Multiple pintle nozzle propulsion control system
    1.
    发明授权
    Multiple pintle nozzle propulsion control system 失效
    多重枢轴喷嘴推进控制系统

    公开(公告)号:US5456425A

    公开(公告)日:1995-10-10

    申请号:US147591

    申请日:1993-11-04

    摘要: A rocket motor assembly is provided with multiple pintle nozzles and a controller for adjusting the pintle position in the nozzles to generate a thrust differential, while maintaining the combustion pressure at equilibrium pressure by maintaining the sum of the throat areas of all of the pintle nozzles constant, for example. In this manner, proportional thrust control and very high response times are achieved. The controller also includes a pressure correction circuit that senses any difference between the actual combustion chamber pressure and the selected equilibrium pressure upon which the thrust differential was based, converts that to an error value, and sends a command signal to each pintle actuator so that each pintle position is adjusted an equal amount to compensate for the sensed pressure difference and maintain the combustion chamber pressure at the selected equilibrium pressure.

    摘要翻译: 火箭发动机组件设置有多个枢轴喷嘴和控制器,用于调节喷嘴中的枢轴位置以产生推力差,同时通过保持所有枢轴喷嘴的喉部面积的总和恒定,将燃烧压力保持在平衡压力 , 例如。 以这种方式,实现了比例推力控制和非常高的响应时间。 该控制器还包括压力校正电路,该电压检测实际燃烧室压力与推力差异所基于的所选择的平衡压力之间的任何差异,将其转换为误差值,并将命令信号发送到每个枢轴致动器,使得每个 枢转位置被调整为相等的量以补偿感测到的压差,并将燃烧室压力保持在选定的平衡压力。

    Method of forming a carbon doped oxide layer on a substrate
    4.
    发明授权
    Method of forming a carbon doped oxide layer on a substrate 失效
    在基板上形成碳掺杂氧化物层的方法

    公开(公告)号:US06482754B1

    公开(公告)日:2002-11-19

    申请号:US09867869

    申请日:2001-05-29

    IPC分类号: H01L2131

    摘要: A method of forming a carbon doped oxide layer on a substrate is described. That method comprises introducing into a chemical vapor deposition apparatus a precursor gas that is selected from those having the formula (CH3)xSi(OCH3)4−x. Simultaneously, a background gas, oxygen and nitrogen are introduced into the chemical vapor deposition apparatus. That apparatus is then operated under conditions that cause a carbon doped oxide layer to form on the substrate.

    摘要翻译: 描述了在基板上形成碳掺杂氧化物层的方法。 该方法包括向化学气相沉积设备中引入选自具有式(CH 3)x Si(OCH 3)4-x的前体气体)的前体气体。 同时,将背景气体,氧气和氮气引入化学气相沉积设备中。 该装置然后在导致在衬底上形成碳掺杂氧化物层的条件下操作。

    Carbon doped oxide deposition
    5.
    发明授权
    Carbon doped oxide deposition 有权
    碳掺杂氧化物沉积

    公开(公告)号:US06677253B2

    公开(公告)日:2004-01-13

    申请号:US09972228

    申请日:2001-10-05

    IPC分类号: H01L2131

    摘要: A method for carbon doped oxide (CDO) deposition is described. One method of deposition includes providing a substrate and introducing oxygen to a carbon doped oxide precursor in the presence of the substrate. A carbon doped oxide film is formed on the substrate. In another method the substrate is placed on a susceptor of a chemical vapor deposition apparatus. A background gas is introduced along with the carbon doped oxide precursor and oxygen to form the carbon doped oxide film on the substrate.

    摘要翻译: 描述了碳掺杂氧化物(CDO)沉积的方法。 沉积的一种方法包括提供衬底并在衬底的存在下将氧引入掺碳的氧化物前体。 在基板上形成碳掺杂氧化物膜。 在另一种方法中,将基板放置在化学气相沉积设备的基座上。 背景气体与碳掺杂的氧化物前体和氧一起引入,以在衬底上形成碳掺杂的氧化物膜。