公开(公告)号：US08765358B2

公开(公告)日：2014-07-01

申请号：US13171623

申请日：2011-06-29

申请人： Sang Wook Park ,  So Jung Park ,  Dong-Chul Seo

发明人： Sang Wook Park ,  So Jung Park ,  Dong-Chul Seo

IPC分类号： G03F7/40 ,  G03F7/30 ,  G03F7/20 ,  C08F232/04 ,  C08F222/38

CPC分类号： G03F7/405 ,  C08F220/56 ,  C08F220/58 ,  C08F220/60 ,  C08F232/08 ,  C08F2220/281 ,  C08F2220/282

摘要： A water-soluble resin composition for forming fine patterns comprising water-soluble polymer represented by Chemical Formula 1 as below and the first water-soluble solvent, is coated and heated on a photoresist layer having at least one contact hole to reduce a size of the at least one contact hole. (In Chemical Formula 1, each of R1, R2, R3 and R5 independently represents an alkyl group of C1-30 or an cyclo alkyl group of C3-30 which respectively have one selected from the group consisting of hydrogen, an ether group, an ester group, a carbonyl group, an acetal, an epoxy group, a nitril group, an amine group, and an aldehyde group; each of R4, R6, R7 and R8 independently represents hydrogen or a methyl group; n represents an integer of 0 to 5; a represents a real number of 0.05 to 0.5; each of b, c and d respectively represents a real number of 0 to 0.7; and a+b+c+d=1).

摘要翻译： 用于形成包含如下化学式1所示的水溶性聚合物的精细图案的水溶性树脂组合物和第一水溶性溶剂在具有至少一个接触孔的光致抗蚀剂层上被涂覆和加热，以减小 至少一个接触孔。 （在化学式1中，R1，R2，R3和R5各自独立地表示C1-30的烷基或C3-30的环烷基，其分别具有选自氢，醚基， 酯基，羰基，缩醛，环氧基，腈基，胺基和醛基; R 4，R 6，R 7和R 8各自独立地表示氢或甲基; n表示0 至5; a表示0.05至0.5的实数; b，c和d分别表示0至0.7的实数; a + b + c + d = 1）。

公开(公告)号：US20120189963A1

公开(公告)日：2012-07-26

申请号：US13171623

申请日：2011-06-29

申请人： Sang Wook PARK ,  So Jung PARK ,  Dong Chul SEO

发明人： Sang Wook PARK ,  So Jung PARK ,  Dong Chul SEO

IPC分类号： G03F7/20 ,  C08K5/05

CPC分类号： G03F7/405 ,  C08F220/56 ,  C08F220/58 ,  C08F220/60 ,  C08F232/08 ,  C08F2220/281 ,  C08F2220/282

摘要： A water-soluble resin composition for forming fine patterns comprising water-soluble polymer represented by Chemical Formula 1 as below and the first water-soluble solvent, is coated and heated on a photoresist layer having at least one contact hole to reduce a size of the at least one contact hole. (In Chemical Formula 1, each of R1, R2, R3 and R5 independently represents an alkyl group of C1-30 or an cyclo alkyl group of C3-30 which respectively have one selected from the group consisting of hydrogen, an ether group, an ester group, a carbonyl group, an acetal, an epoxy group, a nitril group, an amine group, and an aldehyde group; each of R4, R6, R7 and R8 independently represents hydrogen or a methyl group; n represents an integer of 0 to 5; a represents a real number of 0.05 to 0.5; each of b, c and d respectively represents a real number of 0 to 0.7; and a+b+c+d=1)

摘要翻译： 用于形成包含如下化学式1所示的水溶性聚合物的精细图案的水溶性树脂组合物和第一水溶性溶剂在具有至少一个接触孔的光致抗蚀剂层上被涂覆和加热，以减小 至少一个接触孔。 （在化学式1中，R1，R2，R3和R5各自独立地表示C1-30的烷基或C3-30的环烷基，其分别具有选自氢，醚基， 酯基，羰基，缩醛，环氧基，腈基，胺基和醛基; R 4，R 6，R 7和R 8各自独立地表示氢或甲基; n表示0 至5; a表示0.05至0.5的实数; b，c和d分别表示0至0.7的实数; a + b + c + d = 1）

公开(公告)号：US07326520B2

公开(公告)日：2008-02-05

申请号：US11108397

申请日：2005-04-18

申请人： Hyun-Sang Joo ,  Joo-Hyeon Park ,  Dong-Chul Seo ,  Young-Taek Lim ,  Seong-Duk Cho ,  Ji-Young Song ,  Kyoung-Mun Kim

发明人： Hyun-Sang Joo ,  Joo-Hyeon Park ,  Dong-Chul Seo ,  Young-Taek Lim ,  Seong-Duk Cho ,  Ji-Young Song ,  Kyoung-Mun Kim

IPC分类号： G03F7/30 ,  G03F7/038 ,  C08F224/00 ,  C08F236/00

CPC分类号： G03F7/0045 ,  C08F220/18 ,  C08F220/28 ,  C08F232/08 ,  G03F7/0395 ,  Y10S430/168

摘要： The present invention provides a polymer represented by the following formula 1 and a chemically amplified resist composition including the polymer, which resist composition is excellent in adhesion, storage stability and dry etch resistance, with good resolution in both C/H and L/S patterns, and provides a good pattern profile irrespective of the type of the substrate due to its good process window:

摘要翻译： 本发明提供由下式1表示的聚合物和包含聚合物的化学放大型抗蚀剂组合物，该抗蚀剂组合物在C / H和L / S图案中具有优异的粘合性，储存稳定性和耐干蚀刻性，具有良好的分辨率 ，并且由于其良好的工艺窗口而提供了良好的图案轮廓，而不管基材的类型如何：

公开(公告)号：US07285373B2

公开(公告)日：2007-10-23

申请号：US10940469

申请日：2004-09-14

申请人： Young-Taek Lim ,  Joo-Hyeon Park ,  Dong-Chul Seo ,  Chang-Min Kim ,  Seong-Duk Cho ,  Hyun-Sang Joo

发明人： Young-Taek Lim ,  Joo-Hyeon Park ,  Dong-Chul Seo ,  Chang-Min Kim ,  Seong-Duk Cho ,  Hyun-Sang Joo

IPC分类号： G03F7/039

CPC分类号： G03F7/0046 ,  G03F7/0045 ,  G03F7/0395 ,  G03F7/0397

摘要： A chemically amplified resist composition includes a novel polymer, a photoacid generator, and a solvent.The chemically amplified resist can form a resist pattern that is excellent in adhesiveness with a low dependency to the substrate, transparency at the far ultraviolet wavelength range such as KrF Excimer laser or ArF Excimer laser, dry etch resistance, sensitivity, resolution, and developability. In addition, the polymer contains a maximum number of saturated aliphatic rings to enhance etching resistance, and additionally includes an alkoxyalkyl acrylate monomer introduced as a solution to the problem with the conventional polyacrylate resist in regard to edge roughness of the pattern, to form a uniform edge of the pattern because the alkylalcohol compound generated together with a formaldehyde and a carboxylate compound by a deprotection reaction of the alkoxyalkyl acrylate monomer with an acid acts as a solvent or an antifoaming agent in the pattern.

摘要翻译： 化学放大抗蚀剂组合物包括新型聚合物，光致酸产生剂和溶剂。 化学放大抗蚀剂可以形成粘合性优异，对基板的依赖性低，抗紫外波长范围如KrF准分子激光器或ArF准分子激光器的透光性，耐干蚀刻性，灵敏度，分辨率和显影性。 此外，聚合物含有最大数量的饱和脂肪族环，以提高耐蚀刻性，并且还包括作为溶液的烷基烷基酯单体引入的常规聚丙烯酸酯抗蚀剂相对于图案的边缘粗糙度的问题，形成均匀的 由于通过丙烯酸烷氧基烷基酯单体与酸的脱保护反应与甲醛和羧酸酯化合物一起产生的烷基醇化合物作为图案中的溶剂或消泡剂，因此图案的边缘。

公开(公告)号：US06358666B1

公开(公告)日：2002-03-19

申请号：US09616859

申请日：2000-07-14

申请人： Dong Chul Seo ,  Sun Yi Park ,  Joo Hyeon Park ,  Seong Ju Kim

发明人： Dong Chul Seo ,  Sun Yi Park ,  Joo Hyeon Park ,  Seong Ju Kim

IPC分类号： G03F7004

CPC分类号： G03F7/004 ,  C08F232/08 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/115 ,  Y10S430/122

摘要： This invention relates to a chemically amplified positive photoresist composition comprising a multi copolymer copolymer whose repeating units is represented by the following formula I, a low molecular additive represented by the following formula 2 or 3, an acid generator and a solvent wherein the repeating units comprising X and Y are independent monomers, respectively, selected from the group consisting of the following formulae (II), (III) and (IV):

摘要翻译： 本发明涉及一种化学放大型正性光致抗蚀剂组合物，其包含多重共聚物共聚物，其重复单元由下式I表示，低分子量添加剂由下式2或3表示，酸产生剂和溶剂，其中重复单元包含X 和Y分别为选自下式（II），（III）和（IV）的独立单体：

公开(公告)号：US6111143A

公开(公告)日：2000-08-29

申请号：US140955

申请日：1998-08-27

申请人： Joo-Hyeon Park ,  Dong-Chul Seo ,  Sun-Yi Park ,  Seong-Ju Kim

发明人： Joo-Hyeon Park ,  Dong-Chul Seo ,  Sun-Yi Park ,  Seong-Ju Kim

IPC分类号： C07C381/00 ,  C07C309/06 ,  C07C381/12 ,  G03F7/004 ,  G03F7/029 ,  C07C315/00

CPC分类号： C07C381/12 ,  Y02P20/55

摘要： This invention relates to a sulfonium salt, including its manufacturing method, which is effectively used as a photoacid initiator or radical photoinitiator during polymerization and a photoacid generator, leaving the protection groups of organic compounds, especially as an useful photoacid generator of the chemically amplified photoresist employed in semiconductor materials. Since the sulfonium salt of this invention, so prepared via one-step reaction between sulfoxide compound and aromatic compound in the presence of perfluoroalkanesulfonic anhydride, has the advantages in that by overcoming some shortcomings of the prior art to prepare the sulfonium salt via two steps using Grinard reagent, this invention may provide a novel sulfonium salt with higher yield which cannot be achieved in the prior art and also to prepare even any conventional sulfonium salt having better yield.

摘要翻译： 本发明涉及一种锍盐，包括其制造方法，其在聚合期间有效地用作光酸引发剂或自由基光引发剂，并且光酸产生剂，留下有机化合物的保护基团，特别是作为化学放大光致抗蚀剂的有用的光致酸产生剂 半导体材料。 由于在全氟烷基磺酸酐存在下通过亚砜化合物和芳族化合物之间的一步反应制备的本发明的锍盐的优点在于克服现有技术的一些缺点，通过两步使用 格林纳特试剂，本发明可以提供一种在现有技术中无法实现的更高产率的新型锍盐，并且甚至制备任何具有较好产率的常规锍盐。

公开(公告)号：US08617789B2

公开(公告)日：2013-12-31

申请号：US13367896

申请日：2012-02-07

申请人： Jung Hoon Oh ,  Jin Bong Shin ,  Tae Gon Kim ,  Dong Chul Seo

发明人： Jung Hoon Oh ,  Jin Bong Shin ,  Tae Gon Kim ,  Dong Chul Seo

IPC分类号： C07C69/76 ,  G03F7/004

CPC分类号： C07C309/10 ,  C07C381/12 ,  C07C2601/14 ,  C07C2602/42 ,  C07C2603/74 ,  C07D307/33 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/2041

摘要： A photoacid generator represented by the following formula (1), a method for producing the photoacid generator, and a resist composition containing the photoacid generator are provided. wherein in the formula (1), Y1, Y2, X, R1, R2, n1, n2 and A+ have the same meanings as defined in the detailed description of the invention. The photoacid generator can maintain an appropriate contact angle at the time of ArF liquid immersion lithography, can reduce defects occurring during liquid immersion lithography, and has excellent solubility in resist solvents and excellent compatibility with resins. Furthermore, the photoacid generator can be produced by an efficient and simple method using an epoxy compound that is industrially easily available.

摘要翻译： 提供由下式（1）表示的光致酸发生剂，光酸产生剂的制造方法和含有光酸产生剂的抗蚀剂组合物。 其中，在式（1）中，Y1，Y2，X，R1，R2，n1，n2和A +具有与本发明的详细说明中所定义的相同的含义。 光致酸发生器可以在ArF液浸光刻时保持适当的接触角，可以减少液浸光刻过程中发生的缺陷，并且在抗蚀剂溶剂中具有优异的溶解性和与树脂的相容性优异。 此外，光致酸产生剂可以通过使用工业上容易获得的环氧化合物的有效且简单的方法制备。

公开(公告)号：US06268106B1

公开(公告)日：2001-07-31

申请号：US09337434

申请日：1999-06-21

申请人： Joo-Hyeon Park ,  Dong-Chul Seo ,  Sun-Yi Park ,  Seong-Ju Kim

发明人： Joo-Hyeon Park ,  Dong-Chul Seo ,  Sun-Yi Park ,  Seong-Ju Kim

IPC分类号： G03F7004

CPC分类号： G03F7/039 ,  G03F7/0045

摘要： A chemical amplification positive amplification which can be formed into resist patterns much improved in transparency, photosensitivity and resolution and is suitable to KrF and ArF excimer lasers, enabling a submicrolithography process to be as exquisite as 0.2 &mgr;m or less. This composition is based on a copolymer of the formula I, ranging, in polystyrene-reduced weight average molecular weight, from 3,000 to 50,000 with a molecular weight distribution (Mw/Mn) of 1.0 to 2.0, and a low molecular weight compound of the formula VI:

摘要翻译： 化学放大阳性扩增可以形成抗蚀剂图案，其透明度，光敏度和分辨率大大提高，适用于KrF和ArF准分子激光器，使得亚微光刻工艺的精细度可达0.2μm或更小。 该组合物是基于式I的共聚物，以聚苯乙烯换算的重均分子量为3,000至50,000，分子量分布（Mw / Mn）为1.0至2.0，以及低分子量化合物 公式VI：

公开(公告)号：US20120203024A1

公开(公告)日：2012-08-09

申请号：US13367896

申请日：2012-02-07

申请人： Jung Hoon OH ,  Jin Bong Shin ,  Tae Gon Kim ,  Dong Chul Seo

发明人： Jung Hoon OH ,  Jin Bong Shin ,  Tae Gon Kim ,  Dong Chul Seo

IPC分类号： C07C69/753 ,  C07C69/78 ,  C07C69/76 ,  C07C67/14

CPC分类号： C07C309/10 ,  C07C381/12 ,  C07C2601/14 ,  C07C2602/42 ,  C07C2603/74 ,  C07D307/33 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/2041

摘要： A photoacid generator represented by the following formula (1), a method for producing the photoacid generator, and a resist composition containing the photoacid generator are provided. wherein in the formula (1), Y1, Y2, X, R1, R2, n1, n2 and A+ have the same meanings as defined in the detailed description of the invention. The photoacid generator can maintain an appropriate contact angle at the time of ArF liquid immersion lithography, can reduce defects occurring during liquid immersion lithography, and has excellent solubility in resist solvents and excellent compatibility with resins. Furthermore, the photoacid generator can be produced by an efficient and simple method using an epoxy compound that is industrially easily available.

摘要翻译： 提供由下式（1）表示的光致酸发生剂，光酸产生剂的制造方法和含有光酸产生剂的抗蚀剂组合物。 其中，在式（1）中，Y1，Y2，X，R1，R2，n1，n2和A +具有与本发明的详细说明中所定义的相同的含义。 光致酸发生器可以在ArF液浸光刻时保持适当的接触角，可以减少液浸光刻过程中发生的缺陷，并且在抗蚀剂溶剂中具有优异的溶解性和与树脂的相容性优异。 此外，光致酸产生剂可以通过使用工业上容易获得的环氧化合物的有效且简单的方法制备。

公开(公告)号：US08865919B2

公开(公告)日：2014-10-21

申请号：US13341102

申请日：2011-12-30

申请人： Hyun Sang Joo ,  Dong Chul Seo ,  Dae Kyung Yoon ,  Dae Hyeon Shin

发明人： Hyun Sang Joo ,  Dong Chul Seo ,  Dae Kyung Yoon ,  Dae Hyeon Shin

IPC分类号： C07D333/48 ,  G03F7/004 ,  C07C309/06 ,  C07C309/12 ,  C07D333/46 ,  C07D307/64 ,  C07C381/12 ,  G03F7/039

CPC分类号： C07D307/64 ,  C07C309/06 ,  C07C309/12 ,  C07C381/12 ,  C07C2603/74 ,  C07D333/46 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/0397

摘要： A sulfonium compound represented by formula (1), a photo-acid generator, and a method for producing a sulfonium compound are provided: wherein X represents an electron-donating group; R1 and R2 each represent an alkyl group, a cycloalkyl group, or the like; R3 and R4 each represent an arylene group or a heteroarylene group; R5 and R6 each represent an alkyl group, a cycloalkyl group, or the like; and A− and B− are anions that are different from each other. The sulfonium compound, when used as a photo-acid generator, can produce a uniform and excellent resist pattern.

摘要翻译： 提供由式（1）表示的锍化合物，光酸产生剂和锍化合物的制备方法：其中X表示给电子基团; R1和R2各自表示烷基，环烷基等; R 3和R 4各自表示亚芳基或亚杂芳基; R5和R6各自表示烷基，环烷基等; 而A-和B-是彼此不同的阴离子。 当锍化合物用作光酸产生剂时，可以产生均匀且优异的抗蚀剂图案。