公开(公告)号：US5236551A

公开(公告)日：1993-08-17

申请号：US972665

申请日：1992-11-06

Applicant: Ju-Don T. Pan

Inventor： Ju-Don T. Pan

IPC: H01L21/48 ,  H01L21/768 ,  H01L23/498 ,  H05K3/00 ,  H05K3/06 ,  H05K3/22 ,  H05K3/46

CPC classification number: H05K3/225 ,  H01L21/485 ,  H01L21/76802 ,  H01L21/76894 ,  H01L23/49866 ,  H01L23/49894 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K2201/0195 ,  H05K2203/0769 ,  H05K2203/107 ,  H05K2203/175 ,  H05K3/0017 ,  H05K3/06 ,  H05K3/061 ,  H05K3/4644 ,  Y10S438/94

Abstract: A metal/polymeric dielectric substrate has metal conductors selectively disconnected by photoablating the polymeric dielectric with an excimer laser, etching the exposed metal using the polymeric dielectric as a mask, and coating an additional layer of polymeric dielectric. This eliminates the need for depositing and removing a separate photoablatable mask. Siloxane-modified-polyimide is a preferred photoablatable polymeric material and copper is a preferred metal.

Abstract translation: 金属/聚合物电介质衬底通过用准分子激光器照射聚合物电介质来选择性地断开金属导体，使用聚合物电介质作为掩模蚀刻暴露的金属，以及涂覆另外的聚合物电介质层。 这消除了沉积和移除单独的可光化掩模的需要。 硅氧烷改性聚酰亚胺是优选的可光化聚合材料，铜是优选的金属。

公开(公告)号：US4810332A

公开(公告)日：1989-03-07

申请号：US222486

申请日：1988-07-21

Applicant: Ju-Don T. Pan

Inventor： Ju-Don T. Pan

IPC: H01L21/48 ,  H01L23/498 ,  H05K3/10 ,  H05K3/24 ,  H05K3/38 ,  H05K3/46 ,  C25D5/02

CPC classification number: H01L21/4857 ,  H01L23/49866 ,  H05K3/4647 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K2201/0154 ,  H05K2201/0347 ,  H05K2201/096 ,  H05K2203/0577 ,  H05K2203/0585 ,  H05K2203/0733 ,  H05K3/108 ,  H05K3/243 ,  H05K3/388

Abstract: A method of making an electrical multilayer copper interconnect in which the electrical lines are protected by an electroplated overcoat. A plating interconnect is deposited on a substrate, a sacrificial layer of dielectric material is deposited on the plating interconnect. Thereafter a plating mask is formed on the dielectric material. Two self-aligned plating masks are patterned in one step, one of which is a plating mask for copper plating and the other is a plating mask for the overcoat. Preferably, before electroplating the overcoat, the copper is etched for exposing the sides adjacent the dielectric layer for allowing overcoating all of the copper.

Abstract translation: 一种制造电气多层铜互连的方法，其中电线被电镀的外涂层保护。 电镀互连沉积在衬底上，电介质材料的牺牲层沉积在电镀互连上。 此后，在电介质材料上形成电镀掩模。 两个自对准电镀掩模在一个步骤中被图案化，其中一个是用于镀铜的电镀掩模，另一个是用于外涂层的电镀掩模。 优选地，在电镀外涂层之前，蚀刻铜以暴露邻近介电层的侧面，以允许外涂全部铜。

公开(公告)号：US5071518A

公开(公告)日：1991-12-10

申请号：US426619

申请日：1989-10-24

Applicant: Ju-Don T. Pan

Inventor： Ju-Don T. Pan

IPC: H01L21/48 ,  H01L21/768 ,  H01L23/498 ,  H05K3/10 ,  H05K3/22 ,  H05K3/24 ,  H05K3/38 ,  H05K3/46

CPC classification number: H05K3/4647 ,  H01L21/4846 ,  H01L21/76885 ,  H01L21/76886 ,  H01L23/49866 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K2201/0347 ,  H05K2201/096 ,  H05K2203/072 ,  H05K2203/0733 ,  H05K3/108 ,  H05K3/222 ,  H05K3/243 ,  H05K3/388

Abstract: A method of making an electrical multilayer interconnect in which the electrical lines can be protected by an overcoat. The method includes depositing an electrically conductive layer on a substrate, forming a base plating mask on the electrically conductive layer, plating a copper base into an opening in the base plating mask onto the electrically conductive layer, stripping the base plating mask, forming a pillar plating mask on top of the copper base, plating an electrically conductive metal pillar into an opening in the pillar plating mask onto the top of the copper base, stripping the plating mask, and stripping the electrically conductive layer below the stripped base plating mask. Additionally, a protective overcoat layer can be deposited on the exposed copper surfaces.

Abstract translation: 制造电气多层互连的方法，其中电线可以由外涂层保护。 该方法包括在基板上沉积导电层，在导电层上形成基底电镀掩模，将铜基底镀在基底电镀掩模中的开口中至导电层上，剥离基底掩模，形成柱 电镀掩模在铜基底上，将导电金属柱镀在柱电镀掩模中的开口中至铜底部的顶部，剥离电镀掩模，以及剥离剥离的基底电镀掩模下方的导电层。 此外，保护性外涂层可以沉积在暴露的铜表面上。

公开(公告)号：US5011580A

公开(公告)日：1991-04-30

申请号：US543317

申请日：1990-06-25

Applicant: Ju-Don T. Pan ,  John W. Curry, II ,  Laurence D. Schultz

Inventor： Ju-Don T. Pan ,  John W. Curry, II ,  Laurence D. Schultz

IPC: H01L21/48 ,  H01L21/768 ,  H01L23/498 ,  H05K3/10 ,  H05K3/22 ,  H05K3/24 ,  H05K3/38 ,  H05K3/46

CPC classification number: H01L23/49866 ,  H01L21/4846 ,  H01L21/76886 ,  H05K3/4647 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K2201/0347 ,  H05K2201/096 ,  H05K2203/072 ,  H05K2203/0733 ,  H05K3/108 ,  H05K3/222 ,  H05K3/243 ,  H05K3/388

Abstract: A method of reworking an electrical multilayer interconnect in which the electrical lines can be protected by an overcoat. The method includes removing a defective metallization layer from the top of an interconnect substrate, depositing an electrically conductive layer on the substrate, forming a base plating mask on the electrically conductive layer, plating a copper base into an opening in the base plating mask onto the electrically conductive layer, stripping the base plating mask, forming a pillar plating mask on top of the copper base, plating an electrically conductive metal pillar into an opening in the pillar plating mask onto the top of the copper base, stripping the plating mask, and stripping the electrically conductive layer below the stripped base plating mask. Additionally, a protective overcoat layer can be deposited on the exposed copper surfaces.

Abstract translation: 电工多层互连的再加工方法，其中电线可以由外涂层保护。 该方法包括从互连衬底的顶部去除有缺陷的金属化层，在衬底上沉积导电层，在导电层上形成基底电镀掩模，将铜基底镀在基底电镀掩模中的开口上， 导电层，剥离基底电镀掩模，在铜基底上形成支柱电镀掩模，将导电金属柱镀在柱状电镀掩模的开口中，剥离电镀掩模; 剥离剥离的基底电镀掩模下方的导电层。 此外，保护性外涂层可以沉积在暴露的铜表面上。

公开(公告)号：US4983250A

公开(公告)日：1991-01-08

申请号：US367083

申请日：1989-06-16

Applicant: Ju-Don T. Pan

Inventor： Ju-Don T. Pan

IPC: H01L21/3205 ,  H01L21/768 ,  H05K3/06 ,  H05K3/38 ,  H05K3/46

CPC classification number: H01L21/76838 ,  H01L21/32051 ,  H05K3/062 ,  H05K2203/107 ,  H05K3/388 ,  H05K3/467

Abstract: Forming an electrical interconnect by applying an adhesion layer over a substrate, applying an electrical conductor layer over the adhesion layer, and applying a reacting layer over the electrical conductor layer. A laser beam is directed over the reacting layer in a desired pattern to interdiffuse the reacting and conductor layers and form a reaction product. The reaction product is used as an etch mask for etching away the reacting layer, the conductor layer, and the adhesion layer outside of the reaction product.

Abstract translation: 通过在衬底上施加粘附层形成电互连，在粘合层上施加电导体层，以及在电导体层上施加反应层。 以期望的图案将激光束引导到反应层上，以相互扩散反应和导体层并形成反应产物。 反应产物用作蚀刻掩模，用于在反应产物外部蚀刻反应层，导体层和粘附层。

公开(公告)号：US4874493A

公开(公告)日：1989-10-17

申请号：US174054

申请日：1988-03-28

Applicant: Ju-Don T. Pan

Inventor： Ju-Don T. Pan

IPC: C23C14/04 ,  C23C14/46 ,  H05K3/40

CPC classification number: C23C14/046 ,  C23C14/46 ,  H05K3/4076

Abstract: A process for filling cavities in a flat surface on a substrate by metal deposition which includes depositing a film of metal onto the flat surface and cavities in a substantially perpendicular direction to the surface, and simultaneously re-sputtering and deposited film on the flat surface by ion beam milling at an angle to the surface of the substrate for achieving the deposition of metal into the cavities and filling the cavities without leaving any film on the flat surface.

Abstract translation: 一种用于通过金属沉积在基板上的平坦表面中填充空腔的方法，该方法包括：在平坦表面上沉积金属膜，并在大致垂直于该表面的方向上沉积空腔，同时通过在平坦表面上重新溅射和沉积膜 离子束铣削与衬底的表面成一定角度，以实现金属沉积到空腔中并填充空腔而不在平坦表面上留下任何膜。