公开(公告)号：US07927931B2

公开(公告)日：2011-04-19

申请号：US12762452

申请日：2010-04-19

申请人： Joon Young Yang ,  Jae Young Oh ,  Soopool Kim

发明人： Joon Young Yang ,  Jae Young Oh ,  Soopool Kim

IPC分类号： H01L21/00

CPC分类号： H01L27/1288 ,  H01L27/1214

摘要： A liquid crystal display device may comprise a semiconductor layer on a substrate and including a channel portion and ohmic contact portions at both sides of the channel portion, wherein an edge portion of the semiconductor layer has a side surface of a substantially tapered shape; a gate insulating layer covering the semiconductor layer; a gate electrode on the gate insulating layer and substantially corresponding to the channel portion; source and drain electrodes contacting the semiconductor layer; and a pixel electrode contacting the drain electrode.

摘要翻译： 液晶显示装置可以包括在衬底上的半导体层，并且在通道部分的两侧包括通道部分和欧姆接触部分，其中半导体层的边缘部分具有大致锥形形状的侧表面; 覆盖半导体层的栅极绝缘层; 栅极绝缘层上并基本上对应于沟道部分的栅电极; 源极和漏极接触半导体层; 以及与漏电极接触的像素电极。

公开(公告)号：US20100200862A1

公开(公告)日：2010-08-12

申请号：US12762452

申请日：2010-04-19

申请人： Joon Young YANG ,  Jae Young Oh ,  Soopool Kim

发明人： Joon Young YANG ,  Jae Young Oh ,  Soopool Kim

IPC分类号： H01L33/16

CPC分类号： H01L27/1288 ,  H01L27/1214

摘要： A liquid crystal display device may comprise a semiconductor layer on a substrate and including a channel portion and ohmic contact portions at both sides of the channel portion, wherein an edge portion of the semiconductor layer has a side surface of a substantially tapered shape; a gate insulating layer covering the semiconductor layer; a gate electrode on the gate insulating layer and substantially corresponding to the channel portion; source and drain electrodes contacting the semiconductor layer; and a pixel electrode contacting the drain electrode.

摘要翻译： 液晶显示装置可以包括在衬底上的半导体层，并且在通道部分的两侧包括沟道部分和欧姆接触部分，其中半导体层的边缘部分具有大致锥形形状的侧表面; 覆盖半导体层的栅极绝缘层; 栅极绝缘层上并基本上对应于沟道部分的栅电极; 源极和漏极接触半导体层; 以及与漏电极接触的像素电极。

公开(公告)号：US20070257289A1

公开(公告)日：2007-11-08

申请号：US11591584

申请日：2006-11-02

申请人： Joon Young Yang ,  Jae Young Oh ,  Soopool Kim

发明人： Joon Young Yang ,  Jae Young Oh ,  Soopool Kim

IPC分类号： H01L29/94 ,  H01L29/04 ,  H01L21/84 ,  H01L29/15 ,  H01L21/00 ,  H01L27/108 ,  H01L31/036 ,  H01L29/76 ,  H01L31/119

CPC分类号： H01L27/1288 ,  H01L27/1214

摘要： A liquid crystal display device may comprise a semiconductor layer on a substrate and including a channel portion and ohmic contact portions at both sides of the channel portion, wherein an edge portion of the semiconductor layer has a side surface of a substantially tapered shape; a gate insulating layer covering the semiconductor layer; a gate electrode on the gate insulating layer and substantially corresponding to the channel portion; source and drain electrodes contacting the semiconductor layer; and a pixel electrode contacting the drain electrode.

摘要翻译： 液晶显示装置可以包括在衬底上的半导体层，并且在通道部分的两侧包括通道部分和欧姆接触部分，其中半导体层的边缘部分具有大致锥形形状的侧表面; 覆盖半导体层的栅极绝缘层; 栅极绝缘层上并基本上对应于沟道部分的栅电极; 源极和漏极接触半导体层; 以及与漏电极接触的像素电极。

公开(公告)号：US07727824B2

公开(公告)日：2010-06-01

申请号：US11591584

申请日：2006-11-02

申请人： Joon Young Yang ,  Jae Young Oh ,  Soopool Kim

发明人： Joon Young Yang ,  Jae Young Oh ,  Soopool Kim

IPC分类号： H01L21/00

CPC分类号： H01L27/1288 ,  H01L27/1214

摘要： A liquid crystal display device may comprise a semiconductor layer on a substrate and including a channel portion and ohmic contact portions at both sides of the channel portion, wherein an edge portion of the semiconductor layer has a side surface of a substantially tapered shape; a gate insulating layer covering the semiconductor layer; a gate electrode on the gate insulating layer and substantially corresponding to the channel portion; source and drain electrodes contacting the semiconductor layer; and a pixel electrode contacting the drain electrode.

摘要翻译： 液晶显示装置可以包括在衬底上的半导体层，并且在通道部分的两侧包括沟道部分和欧姆接触部分，其中半导体层的边缘部分具有大致锥形形状的侧表面; 覆盖半导体层的栅极绝缘层; 栅极绝缘层上并基本上对应于沟道部分的栅电极; 源极和漏极接触半导体层; 以及与漏电极接触的像素电极。

公开(公告)号：US20100159623A1

公开(公告)日：2010-06-24

申请号：US12656893

申请日：2010-02-18

申请人： Jae Young Oh ,  Young Seung Jee ,  Jeong Oh Kim ,  Soopool Kim

发明人： Jae Young Oh ,  Young Seung Jee ,  Jeong Oh Kim ,  Soopool Kim

IPC分类号： H01L21/28

CPC分类号： G02F1/136227 ,  G02F1/134363 ,  G02F2001/134372 ,  G02F2201/40

摘要： A method for fabricating a LCD having enhanced aperture ratio and brightness includes: forming a gate line, a gate electrode, a common electrode and a common line in a first mask process; depositing a gate insulating layer covering the gate line, the gate electrode and the common electrode; forming an active layer on the gate insulating layer, and an ohmic contact layer on the active layer in a second mask process; forming a data line, a source electrode, and a drain electrode facing the source electrode in a third mask process; depositing a protective layer over the data line, the source electrode and the drain electrode; forming a pixel contact hole in a fourth mask process; and forming a pixel electrode, wherein the pixel electrode is connected to the drain electrode through the pixel contact hole in a fifth mask process using a reverse tapered photo-resist pattern.

公开(公告)号：US07507593B2

公开(公告)日：2009-03-24

申请号：US11473141

申请日：2006-06-23

申请人： Jae Young Oh ,  Soopool Kim

发明人： Jae Young Oh ,  Soopool Kim

IPC分类号： H01L21/00

CPC分类号： G02F1/1368 ,  G02F2001/136231 ,  G02F2001/136295

摘要： A method for fabricating a liquid crystal display (LCD) device includes: forming a gate line, a gate electrode, and a gate pad electrode on a substrate; sequentially forming a gate insulating layer, a semiconductor layer and a metal layer on an entire surface of the substrate including the gate electrode; forming a first photoresist on the metal layer; patterning the semiconductor layer, a data line, source and drain electrodes, and a data pad electrode by selectively etching the gate insulating layer, the semiconductor layer, and the metal layer using the first photoresist as a mask; forming a second photoresist to cover the gate pad electrode; forming a passivation layer on an entire surface of the substrate including the first and second photoresists; removing the passivation layer on the first and second photoresists by lift-stripping the first and second photoresists; and forming a pixel electrode electrically connected to the drain electrode.

摘要翻译： 一种制造液晶显示器（LCD）器件的方法，包括：在衬底上形成栅极线，栅极电极和栅极焊盘电极; 在包括栅电极的基板的整个表面上依次形成栅极绝缘层，半导体层和金属层; 在所述金属层上形成第一光致抗蚀剂; 通过使用第一光致抗蚀剂作为掩模选择性地蚀刻栅极绝缘层，半导体层和金属层来图案化半导体层，数据线，源极和漏极以及数据焊盘电极; 形成第二光致抗蚀剂以覆盖所述栅极焊盘电极; 在包括第一和第二光致抗蚀剂的基板的整个表面上形成钝化层; 通过剥离第一和第二光致抗蚀剂来去除第一和第二光致抗蚀剂上的钝化层; 以及形成与漏电极电连接的像素电极。

公开(公告)号：US08435814B2

公开(公告)日：2013-05-07

申请号：US13153996

申请日：2011-06-06

申请人： Jae Young Oh ,  Young Seung Jee ,  Jeong Oh Kim ,  Soopool Kim

发明人： Jae Young Oh ,  Young Seung Jee ,  Jeong Oh Kim ,  Soopool Kim

IPC分类号： H01L21/28

CPC分类号： G02F1/136227 ,  G02F1/134363 ,  G02F2001/134372 ,  G02F2201/40

摘要： A method for fabricating a LCD having enhanced aperture ratio and brightness includes: forming a gate line, a gate electrode, a common electrode and a common line in a first mask process; depositing a gate insulating layer covering the gate line, the gate electrode and the common electrode; forming an active layer on the gate insulating layer, and an ohmic contact layer on the active layer in a second mask process; forming a data line, a source electrode, and a drain electrode facing the source electrode in a third mask process; depositing a protective layer over the data line, the source electrode and the drain electrode; forming a pixel contact hole in a fourth mask process; and forming a pixel electrode, wherein the pixel electrode is connected to the drain electrode through the pixel contact hole in a fifth mask process using a reverse tapered photo-resist pattern.

摘要翻译： 一种制造具有增强的开口率和亮度的LCD的方法包括：在第一掩模处理中形成栅极线，栅电极，公共电极和公共线; 沉积覆盖栅极线，栅电极和公共电极的栅极绝缘层; 在栅极绝缘层上形成有源层，在第二掩模工艺中在有源层上形成欧姆接触层; 在第三掩模工艺中形成面对源电极的数据线，源电极和漏电极; 在数据线，源电极和漏电极上沉积保护层; 在第四掩模处理中形成像素接触孔; 以及形成像素电极，其中，在使用倒锥形光刻胶图案的第五掩模处理中，像素电极通过像素接触孔连接到漏电极。

公开(公告)号：US20080123044A1

公开(公告)日：2008-05-29

申请号：US11812949

申请日：2007-06-22

申请人： Jae Young Oh ,  Young Seung Jee ,  Jeong Oh Kim ,  Soopool Kim

发明人： Jae Young Oh ,  Young Seung Jee ,  Jeong Oh Kim ,  Soopool Kim

IPC分类号： G02F1/13

CPC分类号： G02F1/136227 ,  G02F1/134363 ,  G02F2001/134372 ,  G02F2201/40

摘要： A method for fabricating a LCD having enhanced aperture ratio and brightness includes: forming a gate line, a gate electrode, a common electrode and a common line in a first mask process; depositing a gate insulating layer covering the gate line, the gate electrode and the common electrode; forming an active layer on the gate insulating layer, and an ohmic contact layer on the active layer in a second mask process; forming a data line, a source electrode, and a drain electrode facing the source electrode in a third mask process; depositing a protective layer over the data line, the source electrode and the drain electrode; forming a pixel contact hole in a fourth mask process; and forming a pixel electrode, wherein the pixel electrode is connected to the drain electrode through the pixel contact hole in a fifth mask process using a reverse tapered photo-resist pattern.

摘要翻译： 一种制造具有增强的开口率和亮度的LCD的方法包括：在第一掩模处理中形成栅极线，栅电极，公共电极和公共线; 沉积覆盖栅极线，栅电极和公共电极的栅极绝缘层; 在栅极绝缘层上形成有源层，在第二掩模工艺中在有源层上形成欧姆接触层; 在第三掩模工艺中形成面对源电极的数据线，源电极和漏电极; 在数据线，源电极和漏电极上沉积保护层; 在第四掩模处理中形成像素接触孔; 以及形成像素电极，其中，在使用倒锥形光刻胶图案的第五掩模工艺中，像素电极通过像素接触孔连接到漏电极。

公开(公告)号：US20070187689A1

公开(公告)日：2007-08-16

申请号：US11635244

申请日：2006-12-07

申请人： Jae Young Oh ,  Soopool Kim

发明人： Jae Young Oh ,  Soopool Kim

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L27/124 ,  H01L27/1288

摘要： Provided is a liquid crystal display (LCD) device and a fabrication method thereof. An array substrate for the LCD includes a gate line formed on a substrate, and a gate electrode extending from the gate line; a data line intersected with the gate line, wherein the data line is configured with a gate insulating layer, a semiconductor layer and a data metal layer; a pixel electrode formed of a first transparent metal layer at a pixel which is defined by an intersection of the gate line and the data line; a source electrode extending from the data line, and a drain electrode spaced apart from the source electrode by a predetermined distance to expose a channel; and a second transparent metal layer pattern formed on the data line, the source electrode and the drain electrode, wherein the second transparent metal layer connects the drain electrode and the pixel electrode to each other.

摘要翻译： 提供一种液晶显示（LCD）装置及其制造方法。 用于LCD的阵列基板包括形成在基板上的栅极线和从栅极线延伸的栅电极; 与所述栅极线相交的数据线，其中所述数据线由栅极绝缘层，半导体层和数据金属层构成; 由栅极线和数据线的交点限定的像素由第一透明金属层形成的像素电极; 从所述数据线延伸的源电极和与所述源极间隔开预定距离的漏极，以露出沟道; 以及形成在所述数据线，所述源电极和所述漏电极上的第二透明金属层图案，其中所述第二透明金属层将所述漏电极和所述像素电极彼此连接。

公开(公告)号：US20100099205A1

公开(公告)日：2010-04-22

申请号：US12568824

申请日：2009-09-29

申请人： Kang-Il Kim ,  Joon-Young Yang ,  Kye-Chang Song ,  Soopool Kim ,  Young-Kwon Kang

发明人： Kang-Il Kim ,  Joon-Young Yang ,  Kye-Chang Song ,  Soopool Kim ,  Young-Kwon Kang

IPC分类号： H01L33/00

CPC分类号： H01L27/12 ,  G02F1/1368 ,  H01L27/124

摘要： A method of manufacturing a liquid crystal display device is provided which includes ashing first and second photoresist patterns, whereby a copper oxide film is formed at portions of a data line and a source-drain pattern exposed between the ashed first and second photoresist patterns and between the ashed first and second portions of the first photoresist pattern; deoxidizing or removing the copper oxide film; performing a plasma treatment to change the exposed portions of the data line and the source-drain pattern into a copper compound; removing the copper compound using a copper compound removing solution to form source and drain electrodes below the ashed first and second portions, respectively, wherein the copper compound removing solution substantially has no reaction with the copper group material; dry-etching a portion of an ohmic contact layer between the source and drain electrodes using the source and drain electrodes as an etching mask, the ohmic contact layer formed by patterning the impurity-doped amorphous silicon layer.

摘要翻译： 提供了一种制造液晶显示装置的方法，其包括灰化第一和第二光致抗蚀剂图案，由此在数据线和暴露在灰化的第一和第二光致抗蚀剂图案之间的源极 - 漏极图案的部分处形成氧化铜膜， 第一光致抗蚀剂图案的灰色第一和第二部分; 脱氧或除去氧化铜膜; 执行等离子体处理以将数据线和源极 - 漏极图案的暴露部分改变为铜化合物; 使用铜化合物去除溶液除去铜化合物，以分别在灰化的第一和第二部分之下形成源极和漏极，其中铜化合物除去溶液基本上与铜基材料没有反应; 使用源极和漏极作为蚀刻掩模来干蚀刻源极和漏极之间的欧姆接触层的一部分，该欧姆接触层通过图案化掺杂杂质的非晶硅层而形成。