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    Dual level contacts and method for forming
    2.
    发明授权
    Dual level contacts and method for forming 失效
    双层接触和成型方法

    公开(公告)号：US06534389B1

    公开(公告)日：2003-03-18

    申请号：US09521977

    申请日：2000-03-09

    申请人： Thomas G. Ference ,  Kurt R. Kimmel ,  Alain Loiseau ,  Jed H. Rankin

    发明人： Thomas G. Ference ,  Kurt R. Kimmel ,  Alain Loiseau ,  Jed H. Rankin

    IPC分类号： H01L213205

    CPC分类号： H01L21/76897 ,  H01L21/76895

    摘要： A method for making electrical contacts to device regions in a semiconductor substrate, and the resulting structure, is presented. A first set of borderless contacts is initially formed. This first set of contacts is then contacted by a second series of smaller, upper-level contacts. The second set of contacts also contact the gate of the device. The structure which results has a form wherein there are stacked contacts to the diffusion layer, and a single level contact to the device gate. The structure further provides local interconnectability over gate structures.

    摘要翻译： 提出了一种用于与半导体衬底中的器件区域进行电接触的方法及其结果。 最初形成了第一套无边界接触。 然后第一组联系人被第二系列较小的上层联系人联系起来。 第二组触点也与设备的门接触。 结果是具有与扩散层的堆叠接触的形式，以及与器件栅极的单级接触。 该结构还提供了栅极结构上的局部互连性。

    Microelectronic substrate having removable edge extension element
    5.
    发明授权
    Microelectronic substrate having removable edge extension element 有权
    具有可移除边缘延伸元件的微电子基板

    公开(公告)号：US08202460B2

    公开(公告)日：2012-06-19

    申请号：US11162765

    申请日：2005-09-22

    申请人： Charles W. Koburger, III ,  Steven J. Holmes ,  David V. Horak ,  Kurt R. Kimmel ,  Karen E. Petrillo ,  Christopher F. Robinson

    发明人： Charles W. Koburger, III ,  Steven J. Holmes ,  David V. Horak ,  Kurt R. Kimmel ,  Karen E. Petrillo ,  Christopher F. Robinson

    IPC分类号： B29C45/14

    CPC分类号： G03F7/70691 ,  G03F7/70341 ,  G03F7/70808

    摘要： An article including a microelectronic substrate is provided as an article usable during the processing of the microelectronic substrate. Such article includes a microelectronic substrate having a front surface, a rear surface opposite the front surface and a peripheral edge at boundaries of the front and rear surfaces. The front surface is a major surface of the article. A removable annular edge extension element having a front surface, a rear surface and an inner edge extending between the front and rear surfaces has the inner edge joined to the peripheral edge of the microelectronic substrate. In such way, a continuous surface is formed which includes the front surface of the edge extension element and the front surface of the microelectronic substrate, the continuous surface being substantially co-planar and flat where the peripheral edge is joined to the inner edge.

    摘要翻译： 提供包括微电子衬底的制品作为在微电子衬底的处理期间可用的制品。 这种物品包括具有前表面，与前表面相对的后表面和在前表面和后表面的边界处的周边边缘的微电子基底。 前表面是物品的主要表面。 具有前表面，后表面和在前表面和后表面之间延伸的内边缘的可拆卸的环形边缘延伸元件具有接合到微电子基板的周边边缘的内边缘。 以这种方式，形成包括边缘延伸元件的前表面和微电子基底的前表面的连续表面，连续表面基本上共面且平坦，其中周边边缘连接到内边缘。

    MICROELECTRONIC SUBSTRATE HAVING REMOVABLE EDGE EXTENSION ELEMENT
    6.
    发明申请
    MICROELECTRONIC SUBSTRATE HAVING REMOVABLE EDGE EXTENSION ELEMENT 有权
    具有可移除边缘延伸元件的微电子基板

    公开(公告)号：US20120241913A1

    公开(公告)日：2012-09-27

    申请号：US13490239

    申请日：2012-06-06

    申请人： Charles W. Koburger, III ,  Steven J. Holmes ,  David V. Horak ,  Kurt R. Kimmel ,  Karen E. Petrillo ,  Christopher F. Robinson

    发明人： Charles W. Koburger, III ,  Steven J. Holmes ,  David V. Horak ,  Kurt R. Kimmel ,  Karen E. Petrillo ,  Christopher F. Robinson

    IPC分类号： H01L29/06

    CPC分类号： G03F7/70691 ,  G03F7/70341 ,  G03F7/70808

    摘要： An article including a microelectronic substrate is provided as an article usable during the processing of the microelectronic substrate. Such article includes a microelectronic substrate having a front surface, a rear surface opposite the front surface and a peripheral edge at boundaries of the front and rear surfaces. The front surface is a major surface of the article. A removable annular edge extension element having a front surface, a rear surface and an inner edge extending between the front and rear surfaces has the inner edge joined to the peripheral edge of the microelectronic substrate. In such way, a continuous surface is formed which includes the front surface of the edge extension element extending laterally from the peripheral edge of the microelectronic substrate and the front surface of the microelectronic substrate, the continuous surface being substantially co-planar and flat where the peripheral edge is joined to the inner edge.

    摘要翻译： 提供包括微电子衬底的制品作为在微电子衬底的处理期间可用的制品。 这种物品包括具有前表面，与前表面相对的后表面和在前表面和后表面的边界处的周边边缘的微电子基底。 前表面是物品的主要表面。 具有前表面，后表面和在前表面和后表面之间延伸的内边缘的可拆卸的环形边缘延伸元件具有接合到微电子基板的周边边缘的内边缘。 以这种方式，形成连续表面，其包括边缘延伸元件的前表面，该边缘延伸元件从微电子基底的周边边缘和微电子基底的前表面横向延伸，连续表面基本上共平面且平坦， 周缘连接到内边缘。

    ELECTRODE DESIGN FOR EUV DISCHARGE PLASMA SOURCE
    7.
    发明申请
    ELECTRODE DESIGN FOR EUV DISCHARGE PLASMA SOURCE 审中-公开
    用于EUV放电等离子体源的电极设计

    公开(公告)号：US20090095924A1

    公开(公告)日：2009-04-16

    申请号：US11871440

    申请日：2007-10-12

    申请人： Kurt R. Kimmel ,  Chiew-seng Koay

    发明人： Kurt R. Kimmel ,  Chiew-seng Koay

    IPC分类号： G01J1/00

    CPC分类号： H05G2/003 ,  H05G2/005

    摘要： An apparatus for producing an extreme ultraviolet (EUV) discharge includes a metal source, a laser that produces a focused laser beam, and electrode operatively coupled to the metal source. The electrode includes a plurality of discrete metal retaining zones that deliver a controlled volume of metal into the focused laser beam to produce an EUV discharge plasma.

    摘要翻译： 用于产生极紫外（EUV）放电的装置包括金属源，产生聚焦激光束的激光器和可操作地耦合到金属源的电极。 电极包括多个离散的金属保持区域，其将受控体积的金属输送到聚焦的激光束中以产生EUV放电等离子体。

    X-ray mask pellicle
    8.
    发明授权
    X-ray mask pellicle 失效
    X射线面具防护薄膜

    公开(公告)号：US5793836A

    公开(公告)日：1998-08-11

    申请号：US716657

    申请日：1996-09-06

    申请人： Juan R. Maldonado ,  Raul E. Acosta ,  Marie Angelopoulos ,  Fuad E. Doany ,  Chandrasekhar Narayan ,  Andrew T. S. Pomerene ,  Jane M. Shaw ,  Kurt R. Kimmel

    发明人： Juan R. Maldonado ,  Raul E. Acosta ,  Marie Angelopoulos ,  Fuad E. Doany ,  Chandrasekhar Narayan ,  Andrew T. S. Pomerene ,  Jane M. Shaw ,  Kurt R. Kimmel

    IPC分类号： G03F1/00 ,  G03F1/22 ,  G03F1/62 ,  G03F1/64 ,  G03F7/20 ,  H01L21/027 ,  H05K1/00

    CPC分类号： G03F1/62 ,  G03F1/22 ,  G03F1/64 ,  G03F7/70691

    摘要： An X-ray mask pellicle is capable of protecting the X-ray mask from contaminants and the wafer from contact with the X-ray absorber material of the mask. The X-ray mask pellicle is sufficiently thin to allow X-ray exposure at the required mask to wafer gaps yet is sufficiently durable, replaceable, tough and X-ray resistant to be used in X-ray lithography. A thin (organic or inorganic) X-ray mask pellicle to be placed covering the X-ray mask pattern area is fabricated as a thin film and attached to a support ring. A selected area of the pellicle film, tailored to cover the absorber pattern in the X-ray mask, is etched to decrease its thickness to below 2 .mu.m. If the thin film of the pellicle is not itself conductive, a thin conductive film may be coated on both sides. In an alternative embodiment, the separation between the pellicle and the X-ray mask can be achieved by forming the mask with a stepped profile.

    摘要翻译： X射线掩模防护薄膜组件能够保护X射线掩模免受污染物和晶片与掩模的X射线吸收材料的接触。 X射线掩模防护薄膜是足够薄的，以允许所需掩模的X射线暴露于晶片间隙，而且在X射线光刻中使用的是足够耐用的，可更换的，坚固的和耐X射线的。 将覆盖X​​射线掩模图案区域的薄（有机或无机）X射线掩模防护薄膜组件制成薄膜并附着在支撑环上。 为了覆盖X射线掩模中的吸收体图案而定制的防护薄膜的选定区域被蚀刻以将其厚度减小到低于2μm。 如果防护薄膜的薄膜本身不是导电的，则可以在两侧涂覆薄导电膜。 在替代实施例中，防护薄膜组件和X射线掩模之间的分离可以通过以阶梯轮廓形成掩模来实现。

    Recovery of an anodically bonded glass device from a susstrate by use of a metal interlayer
    9.
    发明授权
    Recovery of an anodically bonded glass device from a susstrate by use of a metal interlayer 失效
    通过使用金属中间层从怀疑物回收阳极结合的玻璃器件

    公开(公告)号：US5538151A

    公开(公告)日：1996-07-23

    申请号：US375769

    申请日：1995-01-20

    申请人： Thomas B. Faure ,  Kurt R. Kimmel ,  Wilbur D. Pricer ,  Charles A. Whiting

    发明人： Thomas B. Faure ,  Kurt R. Kimmel ,  Wilbur D. Pricer ,  Charles A. Whiting

    IPC分类号： G03F1/22 ,  G03F1/50 ,  G03F1/60 ,  H01L21/00 ,  B44C1/22

    CPC分类号： G03F1/22 ,  G03F1/50 ,  G03F1/60

    摘要： A structure and method for removing and recovering an anodically bonded glass device from a substrate using a metal interlayer interposed between the glass and the substrate is provided. As used in semiconductor mask fabrication, the structure comprises a silicon wafer substrate coated with a membrane on which a metal interlayer is disposed. The metal interlayer and a glass device are anodically bonded together. Recovery of the glass device is accomplished by chemically and mechanically removing the wafer and its membrane from the metal interlayer. The membrane is preferably removed using reactive ion etching to which the metal interlayer is resistant. The metal interlayer is then removed from the glass device using a highly corrosive chemical solution. The recovered glass device may then be reused.

    摘要翻译： 提供了一种使用夹在玻璃和基板之间的金属夹层从基板去除和回收阳极粘合的玻璃器件的结构和方法。 如在半导体掩模制造中使用的，该结构包括涂覆有膜的硅晶片衬底，金属中间层设置在膜上。 将金属中间层和玻璃器件阳极结合在一起。 玻璃器件的回收是通过化学和机械地从金属中间层除去晶片及其膜而实现的。 优选使用金属中间层抵抗的反应离子蚀刻去除膜。 然后使用高度腐蚀性的化学溶液从玻璃装置中除去金属中间层。 然后可以重新使用回收的玻璃装置。

    Process for X-ray mask warpage reduction
    10.
    发明授权
    Process for X-ray mask warpage reduction 失效
    X射线掩模翘曲降低的过程

    公开(公告)号：US5124561A

    公开(公告)日：1992-06-23

    申请号：US680216

    申请日：1991-04-04

    申请人： Thomas B. Faure ,  Kurt R. Kimmel ,  James G. Ryan ,  Timothy D. Sullivan

    发明人： Thomas B. Faure ,  Kurt R. Kimmel ,  James G. Ryan ,  Timothy D. Sullivan

    IPC分类号： G03F1/22 ,  H01L21/027 ,  H01L21/30

    CPC分类号： G03F1/22

    摘要： An X-ray mask substrate includes a silicon wafer having a square, central region etched to a thin, tensile membrane and a highly tensile film deposited on the bottom surface of the substrate to reduce substrate warpage. The square, central region of the substrate is adapted to support X-ray absorbing material during the lithography process. A layer of highly tensile film such as tungsten is deposited on the lower side of the substrate to induce a bending moment on the substrate opposite that induced during the substrate fabrication process. The thickness of the film layer is directly proportional to the amount of warpage induced in the substrate during the fabrication process. A support ring is bonded to the peripheral region of the substrate to provide integrity and support.

    摘要翻译： X射线掩模基板包括具有蚀刻到薄的拉伸膜的正方形中心区域和沉积在基板的底表面上的高拉伸膜的硅晶片，以减少基板翘曲。 衬底的正方形中心区域适于在光刻工艺期间支撑X射线吸收材料。 在基板的下侧沉积有诸如钨的高强度拉伸膜层，以在基板制造过程中引起与基板相反的弯矩。 膜层的厚度与在制造过程中在衬底中引起的翘曲量成正比。 支撑环结合到基板的周边区域以提供完整性和支撑。