公开(公告)号：US08836028B2

公开(公告)日：2014-09-16

申请号：US13095690

申请日：2011-04-27

申请人： Joseph A. Yedinak ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Jaegil Lee ,  Dwayne S. Reichl ,  Harold Heidenreich

发明人： Joseph A. Yedinak ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Jaegil Lee ,  Dwayne S. Reichl ,  Harold Heidenreich

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L29/40

CPC分类号： H01L29/0878 ,  H01L29/045 ,  H01L29/0634 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725

摘要： In a general aspect, a power device can include at least one N-type epitaxial layer disposed on a substrate and a plurality of N-pillars and P-pillars that define alternating P-N-pillars in the at least one N-type epitaxial layer. The power device can also include an active region and a termination region, where the termination region surrounds the active region. The alternating P-N-pillars can be disposed in both the active region and the termination region, where the termination region can include a predetermined number of floating P-pillars.

摘要翻译： 在一般方面，功率器件可以包括设置在衬底上的至少一个N型外延层和在所述至少一个N型外延层中限定交替的P-N柱的多个N柱和P柱。 功率器件还可以包括有源区和端接区，其中终端区围绕有源区。 交替的P-N柱可以设置在有源区域和终止区域中，其中终止区域可以包括预定数量的浮动P柱。

公开(公告)号：US20120273916A1

公开(公告)日：2012-11-01

申请号：US13095652

申请日：2011-04-27

申请人： Joseph A. Yedinak ,  Christopher L. Rexer ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Jaegil Lee ,  Hamza Yilmaz ,  Chongman Yun ,  Dwayne S. Reichl ,  James Pan ,  Rodney S. Ridley, SR. ,  Harold Heidenreich

发明人： Joseph A. Yedinak ,  Christopher L. Rexer ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Jaegil Lee ,  Hamza Yilmaz ,  Chongman Yun ,  Dwayne S. Reichl ,  James Pan ,  Rodney S. Ridley, SR. ,  Harold Heidenreich

IPC分类号： H01L29/872

CPC分类号： H01L29/0634 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/4238 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/74 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872

摘要： A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type.

公开(公告)号：US20120273884A1

公开(公告)日：2012-11-01

申请号：US13095690

申请日：2011-04-27

申请人： Joseph A. Yedinak ,  Christopher L. Rexer ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Jaegil Lee ,  Hamza Yilmaz ,  Chongman Yun ,  Dwayne S. Reichl ,  James Pan ,  Rodney S. Ridley, SR. ,  Harold Heidenreich

发明人： Joseph A. Yedinak ,  Christopher L. Rexer ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Jaegil Lee ,  Hamza Yilmaz ,  Chongman Yun ,  Dwayne S. Reichl ,  James Pan ,  Rodney S. Ridley, SR. ,  Harold Heidenreich

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0878 ,  H01L29/045 ,  H01L29/0634 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725

摘要： A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type.

摘要翻译： 功率器件包括半导体区域，该半导体区域又包括多个交替布置的第一和第二导电类型的柱。 第二导电类型的多个柱中的每一个还包括沿着第二导电类型的柱的深度彼此顶部布置的多个第二导电类型的注入区，以及填充有第二导电类型的半导体材料的沟槽部 在第二导电类型的多个植入区域的正上方。

公开(公告)号：US08928077B2

公开(公告)日：2015-01-06

申请号：US12234549

申请日：2008-09-19

申请人： JaeGil Lee ,  Chongman Yun ,  Hocheol Jang ,  Christopher L. Rexer ,  Praveen Muraleedharan Shenoy ,  Dwayne S. Reichl ,  Joseph A. Yedinak

发明人： JaeGil Lee ,  Chongman Yun ,  Hocheol Jang ,  Christopher L. Rexer ,  Praveen Muraleedharan Shenoy ,  Dwayne S. Reichl ,  Joseph A. Yedinak

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/40

CPC分类号： H01L29/66712 ,  H01L21/02532 ,  H01L21/26513 ,  H01L21/30604 ,  H01L29/0615 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1075 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： In one general aspect, a power device includes an active region having a plurality of pillars of a first conductivity type alternately arranged with a plurality of pillars of a second conductivity type where the plurality of pillars of the second conductivity type in the active region each have substantially the same width. The power device includes a termination region surrounding at least a portion of the active region and having a plurality of pillars of the first conductivity type alternately arranged with a plurality of pillars of the second conductivity type where the plurality of pillars of the second conductivity type in the active region each have substantially the same width and are smaller than each width of the pillars of the second conductivity type in the termination region. The power device includes a transition region disposed between the active region and the termination region.

摘要翻译： 在一个一般方面，功率器件包括具有多个第一导电类型的柱的有源区，该多个柱交替地布置有多个第二导电类型的柱，其中有源区中的第二导电类型的多个柱各自具有 基本相同的宽度。 功率器件包括围绕有源区域的至少一部分的端接区域，并且具有多个第一导电类型的柱，其交替地布置有多个第二导电类型的支柱，其中第二导电类型的多个支柱 有源区域各自具有基本上相同的宽度，并且小于端接区域中的第二导电类型的柱的每个宽度。 功率器件包括设置在有源区和端接区之间的过渡区。

公开(公告)号：US08772868B2

公开(公告)日：2014-07-08

申请号：US13095670

申请日：2011-04-27

申请人： Joseph A. Yedinak ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Hamza Yilmaz ,  James Pan ,  Rodney S. Ridley, Sr.

发明人： Joseph A. Yedinak ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Hamza Yilmaz ,  James Pan ,  Rodney S. Ridley, Sr.

IPC分类号： H01L29/66

CPC分类号： H01L29/7813 ,  H01L21/0243 ,  H01L21/02579 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/8611 ,  H01L29/872

摘要： A power device includes a semiconductor substrate having a plurality of alternately arranged pillars of first and second conductivity types. At least one of the plurality of pillars of second conductivity type includes a first trench epitaxial layer of the second conductivity type disposed on a trench sidewall of the second trench and a trench bottom surface of the second trench, a second trench epitaxial layer of the second conductivity type disposed on the first trench epitaxial layer of the second conductivity type, and an insulating material layer disposed on the second trench epitaxial layer of the second conductivity type.

摘要翻译： 功率器件包括具有多个交替布置的第一和第二导电类型的柱的半导体衬底。 第二导电类型的多个支柱中的至少一个包括设置在第二沟槽的沟槽侧壁上的第二导电类型的第一沟槽外延层和第二沟槽的沟槽底表面，第二沟槽外延层的第二沟槽外延层 设置在第二导电类型的第一沟槽外延层上的导电类型，以及设置在第二导电类型的第二沟槽外延层上的绝缘材料层。

公开(公告)号：US06831329B2

公开(公告)日：2004-12-14

申请号：US10278224

申请日：2002-10-22

申请人： Joseph A. Yedinak ,  Jon Gladish ,  Sampat Shekhawat ,  Gary M. Dolny ,  Praveen Muraleedharan Shenoy ,  Douglas Joseph Lange ,  Mark L. Rinehimer

发明人： Joseph A. Yedinak ,  Jon Gladish ,  Sampat Shekhawat ,  Gary M. Dolny ,  Praveen Muraleedharan Shenoy ,  Douglas Joseph Lange ,  Mark L. Rinehimer

IPC分类号： H01L21336

CPC分类号： H01L29/4232 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/7395

摘要： A quick punch-through integrated gate bipolar transistor (IGBT) includes a drift region and a gate. The drift region has a drift region dopant concentration and a drift region thickness. The gate has a gate capacitance. The drift region dopant concentration, drift region thickness and gate capacitance are adjusted dependent at least in part upon the PNP gain of the IGBT to maintain the potential difference between the gate and emitter at a level greater than the IGBT threshold voltage when the collector voltage reaches the bus voltage. This insures that the hole carrier concentration remains approximately equal to or greater than the drift region dopant concentration when the depletion layer punches through to the buffer region during the turn-off delay. Thus, the collector voltage overshoot and the rate of change of voltage and current are controlled, and electromagnetic interference is reduced, during turn off.

摘要翻译： 快速穿透式集成栅双极晶体管（IGBT）包括漂移区和栅极。 漂移区具有漂移区掺杂浓度和漂移区厚度。 栅极具有栅极电容。 调整漂移区掺杂浓度，漂移区厚度和栅极电容至少部分依赖于IGBT的PNP增益，以在集电极电压达到时将栅极和发射极之间的电位差维持在大于IGBT阈值电压的电平 总线电压。 这确保当在关断延迟期间耗尽层冲击到缓冲区域时，空穴载流子浓度保持近似等于或大于漂移区掺杂剂浓度。 因此，控制集电极电压过冲和电压和电流的变化率，并且在关断期间电磁干扰降低。

公开(公告)号：US08673700B2

公开(公告)日：2014-03-18

申请号：US13095678

申请日：2011-04-27

申请人： Joseph A. Yedinak ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy

发明人： Joseph A. Yedinak ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/7813 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42372 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/872

摘要： A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type.

公开(公告)号：US20120273875A1

公开(公告)日：2012-11-01

申请号：US13095670

申请日：2011-04-27

申请人： Joseph A. Yedinak ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Hamza Yilmaz ,  James Pan ,  Rodney S. Ridley

发明人： Joseph A. Yedinak ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy ,  Hamza Yilmaz ,  James Pan ,  Rodney S. Ridley

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L21/0243 ,  H01L21/02579 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/8611 ,  H01L29/872

摘要： A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type.

公开(公告)号：US20120276701A1

公开(公告)日：2012-11-01

申请号：US13095678

申请日：2011-04-27

申请人： Joseph A. Yedinak ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy

发明人： Joseph A. Yedinak ,  Mark L. Rinehimer ,  Praveen Muraleedharan Shenoy

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42372 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/872

摘要： A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type.

公开(公告)号：US07586156B2

公开(公告)日：2009-09-08

申请号：US11828283

申请日：2007-07-25

申请人： Joseph A. Yedinak ,  Richard L. Woodin ,  Christopher Lawrence Rexer ,  Praveen Muraleedharan Shenoy ,  Kwanghoon Oh ,  Chongman Yun

发明人： Joseph A. Yedinak ,  Richard L. Woodin ,  Christopher Lawrence Rexer ,  Praveen Muraleedharan Shenoy ,  Kwanghoon Oh ,  Chongman Yun

IPC分类号： H01L27/02

CPC分类号： H01L29/872 ,  H01L27/0248 ,  H01L29/1608 ,  H01L29/8618 ,  H01L29/87

摘要： A wide bandgap device in parallel with a device having a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device.

摘要翻译： 宽带隙器件与具有比宽带隙器件更低的雪崩击穿电压和更高的正向压降的器件并联。