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    Chemically amplified positive photoresist composition
    1.
    发明授权
    Chemically amplified positive photoresist composition 失效
    化学扩增的正性光致抗蚀剂组合物

    公开(公告)号：US06268106B1

    公开(公告)日：2001-07-31

    申请号：US09337434

    申请日：1999-06-21

    申请人： Joo-Hyeon Park ,  Dong-Chul Seo ,  Sun-Yi Park ,  Seong-Ju Kim

    发明人： Joo-Hyeon Park ,  Dong-Chul Seo ,  Sun-Yi Park ,  Seong-Ju Kim

    IPC分类号： G03F7004

    CPC分类号： G03F7/039 ,  G03F7/0045

    摘要： A chemical amplification positive amplification which can be formed into resist patterns much improved in transparency, photosensitivity and resolution and is suitable to KrF and ArF excimer lasers, enabling a submicrolithography process to be as exquisite as 0.2 &mgr;m or less. This composition is based on a copolymer of the formula I, ranging, in polystyrene-reduced weight average molecular weight, from 3,000 to 50,000 with a molecular weight distribution (Mw/Mn) of 1.0 to 2.0, and a low molecular weight compound of the formula VI:

    摘要翻译： 化学放大阳性扩增可以形成抗蚀剂图案，其透明度，光敏度和分辨率大大提高，适用于KrF和ArF准分子激光器，使得亚微光刻工艺的精细度可达0.2μm或更小。 该组合物是基于式I的共聚物，以聚苯乙烯换算的重均分子量为3,000至50,000，分子量分布（Mw / Mn）为1.0至2.0，以及低分子量化合物 公式VI：

    Sulfonium salt and its manufacturing method
    2.
    发明授权
    Sulfonium salt and its manufacturing method 有权
    锍盐及其制造方法

    公开(公告)号：US6111143A

    公开(公告)日：2000-08-29

    申请号：US140955

    申请日：1998-08-27

    申请人： Joo-Hyeon Park ,  Dong-Chul Seo ,  Sun-Yi Park ,  Seong-Ju Kim

    发明人： Joo-Hyeon Park ,  Dong-Chul Seo ,  Sun-Yi Park ,  Seong-Ju Kim

    IPC分类号： C07C381/00 ,  C07C309/06 ,  C07C381/12 ,  G03F7/004 ,  G03F7/029 ,  C07C315/00

    CPC分类号： C07C381/12 ,  Y02P20/55

    摘要： This invention relates to a sulfonium salt, including its manufacturing method, which is effectively used as a photoacid initiator or radical photoinitiator during polymerization and a photoacid generator, leaving the protection groups of organic compounds, especially as an useful photoacid generator of the chemically amplified photoresist employed in semiconductor materials. Since the sulfonium salt of this invention, so prepared via one-step reaction between sulfoxide compound and aromatic compound in the presence of perfluoroalkanesulfonic anhydride, has the advantages in that by overcoming some shortcomings of the prior art to prepare the sulfonium salt via two steps using Grinard reagent, this invention may provide a novel sulfonium salt with higher yield which cannot be achieved in the prior art and also to prepare even any conventional sulfonium salt having better yield.

    摘要翻译： 本发明涉及一种锍盐，包括其制造方法，其在聚合期间有效地用作光酸引发剂或自由基光引发剂，并且光酸产生剂，留下有机化合物的保护基团，特别是作为化学放大光致抗蚀剂的有用的光致酸产生剂 半导体材料。 由于在全氟烷基磺酸酐存在下通过亚砜化合物和芳族化合物之间的一步反应制备的本发明的锍盐的优点在于克服现有技术的一些缺点，通过两步使用 格林纳特试剂，本发明可以提供一种在现有技术中无法实现的更高产率的新型锍盐，并且甚至制备任何具有较好产率的常规锍盐。

    Polymer for radiation-sensitive resist and resist composition containing the same
    3.
    发明授权
    Polymer for radiation-sensitive resist and resist composition containing the same 有权
    用于辐射敏感抗蚀剂的聚合物和含有它的抗蚀剂组合物

    公开(公告)号：US06369143B1

    公开(公告)日：2002-04-09

    申请号：US09337437

    申请日：1999-06-21

    申请人： Joo-Hyeon Park ,  Seong-Ju Kim ,  Dong-Chul Seo ,  Sun-Yi Park

    发明人： Joo-Hyeon Park ,  Seong-Ju Kim ,  Dong-Chul Seo ,  Sun-Yi Park

    IPC分类号： C08J541

    CPC分类号： G03F7/039 ,  C08G61/08 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/115

    摘要： A radiation-sensitive polymer and a chemical amplification resist composition based on the polymer, which can be easily controlled in sensitivity by regulating the content and kind of the carboxylic acid-grafted norbornene derivatives in the matrix polymer and is superior in adherence to substrate and dry etch resistance, so that it can be formed into resist patterns improved in transparency, photosensitivity and resolution by use of KrF or ArF excimer lasers. The polymer is represented by the formula I: wherein, X is an acid-dissociable grafted norbornene derivative selected from the group consisting of the formulas II and III; Y is a carboxylic acid-grafted norbornene derivative represented by the formula IV, and l, m, n and o each are a repeating number not more than 0.5, satisfying the condition that l+m+n+o=l and 0.4≦o≦0.5:

    摘要翻译： 基于聚合物的辐射敏感聚合物和化学扩增抗蚀剂组合物，其可以通过调节基质聚合物中羧酸接枝的降冰片烯衍生物的含量和种类而容易地控制灵敏度，并且在对基材和干燥的粘附性方面优异 因此可以通过使用KrF或ArF准分子激光器将其形成为提高透明度，光敏性和分辨率的抗蚀剂图案。 聚合物由式I表示：其中X是选自式II和III的酸解离的接枝的降冰片烯衍生物; Y是由式Ⅳ表示的羧酸接枝的降冰片烯衍生物，l，m，n和o各自为不大于0.5的重复数，满足1 + m + n + o = 1和0.4 <= o <= 0.5：

    Polymer and chemically amplified resist composition containing the same
    6.
    发明授权
    Polymer and chemically amplified resist composition containing the same 有权
    含有其的聚合物和化学放大抗蚀剂组合物

    公开(公告)号：US07285373B2

    公开(公告)日：2007-10-23

    申请号：US10940469

    申请日：2004-09-14

    申请人： Young-Taek Lim ,  Joo-Hyeon Park ,  Dong-Chul Seo ,  Chang-Min Kim ,  Seong-Duk Cho ,  Hyun-Sang Joo

    发明人： Young-Taek Lim ,  Joo-Hyeon Park ,  Dong-Chul Seo ,  Chang-Min Kim ,  Seong-Duk Cho ,  Hyun-Sang Joo

    IPC分类号： G03F7/039

    CPC分类号： G03F7/0046 ,  G03F7/0045 ,  G03F7/0395 ,  G03F7/0397

    摘要： A chemically amplified resist composition includes a novel polymer, a photoacid generator, and a solvent.The chemically amplified resist can form a resist pattern that is excellent in adhesiveness with a low dependency to the substrate, transparency at the far ultraviolet wavelength range such as KrF Excimer laser or ArF Excimer laser, dry etch resistance, sensitivity, resolution, and developability. In addition, the polymer contains a maximum number of saturated aliphatic rings to enhance etching resistance, and additionally includes an alkoxyalkyl acrylate monomer introduced as a solution to the problem with the conventional polyacrylate resist in regard to edge roughness of the pattern, to form a uniform edge of the pattern because the alkylalcohol compound generated together with a formaldehyde and a carboxylate compound by a deprotection reaction of the alkoxyalkyl acrylate monomer with an acid acts as a solvent or an antifoaming agent in the pattern.

    摘要翻译： 化学放大抗蚀剂组合物包括新型聚合物，光致酸产生剂和溶剂。 化学放大抗蚀剂可以形成粘合性优异，对基板的依赖性低，抗紫外波长范围如KrF准分子激光器或ArF准分子激光器的透光性，耐干蚀刻性，灵敏度，分辨率和显影性。 此外，聚合物含有最大数量的饱和脂肪族环，以提高耐蚀刻性，并且还包括作为溶液的烷基烷基酯单体引入的常规聚丙烯酸酯抗蚀剂相对于图案的边缘粗糙度的问题，形成均匀的 由于通过丙烯酸烷氧基烷基酯单体与酸的脱保护反应与甲醛和羧酸酯化合物一起产生的烷基醇化合物作为图案中的溶剂或消泡剂，因此图案的边缘。

    Novel polymer and chemically amplified resist composition containing the same
    8.
    发明申请
    Novel polymer and chemically amplified resist composition containing the same 有权
    含有其的新型聚合物和化学增幅抗蚀剂组合物

    公开(公告)号：US20050153236A1

    公开(公告)日：2005-07-14

    申请号：US10940469

    申请日：2004-09-14

    申请人： Young-Taek Lim ,  Joo-Hyeon Park ,  Dong-Chul Seo ,  Chang-Min Kim ,  Seong-Duk Cho ,  Hyun-Sang Joo

    发明人： Young-Taek Lim ,  Joo-Hyeon Park ,  Dong-Chul Seo ,  Chang-Min Kim ,  Seong-Duk Cho ,  Hyun-Sang Joo

    IPC分类号： G03F7/033 ,  C08F212/08 ,  C08F216/12 ,  C08F220/10 ,  C08F222/06 ,  C08F232/00 ,  C08G61/04 ,  G03C1/76 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

    CPC分类号： G03F7/0046 ,  G03F7/0045 ,  G03F7/0395 ,  G03F7/0397

    摘要： The present invention provides a chemically amplified resist composition including a novel polymer, a photoacid generator, and a solvent: The chemically amplified resist can form a resist pattern that is excellent in adhesiveness with a low dependency to the substrate, transparency at the far ultraviolet wavelength range such as KrF Excimer laser or ArF Excimer laser, dry etch resistance, sensitivity, resolution, and developability. In addition, the polymer contains a maximum number of saturated aliphatic rings to enhance etching resistance, and additionally includes an alkoxyalkyl acrylate monomer introduced as a solution to the problem with the conventional polyacrylate resist in regard to edge roughness of the pattern, to form a uniform edge of the pattern because the alkylalcohol compound generated together with a formaldehyde and a carboxylate compound by a deprotection reaction of the alkoxyalkyl acrylate monomer with an acid acts as a solvent or an antifoaming agent in the pattern.

    摘要翻译： 本发明提供一种包含新型聚合物，光酸产生剂和溶剂的化学放大抗蚀剂组合物：化学增幅抗蚀剂可以形成粘合性优异，对基材的依赖性低的抗蚀剂图案，远紫外线波长的透明度 范围如KrF准分子激光器或ArF准分子激光器，干蚀刻电阻，灵敏度，分辨率和显影性。 此外，聚合物含有最大数量的饱和脂肪族环，以提高耐蚀刻性，并且还包括作为溶液的烷基烷基酯单体引入的常规聚丙烯酸酯抗蚀剂相对于图案的边缘粗糙度的问题，形成均匀的 由于通过丙烯酸烷氧基烷基酯单体与酸的脱保护反应与甲醛和羧酸酯化合物一起产生的烷基醇化合物作为图案中的溶剂或消泡剂，因此图案的边缘。

    Water-soluble resin composition and method of forming fine patterns by using the same
    9.
    发明授权
    Water-soluble resin composition and method of forming fine patterns by using the same 失效
    水溶性树脂组合物及使用其形成精细图案的方法

    公开(公告)号：US08765358B2

    公开(公告)日：2014-07-01

    申请号：US13171623

    申请日：2011-06-29

    申请人： Sang Wook Park ,  So Jung Park ,  Dong-Chul Seo

    发明人： Sang Wook Park ,  So Jung Park ,  Dong-Chul Seo

    IPC分类号： G03F7/40 ,  G03F7/30 ,  G03F7/20 ,  C08F232/04 ,  C08F222/38

    CPC分类号： G03F7/405 ,  C08F220/56 ,  C08F220/58 ,  C08F220/60 ,  C08F232/08 ,  C08F2220/281 ,  C08F2220/282

    摘要： A water-soluble resin composition for forming fine patterns comprising water-soluble polymer represented by Chemical Formula 1 as below and the first water-soluble solvent, is coated and heated on a photoresist layer having at least one contact hole to reduce a size of the at least one contact hole. (In Chemical Formula 1, each of R1, R2, R3 and R5 independently represents an alkyl group of C1-30 or an cyclo alkyl group of C3-30 which respectively have one selected from the group consisting of hydrogen, an ether group, an ester group, a carbonyl group, an acetal, an epoxy group, a nitril group, an amine group, and an aldehyde group; each of R4, R6, R7 and R8 independently represents hydrogen or a methyl group; n represents an integer of 0 to 5; a represents a real number of 0.05 to 0.5; each of b, c and d respectively represents a real number of 0 to 0.7; and a+b+c+d=1).

    摘要翻译： 用于形成包含如下化学式1所示的水溶性聚合物的精细图案的水溶性树脂组合物和第一水溶性溶剂在具有至少一个接触孔的光致抗蚀剂层上被涂覆和加热，以减小 至少一个接触孔。 （在化学式1中，R1，R2，R3和R5各自独立地表示C1-30的烷基或C3-30的环烷基，其分别具有选自氢，醚基， 酯基，羰基，缩醛，环氧基，腈基，胺基和醛基; R 4，R 6，R 7和R 8各自独立地表示氢或甲基; n表示0 至5; a表示0.05至0.5的实数; b，c和d分别表示0至0.7的实数; a + b + c + d = 1）。