摘要:
The present invention relates to a composition comprising extracts of Gramineae plant that improves cell viability under hypoxic conditions by inhibiting apoptosis. Thus, the extract of Triticum aestivum L., one of the Gramineae plant, of the present invention, in particular, prevents damage of brain, heart and kidney in animal models of ischemic diseases, and it also improves memory in an animal model of Alzheimer's disease. Therefore, a composition comprising extracts of Gramineae can be used as therapeutic agents or health care foods for preventing and treating ischemic diseases and degenerative brain diseases.
摘要:
The present invention relates to a sensor comprising a material which generates an electrical signal in response to elongation. More particularly, the present invention is directed to an apparatus for measuring a length or volume change, which comprises a sensor comprising a piezoelectric material which generates an electrical signal in response to elongation.
摘要:
A spin transfer torque memory device and a method for manufacturing the same. The spin transfer torque memory device comprises a MRAM cell using a MTJ and a vertical transistor. A common source line is formed in the bottom of the vertical transistor, thereby obtaining the high-integrated and simplified memory device.
摘要:
A magnetic memory device and a method for manufacturing the same are disclosed. The magnetic memory device includes a plurality of gates formed on a semiconductor substrate, a source line connected to a source/drain region shared between the gates neighboring with each other, a plurality of magnetic tunnel junctions connected to non-sharing source/drain regions of the gates on a one-to-one basis, and a bit line connected to the magnetic tunnel junctions. The magnetic memory device applies a magnetic memory cell to a memory so as to manufacture a higher-integration magnetic memory, and uses the magnetic memory cell based on a transistor of a DRAM cell, resulting in an increase in the availability of the magnetic memory.
摘要:
A spin transfer torque memory device and a method for manufacturing the same. The spin transfer torque memory device comprises a MRAM cell using a MTJ and a vertical transistor. A common source line is formed in the bottom of the vertical transistor, thereby obtaining the high-integrated and simplified memory device.
摘要:
Disclosed is an optical sheet having an optical structure, such as a prism film or sheet, which is a constituent of a backlight unit. In the optical sheet, protrusions are formed on the optical structure layer, and thus light-collecting efficiency in a front direction is maintained, and a function of diffusing light to the front or the inclined surface is also exhibited, thus eliminating the need to additionally mount a diffusion film or a protection film, thereby obviating the use of a plurality of optical films, consequently making it possible to economically manufacture a backlight unit with improved productivity.
摘要:
Provided is a versatile bag, including: a containing portion, one side of which is open, thereby forming a main containing chamber for storing belongings; and a deformable portion, which changes the shape thereof, thereby covering the main containing chamber or covering the outside of the containing portion. Embodiments of the present invention can implement a bag that has various shapes and uses.
摘要:
The present invention discloses a three-dimensional decoration. A three-dimensional decoration in accordance with a first embodiment of the present invention includes: a lenticular lens; a first image layer arranged on a rear side of the lenticular lens; a first cover arranged on a front side of the lenticular lens; and a first spacer configured for separating the first cover from the lenticular lens in such a way that a first spatial layer is formed in between the first cover and the lenticular lens. An image of the first image layer is three-dimensionally formed in the first spatial layer by binocular parallax through the lenticular lens.
摘要:
A magnetic memory device and a method for manufacturing the same are disclosed. The magnetic memory device includes a plurality of gates formed on a semiconductor substrate, a source line connected to a source/drain region shared between the gates neighboring with each other, a plurality of magnetic tunnel junctions connected to non-sharing source/drain regions of the gates on a one-to-one basis, and a bit line connected to the magnetic tunnel junctions. The magnetic memory device applies a magnetic memory cell to a memory so as to manufacture a higher-integration magnetic memory, and uses the magnetic memory cell based on a transistor of a DRAM cell, resulting in an increase in the availability of the magnetic memory.
摘要:
Disclosed is a memory card reader recovering memory card. The memory card reader recovering memory card according to an embodiment of the present invention may comprise a first interfacing unit interfacing with a memory card, a first storing unit storing a recovery program for recovering any deleted or impaired data in the memory card, a control unit executing the recovery program for the deleted or impaired data at a recovery mode and a display unit displaying a file list of both data stored in the memory card and the data recovered on a display screen.