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公开(公告)号：US09451246B2
公开(公告)日：2016-09-20
申请号：US13545768
申请日：2012-07-10
申请人： Jun Koyama , Hiroyuki Miyake , Hideaki Shishido , Seiko Inoue , Kouhei Toyotaka , Koji Kusunoki , Hikaru Harada , Makoto Kaneyasu
发明人： Jun Koyama , Hiroyuki Miyake , Hideaki Shishido , Seiko Inoue , Kouhei Toyotaka , Koji Kusunoki , Hikaru Harada , Makoto Kaneyasu
CPC分类号： H04N13/376 , H04N13/315 , H04N13/324 , H04N13/356 , H04N13/373
摘要： A display device includes a display panel including a plurality of pixels, a shutter panel including a driver circuit, a liquid crystal, and light-transmitting electrodes provided in a striped manner, and a positional data detector configured to detect a positional data of a viewer. The shutter panel is provided over a display surface side of the display panel, a width of one of the light-transmitting electrodes in the shutter panel is smaller than that of one of the plurality of pixels, and the driver circuit in the shutter panel is configured to selectively output signals for forming a parallax barrier to the light-transmitting electrodes. The parallax barrier is capable of changing its shape in accordance with the detected positional data.
摘要翻译： 一种显示装置，包括：包括多个像素的显示面板;包括驱动电路的快门面板;液晶;以条纹方式设置的透光电极;以及位置数据检测器，被配置为检测观察者的位置数据 。 快门面板设置在显示面板的显示面侧，快门面板中的一个透光电极的宽度小于多个像素中的一个透光电极的宽度，而快门面板中的驱动电路为 被配置为选择性地输出用于形成对透光电极的视差屏障的信号。 视差屏障能够根据检测到的位置数据改变其形状。
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公开(公告)号：US08928708B2
公开(公告)日：2015-01-06
申请号：US13545734
申请日：2012-07-10
申请人： Jun Koyama , Hiroyuki Miyake , Kouhei Toyotaka , Hikaru Harada , Makoto Kaneyasu
发明人： Jun Koyama , Hiroyuki Miyake , Kouhei Toyotaka , Hikaru Harada , Makoto Kaneyasu
CPC分类号： G09G3/003 , G09G2300/023 , G09G2320/0209 , H04N13/31
摘要： An object is to suppress crosstalk. A display device includes a pixel portion which includes a first display region, a second display region, and a non-light-emitting region provided between the first display region and the second display region; and a parallax barrier which includes a first light control region, a second light control region, and a light-transmitting region provided between the first light control region and the second light control region. The first light control region overlaps with the first display region, the second light control region overlaps with the second display region, and the center of the width of the light-transmitting region overlaps with the non-light-emitting region.
摘要翻译： 目的是抑制串扰。 显示装置包括：像素部，其包括第一显示区域，第二显示区域和设置在第一显示区域和第二显示区域之间的非发光区域; 以及包括第一光控制区域，第二光控制区域和设置在第一光控制区域和第二光控制区域之间的光透射区域的视差屏障。 第一光控制区域与第一显示区域重叠，第二光控制区域与第二显示区域重叠，并且透光区域的宽度的中心与非发光区域重叠。
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公开(公告)号：US08421068B2
公开(公告)日：2013-04-16
申请号：US12904565
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/10 , H01L29/12 , H01L29/04 , H01L31/00 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L29/26 , G06K19/07758 , G11C7/00 , G11C19/28 , H01L21/8236 , H01L23/66 , H01L27/0883 , H01L27/1225 , H01L29/24 , H01L29/66969 , H01L29/78609 , H01L29/7869 , H01L29/78696 , H01L2223/6677 , H02M3/07
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.
摘要翻译： 目的是减少用于LSI，CPU或存储器的晶体管的漏电流和寄生电容。 使用薄膜晶体管制造诸如LSI，CPU或存储器的半导体集成电路，其中使用氧化物半导体形成沟道形成区域，该氧化物半导体通过去除作为电子给体的杂质而成为本征或本质上的半导体 （供体），并且具有比硅半导体更大的能隙。 通过使用具有充分降低的氢浓度的高度净化的氧化物半导体层的薄膜晶体管，可以实现由于漏电流而具有低功耗的半导体器件。
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公开(公告)号：US08421069B2
公开(公告)日：2013-04-16
申请号：US12904579
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/10 , H01L29/12 , H01L29/04 , H01L31/00 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L29/7869 , H01L21/84 , H01L23/552 , H01L23/60 , H01L23/66 , H01L25/16 , H01L27/0222 , H01L27/10873 , H01L27/12 , H01L27/1225 , H01L28/20 , H01L28/60 , H01L29/78609 , H01L2223/6677 , H01L2924/0002 , H01L2924/00
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized.
摘要翻译： 目的是减少用于LSI，CPU或存储器的晶体管的漏电流和寄生电容。 包括在LSI，CPU或存储器中的半导体集成电路使用使用氧化物半导体形成的晶体管来制造，所述氧化物半导体是通过从作为电子给体（供体）中除去作为电子给体（供体）的杂质而获得的内在或本质上的半导体 氧化物半导体，并且具有比硅半导体更大的能隙，并且形成在半导体衬底上。 通过形成在半导体衬底上的晶体管，并且包括具有充分降低的氢浓度的高度净化的氧化物半导体层，可以实现其由漏电流引起的功率消耗低的半导体器件。
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公开(公告)号：US09336739B2
公开(公告)日：2016-05-10
申请号：US13167020
申请日：2011-06-23
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kouhei Toyotaka
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kouhei Toyotaka
IPC分类号： G09G3/36 , G02F1/133 , G02F1/1335 , G09G3/34
CPC分类号： G09G3/3688 , G02F1/13318 , G02F1/133514 , G02F2001/133622 , G09G3/3413 , G09G3/3677 , G09G2310/0235
摘要： An object is to provide a liquid crystal display device capable of image display according to an environment around the liquid crystal display device, e.g., in a bright environment or a dim environment. Another object is to provide a liquid crystal display device capable of displaying an image in both modes of a reflective mode in which external light is used as a light source and a transmissive mode in which a backlight is used. In order to achieve at least one of the above objects, a liquid crystal display device is provided with a region (a reflective region) where display is performed with reflection of incident light through a liquid crystal layer and a region (a transmissive region) where display is performed with transmission of light from a backlight and can switch the transmissive mode and the reflective mode. In the case where a full-color image is displayed, a pixel portion includes at least a first region and a second region, a plurality of lights of different hues are sequentially supplied to the first region according to a first order, and a plurality of lights of different hues are also sequentially supplied to the second region according to a second order which is different from the first order.
摘要翻译： 目的在于提供一种液晶显示装置，能够根据液晶显示装置周围的环境进行图像显示，例如在明亮的环境或暗淡的环境中。 另一个目的是提供一种能够以使用外部光作为光源的反射模式和使用背光的透射模式的两种模式来显示图像的液晶显示装置。 为了实现上述目的中的至少一个目的，液晶显示装置设置有通过入射光反射通过液晶层和区域（透射区域）进行显示的区域（反射区域），其中 通过来自背光的光的透射进行显示，并且可以切换透射模式和反射模式。 在显示全色图像的情况下，像素部分至少包括第一区域和第二区域，根据第一顺序将多个不同色调的光顺序地提供给第一区域，并且多个 根据与第一级不同的二次顺序将不同色调的光顺序地提供给第二区域。
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公开(公告)号：US20110101331A1
公开(公告)日：2011-05-05
申请号：US12904579
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/78
CPC分类号： H01L29/7869 , H01L21/84 , H01L23/552 , H01L23/60 , H01L23/66 , H01L25/16 , H01L27/0222 , H01L27/10873 , H01L27/12 , H01L27/1225 , H01L28/20 , H01L28/60 , H01L29/78609 , H01L2223/6677 , H01L2924/0002 , H01L2924/00
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized.
摘要翻译： 目的是减少用于LSI，CPU或存储器的晶体管的泄漏电流和寄生电容。 包括在LSI，CPU或存储器中的半导体集成电路使用使用氧化物半导体形成的晶体管来制造，所述氧化物半导体是通过从作为电子给体（供体）中除去作为电子给体（供体）的杂质而获得的内在或本质上的半导体 氧化物半导体，并且具有比硅半导体更大的能隙，并且形成在半导体衬底上。 通过形成在半导体衬底上的晶体管，并且包括具有充分降低的氢浓度的高度净化的氧化物半导体层，可以实现其由漏电流引起的功率消耗低的半导体器件。
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公开(公告)号：US20110089414A1
公开(公告)日：2011-04-21
申请号：US12904565
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/12
CPC分类号： H01L29/26 , G06K19/07758 , G11C7/00 , G11C19/28 , H01L21/8236 , H01L23/66 , H01L27/0883 , H01L27/1225 , H01L29/24 , H01L29/66969 , H01L29/78609 , H01L29/7869 , H01L29/78696 , H01L2223/6677 , H02M3/07
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.
摘要翻译： 目的是减少用于LSI，CPU或存储器的晶体管的泄漏电流和寄生电容。 使用薄膜晶体管制造诸如LSI，CPU或存储器的半导体集成电路，其中使用氧化物半导体形成沟道形成区域，该氧化物半导体通过去除作为电子给体的杂质而成为本征或本质上的半导体 （供体），并且具有比硅半导体更大的能隙。 通过使用具有充分降低的氢浓度的高度净化的氧化物半导体层的薄膜晶体管，可以实现由于漏电流而具有低功耗的半导体器件。
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公开(公告)号：US09293104B2
公开(公告)日：2016-03-22
申请号：US13167023
申请日：2011-06-23
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kouhei Toyotaka
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kouhei Toyotaka
CPC分类号： G09G3/3677 , G09G3/3413 , G09G3/3688 , G09G2310/0235
摘要： The liquid crystal display device includes a pixel portion including first and second regions and light sources. The first and second regions each include a liquid crystal element whose transmissivity is controlled in accordance with a voltage of an image signal and a transistor for controlling holding of the voltage, whose off-state current is extremely low. The light sources perform first and second drivings: lights whose hues are different from each other are sequentially supplied to the first region in a first rotating order and the lights are sequentially supplied to the second region in a second rotating order which is different from the first rotating order in the first driving; and a light having a single hue is supplied consecutively to one or both of the first and second regions in the second driving. The period for holding the voltage is different between the first and second drivings.
摘要翻译： 液晶显示装置包括包括第一和第二区域和光源的像素部分。 第一和第二区域各自包括根据图像信号的电压来控制透射率的液晶元件和用于控制截止电流极低的电压的保持的晶体管。 光源执行第一和第二驱动：其色调彼此不同的灯以第一旋转顺序被顺序提供给第一区域，并且以与第一和第二驱动器不同的第二旋转顺序顺序地将光提供给第二区域 在第一次驾驶时旋转顺序; 并且具有单个色调的光被连续地提供给第二驱动中的第一和第二区域中的一个或两个。 用于保持电压的时段在第一和第二驱动之间是不同的。
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公开(公告)号：US09224339B2
公开(公告)日：2015-12-29
申请号：US13167019
申请日：2011-06-23
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kouhei Toyotaka
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kouhei Toyotaka
CPC分类号： G09G3/3406 , G09G3/2025 , G09G3/3413 , G09G3/3607 , G09G3/3659 , G09G2300/0456 , G09G2330/021
摘要： A liquid crystal display device comprising a backlight and a pixel portion including first to 2n-th scan lines, wherein, in a first case of expressing a color image, first pixels controlled by the first to n-th scan lines are configured to express a first image using at least one of first to third hues supplied in a first rotating order, and second pixels controlled by the (n+1)-th to 2n-th scan lines are configured to express a second image using at least one of the first to third hues supplied in a second rotating order, wherein, in a second case of expressing a monochrome image, the first and second pixels controlled by the first to 2n-th scan lines are configured to express the monochrome image by external light reflected by the reflective pixel electrode, and wherein the first rotating order is different from the second rotating order.
摘要翻译： 一种液晶显示装置，包括背光源和包括第一至第2n扫描线的像素部分，其中，在表示彩色图像的第一种情况下，由第一至第n扫描线控制的第一像素被配置为表示 使用以第一旋转顺序提供的第一至第三色调中的至少一个色调的第一图像，以及由第（n + 1）至第2n扫描线控制的第二像素，被配置为使用至少一个 第一至第三色调以第二旋转顺序提供，其中，在表示单色图像的第二种情况下，由第一至第2n扫描线控制的第一和第二像素被配置为通过由 所述反射像素电极，并且其中所述第一旋转顺序与所述第二旋转顺序不同。
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公开(公告)号：US20120287025A1
公开(公告)日：2012-11-15
申请号：US13465238
申请日：2012-05-07
申请人： Seiko Inoue , Hiroyuki Miyake , Jun Koyama
发明人： Seiko Inoue , Hiroyuki Miyake , Jun Koyama
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G2300/0861
摘要： In a circuit in FIG. 1, pluses are input to a first gate signal line and a second gate signal line in accordance with a timing chart in FIG. 3, so that transistors in the circuit are turned on/off. As a result, a potential difference between a third node and a second node does not depend on the threshold voltage of a fourth transistor and is determined only by a potential of a data line and a potential of a second wiring. Therefore, an intended current can flow in a display element.
摘要翻译： 在图1的电路中 如图1所示，根据图1中的时序图，对第一栅极信号线和第二栅极信号线进行输入。 3，使得电路中的晶体管导通/截止。 结果，第三节点和第二节点之间的电位差不依赖于第四晶体管的阈值电压，并且仅由数据线的电位和第二布线的电位决定。 因此，预期的电流可以流过显示元件。
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