment process to form salicide on the gate electrode and the gate spacers, selectively.

摘要翻译： 公开了制造具有自对准硅化物的半导体器件的方法。 一个示例性方法包括：依次形成具有栅极氧化膜，栅极电极和保护膜的栅极电极结构，栅极氧化膜，栅电极和栅极电极的叠层的侧壁上的栅极间隔 保护膜; 在所述基板的整个表面上形成绝缘膜，所述绝缘膜暴露所述栅极电极和所述栅极间隔物的上部; 以及去除保护膜和栅极间隔物的部分，以露出栅电极的上部。 该示例性方法还可以包括在所述基底的整个表面上施加形成自杀化合物的金属; 并且选择性地进行热处理工艺以在栅极电极和栅极间隔物上形成硅化物。

公开(公告)号：US20060220556A1

公开(公告)日：2006-10-05

申请号：US11148927

申请日：2005-06-09

申请人： Yeong Kim ,  Kuninori Okamoto ,  Jae Shim

发明人： Yeong Kim ,  Kuninori Okamoto ,  Jae Shim

IPC分类号： H01J17/49

CPC分类号： H01J9/02 ,  H01J11/12 ,  H01J11/38 ,  H01J11/44 ,  H01J2211/444

摘要： Disclosed herein is a plasma display panel and a method of fabricating the same. The plasma display panel comprises a front glass substrate and a rear glass substrate. An electrode structure disposed between the front and rear glass substrates is prepared in such a way that a non-photosensitive black dielectric layer and a non-photosensitive or photosensitive electrode layer, formed on the front glass substrate, are subjected to heat treatment. The black dielectric layer is blackened at a surface in contact with the front glass substrate by the heat treatment. Current flows between an upper electrode and a transparent electrode and it is possible to assure sufficiently low visibility even though costly metal particles are not used as conductive material on the front substrate of the plasma display panel. It is possible to use various types of black pigments thanks to non-photosensitivity, thus it is possible to fabricate a low-priced plasma display panel due to a reduced material cost.

摘要翻译： 本文公开了等离子体显示面板及其制造方法。 等离子体显示面板包括前玻璃基板和后玻璃基板。 以前述玻璃基板上形成的非感光性黑色电介质层和非感光性或感光性电极层进行热处理的方式配置配置在前后玻璃基板之间的电极结构。 黑色电介质层通过热处理在与前玻璃基板接触的表面变黑。 电流在上电极和透明电极之间流动，并且即使昂贵的金属颗粒不用作等离子体显示面板的前基板上的导电材料，也可以确保足够低的可视性。 由于非感光性，可以使用各种类型的黑色颜料，因此可以降低材料成本，从而制造低价等离子体显示面板。

公开(公告)号：US20060208215A1

公开(公告)日：2006-09-21

申请号：US11420928

申请日：2006-05-30

申请人： Craig Metzner ,  Shreyas Kher ,  Yeong Kim ,  M. Rocklein ,  Steven George

发明人： Craig Metzner ,  Shreyas Kher ,  Yeong Kim ,  M. Rocklein ,  Steven George

IPC分类号： C04B35/00

CPC分类号： H01L21/0228 ,  C23C16/308 ,  C23C16/34 ,  C23C16/40 ,  C23C16/45531 ,  H01L21/02148 ,  H01L21/02205 ,  H01L21/02208 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/318 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： The present invention generally is a method for forming a high-k dielectric layer, comprising depositing a hafnium compound by atomic layer deposition to a substrate, comprising, delivering a hafnium precursor to a surface of the substrate, reacting the hafnium precursor and forming a hafnium containing layer to the surface, delivering a nitrogen precursor to the hafnium containing layer, forming at least one hafnium nitrogen bond and depositing the hafnium compound to the surface.

摘要翻译： 本发明通常是形成高k电介质层的方法，包括通过原子层沉积将铪化合物沉积到衬底上，包括将铪前体输送到衬底的表面，使铪前体反应并形成铪 将含氮的前体输送到含铪层，形成至少一个铪氮键并将铪化合物沉积到表面。

公开(公告)号：US20060141759A1

公开(公告)日：2006-06-29

申请号：US11319616

申请日：2005-12-29

申请人： Yeong Kim

发明人： Yeong Kim

IPC分类号： H01L21/44

CPC分类号： H01L23/5258 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/05624 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014

摘要： A method of forming a pad and a fuse in a semiconductor device. A copper layer located in both a fuse region and a pad region is formed in a dielectric layer. A first insulating layer is formed on the dielectric layer to cover the copper layer and selectively etched to expose the copper layer in the fuse region. An aluminum fuse is formed on the first insulating layer in the fuse region and connected to the exposed copper layer. A second insulating layer is formed on both the aluminum fuse and the first insulating layer and selectively etched together with the first insulating layer to expose the underlying copper layer in the pad region. An aluminum pad is formed on the second insulating layer in the pad region and connected to the exposed copper layer in the pad region. At least one third insulating layer is formed on both the aluminum pad and the second insulating layer and selectively etched to expose the aluminum pad only.

摘要翻译： 一种在半导体器件中形成焊盘和熔丝的方法。 在电介质层中形成位于熔丝区域和焊盘区域中的铜层。 在电介质层上形成第一绝缘层以覆盖铜层并选择性地蚀刻以在熔融区域中露出铜层。 在保险丝区域的第一绝缘层上形成铝熔丝，并连接到暴露的铜层。 在铝熔丝和第一绝缘层上形成第二绝缘层，并与第一绝缘层一起选择性地蚀刻以暴露焊盘区域中的下面的铜层。 在焊盘区域中的第二绝缘层上形成铝焊盘，并连接到焊盘区域中的暴露的铜层。 在铝焊盘和第二绝缘层上形成至少一个第三绝缘层，并且选择性地蚀刻以仅露出铝焊盘。

公开(公告)号：US20050153531A1

公开(公告)日：2005-07-14

申请号：US11024437

申请日：2004-12-30

申请人： Yeong Kim

发明人： Yeong Kim

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L29/66545 ,  H01L21/823481 ,  H01L29/6656

摘要： A method of forming a gate electrode of a semiconductor device includes forming a damascene pattern for fabricating a metal electrode on an upper part of a poly silicon gate so as to prevent a metal electrode from being oxidized when the poly silicon electrode and the metal electrode are formed simultaneously. The method of forming the gate electrode of the semiconductor device includes the steps of forming a gate including poly silicon with a plurality of layers at an upper part of a silicon substrate, forming a spacer on a sidewall of the gate, vapor depositing inter layer dielectric between gates at the upper part of the substrate, forming a damascene pattern to which a metal electrode is formed, and completing the gate electrode including poly silicon and metal by filling the damascene pattern with a predetermined metal and planarizing the metal.

摘要翻译： 形成半导体器件的栅电极的方法包括在多晶硅栅极的上部形成用于制造金属电极的镶嵌图案，以防止当多晶硅电极和金属电极为 同时形成。 形成半导体器件的栅电极的方法包括以下步骤：在硅衬底的上部形成包括具有多层的多晶硅的栅极，在栅极的侧壁上形成隔离物，蒸镀沉积层间电介质 在基板的上部的栅极之间形成金属电极形成的镶嵌图案，并且通过用预定金属填充镶嵌图案并使金属平坦化来完成包括多晶硅和金属的栅电极。