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1.发明申请公开(公告)号：US20130092549A1
公开(公告)日：2013-04-18
申请号：US13437812
申请日：2012-04-02
IPC分类号： H01L31/058 , C25B1/00 , C25B3/04 , C25B13/00
CPC分类号： C25B3/04 , B01J23/42 , B01J23/468 , C25B1/003 , C25B1/10 , C25B9/08 , C25B13/00 , Y02E60/368
摘要： A light-driven electrolytic cell that uses water vapor as the feedstock and that has no wires or connections whatsoever to an external electrical power source of any kind. In one embodiment, the electrolytic cell uses a proton exchange membrane (PEM) with an IrRuOx water oxidation catalyst and a Pt black water reduction catalyst to consume water vapor and generate molecular oxygen and a chemical fuel, molecular hydrogen. The operation of the electrolytic cell using water vapor supplied by a humidified carrier gas has been demonstrated under varying conditions of the gas flow rate, the relative humidity, and the presence or absence of oxygen. The performance of the system with water vapor was also compared to the performance when the device was immersed in liquid water.
摘要翻译： 一种光驱电解池，其使用水蒸汽作为原料，并且不会对任何类型的外部电源都没有电线或连接。 在一个实施方案中，电解池使用具有IrRuOx水氧化催化剂和Pt黑水还原催化剂的质子交换膜（PEM）来消耗水蒸汽并产生分子氧和化学燃料，分子氢。 已经在气体流速，相对湿度和氧气的存在或不存在的条件下，证明了使用由加湿载气供应的水蒸汽的电解池的操作。 还将水蒸气系统的性能与器件浸入液态水中的性能进行比较。
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公开(公告)号：US20120138456A1
公开(公告)日：2012-06-07
申请号：US13312567
申请日：2011-12-06
摘要： The solar fuels generator includes photoanodes that each extends outward from a first side of a membrane. The generator also includes photocathodes that each extends outward from a second side of the membrane. The photocathodes each includes a p-type semiconductor and the photoanodes each includes an n-type semiconductor. The p-type semiconductors are in electrical communication with the n-type semiconductors.
摘要翻译： 太阳能燃料发生器包括各自从膜的第一侧向外延伸的光电阳极。 发电机还包括各自从膜的第二侧向外延伸的光电阴极。 光电二极管各自包括p型半导体，光电二极管均包括n型半导体。 p型半导体与n型半导体电连通。
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公开(公告)号：US08110898B2
公开(公告)日：2012-02-07
申请号：US12176065
申请日：2008-07-18
IPC分类号： H01L29/06
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02381 , H01L21/0256 , H01L21/02562 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/16 , H01L29/20 , H01L29/22 , Y10S438/962
摘要： A structure consisting of well-ordered semiconductor structures embedded in a binder material which maintains the ordering and orientation of the semiconductor structures. Methods for forming such a structure include forming the semiconductor structures on a substrate, casting a binder material onto the substrate to embed the semiconductor structures in the binder material, and separating the binder material from the substrate at the substrate. These methods provide for the retention of the orientation and order of highly ordered semiconductor structures in the separated binder material.
摘要翻译： 由嵌入在粘合剂材料中的有序半导体结构组成的结构，其维持半导体结构的排序和取向。 用于形成这种结构的方法包括在基底上形成半导体结构，将粘合剂材料浇铸到基底上以将半导体结构嵌入粘合剂材料中，并在基片上将粘合剂材料与基底分离。 这些方法提供了在分离的粘合剂材料中保持高度有序的半导体结构的取向和顺序。
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公开(公告)号：US20110126892A1
公开(公告)日：2011-06-02
申请号：US12956422
申请日：2010-11-30
申请人： Morgan C. PUTNAM , Michael D. Kelzenberg , Harry A. Atwater , Shannon W. Boettcher , Nathan S. Lewis , Joshua M. Spurgeon , Daniel B. Turner-Evans , Emily L. Warren
发明人： Morgan C. PUTNAM , Michael D. Kelzenberg , Harry A. Atwater , Shannon W. Boettcher , Nathan S. Lewis , Joshua M. Spurgeon , Daniel B. Turner-Evans , Emily L. Warren
IPC分类号： H01L31/0352 , H01L31/18 , B82Y99/00 , B82Y40/00
CPC分类号： H01L31/035281 , H01L31/022425 , H01L31/0547 , H01L31/056 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Three-dimensional patterning methods of a three-dimensional microstructure, such as a semiconductor wire array, are described, in conjunction with etching and/or deposition steps to pattern the three-dimensional microstructure.
摘要翻译： 结合用于对三维微结构进行图案化的蚀刻和/或沉积步骤，描述了诸如半导体线阵列的三维微结构的三维图案化方法。
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5.发明授权公开(公告)号：US07910461B2
公开(公告)日：2011-03-22
申请号：US12176100
申请日：2008-07-18
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02381 , H01L21/0256 , H01L21/02562 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/16 , H01L29/20 , H01L29/22 , Y10S438/962
摘要： Reusing a Si wafer for the formation of wire arrays by transferring the wire arrays to a polymer matrix, reusing a patterned oxide for several array growths, and finally polishing and reoxidizing the wafer surface and reapplying the patterned oxide.
摘要翻译： 通过将线阵列转移到聚合物基质上来重新使用Si晶片来形成线阵列，重新使用用于几个阵列生长的图案化氧化物，最后抛光和再氧化晶片表面并重新施加图案化氧化物。
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6.发明申请公开(公告)号：US20090061600A1
公开(公告)日：2009-03-05
申请号：US12176100
申请日：2008-07-18
IPC分类号： H01L21/20
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02381 , H01L21/0256 , H01L21/02562 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/16 , H01L29/20 , H01L29/22 , Y10S438/962
摘要： Reusing a Si wafer for the formation of wire arrays by transferring the wire arrays to a polymer matrix, reusing a patterned oxide for several array growths, and finally polishing and reoxidizing the wafer surface and reapplying the patterned oxide.
摘要翻译： 通过将线阵列转移到聚合物基质上来重新使用Si晶片来形成线阵列，重新使用用于几个阵列生长的图案化氧化物，最后抛光和再氧化晶片表面并重新施加图案化氧化物。
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公开(公告)号：US09530912B2
公开(公告)日：2016-12-27
申请号：US12956422
申请日：2010-11-30
申请人： Morgan C. Putnam , Michael D. Kelzenberg , Harry A. Atwater , Shannon W. Boettcher , Nathan S. Lewis , Joshua M. Spurgeon , Daniel B. Turner-Evans , Emily L. Warren
发明人： Morgan C. Putnam , Michael D. Kelzenberg , Harry A. Atwater , Shannon W. Boettcher , Nathan S. Lewis , Joshua M. Spurgeon , Daniel B. Turner-Evans , Emily L. Warren
IPC分类号： H01L31/0232 , H01L31/0236 , H01L31/052 , H01L31/0224 , H01L31/068 , H01L31/0352 , H01L31/18 , H01L31/056 , H01L31/054
CPC分类号： H01L31/035281 , H01L31/022425 , H01L31/0547 , H01L31/056 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Three-dimensional patterning methods of a three-dimensional microstructure, such as a semiconductor wire array, are described, in conjunction with etching and/or deposition steps to pattern the three-dimensional microstructure.
摘要翻译： 结合用于对三维微结构进行图案化的蚀刻和/或沉积步骤，描述了诸如半导体线阵列的三维微结构的三维图案化方法。
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8.发明申请公开(公告)号：US20120282761A1
公开(公告)日：2012-11-08
申请号：US13550395
申请日：2012-07-16
IPC分类号： H01L21/20
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02381 , H01L21/0256 , H01L21/02562 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/16 , H01L29/20 , H01L29/22 , Y10S438/962
摘要： Reusing a Si wafer for the formation of wire arrays by transferring the wire arrays to a polymer matrix, reusing a patterned oxide for several array growths, and finally polishing and reoxidizing the wafer surface and reapplying the patterned oxide.
摘要翻译： 通过将线阵列转移到聚合物基质上来重新使用Si晶片来形成线阵列，重新使用用于几个阵列生长的图案化氧化物，最后抛光和再氧化晶片表面并重新施加图案化氧化物。
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9.发明授权公开(公告)号：US08455333B2
公开(公告)日：2013-06-04
申请号：US13550395
申请日：2012-07-16
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02381 , H01L21/0256 , H01L21/02562 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/16 , H01L29/20 , H01L29/22 , Y10S438/962
摘要： Reusing a Si wafer for the formation of wire arrays by transferring the wire arrays to a polymer matrix, reusing a patterned oxide for several array growths, and finally polishing and reoxidizing the wafer surface and reapplying the patterned oxide.
摘要翻译： 通过将线阵列转移到聚合物基质上来重新使用Si晶片来形成线阵列，重新使用用于几个阵列生长的图案化氧化物，最后抛光和再氧化晶片表面并重新施加图案化氧化物。
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10.发明授权公开(公告)号：US08222123B2
公开(公告)日：2012-07-17
申请号：US13053090
申请日：2011-03-21
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02381 , H01L21/0256 , H01L21/02562 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/16 , H01L29/20 , H01L29/22 , Y10S438/962
摘要： Reusing a Si wafer for the formation of wire arrays by transferring the wire arrays to a polymer matrix, reusing a patterned oxide for several array growths, and finally polishing and reoxidizing the wafer surface and reapplying the patterned oxide.
摘要翻译： 通过将线阵列转移到聚合物基质上来重新使用Si晶片来形成线阵列，重新使用用于几个阵列生长的图案化氧化物，最后抛光和再氧化晶片表面并重新施加图案化氧化物。
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