公开(公告)号：US5418186A

公开(公告)日：1995-05-23

申请号：US275550

申请日：1994-07-15

申请人： Jong-han Park ,  Chun-geun Park ,  Seon-ho Ha

发明人： Jong-han Park ,  Chun-geun Park ,  Seon-ho Ha

IPC分类号： H01L21/60 ,  H01L21/44

CPC分类号： H01L24/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/1147 ,  H01L2224/11901 ,  H01L2224/13007 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01094 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/19043 ,  H01L2924/3025

摘要： A method for manufacturing a bump on a semiconductor comprising the steps of: forming metal pad on a portion of a surface of a substrate, forming a barrier metal layer over the surface of the substrate such that the barrier metal layer cover the metal pad, forming a photoresist layer over the barrier metal layer, forming an opening in the photoresist layer to expose a portion of the barrier metal layer overlaying the metal pad, forming a chip bump in the opening, selectively removing the photoresist layer using the bump as a mask, such that residual portions of the photoresist layer remain, and such that portions of the barrier metal layer are exposed, etching the exposed portions of the barrier metal layer using the residual photoresist layer as a mask, and removing the residual photoresist layer.

摘要翻译： 一种用于制造半导体上的凸块的方法，包括以下步骤：在衬底的表面的一部分上形成金属焊盘，在衬底的表面上形成阻挡金属层，使得阻挡金属层覆盖金属焊盘，形成 在所述阻挡金属层上方的光致抗蚀剂层，在所述光致抗蚀剂层中形成开口以暴露覆盖所述金属焊盘的所述阻挡金属层的一部分，在所述开口中形成芯片凸块，使用所述凸块作为掩模选择性地去除所述光致抗蚀剂层， 使得光致抗蚀剂层的残留部分保留，并且使得阻挡金属层的部分暴露，使用残留的光致抗蚀剂层作为掩模蚀刻阻挡金属层的暴露部分，并除去残留的光致抗蚀剂层。

公开(公告)号：US5856411A

公开(公告)日：1999-01-05

申请号：US665231

申请日：1996-06-17

申请人： Sang-jun Choi ,  Chun-geun Park

发明人： Sang-jun Choi ,  Chun-geun Park

IPC分类号： G03F7/039 ,  C08F4/04 ,  C08F12/06 ,  C08F12/08 ,  C08F212/00 ,  G03F7/032 ,  C08C19/22 ,  C08F12/24

CPC分类号： C08F12/06

摘要： Resins for use in chemically amplified resists are represented by the general formula (I): ##STR1## wherein R.sub.1 is t-butyl or tetrahydropyranyl; R.sub.2 is hydrogen or methyl; n and m are integers; and the ratio n/((m+n) ranges from 0.1 to 0.9. Methods for manufacturing the resins comprise reacting a monomer represented by the formula (II): ##STR2## with a monomer represented by the formula (III): ##STR3## to form a copolymer represented by the formula (IV): ##STR4## wherein R.sub.1 and R.sub.2 are defined as above; and hydrolyzing acetoxy groups contained in the copolymer represented by the formula (IV) to form the resin compositions.

摘要翻译： 用于化学放大抗蚀剂的树脂由通式（I）表示：其中R 1是叔丁基或四氢吡喃基; R2是氢或甲基; n和m是整数; 并且n /（（m + n）的比率为0.1〜0.9。制造树脂的方法包括使由式（II）表示的单体：＆lt; IMAGE＆gt;与由式（III）表示的单体反应：＆lt; IMAGE 以形成由式（IV）表示的共聚物：其中R1和R2如上定义;和水解由式（IV）表示的共聚物中所含的乙酰氧基以形成树脂组合物。

公开(公告)号：US5593725A

公开(公告)日：1997-01-14

申请号：US304197

申请日：1994-09-12

申请人： Chun-geun Park ,  Gi-sung Yeo ,  Jung-chul Park

发明人： Chun-geun Park ,  Gi-sung Yeo ,  Jung-chul Park

IPC分类号： G03F7/11 ,  G03F7/09 ,  G03F7/40 ,  H01L21/027 ,  H01L21/312 ,  B05D5/00 ,  B05D5/06

CPC分类号： H01L21/0276 ,  G03F7/091 ,  Y10S438/952

摘要： A method for manufacturing an anti-reflective layer comprises the steps of coating a polymer solution containing at least one compound selected from the group consisting of phenol-based resins, water-soluble resins and acryl resins as a main component, and then baking at a high temperature. The method is simplified and the layer's reflectance is greatly enhanced.

摘要翻译： 制造抗反射层的方法包括以下步骤：将含有至少一种选自苯酚类树脂，水溶性树脂和丙烯酸树脂的化合物作为主要成分的聚合物溶液进行涂布，然后在 高温。 该方法简化，层反射率大大提高。

公开(公告)号：US06416927B1

公开(公告)日：2002-07-09

申请号：US09675500

申请日：2000-09-29

申请人： Sang-jun Choi ,  Chun-geun Park ,  Young-bum Koh

发明人： Sang-jun Choi ,  Chun-geun Park ,  Young-bum Koh

IPC分类号： G03F7004

CPC分类号： C08F220/18 ,  C08F222/06 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/111 ,  Y10S430/115

摘要： Copolymers and terpolyers are used in chemically amplified resists. The terpolymers are of the formula: wherein R3 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R4 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R5 is selected from the group consisting of hydrogen and methyl; R6 is selected from the group consisting of t-butyl and tetrahydropyranyl; m and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.

摘要翻译： 共聚物和三聚体用于化学增强抗蚀剂。 三元共聚物具有下式：其中R 3选自氢和C 1至C 10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基 ; R4选自氢和C1至C10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基; R5选自氢和甲基; R6选自叔丁基和四氢吡喃基; m和n分别为整数; 并且其中n /（m + n）为约0.1至约0.5。

公开(公告)号：US06171754B2

公开(公告)日：2001-01-09

申请号：US09124597

申请日：1998-07-29

申请人： Sang-jun Choi ,  Chun-geun Park ,  Young-bum Koh

发明人： Sang-jun Choi ,  Chun-geun Park ,  Young-bum Koh

IPC分类号： B03F7004

CPC分类号： C08F220/18 ,  C08F222/06 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/111 ,  Y10S430/115

摘要： Copolymers and terpolyers are used in chemically amplified resists. The terpolymers are of the formula: wherein R3 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R4 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R5 is selected from the group consisting of hydrogen and methyl; R6 is selected from the group consisting of t-butyl and tetrahydropyranyl; m and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.

摘要翻译： 共聚物和三聚体用于化学增强抗蚀剂。 三元共聚物具有下式：其中R 3选自氢和C 1至C 10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基 ; R4选自氢和C1至C10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基; R5选自氢和甲基; R6选自叔丁基和四氢吡喃基; m和n分别为整数; 并且其中n /（m + n）为约0.1至约0.5。

公开(公告)号：US6103845A

公开(公告)日：2000-08-15

申请号：US805212

申请日：1997-02-27

申请人： Sang-jun Choi ,  Chun-geun Park ,  Young-bum Koh

发明人： Sang-jun Choi ,  Chun-geun Park ,  Young-bum Koh

IPC分类号： C08F220/12 ,  C08F220/18 ,  C08F220/28 ,  C08F222/06 ,  C08F232/08 ,  C08G61/08 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

CPC分类号： C08F220/18 ,  C08F222/06 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/111 ,  Y10S430/115

摘要： Copolymers and terpolyers are used in chemically amplified resists. The terpolymers are of the formula: ##STR1## wherein R.sub.3 is selected from the group consisting of hydrogen and a C.sub.1 to C.sub.10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R.sub.4 is selected from the group consisting of hydrogen and a C.sub.1 to C.sub.10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R.sub.5 is selected from the group consisting of hydrogen and methyl; R.sub.6 is selected from the group consisting of t-butyl and tetrahydropyranyl; m and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.

摘要翻译： 共聚物和三聚体用于化学增强抗蚀剂。 三元共聚物具有下式：其中R 3选自氢和C 1至C 10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基 ; R4选自氢和C1至C10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基; R5选自氢和甲基; R6选自叔丁基和四氢吡喃基; m和n分别为整数; 并且其中n /（m + n）为约0.1至约0.5。

公开(公告)号：US5981141A

公开(公告)日：1999-11-09

申请号：US942249

申请日：1997-10-01

申请人： Sang-jun Choi ,  Chun-geun Park ,  Hai-won Lee

发明人： Sang-jun Choi ,  Chun-geun Park ,  Hai-won Lee

IPC分类号： G03F7/004 ,  C08F30/08 ,  C08L43/04 ,  G03F7/039 ,  G03F7/075 ,  G03C1/72

CPC分类号： G03F7/0758 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111

摘要： In general, the invention provides polymers which may be used in chemically amplified resists. More particularly, the invention relates to esterified polymers containing the group: ##STR1## Resist compositions comprise the esterified polymers and photoacid generators.

公开(公告)号：US5847063A

公开(公告)日：1998-12-08

申请号：US843446

申请日：1997-04-16

申请人： Sang-jun Choi ,  Chun-geun Park

发明人： Sang-jun Choi ,  Chun-geun Park

IPC分类号： G03F7/039 ,  C08F4/04 ,  C08F12/06 ,  C08F12/08 ,  C08F212/00 ,  G03F7/032 ,  C08F20/10

CPC分类号： C08F12/06

摘要： Resins for use in chemically amplified resists are represented by the general formula (I): ##STR1## wherein R.sub.1 is t-butyl or tetrahydropyranyl; R.sub.2 is hydrogen or methyl; n and m are integers; and the ratio n/((m+n) ranges from 0.1 to 0.9. Methods for manufacturing the resins comprise reacting a monomer represented by the formula (II): ##STR2## with a monomer represented by the formula (III): ##STR3## to form a copolymer represented by the formula (IV): ##STR4## wherein R.sub.1 and R.sub.2 are defined as above; and hydrolyzing acetoxy groups contained in the copolymer represented by the formula (IV) to form the resin compositions.

公开(公告)号：US5733704A

公开(公告)日：1998-03-31

申请号：US705723

申请日：1996-08-30

申请人： Sang-jun Choi ,  Chun-geun Park

发明人： Sang-jun Choi ,  Chun-geun Park

IPC分类号： G03F7/004 ,  G03F7/039 ,  H01L21/027

CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/111

摘要： A resist composition by which high resolution patterns can be formed in a lithography process, due to its high sensitivity to light and large difference in solubilities in a developing solution before and after exposure to light, and which has excellent thermal characteristics. The resist composition is suitable for manufacturing highly integrated semiconductor chips.

摘要翻译： 由于其对光的高灵敏度和在曝光前后的显影液中的溶解度的大的差异，并且具有优异的热特性，因此可以在光刻工艺中形成高分辨率图案的抗蚀剂组合物。 抗蚀剂组合物适用于制造高度集成的半导体芯片。

公开(公告)号：US06713229B2

公开(公告)日：2004-03-30

申请号：US10153474

申请日：2002-05-21

申请人： Sang-jun Choi ,  Chun-geun Park ,  Young-bum Koh

发明人： Sang-jun Choi ,  Chun-geun Park ,  Young-bum Koh

IPC分类号： G03F7004

CPC分类号： C08F220/18 ,  C08F222/06 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/111 ,  Y10S430/115

摘要： Copolymers and terpolyers are used in chemically amplified resists. The terpolymers are of the formula: wherein R3 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R4 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R5 is selected from the group consisting of hydrogen and methyl; R6 is selected from the group consisting of t-butyl and tetrahydropyranyl; m and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.

摘要翻译： 共聚物和三聚体用于化学增强抗蚀剂。 三元共聚物具有下式：其中R 3选自氢和C 1至C 10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基 ; R4选自氢和C1至C10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基; R5选自氢和甲基; R6选自叔丁基和四氢吡喃基; m和n分别为整数; 并且其中n /（m + n）为约0.1至约0.5。