公开(公告)号：US20120273884A1

公开(公告)日：2012-11-01

申请号：US13095690

申请日：2011-04-27

申请人： Joseph A. Yedinak ,  Christopher L. Rexer ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Jaegil Lee ,  Hamza Yilmaz ,  Chongman Yun ,  Dwayne S. Reichl ,  James Pan ,  Rodney S. Ridley, SR. ,  Harold Heidenreich

发明人： Joseph A. Yedinak ,  Christopher L. Rexer ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Jaegil Lee ,  Hamza Yilmaz ,  Chongman Yun ,  Dwayne S. Reichl ,  James Pan ,  Rodney S. Ridley, SR. ,  Harold Heidenreich

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0878 ,  H01L29/045 ,  H01L29/0634 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725

摘要： A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type.

摘要翻译： 功率器件包括半导体区域，该半导体区域又包括多个交替布置的第一和第二导电类型的柱。 第二导电类型的多个柱中的每一个还包括沿着第二导电类型的柱的深度彼此顶部布置的多个第二导电类型的注入区，以及填充有第二导电类型的半导体材料的沟槽部 在第二导电类型的多个植入区域的正上方。

公开(公告)号：US08836028B2

公开(公告)日：2014-09-16

申请号：US13095690

申请日：2011-04-27

申请人： Joseph A. Yedinak ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Jaegil Lee ,  Dwayne S. Reichl ,  Harold Heidenreich

发明人： Joseph A. Yedinak ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Jaegil Lee ,  Dwayne S. Reichl ,  Harold Heidenreich

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L29/40

CPC分类号： H01L29/0878 ,  H01L29/045 ,  H01L29/0634 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725

摘要： In a general aspect, a power device can include at least one N-type epitaxial layer disposed on a substrate and a plurality of N-pillars and P-pillars that define alternating P-N-pillars in the at least one N-type epitaxial layer. The power device can also include an active region and a termination region, where the termination region surrounds the active region. The alternating P-N-pillars can be disposed in both the active region and the termination region, where the termination region can include a predetermined number of floating P-pillars.

摘要翻译： 在一般方面，功率器件可以包括设置在衬底上的至少一个N型外延层和在所述至少一个N型外延层中限定交替的P-N柱的多个N柱和P柱。 功率器件还可以包括有源区和端接区，其中终端区围绕有源区。 交替的P-N柱可以设置在有源区域和终止区域中，其中终止区域可以包括预定数量的浮动P柱。

公开(公告)号：US20120273916A1

公开(公告)日：2012-11-01

申请号：US13095652

申请日：2011-04-27

申请人： Joseph A. Yedinak ,  Christopher L. Rexer ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Jaegil Lee ,  Hamza Yilmaz ,  Chongman Yun ,  Dwayne S. Reichl ,  James Pan ,  Rodney S. Ridley, SR. ,  Harold Heidenreich

发明人： Joseph A. Yedinak ,  Christopher L. Rexer ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Jaegil Lee ,  Hamza Yilmaz ,  Chongman Yun ,  Dwayne S. Reichl ,  James Pan ,  Rodney S. Ridley, SR. ,  Harold Heidenreich

IPC分类号： H01L29/872

CPC分类号： H01L29/0634 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/4238 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/74 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872

摘要： A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type.

公开(公告)号：US20090304469A1

公开(公告)日：2009-12-10

申请号：US12134075

申请日：2008-06-05

申请人： Martin Jalove ,  Harold Heidenreich

发明人： Martin Jalove ,  Harold Heidenreich

IPC分类号： B23B49/00

CPC分类号： B23B47/28 ,  Y10T408/56245

摘要： An assembly for use with a power drill is provided for drilling of locks, the entire assembly being supportable by the drill. The assembly includes a bit and spindle that are advanceable to drill a lock, and includes a registration portion such as a key blank receivable in a key hole of the lock in order to provide the proper position and orientation of the drill for reaching the drill points of the lock. The assembly may includes a first subassembly secured with the drill chuck, and a plurality of second subassemblies mountable on the first subassembly, the second subassemblies having different configurations for different locks or lock types.

摘要翻译： 提供用于电钻的组件用于钻的锁，整个组件可被钻头支撑。 组件包括一个钻头和主轴，其可前进以钻一个锁，并且包括一个对准部分，例如可接收在锁的钥匙孔中的钥匙坯，以便提供用于到达钻头的钻头的适当位置和取向 的锁。 组件可以包括用钻头卡盘固定的第一子组件和可安装在第一子组件上的多个第二子组件，第二子组件具有用于不同锁或锁类型的不同配置。