摘要:
Hollow bodies having a silicon-comprising shell, are produced by, in a gas comprising at least one silane of the general formula SinH2n+2−mXm with n=1 to 4, m=0 to 2n+2 and X=halogen, (a) generating a non-thermal plasma by an AC voltage of frequency f, or operating a light arc, or introducing electromagnetic energy in the infrared region into the gas, giving a resulting phase which (b) is dispersed in a wetting agent and distilled, and then (c) the distillate is contacted at least once with a mixture of at least two of the substances hydrofluoric acid, nitric acid, water, giving a solid residue comprising hollow bodies having a silicon-comprising shell after the conversion reaction of the distillate with the mixture has abated or ended.
摘要:
The invention relates to a process for preparing dimeric and/or trimeric silanes by reaction of monosilane in noble gas in a non-thermal plasma, and also to a plant for performance of this process.
摘要:
The invention relates to a process for preparing dimeric and/or trimeric silanes by conversion of monosilane in a plasma and to a plant for performance of the process.
摘要:
The invention relates to a process for producing trimeric and/or quaternary silicon compounds or trimeric and/or quaternary germanium compounds, where a mixture of silicon compounds or a mixture of germanium compounds is exposed to a nonthermal plasma, and the resulting phase is subjected at least once to a vacuum rectification and filtration.
摘要:
The invention relates to a method for producing dimeric and/or trimeric silicon compounds, in particular silicon halogen compounds. The claimed method is also suitable for producing corresponding germanium compounds. The invention also relates to a device for carrying out said method to the use of the produced silicon compounds.
摘要:
The invention relates to a method for producing dimeric and/or trimeric silicon compounds, in particular silicon halogen compounds. The claimed method is also suitable for producing corresponding germanium compounds. The invention also relates to a device for carrying out said method to the use of the produced silicon compounds.
摘要:
A controlled preparation of octachlorotrisilane and higher polychlorosilane such as DCTS and DCPS from monomeric chlorosilane, proceeds by exposing the chlorosilane to a nonthermal plasma and recycling chlorosilane that has not been converted to octachlorotrisilane into the plasma.
摘要:
Silicon-containing particles are used for protection of human cells from electromagnetic radiation in the UV range and optionally in the visible as far as the IR range, where the particles preferably take the form of clusters of primary particles having a particle size in the range from 5 to 100 nm. A particular advantage is the possibility of matching the absorption of the electromagnetic radiation to the wavelength region to be absorbed in a defined manner via the particle size. The silicon-containing particles can be used for biocompatible and biodegradable UV protection in cosmetic or medical formulations, such as preferably a sunscreen, or else in a cosmetic formulation for the UV protection of hair.
摘要:
The invention relates to a process for converting polychlorosilanes into hexachlorodisilane, by one or more trimeric polychlorosilanes or a trimeric polychlorosilane in a mixture with higher molecular weight polychlorosilanes being exposed to a gas discharge and hexachlorodisilane being formed and isolated.
摘要:
The invention relates to a process and an apparatus for controlled preparation of octachlorotrisilane from monomeric chlorosilanes, by subjecting the chlorosilanes to a thermal plasma.