公开(公告)号：US20130288436A1

公开(公告)日：2013-10-31

申请号：US13459379

申请日：2012-04-30

Applicant: Chun-Li Chou ,  Shao-Yen Ku ,  Pei-Hung Chen ,  Jui-Ping Chuang

Inventor： Chun-Li Chou ,  Shao-Yen Ku ,  Pei-Hung Chen ,  Jui-Ping Chuang

IPC: H01L21/336 ,  C11D3/28

CPC classification number: H01L27/088 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/823814 ,  H01L21/823828 ,  H01L27/092 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/66583 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7842 ,  H01L29/7848

Abstract: Some embodiments relate to a manufacturing method for a semiconductor device. In this method, a semiconductor workpiece, which includes a metal gate electrode thereon, is provided. An opening is formed in the semiconductor workpiece to expose a surface of the metal gate. Formation of the opening leaves a polymeric residue on the workpiece. To remove the polymeric residue from the workpiece, a cleaning solution that includes an organic alkali component is used.

Abstract translation: 一些实施例涉及半导体器件的制造方法。 在该方法中，提供了包括其上的金属栅电极的半导体工件。 在半导体工件中形成开口以暴露金属栅极的表面。 开口的形成在工件上留下聚合物残留物。 为了从工件中除去聚合物残渣，使用包含有机碱组分的清洁溶液。

公开(公告)号：US20130142594A1

公开(公告)日：2013-06-06

申请号：US13309283

申请日：2011-12-01

Applicant: Shao-Yen Ku ,  Ming-Jung Chen ,  Tsu-Yang Chung ,  Chi-Yun Tseng ,  Jui-Ping Chuang

Inventor： Shao-Yen Ku ,  Ming-Jung Chen ,  Tsu-Yang Chung ,  Chi-Yun Tseng ,  Jui-Ping Chuang

IPC: H01L21/677

CPC classification number: H01L21/67201

Abstract: An apparatus comprises a process chamber, and a loadlock connected to the process chamber. The loadlock is configured to have a wafer holder disposed therein. The wafer holder is configured to store a plurality of wafers, and is configured to transport the plurality of wafers away from the loadlock.

Abstract translation: 一种装置包括处理室和连接到处理室的负载锁。 负载锁被配置为具有设置在其中的晶片保持架。 晶片保持器被配置为存储多个晶片，并且被配置为将多个晶片远离装载锁传送。

公开(公告)号：US06553335B2

公开(公告)日：2003-04-22

申请号：US09886838

申请日：2001-06-21

Applicant: Jim-Jey Huang ,  Tain-Chen Hu ,  Jui-Ping Chuang

Inventor： Jim-Jey Huang ,  Tain-Chen Hu ,  Jui-Ping Chuang

IPC: G06E1130

CPC classification number: H01L21/67253 ,  H01J37/32862 ,  H01J37/32963

Abstract: A method for determining end-point in a chamber cleaning process is disclosed which can be carried out by first providing a chamber that has a cavity for conducting a semiconductor fabrication process therein, then mounting a crystal sensor on a surface of the chamber cavity at a position that the sensor is exposed to gases or liquids or generated by the fabrication process; conducting a semiconductor fabrication process in the chamber; flowing a cleaning fluid into and in-situ cleaning the surface of the chamber cavity; inputting an oscillating frequency into the crystal sensor and monitoring an output frequency of oscillation from the sensor; and comparing the output frequency of oscillation to an output frequency from a crystal sensor that has a clean surface and determining when the surface of the chamber cavity is cleaned.

公开(公告)号：US06429130B1

公开(公告)日：2002-08-06

申请号：US09451231

申请日：1999-11-29

Applicant: Jui-Ping Chuang

Inventor： Jui-Ping Chuang

IPC: H01L21302

CPC classification number: B24B37/013 ,  B24B49/12

Abstract: A method and an apparatus for determining end point in a chemical mechanical polishing process by utilizing two separate laser beams are provided. When two separate laser beams of different wavelengths are utilized, the difference in the wavelengths is at least about 50 nm. For instance, one wavelength may be about 633 nm, while the other wavelength may be about 700˜950 nm. When two laser beams of different incident angles are utilized, the difference in the angles may be at least 2°, and preferably at least 5°.

Abstract translation: 提供了一种通过利用两个单独的激光束来确定化学机械抛光工艺中的终点的方法和装置。 当使用不同波长的两个分离的激光束时，波长的差值至少为约50nm。 例如，一个波长可以是约633nm，而另一个波长可以是约700-950nm。 当使用具有不同入射角的两个激光束时，角度差可以是至少2°，优选至少5°。

公开(公告)号：US08916429B2

公开(公告)日：2014-12-23

申请号：US13459379

申请日：2012-04-30

Applicant: Chun-Li Chou ,  Shao-Yen Ku ,  Pei-Hung Chen ,  Jui-Ping Chuang

Inventor： Chun-Li Chou ,  Shao-Yen Ku ,  Pei-Hung Chen ,  Jui-Ping Chuang

IPC: H01L21/336

CPC classification number: H01L27/088 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/823814 ,  H01L21/823828 ,  H01L27/092 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/66583 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7842 ,  H01L29/7848

Abstract: Some embodiments relate to a manufacturing method for a semiconductor device. In this method, a semiconductor workpiece, which includes a metal gate electrode thereon, is provided. An opening is formed in the semiconductor workpiece to expose a surface of the metal gate. Formation of the opening leaves a polymeric residue on the workpiece. To remove the polymeric residue from the workpiece, a cleaning solution that includes an organic alkali component is used.

Abstract translation: 一些实施例涉及半导体器件的制造方法。 在该方法中，提供了包括其上的金属栅电极的半导体工件。 在半导体工件中形成开口以暴露金属栅极的表面。 开口的形成在工件上留下聚合物残留物。 为了从工件中除去聚合物残渣，使用包含有机碱组分的清洁溶液。

公开(公告)号：US06716740B2

公开(公告)日：2004-04-06

申请号：US09974584

申请日：2001-10-09

Applicant: Shih-Ming Wang ,  Long-Shang Chuang ,  Jui-Ping Chuang ,  Chin-Hsiung Ho ,  Mei-Yen Li ,  Chien-Kang Chou

Inventor： Shih-Ming Wang ,  Long-Shang Chuang ,  Jui-Ping Chuang ,  Chin-Hsiung Ho ,  Mei-Yen Li ,  Chien-Kang Chou

IPC: H01L214763

CPC classification number: H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/31612 ,  H01L21/324 ,  H01L21/76837

Abstract: A method for depositing an inter-metal-dielectric layer on a semiconductor substrate by plasma chemical vapor deposition without the layer cracking defect is disclosed. The semiconductor substrate is first heat-treated in the same plasma process chamber to a temperature of at least 300° C. for a length of time sufficient to outgas a surface of the semiconductor substrate. The impurity gases absorbed on the surface of the semiconductor substrate can be effectively outgassed during the heat treatment process such that they are not trapped under an IMD layer deposited in a subsequent plasma deposition process. The method effectively minimizes or eliminates completely the IMD layer cracking defect of the dielectric layer.

Abstract translation: 公开了一种通过等离子体化学气相沉积在半导体衬底上沉积金属间介电层而不发生层裂纹缺陷的方法。 首先在相同的等离子体处理室中将半导体衬底热处理至至少300℃的温度足以排出半导体衬底的表面的时间长度。 吸收在半导体衬底的表面上的杂质气体可以在热处理过程中被有效地除气，使得它们不被捕获在随后的等离子体沉积工艺中沉积的IMD层下面。 该方法有效地最小化或消除了介电层的IMD层裂纹缺陷。

公开(公告)号：US06524959B1

公开(公告)日：2003-02-25

申请号：US09686766

申请日：2000-10-10

Applicant: Chen-Fa Lu ,  Chen-Peng Fan ,  Jui-Ping Chuang ,  Tien-Chen Hu

Inventor： Chen-Fa Lu ,  Chen-Peng Fan ,  Jui-Ping Chuang ,  Tien-Chen Hu

IPC: H01L21302

CPC classification number: B24B37/013 ,  B24B49/12

Abstract: Within a method for fabricating a microelectronic fabrication there is first provided a substrate having formed thereover a minimum of one microelectronic layer, where the minimum of one microelectronic layer is at least partially transparent to an incident radiation beam. There is then chemical mechanical polish (CMP) planarized the minimum of one microelectronic layer, while employing a chemical mechanical polish (CMP) planarizing method, to form from the minimum of one microelectronic layer a minimum of one chemical mechanical polish (CMP) planarized microelectronic layer. Within the method, a chemical mechanical polish (CMP) planarizing endpoint within the chemical mechanical polish (CMP) planarizing method with respect to the minimum of one chemical mechanical polish (CMP) planarized microelectronic layer is determined while employing the incident radiation beam incident upon the minimum of one microelectronic layer, in conjunction with a derivative of a property of a minimum of one reflected portion of the incident radiation beam reflected from the minimum of one microelectronic layer as the minimum of one microelectronic layer is chemical mechanical polish (CMP) planarized to form the minimum of one chemical mechanical polish (CMP) planarized microelectronic layer.

Abstract translation: 在用于制造微电子制造的方法中，首先提供了在至少一个微电子层之上形成的衬底，其中一个微电子层的最小值对入射的辐射束至少部分透明。 然后化学机械抛光（CMP）将最小的一个微电子层平坦化，同时采用化学机械抛光（CMP）平面化方法，从最小的一个微电子层形成最少一个化学机械抛光（CMP）平面化微电子 层。 在该方法中，在使用入射到所述化学机械抛光（CMP）平坦化微电子层的入射辐射束的同时，在化学机械抛光（CMP）平面化方法中，化学机械抛光（CMP）平面化方法中的化学机械抛光（CMP） 一个微电子层的最小值与从一个微电子层的最小值反射的入射辐射束的最小一个反射部分的性质的导数结合，作为一个微电子层的最小值是化学机械抛光（CMP）平坦化为 形成一个化学机械抛光（CMP）平面化微电子层的最小值。