公开(公告)号：US5789762A

公开(公告)日：1998-08-04

申请号：US526935

申请日：1995-09-12

申请人： Jun Koyama ,  Yasuhiko Takemura ,  Masahiko Hayakawa ,  Shunpei Yamazaki ,  Akiharu Miyanaga ,  Hisashi Ohtani

发明人： Jun Koyama ,  Yasuhiko Takemura ,  Masahiko Hayakawa ,  Shunpei Yamazaki ,  Akiharu Miyanaga ,  Hisashi Ohtani

IPC分类号： H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L31/036 ,  H01L29/04

CPC分类号： H01L27/1214

摘要： It is intended to provide a semiconductor circuit including thin-film transistors (TFTs) having a small leak current and TFTs capable of operating at high speed, and a method for manufacturing such a circuit. A material containing a catalyst element is selectively formed so as to be in close contact with an amorphous silicon film, or a catalyst element is selectively introduced into an amorphous silicon film. The amorphous silicon film thus processed is crystallized by illumination with laser light or strong light equivalent to it. A crystalline silicon area with a small amount of catalyst element is used for TFTs in a pixel circuit and a crystalline silicon area with a large amount of catalyst element is used for TFTs in peripheral circuits of an active matrix circuit.

摘要翻译： 旨在提供一种具有漏电流小的薄膜晶体管（TFT）和能够高速工作的TFT的半导体电路及其制造方法。 选择性地形成含有催化剂元素的材料以与非晶硅膜紧密接触，或者将催化剂元素选择性地引入到非晶硅膜中。 这样处理的非晶硅膜通过照射激光或相当于其的强光而结晶。 具有少量催化剂元素的晶体硅区域用于像素电路中的TFT，并且具有大量催化剂元素的晶体硅区域用于有源矩阵电路的外围电路中的TFT。

公开(公告)号：US06693300B2

公开(公告)日：2004-02-17

申请号：US10227407

申请日：2002-08-26

申请人： Hisashi Ohtani ,  Shunpei Yamazaki ,  Jun Koyama ,  Yasushi Ogata ,  Akiharu Miyanaga

发明人： Hisashi Ohtani ,  Shunpei Yamazaki ,  Jun Koyama ,  Yasushi Ogata ,  Akiharu Miyanaga

IPC分类号： H01L2976

CPC分类号： H01L29/045 ,  G02F1/13454 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78678 ,  Y10S148/122

摘要： A semiconductor thin film having extremely superior crystallinity and a semiconductor device using the semiconductor thin film having high performance are provided. The semiconductor thin film is manufactured in such a manner that after an amorphous semiconductor thin film is crystallized by using a catalytic element, a heat treatment is carried out in an atmosphere containing a halogen element to remove the catalytic element. The thus obtained crystalline semiconductor thin film has substantially {110} orientation. The concentration of C, N, and S remaining in the final semiconductor thin film is less than 5×1018 atoms/cm3, and the concentration of O is less than 1.5×1019 atoms/cm3.

摘要翻译： 提供了具有非常优异的结晶度的半导体薄膜和使用具有高性能的半导体薄膜的半导体器件。 制造半导体薄膜，使得在通过使用催化剂元素使无定形半导体薄膜结晶之后，在含有卤素元素的气氛中进行热处理以除去催化元素。 由此获得的晶体半导体薄膜基本上具有{110}取向。 残留在最终半导体薄膜中的C，N和S的浓度小于5×10 18原子/ cm 3，O的浓度小于1.5×10 19原子/ cm 3。

公开(公告)号：US06452211B1

公开(公告)日：2002-09-17

申请号：US09095027

申请日：1998-06-09

申请人： Hisashi Ohtani ,  Shunpei Yamazaki ,  Jun Koyama ,  Yasushi Ogata ,  Akiharu Miyanaga

发明人： Hisashi Ohtani ,  Shunpei Yamazaki ,  Jun Koyama ,  Yasushi Ogata ,  Akiharu Miyanaga

IPC分类号： H01L2904

CPC分类号： H01L29/045 ,  G02F1/13454 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78678 ,  Y10S148/122

摘要： A semiconductor thin film having extremely superior crystallinity and a semiconductor device using the semiconductor thin film having high performance are provided. The semiconductor thin film is manufactured in such a manner that after an amorphous semiconductor thin film is crystallized by using a catalytic element, a heat treatment is carried out in an atmosphere containing a halogen element to remove the catalytic element. The thus obtained crystalline semiconductor thin film has substantially {110} orientation. The concentration of C, N, and S remaining in the final semiconductor thin film is less than 5×1018 atoms/cm3, and the concentration of O is less than 1.5×1019 atoms/cm3.

摘要翻译： 提供了具有非常优异的结晶度的半导体薄膜和使用具有高性能的半导体薄膜的半导体器件。 制造半导体薄膜，使得在通过使用催化剂元素使无定形半导体薄膜结晶之后，在含有卤素元素的气氛中进行热处理以除去催化元素。 由此获得的晶体半导体薄膜基本上具有{110}取向。 残留在最终半导体薄膜中的C，N和S的浓度小于5×1018原子/ cm3，O的浓度小于1.5×1019原子/ cm3。

公开(公告)号：US06307214B1

公开(公告)日：2001-10-23

申请号：US09084738

申请日：1998-05-27

申请人： Hisashi Ohtani ,  Shunpei Yamazaki ,  Jun Koyama ,  Yasushi Ogata ,  Akiharu Miyanaga

发明人： Hisashi Ohtani ,  Shunpei Yamazaki ,  Jun Koyama ,  Yasushi Ogata ,  Akiharu Miyanaga

IPC分类号： H01L2904

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675 ,  Y10S438/973

摘要： After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film has features that it exhibits {110} orientation and that almost all crystal lattices have continuity at a crystal boundary. This type of grain boundaries greatly contribute to improving the carrier mobility, and make it possible to realize semiconductor devices having very high performance.

摘要翻译： 在通过利用催化剂元素使无定形半导体薄膜结晶之后，通过在含有卤素元素的气氛中进行热处理来除去催化剂元素。 所得到的晶体半导体薄膜具有其显示{110}取向的特征，并且几乎所有晶格在晶体边界处具有连续性。 这种晶界极大地有助于提高载流子迁移率，并且可以实现具有非常高性能的半导体器件。

公开(公告)号：US06624051B1

公开(公告)日：2003-09-23

申请号：US09645329

申请日：2000-08-25

申请人： Hisashi Ohtani ,  Shunpei Yamazaki ,  Jun Koyama ,  Yasushi Ogata ,  Akiharu Miyanaga

发明人： Hisashi Ohtani ,  Shunpei Yamazaki ,  Jun Koyama ,  Yasushi Ogata ,  Akiharu Miyanaga

IPC分类号： H01L2136

CPC分类号： H01L21/02672 ,  H01L21/02609 ,  H01L21/02675 ,  H01L21/2022 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1277 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78684 ,  Y10S438/958

摘要： After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film has features that it exhibits {111} orientation and that almost all crystal lattices have continuity at a crystal boundary. This type of grain boundaries greatly contribute to improving the carrier mobility, and make it possible to realize, semiconductor devices having very high performance.

摘要翻译： 在通过利用催化剂元素使无定形半导体薄膜结晶之后，通过在含有卤素元素的气氛中进行热处理来除去催化剂元素。 所得到的晶体半导体薄膜具有其显示{111}取向的特征，并且几乎所有晶格在晶体边界处具有连续性。 这种晶界极大地有助于提高载流子迁移率，并且可以实现具有非常高性能的半导体器件。

公开(公告)号：US07427780B2

公开(公告)日：2008-09-23

申请号：US10712062

申请日：2003-11-14

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

IPC分类号： H01L27/14

CPC分类号： H01L21/02672 ,  H01L21/02686 ,  H01L21/2022 ,  H01L21/28158 ,  H01L21/3221 ,  H01L21/3226 ,  H01L27/1203 ,  H01L27/1229 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： There is disclosed a method of fabricating a thin-film transistor having excellent characteristics. Nickel element is held in contact with selected regions of an amorphous silicon film. Then, thermal processing is performed to crystallize the amorphous film. Subsequently, thermal processing is carried out in an oxidizing ambient containing a halogen element to form a thermal oxide film. At this time, the crystallinity is improved. Also, gettering of the nickel element proceeds. This crystalline silicon film consists of crystals grown radially from a number of points. Consequently, the thin-film transistor having excellent characteristics can be obtained.

摘要翻译： 公开了一种制造具有优异特性的薄膜晶体管的方法。 镍元素与非晶硅膜的选定区域保持接触。 然后，进行热处理以使非晶膜结晶。 随后，在包含卤素元素的氧化环境中进行热处理以形成热氧化膜。 此时，结晶度提高。 此外，镍元素的吸收进行。 该晶体硅膜由从多个点径向生长的晶体组成。 因此，可以获得具有优异特性的薄膜晶体管。

公开(公告)号：US06744069B1

公开(公告)日：2004-06-01

申请号：US08785488

申请日：1997-01-17

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

IPC分类号： H01L2904

CPC分类号： H01L29/66757 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L21/28158 ,  H01L21/3221 ,  H01L21/3226 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed by performing a heat treatment in an oxidizing atmosphere containing a halogen element. During this step, the crystallinity is improved and the gettering of nickel elements proceeds. A thin-film transistor is formed so that the direction connecting source and drain regions coincides with the above crystal growth direction. As a result, a TFT having superior characteristics such as a mobility larger than 200 cm2/Vs and an S value smaller than 100 mV/dec. can be obtained.

摘要翻译： 镍选择性地保持与非晶硅膜的特定区域接触。 通过进行热处理来实现与基板平行的晶体生长。 通过在含有卤素元素的氧化气氛中进行热处理而形成热氧化膜。 在此步骤中，结晶度得到改善，并且镍元素的吸除进行。 形成薄膜晶体管，使得连接源极和漏极区域的方向与上述晶体生长方向一致。 结果，具有诸如迁移率大于200cm 2 / Vs和S值小于100mV / dec的优异特性的TFT。 可以获得。

公开(公告)号：US06504174B1

公开(公告)日：2003-01-07

申请号：US09536801

申请日：2000-03-28

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

IPC分类号： H01L31036

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/28158 ,  H01L21/3221 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1203 ,  H01L27/1277 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： A novel and very useful method for forming a crystal silicon film by introducing a metal element which promotes crystallization of silicon to an amorphous silicon film and for eliminating or reducing the metal element existing within the crystal silicon film thus obtained is provided. The method for fabricating a semiconductor device comprises steps of intentionally introducing the metal element which promotes crystallization of silicon to the amorphous silicon film and crystallizing the amorphous silicon film by a first heat treatment to obtain the crystal silicon film; eliminating or reducing the metal element existing within the crystal silicon film by implementing a second heat treatment within an oxidizing atmosphere; eliminating a thermal oxide film formed in the previous step; and forming another thermal oxide film on the surface of the region from which the thermal oxide film has been eliminated by implementing another thermal oxidation.

公开(公告)号：US06478263B1

公开(公告)日：2002-11-12

申请号：US09428471

申请日：1999-10-28

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

IPC分类号： H01L2904

CPC分类号： H01L21/02672 ,  H01L21/2022 ,  H01L21/28158 ,  H01L21/3221 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed on the silicon film by performing a heat treatment in an oxidizing atmosphere containing a halogen element. During this step, in the silicon film, impurities included such as oxygen or chlorine, are segregated with extending along the crystal growth, the crystallinity is improved, and the gettering of nickel element proceeds. A thin-film transistor is formed so that the direction connecting source and drain regions coincides with the above crystal growth direction. As a result, a TFT having superior characteristics such as a mobility larger than 200 cm2/Vs and an S value smaller than 100 mV/dec. can be obtained.

摘要翻译： 镍选择性地保持与非晶硅膜的特定区域接触。 通过进行热处理来实现与基板平行的晶体生长。 通过在含有卤素元素的氧化气氛中进行热处理，在硅膜上形成热氧化膜。 在该步骤中，在硅膜中，包含的杂质如氧或氯的杂质沿着晶体生长延伸而分离，结晶度提高，并且镍元素的吸杂进行。 形成薄膜晶体管，使得连接源极和漏极区域的方向与上述晶体生长方向一致。 结果，具有诸如迁移率大于200cm2 / Vs和S值小于100mV / dec的优异特性的TFT。 可以获得。

公开(公告)号：US07679087B2

公开(公告)日：2010-03-16

申请号：US10214691

申请日：2002-08-09

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

IPC分类号： H01L29/04 ,  H01L31/0392

CPC分类号： H01L21/02672 ,  H01L21/02686 ,  H01L21/2022 ,  H01L21/28158 ,  H01L21/3221 ,  H01L21/3226 ,  H01L27/1203 ,  H01L27/1229 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： There is disclosed a method of fabricating a thin-film transistor having excellent characteristics. Nickel element is held in contact with selected regions of an amorphous silicon film. Then, thermal processing is performed to crystallize the amorphous film. Subsequently, thermal processing is carried out in an oxidizing ambient containing a halogen element to form a thermal oxide film. At this time, the crystallinity is improved. Also, gettering of the nickel element proceeds. This crystalline silicon film consists of crystals grown radially from a number of points. Consequently, the thin-film transistor having excellent characteristics can be obtained.

摘要翻译： 公开了一种制造具有优异特性的薄膜晶体管的方法。 镍元素与非晶硅膜的选定区域保持接触。 然后，进行热处理以使非晶膜结晶。 随后，在包含卤素元素的氧化环境中进行热处理以形成热氧化膜。 此时，结晶度提高。 此外，镍元素的吸收进行。 该晶体硅膜由从多个点径向生长的晶体组成。 因此，可以获得具有优异特性的薄膜晶体管。