-
公开(公告)号：US08908116B2
公开(公告)日：2014-12-09
申请号：US13277262
申请日：2011-10-20
IPC分类号： G02F1/136 , G02F1/1335 , G02F1/1343 , G02F1/1362
CPC分类号： G02F1/133305 , G02F1/133345 , G02F1/133514 , G02F1/134363 , G02F1/136227 , G02F1/1368
摘要： A liquid crystal display device includes a first substrate and a second substrate with a liquid crystal layer therebetween. The first substrate includes drain lines, gate lines, thin-film transistors that output signals to pixel electrodes, and an organic film that is formed between each thin-film transistor and each pixel electrode. The organic film has a contact hole for electrical connection between a source electrode of each thin-film transistor and each pixel electrode. A step is formed in a layer underlying the organic film and an edge portion of the organic film toward the thin-film transistor, the edge portion forming the contact hole, being formed to lie on a lower plane of the step. A sidewall part of the contact hole which is formed in the organic film is formed to have a taper angle of at least 60 degrees.
摘要翻译： 液晶显示装置包括第一基板和其间具有液晶层的第二基板。 第一衬底包括漏极线，栅极线，向像素电极输出信号的薄膜晶体管，以及形成在每个薄膜晶体管和每个像素电极之间的有机膜。 有机膜具有用于在每个薄膜晶体管的源电极和每个像素电极之间进行电连接的接触孔。 在有机膜下面的层和朝向薄膜晶体管的有机膜的边缘部分形成台阶，形成接触孔的边缘部分位于台阶的下平面上。 形成在有机膜中的接触孔的侧壁部形成为具有至少60度的锥角。
-
公开(公告)号：US20120105778A1
公开(公告)日：2012-05-03
申请号：US13277262
申请日：2011-10-20
IPC分类号： G02F1/1335 , G02F1/1333
CPC分类号： G02F1/133305 , G02F1/133345 , G02F1/133514 , G02F1/134363 , G02F1/136227 , G02F1/1368
摘要： A liquid crystal display device includes a first substrate and a second substrate with a liquid crystal layer therebetween. The first substrate includes drain lines, gate lines, thin-film transistors that output signals to pixel electrodes, and an organic film that is formed between each thin-film transistor and each pixel electrode. The organic film has a contact hole for electrical connection between a source electrode of each thin-film transistor and each pixel electrode. A step is formed in a layer underlying the organic film and an edge portion of the organic film toward the thin-film transistor, the edge portion forming the contact hole, being formed to lie on a lower plane of the step. A sidewall part of the contact hole which is formed in the organic film is formed to have a taper angle of at least 60 degrees.
摘要翻译： 液晶显示装置包括第一基板和其间具有液晶层的第二基板。 第一衬底包括漏极线，栅极线，向像素电极输出信号的薄膜晶体管，以及形成在每个薄膜晶体管和每个像素电极之间的有机膜。 有机膜具有用于在每个薄膜晶体管的源电极和每个像素电极之间进行电连接的接触孔。 在有机膜下面的层和朝向薄膜晶体管的有机膜的边缘部分形成台阶，形成接触孔的边缘部分位于台阶的下平面上。 形成在有机膜中的接触孔的侧壁部形成为具有至少60度的锥角。
-
公开(公告)号：US08318527B2
公开(公告)日：2012-11-27
申请号：US13253232
申请日：2011-10-05
申请人： Jun Fujiyoshi , Yasukazu Kimura , Hideo Tanabe
发明人： Jun Fujiyoshi , Yasukazu Kimura , Hideo Tanabe
IPC分类号： H01L33/08
CPC分类号： G02F1/133516 , G02B5/20
摘要： Disclosed is a manufacturing method of a liquid crystal display device where first color filters, second color filters and third color filters which are formed adjacent to each other are provided, the first color filter and the second color filter are patterned in such a manner that one edge portion of the second color filter overlaps an edge portion of the first color filter, and the second color filter and the third color filter are patterned in such a manner that an edge portion of the third color filter overlaps the other edge portion of the second color filter wherein in an exposure step for patterning the second color filter, an exposure quantity in a region corresponding to one edge portion and an exposure quantity in a region corresponding to the other edge portion differ from each other.
摘要翻译： 公开了一种液晶显示装置的制造方法，其中设置有彼此相邻形成的第一滤色器，第二滤色器和第三滤色器，第一滤色器和第二滤色器被图案化， 第二滤色器的边缘部分与第一滤色器的边缘部分重叠，并且第二滤色器和第三滤色器被图案化，使得第三滤色器的边缘部分与第二滤色器的边缘部分重叠， 滤色器，其中在用于图案化第二滤色器的曝光步骤中，与对应于另一边缘部分的区域中的一个边缘部分相对应的区域中的曝光量和曝光量彼此不同。
-
公开(公告)号：US20120088325A1
公开(公告)日：2012-04-12
申请号：US13253232
申请日：2011-10-05
申请人： Jun Fujiyoshi , Yasukazu Kimura , Hideo Tanabe
发明人： Jun Fujiyoshi , Yasukazu Kimura , Hideo Tanabe
IPC分类号： H01L33/08
CPC分类号： G02F1/133516 , G02B5/20
摘要： Disclosed is a manufacturing method of a liquid crystal display device where first color filters, second color filters and third color filters which are formed adjacent to each other are provided, the first color filter and the second color filter are patterned in such a manner that one edge portion of the second color filter overlaps an edge portion of the first color filter, and the second color filter and the third color filter are patterned in such a manner that an edge portion of the third color filter overlaps the other edge portion of the second color filter wherein in an exposure step for patterning the second color filter, an exposure quantity in a region corresponding to one edge portion and an exposure quantity in a region corresponding to the other edge portion differ from each other.
摘要翻译： 公开了一种液晶显示装置的制造方法，其中设置有彼此相邻形成的第一滤色器，第二滤色器和第三滤色器，第一滤色器和第二滤色器被图案化， 第二滤色器的边缘部分与第一滤色器的边缘部分重叠，并且第二滤色器和第三滤色器被图案化，使得第三滤色器的边缘部分与第二滤色器的边缘部分重叠， 滤色器，其中在用于图案化第二滤色器的曝光步骤中，与对应于另一边缘部分的区域中的一个边缘部分相对应的区域中的曝光量和曝光量彼此不同。
-
公开(公告)号：US07388228B2
公开(公告)日：2008-06-17
申请号：US11174674
申请日：2005-07-06
申请人： Hideo Tanabe , Shigeo Shimomura , Makoto Ohkura , Masaaki Kurita , Yasukazu Kimura , Takao Nakamura
发明人： Hideo Tanabe , Shigeo Shimomura , Makoto Ohkura , Masaaki Kurita , Yasukazu Kimura , Takao Nakamura
CPC分类号： H01L27/1288 , G02F1/13454 , G02F1/136227 , G02F1/1368 , H01L27/1214 , H01L29/66757 , H01L29/78621 , H01L29/78633
摘要： Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.
摘要翻译： 用于显示装置的薄膜晶体管每个都包括由多晶硅制成的半导体层，该多晶硅具有沟道区，沟道区两侧的漏极和源极区，掺杂有高浓度的杂质;以及LDD区，其布置在漏极区和 沟道区域或源极区域和沟道区域之间，并掺杂低浓度的杂质。 在半导体层的上表面上形成绝缘膜，其厚度随其延伸到沟道区，LDD区，漏极和源极区而呈阶梯状减小; 并且通过绝缘膜形成在沟道区域上方的栅电极。 这种结构可以提高数值孔径并且可以抑制薄膜晶体管的周边中的阶梯部分的大小。
-
公开(公告)号：US20050242354A1
公开(公告)日：2005-11-03
申请号：US11174674
申请日：2005-07-06
申请人： Hideo Tanabe , Shigeo Shimomura , Makoto Ohkura , Masaaki Kurita , Yasukazu Kimura , Takao Nakamura
发明人： Hideo Tanabe , Shigeo Shimomura , Makoto Ohkura , Masaaki Kurita , Yasukazu Kimura , Takao Nakamura
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/76 , H01L29/786
CPC分类号： H01L27/1288 , G02F1/13454 , G02F1/136227 , G02F1/1368 , H01L27/1214 , H01L29/66757 , H01L29/78621 , H01L29/78633
摘要： Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.
摘要翻译： 用于显示装置的薄膜晶体管每个都包括由多晶硅制成的半导体层，该多晶硅具有沟道区，沟道区两侧的漏极和源极区，掺杂有高浓度的杂质;以及LDD区，其布置在漏极区和 沟道区域或源极区域和沟道区域之间，并掺杂低浓度的杂质。 在半导体层的上表面上形成绝缘膜，其厚度随其延伸到沟道区，LDD区，漏极和源极区而呈阶梯状减小; 并且通过绝缘膜形成在沟道区域上方的栅电极。 这种结构可以提高数值孔径并且可以抑制薄膜晶体管的周边中的阶梯部分的大小。
-
7.发明授权Display device with an improved contact hole arrangement for contacting a semiconductor layer through an insulation film 有权具有改进的接触孔布置的显示装置，用于使半导体层通过绝缘膜接触公开(公告)号：US06936847B2
公开(公告)日：2005-08-30
申请号：US10408451
申请日：2003-04-08
申请人： Hideo Tanabe , Shigeo Shimomura , Makoto Ohkura , Masaaki Kurita , Yasukazu Kimura , Takao Nakamura
发明人： Hideo Tanabe , Shigeo Shimomura , Makoto Ohkura , Masaaki Kurita , Yasukazu Kimura , Takao Nakamura
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/76 , H01L29/786 , H01L29/15 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L27/1288 , G02F1/13454 , G02F1/136227 , G02F1/1368 , H01L27/1214 , H01L29/66757 , H01L29/78621 , H01L29/78633
摘要： Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.
摘要翻译： 用于显示装置的薄膜晶体管每个都包括由多晶硅制成的半导体层，该多晶硅具有沟道区，沟道区两侧的漏极和源极区，掺杂有高浓度的杂质;以及LDD区，其布置在漏极区和 沟道区域或源极区域和沟道区域之间，并掺杂低浓度的杂质。 在半导体层的上表面上形成绝缘膜，其厚度随其延伸到沟道区，LDD区，漏极和源极区而呈阶梯状减小; 并且通过绝缘膜形成在沟道区域上方的栅电极。 这种结构可以提高数值孔径并且可以抑制薄膜晶体管的周边中的阶梯部分的大小。
-
公开(公告)号：US06624443B2
公开(公告)日：2003-09-23
申请号：US10066702
申请日：2002-02-06
申请人： Hideo Tanabe , Shigeo Shimomura , Makoto Ohkura , Masaaki Kurita , Yasukazu Kimura , Takao Nakamura
发明人： Hideo Tanabe , Shigeo Shimomura , Makoto Ohkura , Masaaki Kurita , Yasukazu Kimura , Takao Nakamura
IPC分类号： H01L2701
CPC分类号： H01L27/1288 , G02F1/13454 , G02F1/136227 , G02F1/1368 , H01L27/1214 , H01L29/66757 , H01L29/78621 , H01L29/78633
摘要： Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.
-
公开(公告)号：US07570337B2
公开(公告)日：2009-08-04
申请号：US11898278
申请日：2007-09-11
IPC分类号： G02F1/1345
CPC分类号： G02F1/133345 , G02F1/133555 , G02F1/13452 , G02F2001/133357
摘要： In a liquid crystal display device disposed with reflective regions and transmissive regions, two organic insulating films are formed on a connection terminal portion and radial non-uniformities are prevented from occurring when applying the upper organic insulating film. Pixel portions including transmissive regions and reflective regions are formed, and a second organic insulating film is formed between a metal layer that forms reflective electrodes and a transparent conductive film that forms pixel electrodes to planarize concavo-convexities in the reflective electrodes. In contact holes of a connection terminal portion, the inclination of a first organic resin film is made smooth to control the occurrence of radial non-uniformities occurring in the second organic insulating film.
摘要翻译： 在设置有反射区域和透射区域的液晶显示装置中，在连接端子部分上形成两个有机绝缘膜，并且当施加上部有机绝缘膜时防止发生径向不均匀性。 形成包括透射区域和反射区域的像素部分，并且在形成反射电极的金属层和形成像素电极的透明导电膜之间形成第二有机绝缘膜，以平坦化反射电极中的凹凸。 在连接端子部分的接触孔中，使第一有机树脂膜的倾斜平滑，以控制在第二有机绝缘膜中发生的径向非均匀性的发生。
-
10.发明授权
公开(公告)号：US6111723A
公开(公告)日：2000-08-29
申请号：US84321
申请日：1998-05-26
申请人： Hisashi Takano , Naoki Koyama , Hideo Tanabe , Eijin Moriwaki , Isamu Yuito , Kazuo Shiiki , Tsuyoshi Ohnishi , Tohru Ishitani , Toshio Kobayashi , Hideo Todokoro , Chiaki Ishikawa
发明人： Hisashi Takano , Naoki Koyama , Hideo Tanabe , Eijin Moriwaki , Isamu Yuito , Kazuo Shiiki , Tsuyoshi Ohnishi , Tohru Ishitani , Toshio Kobayashi , Hideo Todokoro , Chiaki Ishikawa
CPC分类号： G11B5/3903 , G11B5/1278 , G11B5/1871 , G11B5/3103 , G11B5/3106 , G11B5/3116 , G11B5/3143 , G11B5/3163 , G11B5/3967 , G11B5/112
摘要： In a composite magnetic head comprising a magnetoresistive read head including a magnetic thin film having a magnetoresistive effect and soft magnetic members interposing the soft magnetic film between them through a non-magnetic insulation layer, an induction type write head including poles formed in a moving direction of a medium and a conductor crossing the poles, and disposed in the proximity of the magnetoresistive head, and a substrate supporting these heads, the present invention discloses a composite magnetic head characterized in that part of a floating surface inclusive of the magnetic head constituent members has recesses and the read/write operations to and from the medium are effected by the portion interposed by these recesses.
摘要翻译： 在包括具有磁阻效应的磁性薄膜的磁阻读头的复合磁头和通过非磁性绝缘层将它们插入在它们之间的软磁性部件的感应型写头，包括在移动方向上形成的磁极 的介质和导体，并且设置在磁阻头附近以及支撑这些磁头的基板上，本发明公开了一种复合磁头，其特征在于，包括磁头构成部件的浮动面的一部分 具有凹槽，并且来自介质的读/写操作由这些凹槽插入的部分实现。
-
-
-
-
-
-
-
-
-
搜索结果
64 条记录 (耗时 0.022 秒)
