公开(公告)号：US20120228581A1

公开(公告)日：2012-09-13

申请号：US13215628

申请日：2011-08-23

申请人： Jongil HWANG ,  Hung Hung ,  Yasushi Hattori ,  Rei Hashimoto ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

发明人： Jongil HWANG ,  Hung Hung ,  Yasushi Hattori ,  Rei Hashimoto ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

IPC分类号： H01L33/06 ,  H01L33/32

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/22 ,  H01S5/3063 ,  H01S2304/04

摘要： The semiconductor light emitting device according to an embodiment includes an N-type nitride semiconductor layer, a nitride semiconductor active layer disposed on the N-type nitride semiconductor layer, and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor layer includes an aluminum gallium nitride layer. The indium concentration in the aluminum gallium nitride layer is between 1E18 atoms/cm3 and 1E20 atoms/cm3 inclusive. The carbon concentration is equal to or less than 6E17 atoms/cm3. Where the magnesium concentration is denoted by X and the acceptor concentration is denoted by Y, Y>{(−5.35e19)2−(X−2.70e19)2}1/2−4.63e19 holds.

摘要翻译： 根据实施例的半导体发光器件包括N型氮化物半导体层，设置在N型氮化物半导体层上的氮化物半导体有源层和设置在有源层上的P型氮化物半导体层。 P型氮化物半导体层包括氮化镓铝层。 氮化镓铝层中的铟浓度在​​1E18原子/ cm3至1E20原子/ cm3之间。 碳浓度等于或小于6E17原子/ cm3。 当镁浓度用X表示，受主浓度用Y表示时，Y> {（ - 5.35e19）2-（X-2.70e19）2} 1 / 2-4.63e19成立。

公开(公告)号：US08729575B2

公开(公告)日：2014-05-20

申请号：US13215628

申请日：2011-08-23

申请人： Jongil Hwang ,  Hung Hung ,  Yasushi Hattori ,  Rei Hashimoto ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

发明人： Jongil Hwang ,  Hung Hung ,  Yasushi Hattori ,  Rei Hashimoto ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L31/072

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/22 ,  H01S5/3063 ,  H01S2304/04

摘要： The semiconductor light emitting device according to an embodiment includes an N-type nitride semiconductor layer, a nitride semiconductor active layer disposed on the N-type nitride semiconductor layer, and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor layer includes an aluminum gallium nitride layer. The indium concentration in the aluminum gallium nitride layer is between 1E18 atoms/cm3 and 1E20 atoms/cm3 inclusive. The carbon concentration is equal to or less than 6E17 atoms/cm3. Where the magnesium concentration is denoted by X and the acceptor concentration is denoted by Y, Y>{(−5.35e19)2−(X−2.70e19)2}1/2−4.63e19 holds.

摘要翻译： 根据实施例的半导体发光器件包括N型氮化物半导体层，设置在N型氮化物半导体层上的氮化物半导体有源层和设置在有源层上的P型氮化物半导体层。 P型氮化物半导体层包括氮化镓铝层。 氮化镓铝层中的铟浓度在​​1E18原子/ cm3至1E20原子/ cm3之间。 碳浓度等于或小于6E17原子/ cm3。 当镁浓度用X表示，受主浓度用Y表示时，Y> {（ - 5.35e19）2-（X-2.70e19）2} 1 / 2-4.63e19成立。

公开(公告)号：US20120007113A1

公开(公告)日：2012-01-12

申请号：US13032907

申请日：2011-02-23

申请人： Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

发明人： Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

IPC分类号： H01L33/26

CPC分类号： H01L33/06 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，阱层，阻挡层，含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。 阱层，阻挡层，含Al层和中间层随后设置在n型半导体层和p型半导体层之间。 含Al层具有比阻挡层更大的带隙能量，比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。 中间层具有比阱层更大的带隙能量，并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。 第一部分的带隙能量小于第二部分的带隙能量。

公开(公告)号：US08649408B2

公开(公告)日：2014-02-11

申请号：US12874440

申请日：2010-09-02

申请人： Rei Hashimoto ,  Maki Sugai ,  Jongil Hwang ,  Yasushi Hattori ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

发明人： Rei Hashimoto ,  Maki Sugai ,  Jongil Hwang ,  Yasushi Hattori ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

IPC分类号： H01S5/00

CPC分类号： H01S5/2231 ,  H01S5/02461

摘要： According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe.

摘要翻译： 根据一个实施例，提供了具有高可靠性和优异散热的半导体激光器件。 半导体激光器件包括有源层，有源层上的p型半导体层，通过蚀刻到p型半导体层中形成的一对沟槽，被一对沟槽夹着的条纹并具有脊状，以及 一对由绝缘体制成的掩埋层，以埋置凹槽。 沟槽的底面随着条纹的距离增加而变浅。

公开(公告)号：US08457167B2

公开(公告)日：2013-06-04

申请号：US12873821

申请日：2010-09-01

申请人： Maki Sugai ,  Shinji Saito ,  Rei Hashimoto ,  Yasushi Hattori ,  Jongil Hwang ,  Masaki Tohyama ,  Shinya Nunoue

发明人： Maki Sugai ,  Shinji Saito ,  Rei Hashimoto ,  Yasushi Hattori ,  Jongil Hwang ,  Masaki Tohyama ,  Shinya Nunoue

IPC分类号： H01S5/00

CPC分类号： H01L33/30 ,  H01S5/22 ,  H01S5/323

摘要： Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less.

摘要翻译： 实施例描述了在低电压下驱动且对于切割非常好的半导体激光器件及其制造方法。 在一个实施例中，半导体激光器件包括GaN衬底; 形成在所述GaN衬底上的半导体层; 形成在半导体层中的脊; 形成在GaN衬底的底表面中的凹部。 凹槽的深度小于GaN衬底的厚度。 该器件还具有比形成在GaN衬底的侧表面上的凹部更深的凹口，并且与凹部分离。 在半导体激光器件中，GaN衬底和半导体层的总厚度为100μm以上，并且，突起的顶面与凹部的底面之间的距离为5μm以上且50μm以下。 。

公开(公告)号：US20110216799A1

公开(公告)日：2011-09-08

申请号：US12874440

申请日：2010-09-02

申请人： Rei Hashimoto ,  Maki Sugai ,  Jongil Hwang ,  Yasushi Hattori ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

发明人： Rei Hashimoto ,  Maki Sugai ,  Jongil Hwang ,  Yasushi Hattori ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

IPC分类号： H01S5/223 ,  H01S5/323

CPC分类号： H01S5/2231 ,  H01S5/02461

摘要： According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe.

摘要翻译： 根据一个实施例，提供了具有高可靠性和优异散热的半导体激光器件。 半导体激光器件包括有源层，有源层上的p型半导体层，通过蚀刻到p型半导体层中形成的一对沟槽，被一对沟槽夹着的条纹并具有脊状，以及 一对由绝缘体制成的掩埋层，以埋置凹槽。 沟槽的底面随着条纹的距离增加而变浅。

公开(公告)号：US20110216554A1

公开(公告)日：2011-09-08

申请号：US12876675

申请日：2010-09-07

申请人： Yasushi HATTORI ,  Masaki Tohyama ,  Shinji Saito ,  Shinya Nunoue ,  Rei Hashimoto ,  Jongil Hwang ,  Maki Sugai ,  Takanobu Ueno ,  Junichi Kinoshita ,  Misaki Ueno

发明人： Yasushi HATTORI ,  Masaki Tohyama ,  Shinji Saito ,  Shinya Nunoue ,  Rei Hashimoto ,  Jongil Hwang ,  Maki Sugai ,  Takanobu Ueno ,  Junichi Kinoshita ,  Misaki Ueno

IPC分类号： F21V7/22

CPC分类号： F21V7/22

摘要： An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to efficiently obtain visible light having high uniformity of a luminance distribution. The light emitting device has a semiconductor laser diode that emits a laser beam. And the device has a light guide component that includes an upper surface, a lower surface, two side faces opposite each other, and two end faces opposite each other, the laser beam being incident from a first end face of the light guide component, the light guide component having indentation in the lower surface, the laser beam being reflected by the lower surface and emitted in an upper surface direction. The light emitting device also has a luminous component that is provided on an upper surface side of the light guide component and absorbs the laser beam emitted from the light guide component and emits visible light. And the device has a substance that is in contact with the lower surface and two side faces of the light guide component, a refractive index of the substance being lower than that of the light guide component.

摘要翻译： 本发明的实施例提供了一种发光器件，其中使用半导体激光二极管作为光源以有效地获得具有高亮度分布均匀性的可见光。 发光器件具有发射激光束的半导体激光二极管。 该装置具有导光部件，该导光部件包括上表面，下表面，彼此相对的两个侧面以及彼此相对的两个端面，激光束从光导部件的第一端面入射， 导光部件在下表面具有凹陷，激光束被下表面反射并在上表面方向上发射。 发光装置还具有设置在导光部件的上表面侧的发光部件，并且吸收从导光部件发射的激光束并发出可见光。 并且该装置具有与导光部件的下表面和两个侧面接触的物质，该物质的折射率低于导光部件的折射率。

公开(公告)号：US09093588B2

公开(公告)日：2015-07-28

申请号：US13032907

申请日：2011-02-23

申请人： Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

发明人： Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

IPC分类号： H01L33/26 ,  H01L33/06 ,  H01L33/32

CPC分类号： H01L33/06 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，阱层，阻挡层，含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。 阱层，阻挡层，含Al层和中间层随后设置在n型半导体层和p型半导体层之间。 含Al层具有比阻挡层更大的带隙能量，比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。 中间层具有比阱层更大的带隙能量，并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。 第一部分的带隙能量小于第二部分的带隙能量。

公开(公告)号：US20110157864A1

公开(公告)日：2011-06-30

申请号：US12876774

申请日：2010-09-07

申请人： Yasushi HATTORI ,  Masaki Tohyama ,  Shinji Saito ,  Shinya Nunoue ,  Maki Sugai ,  Rei Hashimoto

发明人： Yasushi HATTORI ,  Masaki Tohyama ,  Shinji Saito ,  Shinya Nunoue ,  Maki Sugai ,  Rei Hashimoto

IPC分类号： F21V9/16

CPC分类号： F21K9/68 ,  G02F1/133615 ,  G02F2001/133614

摘要： According to embodiments, a light emitting device is provided. The light emitting device includes a semiconductor laser diode that emits a laser beam; first and second sidewalls that are disposed along a central beam axis of the laser beam with opposite each other; a phosphor layer that is provided between the first and second sidewalls, the phosphor layer including an incidence surface of the laser beam, the incidence surface being provided while inclined with respect to the central beam axis, the phosphor layer absorbing the laser beam to emit visible light on the incidence surface side; a slit that is provided on the incidence surface side of the phosphor layer to take out the visible light, the slit including a longitudinal direction and a crosswise direction, the longitudinal direction being disposed along a direction of the central beam axis; and a reflector that is provided on the slit side of the semiconductor laser diode so as not to intersect the central beam axis, the reflector reflecting part of the laser beam toward the phosphor layer.

摘要翻译： 根据实施例，提供了一种发光器件。 发光器件包括发射激光束的半导体激光二极管; 第一和第二侧壁沿着激光束的中心束轴设置，彼此相对; 设置在第一和第二侧壁之间的磷光体层，所述荧光体层包括激光束的入射表面，所述入射表面相对于所述中心束轴倾斜设置，所述荧光体层吸收所述激光束以发射可见光 光在入射面一侧; 狭缝，其设置在所述荧光体层的入射面侧以取出所述可见光，所述狭缝包括纵向和横向，所述纵向方向沿着所述中心射束轴线的方向设置; 以及设置在半导体激光二极管的狭缝侧以不与中心束轴相交的反射器，反射器将激光束的一部分反射向荧光体层。

公开(公告)号：US08348468B2

公开(公告)日：2013-01-08

申请号：US12876738

申请日：2010-09-07

申请人： Yasushi Hattori ,  Shinji Saito ,  Shinya Nunoue ,  Masaki Tohyama

发明人： Yasushi Hattori ,  Shinji Saito ,  Shinya Nunoue ,  Masaki Tohyama

IPC分类号： F21V11/02

CPC分类号： F21K9/64 ,  F21K9/232 ,  F21V3/00 ,  F21Y2101/00 ,  F21Y2115/30

摘要： An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to emit visible light in a wide range. The light emitting device includes a semiconductor laser diode that emits a laser beam; and a luminescent component that is provided while separated from the semiconductor laser diode and absorbs the laser beam to emit the visible light. In the light emitting device, the luminescent component includes an optical path through which the laser beam is incident to a center portion of the luminescent component.

摘要翻译： 本发明的实施例提供了一种发光器件，其中使用半导体激光二极管作为光源来发射宽范围的可见光。 发光器件包括发射激光束的半导体激光二极管; 以及与半导体激光二极管分离并吸收激光束以发出可见光的发光元件。 在发光装置中，发光部件包括激光束入射到发光部件的中心部分的光路。