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12 条记录 (耗时 0.032 秒)

    Barrier seal for electrostatic chuck
    1.
    发明授权
    Barrier seal for electrostatic chuck 失效
    静电卡盘阻隔密封

    公开(公告)号：US5636098A

    公开(公告)日：1997-06-03

    申请号：US439010

    申请日：1995-05-11

    申请人： Joseph Salfelder ,  Dennis Grimard ,  John F. Cameron ,  Chandra Deshpandey ,  Robert Ryan ,  Michael G. Chafin

    发明人： Joseph Salfelder ,  Dennis Grimard ,  John F. Cameron ,  Chandra Deshpandey ,  Robert Ryan ,  Michael G. Chafin

    IPC分类号： H02N13/00 ,  H01L21/683

    CPC分类号： H01L21/6833 ,  H01L21/6831

    摘要： An erosion resistant electrostatic chuck 20 for holding a substrate 45 having a peripheral edge 50, in an erosive environment, comprises an electrostatic member 25 including (i) an electrode 30, and (ii) an insulator 35 covering the electrode. A barrier 55 is circumferentially disposed about the electrostatic member 25. The barrier 55 comprises a first contact surface 60 capable of being pressed against the peripheral edge 50 of the substrate 45 to form a seal around the substrate 45 to reduce exposure of the electrostatic member 25 of the chuck 20 to the erosive environment.

    摘要翻译： 用于在侵蚀环境中保持具有周边边缘50的基板45的防腐蚀静电卡盘20包括静电部件25，静电部件25包括（i）电极30和（ii）覆盖电极的绝缘体35。 阻挡件55围绕静电部件25周向设置。阻挡件55包括第一接触表面60，该第一接触表面60能够抵靠基板45的周边边缘50，以围绕基板45形成密封，以减少静电部件25的暴露 的卡盘20到腐蚀环境。

    Electrostatic chuck for magnetic flux processing
    4.
    发明授权
    Electrostatic chuck for magnetic flux processing 失效
    静磁卡盘用于磁通加工

    公开(公告)号：US5592358A

    公开(公告)日：1997-01-07

    申请号：US276841

    申请日：1994-07-18

    申请人： Shamouil Shamouilian ,  John F. Cameron ,  Chandra Deshpandey ,  Yuh-Jia Su

    发明人： Shamouil Shamouilian ,  John F. Cameron ,  Chandra Deshpandey ,  Yuh-Jia Su

    IPC分类号： H02N13/00 ,  H01L21/683

    CPC分类号： H01L21/6831 ,  H01L21/6833 ,  Y10T29/49117

    摘要： An electrostatic chuck 20 for holding substrates 42 in a process chamber 40 containing a magnetic flux 43 comprises a base 22 having an upper surface adapted to support a substrate 42 thereon. An insulator 26 with an electrode 24 therein, is on the base 22. A magnetic shunt 34 comprising a ferromagnetic material is positioned (i) either on the base 22, or (ii) in the insulator 26, or (iii) directly below, and contiguous to, the base 22.

    摘要翻译： 用于将基板42保持在包含磁通43的处理室40中的静电卡盘20包括具有适于在其上支撑基板42的上表面的基座22。 其中具有电极24的绝缘体26位于基座22上。包括铁磁材料的磁分路器34（i）位于基座22上，或（ii）在绝缘体26中，或（iii）直接在下方， 并且与基座22相邻。

    Electrostatic chuck with improved erosion resistance
    5.
    发明授权
    Electrostatic chuck with improved erosion resistance 失效
    具有改善耐腐蚀性能的静电吸盘

    公开(公告)号：US6023405A

    公开(公告)日：2000-02-08

    申请号：US24917

    申请日：1998-02-17

    申请人： Shamouil Shamouilian ,  Manoocher Birang ,  John F. Cameron ,  Chandra Deshpandey ,  Alfred Goldspeil ,  Ron Northrup ,  Semyon Shertinsky ,  Sasson Somekh

    发明人： Shamouil Shamouilian ,  Manoocher Birang ,  John F. Cameron ,  Chandra Deshpandey ,  Alfred Goldspeil ,  Ron Northrup ,  Semyon Shertinsky ,  Sasson Somekh

    IPC分类号： B25J15/06 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00

    CPC分类号： C23C16/45521 ,  C23C16/4586 ,  H01L21/67103 ,  H01L21/6831 ,  H01L21/6833 ,  H02N13/00 ,  Y10T279/23 ,  Y10T29/49117

    摘要： An electrostatic chuck (20) for holding a substrate (45) is described. One version of the chuck (20) suitable for mounting on a base (25), comprises (i) an electrostatic member (33) having an electrode (50) therein, and (ii) an electrical lead (60) extending through the base (25) to electrically engage the electrode (50) of the electrostatic member (33). When the chuck (20) is used to hold a substrate (45) in a process chamber (80) containing erosive process gas, the substrate (45) covers and substantially protects the electrical lead (60) from erosion by the erosive process gas. In a preferred version of the chuck (20), an electrical connector (55) forming an integral extension of the electrode (50), electrically connects the electrode (50) to a voltage supply terminal (70) used to operate the chuck (20). The electrical connector (55) comprises (i) an electrical lead (60) that extends through the base (25), and (ii) an electrical contact (65) on the electrical lead (60), the contact sized sufficiently large to directly contact and electrically engage the voltage supply terminal (70). The electrode (50) of the chuck (20) can comprise first and second electrodes (130), (135) electrically isolated from one another by an electrical isolation void (52), the electrodes sized and configured so that the electrical isolation void (52) can serve as a cooling groove (105) for holding coolant for cooling the substrate (45) held on the chuck (20). Preferably, the two electrode chuck (20) is used in conjunction with a switching system capable of operating the chuck (20) in either a monopolar mode or in a bipolar mode.

    摘要翻译： 描述了用于保持基板（45）的静电卡盘（20）。 适于安装在基座（25）上的卡盘（20）的一个版本包括（i）其中具有电极（50）的静电部件（33）和（ii）延伸穿过底座 （25）电连接静电部件（33）的电极（50）。 当卡盘（20）用于将基板（45）保持在包含腐蚀性处理气体的处理室（80）中时，基板（45）覆盖并基本上保护电引线（60）免受侵蚀性处理气体的侵蚀。 在卡盘（20）的优选形式中，形成电极（50）的整体延伸的电连接器（55）将电极（50）电连接到用于操作卡盘（20）的电压供应端子 ）。 电连接器（55）包括（i）延伸穿过基座（25）的电引线（60）和（ii）电引线（60）上的电触头（65），触头尺寸足够大以直接 接触和电接合电压端子（70）。 卡盘（20）的电极（50）可以包括通过电隔离空隙（52）彼此电隔离的第一和第二电极（130），电极的尺寸和构造使得电隔离空隙（ 52）可以用作用于保持冷却剂的冷却槽（105），以冷却保持在卡盘（20）上的基板（45）。 优选地，两个电极卡盘（20）与能够以单极模式或双极模式操作卡盘（20）的开关系统结合使用。

    Erosion resistant electrostatic chuck with improved cooling system
    7.
    发明授权
    Erosion resistant electrostatic chuck with improved cooling system 失效
    耐腐蚀静电吸盘具有改进的冷却系统

    公开(公告)号：US5631803A

    公开(公告)日：1997-05-20

    申请号：US369237

    申请日：1995-01-06

    申请人： John F. Cameron ,  Joseph F. Salfelder ,  Chandra Deshpandey

    发明人： John F. Cameron ,  Joseph F. Salfelder ,  Chandra Deshpandey

    IPC分类号： B23Q3/15 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/683 ,  H02N13/00

    CPC分类号： H01L21/02071 ,  H01L21/31138 ,  H01L21/6831

    摘要： An electrostatic chuck (20) for holding a substrate (40) in a process chamber (50) comprises a base (25) supporting a resilient insulator (30). The insulator (30) comprises (i) an electrode (35) embedded therein; (ii) a top surface (34) with a peripheral edge (32); and (iii) cooling grooves (45) for holding coolant in the top surface (34), the tips (125) of the cooling grooves (45) and the peripheral edge (32) of the insulator (30) defining an edge gap (130) having a width w. The width w of the edge gap (130) is sized sufficiently small that the coolant in the grooves (45) cools the perimeter (120) of the substrate (40) held on the chuck (20). The insulator (30) is sufficiently thick that when a substrate (40) is electrostatically held on the chuck (20) and coolant is held in the cooling grooves (45), the insulator (30) in the edge gap (130) resiliently conforms to the substrate (40) so that substantially no coolant leaks out from the tips (125) of the cooling grooves (45). Preferably, the coolant grooves (45) do not cut into the electrode (35).

    摘要翻译： 用于将基板（40）保持在处理室（50）中的静电卡盘（20）包括支撑弹性绝缘体（30）的基座（25）。 绝缘体（30）包括（i）嵌入其中的电极（35） （ii）具有周边边缘（32）的顶表面（34）; 和（iii）用于在顶表面（34）中保持冷却剂的冷却槽（45），冷却槽（45）的顶端（125）和绝缘体（30）的周边边缘（32）限定边缘间隙 130）具有宽度w。 边缘间隙（130）的宽度w的尺寸足够小，使得凹槽（45）中的冷却剂冷却保持在卡盘（20）上的基底（40）的周边（120）。 绝缘体（30）足够厚，当基板（40）被静电保持在卡盘（20）上并且冷却剂被保持在冷却槽（45）中时，边缘间隙（130）中的绝缘体（30）弹性地符合 到基板（40），使得基本上没有冷却剂从冷却槽（45）的末端（125）泄漏出来。 优选地，冷却剂槽（45）不切入电极（35）。

    Electrically insulating sealing structure and its method of use in a high vacuum physical vapor deposition apparatus
    8.
    发明授权
    Electrically insulating sealing structure and its method of use in a high vacuum physical vapor deposition apparatus 失效
    电绝缘密封结构及其在高真空物理气相沉积设备中的应用方法

    公开(公告)号：US6033483A

    公开(公告)日：2000-03-07

    申请号：US899685

    申请日：1997-07-24

    申请人： Richard Ernest Demaray ,  Manuel J. Herrera ,  David F. Eline ,  Chandra Deshpandey

    发明人： Richard Ernest Demaray ,  Manuel J. Herrera ,  David F. Eline ,  Chandra Deshpandey

    IPC分类号： C23C14/34 ,  C23C14/56 ,  H01J37/32 ,  C23C16/00

    CPC分类号： H01J37/32458 ,  C23C14/3407 ,  C23C14/564 ,  H01J37/34 ,  H01J2237/166 ,  Y10T428/24355 ,  Y10T428/31511 ,  Y10T428/31515 ,  Y10T428/31522

    摘要： In accordance with the present invention, an insulating sealing structure useful in physical vapor deposition apparatus is provided. The insulating sealing structure is capable of functioning under high vacuum and high temperature conditions. The apparatus is a three dimensional structure having a specifically defined range of electrical, chemical, mechanical and thermal properties enabling the structure to function adequately as an insulator which does not break down at voltages ranging between about 1,500 V and about 3,000 V, which provides a seal against a vacuum of at least about 10.sup.-6 Torr, and which can function at a continuous operating temperature of about 300.degree. F. (148.9.degree. C.) or greater. The insulating sealing structure may be fabricated solely from particular polymeric materials or may comprise a center reinforcing member having at least one layer applied to its exterior surface, where the at least one surface layer provides at least a portion of the insulating properties and provides the surface finish necessary to make an adequate seal with a mating surface. A first preferred embodiment comprises an aluminum center reinforcing member having at least one layer of a polymeric insulator applied to provide an insulating, sealing surface. A second preferred embodiment comprises an anodized aluminum center reinforcing member having an inorganic insulator such as silicon oxide, silicon nitride, or aluminum nitride applied to provide the insulating, sealing surface. A third preferred embodiment comprises a graphite, silica or glass fiber-reinforced member having at least one layer of a polymeric insulator applied thereover, to provide an insulating sealing surface. A fourth preferred embodiment comprises a silicon nitride or graphic fiber-reinforced member having an inorganic, non-metallic insulating sealing surface thereover.

    摘要翻译： 根据本发明，提供了一种用于物理气相沉积设备的绝缘密封结构。 绝缘密封结构能够在高真空和高温条件下起作用。 该装置是具有特定范围的电气，化学，机械和热特性的三维结构，使得结构能够充分发挥作用，其绝缘体不会在约1500V至约3000V之间的电压下分解，这提供 密封至少约10 -6乇的真空，并可在约300°F（148.9℃）或更高的连续工作温度下起作用。 绝缘密封结构可以仅由特定聚合物材料制造，或者可以包括具有施加到其外表面的至少一层的中心加强构件，其中至少一个表面层提供绝缘性能的至少一部分并提供表面 完成必要的配合表面的充分密封。 第一优选实施例包括铝中心加强构件，其具有至少一层用于提供绝缘的密封表面的聚合物绝缘体层。 第二优选实施例包括阳极氧化铝中心加强件，其具有诸如氧化硅，氮化硅或氮化铝的无机绝缘体，以提供绝缘的密封表面。 第三优选实施例包括石墨，二氧化硅或玻璃纤维增​​强构件，其具有施加在其上的至少一层聚合物绝缘体，以提供绝缘密封表面。 第四优选实施例包括在其上具有无机，非金属绝缘密封表面的氮化硅或图形纤维增强构件。

    Collimated sputtering of semiconductor and other films
    9.
    发明授权
    Collimated sputtering of semiconductor and other films 失效
    半导体和其他薄膜的准直溅射

    公开(公告)号：US06362097B1

    公开(公告)日：2002-03-26

    申请号：US09115258

    申请日：1998-07-14

    申请人： Richard Ernest Demaray ,  Chandra Deshpandey ,  Rajiv Gopal Pethe

    发明人： Richard Ernest Demaray ,  Chandra Deshpandey ,  Rajiv Gopal Pethe

    IPC分类号： H01L2144

    CPC分类号： C23C14/34 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/28008 ,  H01L29/66765

    摘要： Thin semiconductor films or layers having a pre-selected degree of crystallinity, from amorphous material to poly-crystalline material, can be obtained by selecting an appropriate aspect ratio for a collimator used during a sputtering process. The orientation of the deposited film also can be tailored by selection of the collimator aspect ratio. Sputtered collimation permits highly crystalline films to be formed at temperatures significantly below the annealing temperature of the sputtered material. Thus, required fabrication steps and increase the throughput of the use of low temperatures allows films of substantially greater crystallinity and carrier mobility to be fabricated on glass and other low temperature substrates. Additionally, thin semiconductor Trapped charge defects also can be reduced by grounding the collimator to provide electrical isolation between the charged plasma particles and the substrate on which the sputtered layer is to be formed. Dielectric films having a thickness as small as several hundred Å can be formed to fabricate high transconductance devices with high breakdown strengths. improved electrically active interfaces, such as a rectifying junction between a semiconductor layer and a dielectric layer or an ohmic junction between intrinsic and doped semiconductor materials.

    摘要翻译： 通过选择溅射工艺中使用的准直器的合适的纵横比，可以获得从非晶材料到多晶材料具有预先选择的结晶度的薄的半导体膜或层。 沉积膜的取向也可以通过选择准直器纵横比进行调整。 溅射准直允许在显着低于溅射材料的退火温度的温度下形成高度结晶的膜。 因此，所需的制造步骤和增加使用低温的生产能力允许在玻璃和其它低温基底上制造具有更大结晶度和载流子迁移率的膜。 此外，还可以通过使准直器接地来提供薄的半导体俘获电荷缺陷，从而在被充电的等离子体粒子和其上将形成溅射层的衬底之间提供电隔离。 可以形成具有小至几百埃的厚度的介电膜，以制造具有高击穿强度的高跨导器件。 改进的电活性界面，例如半导体层和电介质层之间的整流结或本征掺杂半导体材料之间的欧姆结。

    Controlled nano-doping of ultra thin films
    10.
    发明授权
    Controlled nano-doping of ultra thin films 有权
    超薄膜的纳米掺杂控制

    公开(公告)号：US07544398B1

    公开(公告)日：2009-06-09

    申请号：US11411425

    申请日：2006-04-26

    申请人： Jane P. Chang ,  Trinh Tu Van ,  Tony Chiang ,  Chandra Deshpandey ,  Karl Lesser

    发明人： Jane P. Chang ,  Trinh Tu Van ,  Tony Chiang ,  Chandra Deshpandey ,  Karl Lesser

    IPC分类号： H05H1/24

    CPC分类号： C23C16/40 ,  C23C16/452 ,  C23C16/45531

    摘要： The invention relates to methods for producing doped thin layers on substrates comprising the steps of depositing a dopant precursor on the substrate via an atomic layer deposition technique; and exposing the deposited dopant precursor to radicals. The methods can further comprise depositing a compound adjacent the dopant metal via an atomic layer deposition technique; and exposing the deposited compound to radicals, thereby providing a host. The invention relates to articles comprising approximately atomically thin layers of metals or metal oxides doped with at least one different metal or metal oxide. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

    摘要翻译： 本发明涉及用于在衬底上产生掺杂薄层的方法，包括以下步骤：通过原子层沉积技术在衬底上沉积掺杂剂前体; 并将沉积的掺杂剂前体暴露于自由基。 所述方法还可以包括通过原子层沉积技术沉积邻近掺杂剂金属的化合物; 并将沉积的化合物暴露于自由基，从而提供主体。 本发明涉及包含掺杂有至少一种不同金属或金属氧化物的近似原子层薄的金属或金属氧化物的制品。 该摘要旨在作为用于在特定技术中进行搜索的扫描工具，而不意在限制本发明。