公开(公告)号：US06936847B2

公开(公告)日：2005-08-30

申请号：US10408451

申请日：2003-04-08

申请人： Hideo Tanabe ,  Shigeo Shimomura ,  Makoto Ohkura ,  Masaaki Kurita ,  Yasukazu Kimura ,  Takao Nakamura

发明人： Hideo Tanabe ,  Shigeo Shimomura ,  Makoto Ohkura ,  Masaaki Kurita ,  Yasukazu Kimura ,  Takao Nakamura

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/76 ,  H01L29/786 ,  H01L29/15 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L27/1288 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/1368 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633

摘要： Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.

摘要翻译： 用于显示装置的薄膜晶体管每个都包括由多晶硅制成的半导体层，该多晶硅具有沟道区，沟道区两侧的漏极和源极区，掺杂有高浓度的杂质;以及LDD区，其布置在漏极区和 沟道区域或源极区域和沟道区域之间，并掺杂低浓度的杂质。 在半导体层的上表面上形成绝缘膜，其厚度随其延伸到沟道区，LDD区，漏极和源极区而呈阶梯状减小; 并且通过绝缘膜形成在沟道区域上方的栅电极。 这种结构可以提高数值孔径并且可以抑制薄膜晶体管的周边中的阶梯部分的大小。

公开(公告)号：US06624443B2

公开(公告)日：2003-09-23

申请号：US10066702

申请日：2002-02-06

申请人： Hideo Tanabe ,  Shigeo Shimomura ,  Makoto Ohkura ,  Masaaki Kurita ,  Yasukazu Kimura ,  Takao Nakamura

发明人： Hideo Tanabe ,  Shigeo Shimomura ,  Makoto Ohkura ,  Masaaki Kurita ,  Yasukazu Kimura ,  Takao Nakamura

IPC分类号： H01L2701

CPC分类号： H01L27/1288 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/1368 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633

摘要： Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.

公开(公告)号：US07388228B2

公开(公告)日：2008-06-17

申请号：US11174674

申请日：2005-07-06

申请人： Hideo Tanabe ,  Shigeo Shimomura ,  Makoto Ohkura ,  Masaaki Kurita ,  Yasukazu Kimura ,  Takao Nakamura

发明人： Hideo Tanabe ,  Shigeo Shimomura ,  Makoto Ohkura ,  Masaaki Kurita ,  Yasukazu Kimura ,  Takao Nakamura

IPC分类号： H01L21/84 ,  H01L29/76

CPC分类号： H01L27/1288 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/1368 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633

摘要： Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.

摘要翻译： 用于显示装置的薄膜晶体管每个都包括由多晶硅制成的半导体层，该多晶硅具有沟道区，沟道区两侧的漏极和源极区，掺杂有高浓度的杂质;以及LDD区，其布置在漏极区和 沟道区域或源极区域和沟道区域之间，并掺杂低浓度的杂质。 在半导体层的上表面上形成绝缘膜，其厚度随其延伸到沟道区，LDD区，漏极和源极区而呈阶梯状减小; 并且通过绝缘膜形成在沟道区域上方的栅电极。 这种结构可以提高数值孔径并且可以抑制薄膜晶体管的周边中的阶梯部分的大小。

公开(公告)号：US20050242354A1

公开(公告)日：2005-11-03

申请号：US11174674

申请日：2005-07-06

申请人： Hideo Tanabe ,  Shigeo Shimomura ,  Makoto Ohkura ,  Masaaki Kurita ,  Yasukazu Kimura ,  Takao Nakamura

发明人： Hideo Tanabe ,  Shigeo Shimomura ,  Makoto Ohkura ,  Masaaki Kurita ,  Yasukazu Kimura ,  Takao Nakamura

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/76 ,  H01L29/786

CPC分类号： H01L27/1288 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/1368 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633

摘要： Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.

摘要翻译： 用于显示装置的薄膜晶体管每个都包括由多晶硅制成的半导体层，该多晶硅具有沟道区，沟道区两侧的漏极和源极区，掺杂有高浓度的杂质;以及LDD区，其布置在漏极区和 沟道区域或源极区域和沟道区域之间，并掺杂低浓度的杂质。 在半导体层的上表面上形成绝缘膜，其厚度随其延伸到沟道区，LDD区，漏极和源极区而呈阶梯状减小; 并且通过绝缘膜形成在沟道区域上方的栅电极。 这种结构可以提高数值孔径并且可以抑制薄膜晶体管的周边中的阶梯部分的大小。

公开(公告)号：US06670638B2

公开(公告)日：2003-12-30

申请号：US09793972

申请日：2001-02-28

申请人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Hironaru Yamaguchi ,  Yoshinobu Kimura ,  Makoto Ohkura ,  Hironobu Abe ,  Shigeo Shimomura ,  Masakazu Saitou ,  Michiko Takahashi

发明人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Hironaru Yamaguchi ,  Yoshinobu Kimura ,  Makoto Ohkura ,  Hironobu Abe ,  Shigeo Shimomura ,  Masakazu Saitou ,  Michiko Takahashi

IPC分类号： H01L2904

CPC分类号： H01L29/66757 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/104 ,  H01L29/78675

摘要： Disclosed is a polysilicon film adapted for use in a liquid crystal display, and method of manufacturing such film. In manufacturing the film, a native oxide layer formed on a surface of an amorphous silicon film is completely removed by a hydrofluoric acid solution, followed by immersing in an H2O2 solution to newly form an extremely thin oxide layer, prior to a crystallizing processing performed by a laser beam irradiation. The crystallizing processing forms a polysilicon film formed of crystal grains Preferentially oriented on the (111) plane in a direction parallel to the substrate surface, an average crystal grain size being not larger than 300 nm, the standard deviation of the grain sizes being not larger than 30% of the average grain size, and the standard deviation of the roughness being not larger than 10% of the average grain size.

摘要翻译： 公开了适用于液晶显示器的多晶硅膜及其制造方法。 在制造膜时，通过氢氟酸溶液将形成在非晶硅膜表面上的天然氧化物层完全除去，随后在H 2 O 2溶液中浸渍以形成极薄的氧化物层，然后在结晶处理之前进行 激光束照射。 结晶处理形成由晶粒形成的多晶硅膜，在（111）面上沿着平行于基板表面的方向优先取向，平均晶粒尺寸不大于300nm，晶粒尺寸的标准偏差不大 超过平均粒径的30％，粗糙度的标准偏差不大于平均粒径的10％。

公开(公告)号：US5648792A

公开(公告)日：1997-07-15

申请号：US396604

申请日：1995-03-01

申请人： Toshihiro Sato ,  Hiroko Hayata ,  Yuichi Numata ,  Takuo Kaitoh ,  Jun Ishikawa ,  Shigeo Shimomura

发明人： Toshihiro Sato ,  Hiroko Hayata ,  Yuichi Numata ,  Takuo Kaitoh ,  Jun Ishikawa ,  Shigeo Shimomura

IPC分类号： G02F1/136 ,  G02F1/133 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  H01L29/78 ,  H01L29/786 ,  H04N5/66

CPC分类号： G09G3/3677 ,  G09G3/3648 ,  G09G3/3688 ,  G09G2310/0205 ,  G09G2310/0224 ,  G09G2320/0209 ,  G09G2320/0247 ,  G09G3/3614

摘要： A TFT display device realizing a high degree of fineness by integrally forming a TFT display panel and a drive circuit therefor by using a poly-Si film. The display device comprises TFT transistors of which the gates are connected to the scanning lines and of which the drains are connected to the signal lines that are so formed as to intersect one another substantially at right angles, a TFT display panel having pixel electrodes provided at sources of the TFT transistors, a signal line drive circuit which is formed on the display panel and permits pixel signals that are serially input to be output in parallel, and a scanning line drive circuit which is formed on the display panel and simultaneously selects the two neighboring scanning lines while changing the combination thereof for each of the fields, wherein for the pixels of two rows that are simultaneously selected by the scanning line drive circuit, the signal written into the pixels corresponding to one row has a polarity opposite to that of the signal written into the pixels corresponding to the other row. Therefore, despite the two rows are simultaneously selected, signals of opposite polarities are fed to these rows, whereby flickering decreases and noise transmitted to the signal lines and to a common plate electrode is canceled, making it possible to accomplish stable display operation.

摘要翻译： 一种通过使用多晶硅薄膜一体地形成TFT显示面板及其驱动电路而实现高度细度的TFT显示装置。 显示装置包括TFT晶体管，栅极连接到扫描线，并且其漏极连接到形成为大致直角相交的信号线; TFT显示面板，其具有设置在 TFT晶体管的源极，形成在显示面板上并允许串行输出的像素信号并行输出的信号线驱动电路和形成在显示面板上的扫描线驱动电路，同时选择两个 同时改变每个场的组合，其中对于由扫描线驱动电路同时选择的两行的像素，写入与一行相对应的像素的信号的极性与 写入与另一行对应的像素的信号。 因此，尽管同时选择两行，但是相反极性的信号被馈送到这些行，由此闪烁减少，并且传输到信号线和公共平板电极的噪声被消除，使得可以实现稳定的显示操作。

公开(公告)号：US06628261B1

公开(公告)日：2003-09-30

申请号：US09502058

申请日：2000-02-10

申请人： Hideo Sato ,  Yoshiro Mikami ,  Makoto Tsumura ,  Genshiro Kawachi ,  Tatsuya Ohkubo ,  Shigeo Shimomura ,  Kenkichi Suzuki ,  Masanao Yamamoto

发明人： Hideo Sato ,  Yoshiro Mikami ,  Makoto Tsumura ,  Genshiro Kawachi ,  Tatsuya Ohkubo ,  Shigeo Shimomura ,  Kenkichi Suzuki ,  Masanao Yamamoto

IPC分类号： G09G336

CPC分类号： G09G3/3685 ,  G09G3/3614 ,  G09G2300/0408 ,  G09G2310/0259

摘要： A drive circuit for a liquid crystal display apparatus and a large-sized liquid crystal display apparatus integrated with the drive circuit and having a reduced area occupied by the circuits. The drive circuit includes sample/hold circuits for sampling the input voltage at a predetermined timing, comparator circuits for comparing the output of the sample/hold circuits with the voltage of the signal line VD(i), switches for controlling the output voltage of the signal line, a voltage supply circuit constituted as an image signal control circuit for supplying a voltage to the switches, and control circuits for controlling the switches in accordance with the output of the comparator circuits. For the liquid crystal display panel drive circuit configured as described above, the signal line is controlled by the switches, and therefore the area occupied by the drive circuits can be reduced.

摘要翻译： 一种用于液晶显示装置的驱动电路和与驱动电路集成并且具有由电路占用的面积减小的大型液晶显示装置。 驱动电路包括用于在预定定时对输入电压进行采样的采样/保持电路，用于将采样/保持电路的输出与信号线VD（i）的电压进行比较的比较器电路，用于控制采样/保持电路的输出电压的开关 信号线，构成为用于向开关提供电压的图像信号控制电路的电压供给电路，以及根据比较器电路的输出来控制开关的控制电路。 对于如上所述配置的液晶显示面板驱动电路，信号线由开关控制，因此可以减少驱动电路占据的面积。