公开(公告)号：US20120273884A1

公开(公告)日：2012-11-01

申请号：US13095690

申请日：2011-04-27

申请人： Joseph A. Yedinak ,  Christopher L. Rexer ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Jaegil Lee ,  Hamza Yilmaz ,  Chongman Yun ,  Dwayne S. Reichl ,  James Pan ,  Rodney S. Ridley, SR. ,  Harold Heidenreich

发明人： Joseph A. Yedinak ,  Christopher L. Rexer ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Jaegil Lee ,  Hamza Yilmaz ,  Chongman Yun ,  Dwayne S. Reichl ,  James Pan ,  Rodney S. Ridley, SR. ,  Harold Heidenreich

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0878 ,  H01L29/045 ,  H01L29/0634 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725

摘要： A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type.

摘要翻译： 功率器件包括半导体区域，该半导体区域又包括多个交替布置的第一和第二导电类型的柱。 第二导电类型的多个柱中的每一个还包括沿着第二导电类型的柱的深度彼此顶部布置的多个第二导电类型的注入区，以及填充有第二导电类型的半导体材料的沟槽部 在第二导电类型的多个植入区域的正上方。

公开(公告)号：US08836028B2

公开(公告)日：2014-09-16

申请号：US13095690

申请日：2011-04-27

申请人： Joseph A. Yedinak ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Jaegil Lee ,  Dwayne S. Reichl ,  Harold Heidenreich

发明人： Joseph A. Yedinak ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Jaegil Lee ,  Dwayne S. Reichl ,  Harold Heidenreich

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L29/40

CPC分类号： H01L29/0878 ,  H01L29/045 ,  H01L29/0634 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725

摘要： In a general aspect, a power device can include at least one N-type epitaxial layer disposed on a substrate and a plurality of N-pillars and P-pillars that define alternating P-N-pillars in the at least one N-type epitaxial layer. The power device can also include an active region and a termination region, where the termination region surrounds the active region. The alternating P-N-pillars can be disposed in both the active region and the termination region, where the termination region can include a predetermined number of floating P-pillars.

摘要翻译： 在一般方面，功率器件可以包括设置在衬底上的至少一个N型外延层和在所述至少一个N型外延层中限定交替的P-N柱的多个N柱和P柱。 功率器件还可以包括有源区和端接区，其中终端区围绕有源区。 交替的P-N柱可以设置在有源区域和终止区域中，其中终止区域可以包括预定数量的浮动P柱。

公开(公告)号：US20120273916A1

公开(公告)日：2012-11-01

申请号：US13095652

申请日：2011-04-27

申请人： Joseph A. Yedinak ,  Christopher L. Rexer ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Jaegil Lee ,  Hamza Yilmaz ,  Chongman Yun ,  Dwayne S. Reichl ,  James Pan ,  Rodney S. Ridley, SR. ,  Harold Heidenreich

发明人： Joseph A. Yedinak ,  Christopher L. Rexer ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Jaegil Lee ,  Hamza Yilmaz ,  Chongman Yun ,  Dwayne S. Reichl ,  James Pan ,  Rodney S. Ridley, SR. ,  Harold Heidenreich

IPC分类号： H01L29/872

CPC分类号： H01L29/0634 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/4238 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/74 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872

摘要： A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type.

公开(公告)号：US07595542B2

公开(公告)日：2009-09-29

申请号：US11375683

申请日：2006-03-13

申请人： Chanho Park ,  Joseph A. Yedinak ,  Christopher Boguslaw Kocon ,  Jason Higgs ,  Jaegil Lee

发明人： Chanho Park ,  Joseph A. Yedinak ,  Christopher Boguslaw Kocon ,  Jason Higgs ,  Jaegil Lee

IPC分类号： H01L29/93

CPC分类号： H01L29/0634 ,  H01L29/0696 ,  H01L29/7811 ,  H01L2924/0002 ,  H01L2924/00

摘要： A charge balance semiconductor power device comprises an active area having strips of p pillars and strips of n pillars arranged in an alternating manner, the strips of p and n pillars extending along a length of the active area. A non-active perimeter region surrounds the active area, and includes at least one p ring surrounding the active area. One end of at last one of the strips of p pillars extending immediately adjacent an edge of the active area terminates at a substantially straight line at which one end of each of the remainder of the strips of p pillars also end. The straight line extends perpendicular to the length of the active area along which the strips of n and p pillars extend.

摘要翻译： 电荷平衡半导体功率器件包括有源区，其具有p柱的条带和以交替方式布置的n个柱的条带，沿着有源区的长度延伸的p和n柱的条带。 非活动周边区域包围有源区域，并且包括围绕有源区域的至少一个p环。 最后一根直立在有源区域边缘上的p柱条的一端终止于大致直线，其中p柱的每条剩余的条的一端也结束。 直线垂直于有源区域的长度延伸，n和p柱的条带沿着该区域的长度延伸。

公开(公告)号：US08786010B2

公开(公告)日：2014-07-22

申请号：US13095664

申请日：2011-04-27

申请人： Joseph A. Yedinak ,  Christopher L. Rexer ,  Jaegil Lee ,  Hamza Yilmaz ,  Chongman Yun

发明人： Joseph A. Yedinak ,  Christopher L. Rexer ,  Jaegil Lee ,  Hamza Yilmaz ,  Chongman Yun

IPC分类号： H01L29/06

CPC分类号： H01L29/7813 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/872

摘要： A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type.

摘要翻译： 功率器件包括半导体区域，该半导体区域又包括多个交替布置的第一和第二导电类型的柱。 第二导电类型的多个支柱中的每一个还包括沿着第二导电类型的柱的深度彼此顶部布置的多个第二导电类型的注入区域，以及填充有第二导电类型的半导体材料的沟槽部分 在第二导电类型的多个植入区域的正上方。

公开(公告)号：US20120273871A1

公开(公告)日：2012-11-01

申请号：US13095664

申请日：2011-04-27

申请人： Joseph A. Yedinak ,  Christopher L. Rexer ,  Jaegil Lee ,  Hamza Yilmaz ,  Chongman Yun

发明人： Joseph A. Yedinak ,  Christopher L. Rexer ,  Jaegil Lee ,  Hamza Yilmaz ,  Chongman Yun

IPC分类号： H01L29/78 ,  H01L21/20 ,  H01L21/336 ,  H01L29/02

CPC分类号： H01L29/7813 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/872

摘要： A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type.

公开(公告)号：US07855415B2

公开(公告)日：2010-12-21

申请号：US12032123

申请日：2008-02-15

申请人： Ashok Challa ,  Jaegil Lee ,  Jinyoung Jung ,  Hocheol Jang

发明人： Ashok Challa ,  Jaegil Lee ,  Jinyoung Jung ,  Hocheol Jang

IPC分类号： H01L29/78

CPC分类号： H01L29/407 ,  H01L21/26586 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/6835 ,  H01L23/4952 ,  H01L23/49816 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7805 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815 ,  H01L29/7828 ,  H01L29/7831 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H02M3/00 ,  H02M3/33592 ,  H02M7/48 ,  Y02B70/1475 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region, source regions having the first conductivity type formed in the well region adjacent the active trench, and a first termination trench extending below the well region and disposed at an outer edge of an active region of the device. The sidewalls and bottom of the active trench are lined with dielectric material, and substantially filled with a first conductive layer forming an upper electrode and a second conductive layer forming a lower electrode, the upper electrode being disposed above the lower electrode and separated therefrom by inter-electrode dielectric material. The first termination trench can be lined with a layer of dielectric material that is thicker than the dielectric material lining the sidewalls of the active trench, and is substantially filled with conductive material.

摘要翻译： 半导体功率器件包括第一导电类型的漂移区域，在漂移区域上方延伸并且具有与第一导电类型相反的第二导电类型的阱区域，延伸穿过阱区域并进入漂移区域的有源沟槽，源极区域 具有形成在邻近有源沟槽的阱区中的第一导电类型，以及在阱区下延伸并设置在器件的有源区的外边缘处的第一端接沟槽。 有源沟槽的侧壁和底部衬有介电材料，并且基本上填充有形成上电极的第一导电层和形成下电极的第二导电层，上电极设置在下电极之上， 电介质材料。 第一端接沟槽可以衬有一层电介质材料，其比在有源沟槽侧壁上的电介质材料更厚，并且基本上填充有导电材料。

公开(公告)号：US08786045B2

公开(公告)日：2014-07-22

申请号：US12878429

申请日：2010-09-09

申请人： Ashok Challa ,  Jaegil Lee ,  Jinyoung Jung ,  Hocheol Jang

发明人： Ashok Challa ,  Jaegil Lee ,  Jinyoung Jung ,  Hocheol Jang

IPC分类号： H01L29/78

CPC分类号： H01L29/407 ,  H01L21/26586 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/6835 ,  H01L23/4952 ,  H01L23/49816 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7805 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815 ,  H01L29/7828 ,  H01L29/7831 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H02M3/00 ,  H02M3/33592 ,  H02M7/48 ,  Y02B70/1475 ,  H01L2924/00 ,  H01L2924/00014

摘要： In one general aspect, a termination structure can include a plurality of pillars of a first conductivity type formed inside a termination region of a second conductivity type opposite the first conductivity type where the plurality of pillars define a plurality of concentric rings surrounding an active area of a semiconductor device. The termination structure can include a conductive field plate where the plurality of pillars includes a first pillar coupled to the conductive field plate. The termination structure can include a dielectric layer where the plurality of pillars include a second pillar insulated by the dielectric layer from a portion of the conductive field plate disposed directly above the second pillar included in the plurality of pillars.

摘要翻译： 在一个一般方面，端接结构可以包括形成在与第一导电类型相反的第二导电类型的端接区域内的第一导电类型的多个柱，其中多个柱限定围绕有源区域的多个同心环 半导体器件。 端接结构可以包括导电场板，其中多个柱包括耦合到导电场板的第一柱。 终端结构可以包括电介质层，其中多个柱包括由介电层绝缘的第二柱，所述第二柱与设置在多个柱中所包括的第二柱正上方的导电场板的一部分绝缘。

公开(公告)号：US20090079002A1

公开(公告)日：2009-03-26

申请号：US12234549

申请日：2008-09-19

申请人： Jaegil Lee ,  Hocheol Jang

发明人： Jaegil Lee ,  Hocheol Jang

IPC分类号： H01L23/62

CPC分类号： H01L29/66712 ,  H01L21/02532 ,  H01L21/26513 ,  H01L21/30604 ,  H01L29/0615 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1075 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A power device includes an active region and a termination region surrounding the active region. A plurality of pillars of first and second conductivity type are alternately arranged in each of the active and termination regions. The pillars of first conductivity type in the active and termination regions have substantially the same width, and the pillars of second conductivity type in the active region have a smaller width than the pillars of second conductivity type in the termination region so that a charge balance condition in each of the active and termination regions results in a higher breakdown voltage in the termination region than in the active region.

摘要翻译： 功率器件包括有源区和围绕有源区的端接区。 多个第一和第二导电类型的柱交替布置在每个有源端子区域和端接区域中。 在有源和终端区域中的第一导电类型的柱具有基本上相同的宽度，并且有源区中的第二导电类型的柱具有比端接区域中的第二导电类型的柱小的宽度，使得电荷平衡条件 在每个有源和终止区域中，终端区域中的击穿电压高于有源区域。

公开(公告)号：US20070210341A1

公开(公告)日：2007-09-13

申请号：US11375683

申请日：2006-03-13

申请人： Chanho Park ,  Joseph Yedinak ,  Christopher Kocon ,  Jason Higgs ,  Jaegil Lee

发明人： Chanho Park ,  Joseph Yedinak ,  Christopher Kocon ,  Jason Higgs ,  Jaegil Lee

IPC分类号： H01L29/76

CPC分类号： H01L29/0634 ,  H01L29/0696 ,  H01L29/7811 ,  H01L2924/0002 ,  H01L2924/00

摘要： A charge balance semiconductor power device comprises an active area having strips of p pillars and strips of n pillars arranged in an alternating manner, the strips of p and n pillars extending along a length of the active area. A non-active perimeter region surrounds the active area, and includes at least one p ring surrounding the active area. One end of at last one of the strips of p pillars extending immediately adjacent an edge of the active area terminates at a substantially straight line at which one end of each of the remainder of the strips of p pillars also end. The straight line extends perpendicular to the length of the active area along which the strips of n and p pillars extend.

摘要翻译： 电荷平衡半导体功率器件包括有源区，其具有p柱的条带和以交替方式布置的n个柱的条带，沿着有源区的长度延伸的p和n柱的条带。 非活动周边区域包围有源区域，并且包括围绕有源区域的至少一个p环。 最后一根直立在有源区域边缘上的p柱条的一端终止于大致直线，其中p柱的每条剩余的条的一端也结束。 直线垂直于有源区域的长度延伸，n和p柱的条带沿着该区域的长度延伸。