摘要:
The surface area occupied by a digital type signal line driver circuit in an image display device is large, and this is an impediment to reducing the size of the display device. A memory circuit within a signal line driver circuit is made common among n signal lines (where n is a natural number greater than or equal to 2). One horizontal scan period is divided into n divisions, and all signal lines can be driven by performing processing with respect to signal lines differing by memory circuit and D/A converter circuit, respectively, during the period of each division. It thus becomes possible to make 1/n as many memory circuits and D/A conversion circuits within the signal line driver circuit as in a conventional example.
摘要:
A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
摘要:
A D/A conversion circuit with a small area is provided. In the D/A conversion circuit, according to a digital signal transmitted from address lines of an address decoder, one of four gradation voltage lines is selected. A circuit including two N-channel TFTs is connected in series to a circuit including two P-channel TFT, and a circuit including the circuits connected in series to each other is connected in parallel to each of the gradation voltage lines. Further, an arrangement of the circuit including the two N-channel TFTs and the circuit including the two P-channel TFTs is reversed for every gradation voltage line. By this, the crossings of wiring lines in the D/A conversion circuit becomes small and the area can be made small.
摘要:
A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
摘要:
To provide a display device capable of displaying a good quality image. According to the present invention, there is provided a display device comprising: a display panel composed of a pixel portion in which a plurality of TFTs are arranged in matrix, a source driver, and a gate driver; an image signal processing circuit for processing an image signal input from an external; and a control circuit for controlling the display panel and the image signal processing circuit, characterized in that the image signal processing circuit corrects the image signal on the basis of a correction table and feeds the display panel with the corrected image signal.
摘要:
A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
摘要:
A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
摘要:
There is provided an image display device operating in response to the input of digital picture signals, in which the occupied area of a signal line driver circuit thereof is reduced, and the parasitic capacitance and resistance of input transmission lines of the digital picture signals are reduced. The device includes both a unit for directly inputting the digital picture signals to shift registers and for performing series parallel conversion, and a unit for causing n (n is a natural number not less than 2) signal lines to jointly own storage circuits and D/A converter circuits in the signal line driver circuit. One horizontal scan period is divided into n periods, and the storage circuits and the D/A converter circuits perform a processing to signal lines different in each of the divided periods.
摘要:
A D/A conversion circuit with a small area is provided. In the D/A conversion circuit, according to a digital signal transmitted from address lines of an address decoder, one of four gradation voltage lines is selected. A circuit including two N-channel TFTs is connected in series to a circuit including two P-channel TFT, and a circuit including the circuits connected in series to each other is connected in parallel to each of the gradation voltage lines. Further, an arrangement of the circuit including the two N-channel TFTs and the circuit including the two P-channel TFTs is reversed for every gradation voltage line. By this, the crossings of wiring lines in the D/A conversion circuit becomes small and the area can be made small.
摘要:
In a driving circuit of a digital gradation system semiconductor display device, one D/A conversion circuit 208 is provided for a plurality of source signal lines, and the respective source signal lines are driven in a time-division manner. By this, the number of the D/A conversion circuits 208 in the driving circuit can be decreased, and miniaturization of the semiconductor display device can be achieved.