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1.发明申请POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS 有权可聚合的含硫酸钠和聚合物，耐腐蚀组合物和方法公开(公告)号：US20100055608A1
公开(公告)日：2010-03-04
申请号：US12549191
申请日：2009-08-27
IPC分类号： G03F7/20 , C07C309/22 , C08F228/02 , C08F18/00 , G03F7/004
CPC分类号： C08F28/02 , C07C309/12 , C07C381/12 , C07C2601/14 , C07C2602/42 , C07C2603/74 , C07D493/08 , C07D493/18 , C08F20/22 , C08F20/36 , C08F20/38 , G03F7/0045 , G03F7/0046 , G03F7/0395 , G03F7/0397 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/124 , Y10S430/126 , Y10S430/143
摘要： A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R1 is H, F, methyl or trifluoromethyl, R2, R3 and R4 are C1-C10 alkyl, alkenyl or oxoalkyl or C6-C18 aryl, aralkyl or aryloxoalkyl, or two of R2, R3 and R4 may bond together to form a ring with S, A is a C1-C10 organic group, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.
摘要翻译： 提供了具有式（1）的可聚合阴离子的锍盐，其中R 1是H，F，甲基或三氟甲基，R 2，R 3和R 4是C 1 -C 10烷基，烯基或氧代烷基或C 6 -C 18芳基，芳烷基或芳氧基烷基，或 R 2，R 3和R 4中的两个可以键合在一起形成具有S的环，A是C1-C10有机基团，n是0或1.锍盐在暴露于高能量辐射时产生非常强的磺酸。 还提供了包含衍生自锍盐的聚合物的抗蚀剂组合物。
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2.发明授权Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process 有权可聚合阴离子的锍盐和聚合物，抗蚀剂组合物和图案化工艺公开(公告)号：US08057985B2
公开(公告)日：2011-11-15
申请号：US12549191
申请日：2009-08-27
CPC分类号： C08F28/02 , C07C309/12 , C07C381/12 , C07C2601/14 , C07C2602/42 , C07C2603/74 , C07D493/08 , C07D493/18 , C08F20/22 , C08F20/36 , C08F20/38 , G03F7/0045 , G03F7/0046 , G03F7/0395 , G03F7/0397 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/124 , Y10S430/126 , Y10S430/143
摘要： A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R1 is H, F, methyl or trifluoromethyl, R2, R3 and R4 are C1-C10 alkyl, alkenyl or oxoalkyl or C6-C18 aryl, aralkyl or aryloxoalkyl, or two of R2, R3 and R4 may bond together to form a ring with S, A is a C1-C20 organic group, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.
摘要翻译： 提供了具有式（1）的可聚合阴离子的锍盐，其中R 1是H，F，甲基或三氟甲基，R 2，R 3和R 4是C 1 -C 10烷基，烯基或氧代烷基或C 6 -C 18芳基，芳烷基或芳氧基烷基，或 R 2，R 3和R 4中的两个可以键合在一起形成具有S的环，A是C1-C20有机基团，n是0或1.锍盐在暴露于高能量辐射时产生非常强的磺酸。 还提供了包含衍生自锍盐的聚合物的抗蚀剂组合物。
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公开(公告)号：US20090202943A1
公开(公告)日：2009-08-13
申请号：US12370652
申请日：2009-02-13
申请人： Youichi Ohsawa , Takeshi Kinsho , Masaki Ohashi , Seiichiro Tachibana , Takeru Watanabe , Jun Hatakeyama
发明人： Youichi Ohsawa , Takeshi Kinsho , Masaki Ohashi , Seiichiro Tachibana , Takeru Watanabe , Jun Hatakeyama
IPC分类号： G03F7/00 , C08F228/02 , C08F24/00
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111 , Y10S430/143
摘要： A positive resist composition comprises a polymer comprising recurring units having a sulfonium salt incorporated therein as a base resin which becomes soluble in alkaline developer under the action of acid. The polymer generates a strong sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition.
摘要翻译： 正型抗蚀剂组合物包含含有其中掺入其中的锍盐作为基础树脂的重复单元的聚合物，其在酸的作用下变得可溶于碱性显影剂。 聚合物在暴露于高能量辐射时产生强烈的磺酸，以促进抗蚀剂组合物中酸不稳定基团的有效断裂。
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公开(公告)号：US08062828B2
公开(公告)日：2011-11-22
申请号：US12370652
申请日：2009-02-13
申请人： Youichi Ohsawa , Takeshi Kinsho , Masaki Ohashi , Seiichiro Tachibana , Takeru Watanabe , Jun Hatakeyama
发明人： Youichi Ohsawa , Takeshi Kinsho , Masaki Ohashi , Seiichiro Tachibana , Takeru Watanabe , Jun Hatakeyama
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111 , Y10S430/143
摘要： A positive resist composition comprises a polymer comprising recurring units having a sulfonium salt incorporated therein as a base resin which becomes soluble in alkaline developer under the action of acid. The polymer generates a strong sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition.
摘要翻译： 正型抗蚀剂组合物包含含有其中掺入其中的锍盐作为基础树脂的重复单元的聚合物，其在酸的作用下变得可溶于碱性显影剂。 聚合物在暴露于高能量辐射时产生强烈的磺酸，以促进抗蚀剂组合物中酸不稳定基团的有效断裂。
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5.发明授权Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process 有权可聚合阴离子的锍盐和聚合物，抗蚀剂组合物和图案化工艺公开(公告)号：US08105748B2
公开(公告)日：2012-01-31
申请号：US12580953
申请日：2009-10-16
CPC分类号： C07D307/77 , C07C309/12 , C07C381/12 , C08F2220/303 , C08F2220/382 , G03F7/0045 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111 , Y10S430/143
摘要： A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R1 is H, F, methyl or trifluoromethyl, R2, R3 and R4 are C1-C10 alkyl, alkenyl or oxoalkyl or C6-C18 aryl, aralkyl or aryloxoalkyl, or two of R2, R3 and R4 may bond together to form a ring with S, A is a C2-C20 hydrocarbon group having cyclic structure, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.
摘要翻译： 提供了具有式（1）的可聚合阴离子的锍盐，其中R 1是H，F，甲基或三氟甲基，R 2，R 3和R 4是C 1 -C 10烷基，烯基或氧代烷基或C 6 -C 18芳基，芳烷基或芳氧基烷基，或 R 2，R 3和R 4中的两个可以键合在一起形成具有S的环，A是具有环状结构的C 2 -C 20烃基，n是0或1.锍盐在暴露于高温下时产生非常强的磺酸， 能量辐射。 还提供了包含衍生自锍盐的聚合物的抗蚀剂组合物。
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6.发明授权Sulfonium salt-containing polymer, resist composition, and patterning process 有权含锍盐的聚合物，抗蚀剂组合物和图案化工艺公开(公告)号：US08048610B2
公开(公告)日：2011-11-01
申请号：US12428933
申请日：2009-04-23
CPC分类号： G03F7/0045 , C08F220/18 , C08F220/28 , C08F220/30 , C08F220/38 , G03F7/0392 , G03F7/0397 , G03F7/2041 , Y10S430/143 , Y10S430/167
摘要： A polymer comprising recurring units having formulae (1), (2) and (3) is provided as well as a chemically amplified resist composition comprising the same. R1 is H, F, CH3 or CF3, Rf is H, F, CF3 or C2F5, A is an optionally fluorine or oxygen-substituted divalent organic group, R2, R3 and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or may form a ring with the sulfur atom, N=0-2, R8 is H or alkyl, B is a single bond or optionally oxygen-substituted divalent organic group, a=0-3, b=1-3, and X is an acid labile group. The polymer generates a strong sulfonic acid which provides for effective cleavage of acid labile groups in a chemically amplified resist composition.
摘要翻译： 提供了包含具有式（1），（2）和（3）的重复单元的聚合物以及包含其的化学放大抗蚀剂组合物。 R 1是H，F，CH 3或CF 3，R f是H，F，CF 3或C 2 F 5，A是任选氟或氧取代的二价有机基团，R 2，R 3和R 4是烷基，烯基，氧代烷基，芳基，芳烷基或芳氧基烷基 或者可以与硫原子形成环，N = O-2，R 8是H或烷基，B是单键或任选的氧取代的二价有机基团，a = 0-3，b = 1-3，和 X是酸不稳定组。 该聚合物产生强的磺酸，其提供化学增强抗蚀剂组合物中酸不稳定基团的有效切割。
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公开(公告)号：US20070111140A1
公开(公告)日：2007-05-17
申请号：US11580962
申请日：2006-10-16
IPC分类号： G03C1/00
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/111 , Y10S430/114 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： There is disclosed a resist composition which shows high sensitivity and high resolution on exposure to high energy beam, provides reduced Line Edge Roughness because swelling at the time of development is reduced, provides minor amounts of residue after development, has excellent dry etching resistance, and can also be used suitably for the liquid immersion lithography; and a patterning process using the resist composition. There can be provided a resist composition which comprises, at least, a polymer including repeating units represented by the following general formulae (a) and (b).
摘要翻译： 公开了一种抗蚀剂组合物，其在高能量束暴露时显示出高灵敏度和高分辨率，由于在显影时的膨胀减小，提供降低的线边缘粗糙度，在显影后提供少量残留物，具有优异的耐干蚀刻性，以及 也可以适用于液浸光刻; 以及使用抗蚀剂组合物的图案化工艺。 可以提供一种抗蚀剂组合物，其至少包含由以下通式（a）和（b）表示的重复单元的聚合物。
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公开(公告)号：US20060147836A1
公开(公告)日：2006-07-06
申请号：US11305118
申请日：2005-12-19
IPC分类号： G03C1/76
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： There is disclosed a resist composition which comprises, at least, a polymer in which a sulfonium salt having a polymerizable unsaturated bond, a (meth)acrylate having a lactone or a hydroxyl group as an adhesion group, and a (meth)acrylate having an ester substituted with an acid labile group are copolymerized. There can be provided a resist composition with high resolution which has high sensitivity and high resolution to high energy beam, especially to ArF excimer laser, F2 excimer laser, EUV, X-ray, EB, etc., has reduced line edge roughness, and comprises a polymeric acid generator which has insolubility in water, and sufficient thermal stability and preservation stability.
摘要翻译： 公开了一种抗蚀剂组合物，其至少包含其中具有可聚合不饱和键的锍盐，具有内酯或羟基的（甲基）丙烯酸酯作为粘合基团的聚合物和（甲基）丙烯酸酯具有 由酸不稳定基团取代的酯被共聚。 可以提供具有高分辨率的抗蚀剂组合物，其对高能量束具有高灵敏度和高分辨率，特别是对于ArF准分子激光器，F 2/2准分子激光器，EUV，X射线，EB等。 降低了线边缘粗糙度，并且包括在水中具有不溶性，并具有足够的热稳定性和保存稳定性的聚合酸产生剂。
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9.发明授权Sulfonium salt-containing polymer, resist composition, and patterning process 有权含锍盐的聚合物，抗蚀剂组合物和图案化工艺公开(公告)号：US08039198B2
公开(公告)日：2011-10-18
申请号：US12404245
申请日：2009-03-13
CPC分类号： G03F7/0045 , G03F7/0392 , G03F7/0397 , G03F7/2041 , Y10S430/111
摘要： A polymer comprising recurring units of a sulfonium salt represented by formula (1) is provided as well as a chemically amplified resist composition comprising the same. R1 is H, F, methyl or trifluoromethyl, R2 to R4 are C1-C10 alkyl or alkoxy, R5 is C1-C30 alkyl or C6-C14 aryl, k, m and n are 0 to 3. The recurring units generate a sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition. The resist composition exhibits excellent resolution and a pattern finish with minimal LER.
摘要翻译： 提供了包含由式（1）表示的锍盐的重复单元的聚合物以及包含该聚合物的化学放大抗蚀剂组合物。 R 1是H，F，甲基或三氟甲基，R 2至R 4是C 1 -C 10烷基或烷氧基，R 5是C 1 -C 30烷基或C 6 -C 14芳基，k，m和n是0至3.重复单元产生磺酸 暴露于高能量辐射下，以促进抗蚀剂组合物中酸不稳定基团的有效断裂。 抗蚀剂组合物以最小的LER显示出优异的分辨率和图案光洁度。
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公开(公告)号：US07629106B2
公开(公告)日：2009-12-08
申请号：US11580962
申请日：2006-10-16
IPC分类号： G03F7/039
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/111 , Y10S430/114 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： There is disclosed a resist composition which shows high sensitivity and high resolution on exposure to high energy beam, provides reduced Line Edge Roughness because swelling at the time of development is reduced, provides minor amounts of residue after development, has excellent dry etching resistance, and can also be used suitably for the liquid immersion lithography; and a patterning process using the resist composition. There can be provided a resist composition which comprises, at least, a polymer including repeating units represented by the following general formulae (a) and (b).
摘要翻译： 公开了一种抗蚀剂组合物，其在高能量束暴露时显示出高灵敏度和高分辨率，由于在显影时的膨胀减小，提供降低的线边缘粗糙度，在显影后提供少量残留物，具有优异的耐干蚀刻性，以及 也可以适用于液浸光刻; 以及使用抗蚀剂组合物的图案化工艺。 可以提供一种抗蚀剂组合物，其至少包含由以下通式（a）和（b）表示的重复单元的聚合物。
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